纳米VO2/ZnO复合薄膜的热致变色特性研究

为提高VO₂薄膜的热致变色性能,采用纳米结构和复合结构二者相结合的方法,通过磁控溅射技术先在玻璃衬底上制备高(002)取向ZnO薄膜,再在ZnO层上室温沉积钒金属薄膜,最后经热氧化处理获得纳米结构VO₂/ZnO复合薄膜.利用变温拉曼光谱观察分析了VO₂/ZnO薄膜相变前后的晶格畸变和键态的演变过程,讨论了薄膜的结构与热致红外开关特性和相变温度的内在关系.结果显示,与相同条件获得的同厚度的单层VO₂薄膜相比,纳米VO关键词： ZnO 2')" href="#">VO₂ 纳米复合薄膜 热致变色 拉曼光谱     

ZnO纳米薄膜及其声表面波传感器的制备与特性研究

结合RF磁控溅射和水热合成法制备ZnO纳米结构薄膜,利用XRD及SEM分析ZnO薄膜的晶体结构和形貌、XPS分析薄膜的化学组分。结果表明,在适当的条件下,所制备的ZnO薄膜为具有良好c轴取向的纳米棒状结构,且ZnO纳米棒薄膜表面吸附的氧原子及晶格的氧空位缺陷增多。利用所制备ZnO纳米棒薄膜的上述特性,将其作为气体敏感材料。分别沉积于128°YX-LiNbO₃和36°YX-LiTaO₃基片,研制多层结构的声表面波(Rayleigh波和Love波)氢气传感器,并进行室温条件下氢气的实时传感检测,结果显示所研制的Love波传感器具有更高的灵敏度,性能更优化。      

掺银氧化锌纳米棒的水热法制备研究

利用水热法在直流磁控溅射制备的掺铝氧化锌 (AZO) 种子层上制备了不同形貌和光学性能的掺银ZnO纳米棒, 并采用XRD、扫描电镜、透射谱、光发射谱和EDS谱详细研究了Ag离子与Zn离子的摩尔百分比 (R_Ag/Zn) 及AZO种子层对掺银ZnO纳米棒的结构和光学性质的影响. 随着R_Ag/Zn的增加, 掺银ZnO 纳米棒的微结构和光学性质的变化与银掺杂诱导的纳米棒的端面尺寸变化有关. 平均端面尺寸的变化归结于种子层颗粒大小和颗粒数密度不同导致掺入的Ag离子的相对比例不同. 溅射15 min的AZO种子层上生长的ZnO纳米棒由于缺陷增多导致在可见光区的发光峰明显强于溅射10 min 的AZO种子层上、相同R_Ag/Zn 条件下生长的ZnO纳米棒. Ag掺杂产生的点缺陷增多导致可见光区PL波包较宽. 纯ZnO纳米棒的微结构与种子层厚度导致的结晶度和颗粒大小有关. 关键词： ZnO纳米棒 水热法 Ag掺杂 直流磁控溅射     

水热反应中籽晶层对ZnO纳米棒的影响

以Zn(NO3)2·6H2O/HMT为反应物,通过低温水热反应过程,在籽晶衬底上制备了ZnO纳米棒,分别用场发射扫描电子显微镜和X射线衍射仪对ZnO纳米棒形貌与晶体结构进行了表征,并研究了不同方法制备的ZnO籽晶层以及籽晶层厚度对ZnO纳米棒形貌及结晶质量的影响.结果表明磁控溅射籽晶衬底上生长的ZnO纳米棒结晶质量最好,而籽晶层的厚度对ZnO纳米棒的垂直取向性有一定的影响.     

基于SSCVD方法的a-b轴取向ZnO薄膜制备

以Zn₄(OH)₂(O₂CCH₃)₆·2H₂O为单一固相有机源,采用单源化学气相沉积法(Single sour cechem icalvapor deposition,SSCVD)在Si(100)衬底上制备ZnO薄膜,用X射线衍射(XRD)、原子力显微镜(AFM)分析ZnO薄膜样品的晶体结构和微观形貌,并用X射线光电子能谱(XPS)对薄膜的锌氧化学计量比进行了分析。研究结果表明:在非平衡条件下所得到的ZnO薄膜沿a-b轴取向生长,基片温度对ZnO薄膜生长过程影响较大,随着基片温度的升高,薄膜呈现c轴生长趋势;晶粒成柱状、尺寸均匀、膜层结构致密;薄膜样品中n_Zn:n_O=0.985。     

