Rational Design of Two-Dimensional Magnetic Chromium Borides Based on First-Principles Calculation

Two-dimensional(2D) magnetic materials have been experimentally recognized recently,however,the Curie temperatures(TC) of known 2D systems are quite low.Generally,magnetic systems can be seen as constituent magnetic elements providing spins and the non-magnetic elements providing frameworks to host the magnetic elements.Short bond lengths between the magnetic and non-magnetic elements would be beneficial for strong magnetic interactions and thus high TC.Based on this,we propose to combine the magnetic element Cr and the non-magnetic element boron to design novel 2D magnetic systems.Using our self-developed software package IM2 ODE,we design a series of chromium-boride based 2D magnetic materials.Nine stable magnetic systems are identified.Among them,we find that CrB4-Ⅰ,CrB4-Ⅱ and CrBs-Ⅰ with common structural units [CrB8] are ferromagnetic metals with estimated TC of 270 K,120 K and 110 K,respectively.On the other hand,five CrB3 phases with structural units [Cr2B12] are antiferromagnetic metals.Additionally,we also find one antiferromagnetic semiconductor CrB2-Ⅰ.Our work may open new directions for identifying 2D magnetic systems with high TC.     

一维微分方程的多项式特解方法（英文）

本文对一维常微分算子及发展微分算子提出一种基于解析多项式特解(MPPS)的求解方法,通过使用这些特解公式,将微分方程的解显式表达为多项式特解的线性组合来求解复杂的微分方程,如可以使用这些公式来求解右端具有不连续驱动项的微分系统.文中给出一系列数值例子,数值模拟结果精度很高,而且误差非常稳定.     

First-principles investigation on ideal strength of B2 NiAl and NiTi alloys

For B2 NiAl and NiTi intermetallic compounds, the ideal stress–strain image is lack from the perspective of elastic constants. We use first-principles calculation to investigate the ideal strength and elastic behavior under the tensile and shear loads. The relation between the ideal strength and elastic constants is found. The uniaxial tension of NiAl and NiTi along <001> crystal direction leads to the change from tetragonal path to orthogonal path, which is driven by the vanishing of the shear constant C(66). The shear failure under {110}{111} shear deformation occurring in process of tension may result in a small ideal tensile strength(~ 2 GPa) for NiTi. The unlikeness in the ideal strength of Ni Al and Ni Ti alloys is discussed based on the charge density difference.     

融合插值点优化的多项式结构宽带波束形成器设计方法*

多项式结构设计方法是主瓣指向可调宽带波束形成器设计的一类重要方法。多项式结构的阶数是有限的,导致主瓣实际指向与期望指向之间存在偏差,因而影响了波束形成器的指向性指数。针对这一问题,该文提出了一种基于插值点优化的多项式结构宽带波束形成器设计方法。首先,引入多项式结构插值点处阵列响应的空间导数约束,以减小主瓣指向偏差;进而利用粒子群优化算法对多项式结构中的插值点进行优化,以充分利用插值点位置提供的自由度进一步提升多项式结构宽带波束形成器的性能。优化设计结果表明,与现有设计方法相比,该文提出的方法不仅降低了主瓣的指向偏差,同时也提高了指向性指数,有效改善了多项式结构宽带波束形成器的性能。     

High throughput N-modular redundancy for error correction design of memristive stateful logic

Memristive stateful logic is one of the most promising candidates to implement an in-memory computing system that computes within the storage unit. It can eliminate the costs for the data movement in the traditional von Neumann system. However, the instability in the memristors is inevitable due to the limitation of the current fabrication technology, which incurs a great challenge for the reliability of the memristive stateful logic. In this paper, the implication of device instability on the reliability of the logic event is simulated. The mathematical relationship between logic reliability and redundancy has been deduced. By combining the mathematical relationship with the vector-matrix multiplication in a memristive crossbar array, the logic error correction scheme with high throughput has been proposed. Moreover, a universal design paradigm has been put forward for complex logic. And the circuit schematic and the flow of the scheme have been raised. Finally, a 1-bit full adder (FA) based on the NOR logic and NOT logic is simulated and the mathematical evaluation is performed. It demonstrates the scheme can improve the reliability of the logic significantly. And compared with other four error corrections, the scheme which can be suitable for all kinds of R-R logics and V-R logics has the best universality and throughput. Compared with the other two approaches which also need additional complementary metal-oxide semiconductor (CMOS) circuits, it needs fewer transistors and cycles for the error correction.     

单细胞与空间转录组分析研究进展

单细胞的异质性在胚胎发育、神经系统发育、癌症病变等生物学过程中具有重要的研究意义。单细胞转录组测序利用测序技术解析细胞内转录本序列,为细胞异质性研究提供可靠、准确的研究手段及观测视野,为揭示生物发育规律、疾病发生发展机制等提供了重要的技术手段。该文围绕单细胞与空间组学分析,综述了近年来发展的各类单细胞转录组测序、单细胞多组学测序及空间转录组分析方法,分析了其优缺点。同时展望了单细胞与空间转录组分析领域的发展趋势,即开发低成本、全方位、高通量、高分辨的单细胞空间多组学分析方法以实现对单个细胞更为细致、全面及准确的描述和精准单细胞图谱构建。     

基于常温无外压的转移印刷技术构筑半球状多级Ag基底

基于自组装技术制备了3种不同粒径的聚苯乙烯微球阵列,并翻制了与微球阵列互补的软模板.基于室温无外压的转移印刷技术制备了聚甲基丙烯酸甲酯半球形微纳阵列,然后基于原位光还原技术在聚甲基丙烯酸甲酯半球表面制备Ag纳米颗粒,构筑了拉曼增强的半球状多级Ag基底.转移印刷技术的关键是利用软模板自身的低表面能和表面羟基化的图案化材料与亲水基底界面间的氢键作用力.     

模糊集合的OP-极限

研究了支撑集为群的模糊集合在反复“自乘”下的极限的存在性和形态问题.给出了模糊集合的OP-极限概念.利用贝壳对和大(小)-瓣,给出了OP-极限存在的充分条件.讨论了一些特殊群上模糊集合的OP-极限,这些OP-极限都具有较好的平层形态.     

高核Ag/S纳米团簇合成的研究进展

硫醇配体保护的高核银纳米团簇具有丰富的结构和性能, 在光致发光、 生物传感、 纳米材料等方面具有广阔的应用前景. 然而, 精确控制高核Ag/S纳米团簇的尺寸和结构面临着巨大的挑战, 构建高核Ag/S纳米团簇的可行策略也一直是人们关注的焦点. 近年来, 随着合成方法和表征技术的不断发展, 高核Ag/S纳米团簇的合成和性能研究方面均取得了显著的成就. 本文总结了含20个或以上Ag原子的Ag/S纳米团簇的合成方法(直接还原法、 阴离子模板法及配体交换法), 对部分高核Ag/S纳米团簇的结构进行了探讨, 并展望了未来研究的趋势.     

建筑风压数值模拟的几种并行化策略

针对四个处理机的Ｔｒａｎｓｐｕｔｅｒ并行计算机系统，建立了建筑风压数值模拟问题基于ＳＩＭ－ＰＬＥＣ算法的几种并行化策略：分区并行策略、方程并行策略和双重并行策略。对各种策略的计算流程、数据通讯及并行效率等进行了分析和比较，并通过实例计算作了验证。