花状掺杂W-VO$lt;sub$gt;2$lt;/sub$gt;/ZnO热致变色纳米复合薄膜研究

为解决掺杂引起的二氧化钒薄膜的红外调制幅度下降以及二氧化钒复合薄膜相变温度需要进一步降低等问题, 采用纳米结构、掺杂改性和复合结构等多种机理协同作用的方案, 利用共溅射氧化法, 先在石英玻璃上制备高(002)取向的ZnO薄膜, 再在ZnO层上室温共溅射沉积钒钨金属薄膜, 最后经热氧化处理获得双层钨掺杂W-VO₂/ZnO纳米复合薄膜. 利用X射线衍射、X射线光电子能谱、扫描电镜和变温光谱分析等对薄膜的结构、组分、形貌和光学特性进行了分析. 结果显示, W-VO₂/ZnO 纳米复合薄膜呈花状结构, 取向性提高, 在保持掺杂薄膜相变温度(约39 ℃)和热滞回线宽度(约6 ℃)较低的情况下, 其相变前后的红外透过率差量增加近2倍, 热致变色性能得到协同增强. 关键词： 2')" href="#">VO₂ ZnO W掺杂 热致变色     

Si基铁电Bi3.15Nd0.85Ti3O12多层薄膜的一致取向生长和性能的研究

采用脉冲激光沉积(PLD)技术，利用LSCO/CeO₂/YSZ多异质缓冲层，在Si(100)基 片上成功地制备了c轴一致取向的Bi_3.15Nd_0.85Ti₃O12(BNT)铁电薄膜.利用X射线衍射(XRD)和扫描电镜(SEM)分析测定了薄膜的相结构 、取向和形貌特征，考察了沉积温度和氧分压对BNT薄膜微结构、取向和形貌的影响，确定 了BNT薄膜的最佳沉积条件.对在优化的条件下制备得到的BNT薄膜的C-V曲线测试得到了典型 的蝴蝶形曲线，表明该薄膜具有较好的电极化反转存储特性.最后讨论了BNT薄膜铁电性能与 薄膜取向的相关性. 关键词： 3.15Nd_0.85Ti₃O₁₂')" href="#">Bi_3.15Nd_0.85Ti₃O₁₂ 铁电薄 膜 多层异质结 脉冲激光沉积     

原子层沉积方法制备核-壳型纳米材料研究

采用原子层沉积方法在碳黑纳米颗粒表面分别沉积Al₂O₃, ZnO, TiO₂和Pt, 成功制备出核-壳型纳米材料. 通过高分辨率透射电子显微镜、X射线光电子能谱仪、 能谱仪对材料的表面形貌、晶体结构、薄膜成分进行了表征和分析. 结果表明, 原子层沉积方法是制备核壳型纳米材料的理想方法. 此外, 还分析了采用原子层沉积方法沉积不同材料, 所生长的薄膜材料有单晶、多晶、非晶等多种存在形式的形成原因. 关键词： 原子层沉积 核-壳型纳米材料 碳黑纳米颗粒     

Si(001)基片上反应射频磁控溅射ZnO薄膜的两步生长方法

利用反应射频磁控溅射技术，采用两步生长方法制备了ZnO薄膜，探讨了基片刻蚀时间和低温过渡层沉积时间对ZnO薄膜生长行为的影响.研究结果表明，低温ZnO过渡层的沉积时间所导致的薄膜表面形貌的变化与过渡层在Si(001)表面的覆盖度有关.当低温过渡层尚未完全覆盖基片表面时，ZnO薄膜的表面岛尺度较小、表面粗糙度较大，薄膜应力较大；当低温过渡层完全覆盖Si(001)基片后，ZnO薄膜的表面岛尺度较大、表面粗糙度较小，薄膜应力较小.基片刻蚀时间对薄膜表面形貌的影响与低温过渡层的成核密度有关.随着刻蚀时间的增加，ZnO薄膜的表面粗糙度逐渐下降，表面形貌自仿射结构的关联长度逐渐减小. 关键词： ZnO薄膜 反应射频磁控溅射 两步生长 形貌分析     

磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究

利用原子力显微镜分析了ZnO薄膜在具有本征氧化层的Si(100)和Si(111)基片上的表面形貌 随沉积时间的演化. 通过对薄膜生长形貌的动力学标度表征，研究了射频反应磁控溅射条件 下，ZnO薄膜的成核过程及生长动力学行为. 研究发现，ZnO在基片表面的成核过程可分为初 期成核阶段、低速率成核阶段和二次成核阶段. 对于Si(100)基片，三个成核阶段的生长指 数分别为β₁=1.04，β₂=0.25±0.01，β₃=0.74；对 于Si(11 关键词： ZnO薄膜 磁控溅射 生长动力学 成核机制     

Growth of ZnO nanorods by aqueous solution method with electrodeposited ZnO seed layers

ZnO nanorod arrays on ZnO-coated seed layers were fabricated by aqueous solution method using zinc nitrate and hexamethylenetetramine at low temperature. The seed layers were coated on ITO substrates by electrochemical deposition technique, and their textures were dominated by controlling the deposition parameters, such as deposition potential and electrolyte concentration. The effects of the electrodeposited seed layers and the growing parameters on the structures and properties of ZnO nanorod arrays were primarily discussed. The orientation and morphology of both the seed layer and successive nanorods were analyzed by using X-ray diffraction (XRD), SEM and TEM. The results show that the seed layer deposited at −700 mV has evenly distributed crystallites and (0 0 2) preferred orientation; the density of resultant nanorods is high and ZnO nanorods stand completely perpendicular onto substrates. Meanwhile, the size of nanorods quite also depends on the growth solution, and the higher concentration of growth solution primary leads to a large diameter of the ZnO nanorods.     

Characterisation of ZnO nanorod arrays grown by a low temperature hydrothermal method

In this paper, growth steps of well defined ZnO nanorod arrays deposited on seeded substrates were investigated. To obtain ZnO seed layer on glass substrates, a successive ionic layer adsorption and reaction (SILAR) method was used and then ZnO nanorods were grown on seed layer using a chemical bath deposition (CBD) method. The effects of seed layer and deposition time on morphology, crystallographic structure (e.g. grain size, microstrain and dislocation density) and electrical characteristics of ZnO nanorods were studied. From the SEM micrographs, it could be seen that the ZnO nanorods densely covered the substrate and were nearly perpendicular to the substrate surface. The XRD patterns showed that the ZnO nanorod arrays had a hexagonal wurtzite structure with a preferred orientation along the (002) plane. An increase in deposition time resulted in an increase in the intensity of the preferred orientation and grain size, but a decrease in microstrain and dislocation density. Electrical activation energies of the structures were calculated as 0.15–0.85?eV from current–temperature characteristics. It was concluded that the morphologies of the structures obtained in this study via a simple and fast solution method can provide high surface areas which are important in area-dependent applications, such as solar cells, hydrogen conversion devices, sensors, etc.     

Alignment-controlled hydrothermal growth of well-aligned ZnO nanorod arrays

ZnO nanorod arrays (ZNAs) were prepared via a two-step seeding and solution hydrothermal growth process. Effects of preparing parameters such as seed layer, colloid concentration, substrate and precursor concentration, on the alignment control of ZNAs were systematically investigated. The deviation angle of ZnO nanorods was measured to evaluate the alignment of arrays. Results show that seed layer not only controls the vertical orientation of ZNAs, but also the compactness of ZNAs. Altering colloid concentration and substrate can influence the microstructure of ZnO seed layer and affect the ordered alignment of ZNAs. The precursor concentration has an insignificant effect on the alignment of ZNAs but has great impact on the morphology of ZNAs. Alignment-controlled and well-aligned ZnO nanorods with different diameter and aspect ratio can be obtained by properly controlling the preparing parameters. A growth mechanism was proposed for the growth of ZnO nanorods.     

ZnO nanorod arrays fabrication via chemical bath deposition: Ligand concentration effect study

A new ligand, N,N,N′,N′-tetramethylethylenediamine, has been used to grow ZnO nanorods on silicon substrates via a two steps approach. A preliminary seeding on silicon substrates has been combined with chemical bath deposition using a Zinc acetate–N,N,N′,N′-tetramethylethylenediamine aqueous solution. The used diamino ligand has been selected as Zn²⁺ complexing agent and the related hydrolysis generates the reacting ions (Zn²⁺ and OH⁻) responsible for the ZnO growth. The seed layer has been annealed at low temperature (<200 °C) and the ZnO nanorods have been grown on this ZnO amorphous layer. There is experimental evidence that the ligand concentration (ranging from 5 to 50 mM) strongly affects the alignment of ZnO nanorods on the substrate, their lateral dimension and the related surface density. Length and diameter of ZnO nanorods increase upon increasing the ligand concentration, while the nanorod density decreases. Even more important, it has been demonstrated, as proof of concept, that chemical bath deposition can be usefully combined with colloidal lithography for selective ZnO nanorod deposition. Thus, by patterning the ZnO seeded substrate with polystyrene microsphere colloidal lithography, regular Si hole arrays, spatially defined by hexagonal ZnO nanorods, have been successfully obtained.     

Study of Zinc Oxide nano/micro rods grown on ITO and glass substrates

Highly oriented multilinked ZnO nano and micro rods were deposited using aqueous solution growth technique on ITO and glass substrates. Their study provides a basic understanding of effect of the base material on the growth of nanorods. An equimolar aqueous solution of Zinc nitrate and hexamine (HMT) was used for the preparation of ZnO nanorods arrays. ZnO was deposited on ITO and glass substrates after establishing the optimal pH and concentration, which yield the best substrate coverage for precursor solution. To achieve uniform growth and high density of ZnO nanorods, the prepared solution was heated at certain constant temperature. The experimental results have been obtained by using Scanning Electron Microscope (SEM), X-ray diffractometer (XRD) and Fluorescence Spectroscope which shows highly oriented nanorods perpendicular to the surface of substrates and a comparative study of ITO and glass grown nanorod arrays shows that the structural chemistry of the substrate clearly affects the growth nanostructures. The high variation in optical properties can be attributed by the heating temperatures and limited presence of reactants available for the controlled growth on substrates. It is also observed confined and decreased particle size with enhanced nucleation on ITO substrate as compared to glass. Due to the physical limitations in the growth, this kinetically controlled nucleation would be responsible for producing the highly uniform, dense and perpendicularly oriented nanorods.     

Boundary layer-assisted chemical bath deposition of well-aligned ZnO rods on Si by a one-step method

ZnO seed layers and well-aligned ZnO single-crystalline micro/nanorods were synthesized on bare Si in one step without the assistance of catalysts by chemical bath deposition. Scanning electron microscopy (SEM) images and X-ray diffraction patterns show that the alignment of ZnO rods on Si(100) could be adjusted by varying the substrates’ angles of incline, the reaction temperature, and the precursor concentration. Transmission electron microscopy cross-sectional images demonstrate that a polycrystalline seed layer with (0002) preferred orientation was formed between the well-aligned rods and Si substrate placed vertically while a randomly oriented layer was formed between the randomly aligned rods and Si substrate placed horizontally. The formation of seed layers and alignment of as-synthesized ZnO rods were attributed to the assistance of boundary layers in a chemical bath deposition system.     

低温CVD法在玻璃衬底上制备ZnO纳米线阵列

采用化学气相沉积(CVD)法在镀Cr(20nm)的玻璃衬底上,低温制备了ZnO纳米线阵列。利用扫描电子显微镜(SEM)和X射线衍射(XRD)对样品的表面形貌和微结构进行了分析表征。结果表明:源分解温度1350℃,衬底温度450～500℃,氩气流量为35sccm时,ZnO纳米线在玻璃衬底上呈现有序生长;XRD谱图中只观测到ZnO(002)衍射峰。表明制备的纳米线阵列具有高度c轴择优取向生长特性和较高的结晶质量。     

The sensitivity and dynamic response of field ionization gas sensor based on ZnO nanorods

Field ionization gas sensors based on ZnO nanorods (50–300 nm in diameter, and 3–8 μm in length) with and without a buffer layer were fabricated, and the influence of the orientation of nano-ZnO on the ionization response of devices was discussed, including the sensitivity and dynamic response of the ZnO nanorods with preferential orientation. The results indicated that ZnO nanorods as sensor anode could dramatically decrease the breakdown voltage. The XRD and SEM images illustrated that nano-ZnO with a ZnO buffer layer displayed high c-axis orientation, which helps to significantly reduce the breakdown voltage. Device A based on ZnO nanorods with a ZnO buffer layer could distinguish toluene and acetone. The dynamic responses of device A to the NO _x compounds presented the sensitivity of 0.045 ± 0.007 ppm/pA and the response speed within 17–40 s, and indicated a linear relationship between NO _x concentration and current response at low NO _x concentrations. In addition, the dynamic responses to benzene, isopropyl alcohol, ethanol, and methanol reveals that the device has higher sensitivity to gas with larger static polarizability and lower ionization energy.     

ZnO薄膜的性质对水热生长ZnO纳米线阵列的影响

用水热法在ZnO薄膜上制备了直径、密度及取向可控的ZnO纳米线阵列。ZnO薄膜是通过原子层沉积(ALD)方法制备并在不同温度下退火处理得到的,退火温度对ZnO薄膜的晶粒尺寸、结晶质量和缺陷性质有很大的影响。而ZnO薄膜的性质对随后生长的ZnO纳米线的直径、密度及取向能起到调节控制的作用。通过扫描电子显微镜(SEM)、X射线衍射(XRD)仪和光致发光(PL)测试对ZnO薄膜和ZnO纳米线进行了表征。最后得到的垂直取向的ZnO纳米线阵列适合在发光二极管和太阳能电池等领域使用。     

纳米ZnO生长及性质分析

利用低压金属有机化学气相沉积(LP-MOCVD)技术,在表面含有ZnO颗粒作为催化剂的Si(111)衬底上制备了ZnO纳米柱阵列。采用X射线衍射(XRD)、喇曼光谱(Raman)、扫描电子显微镜(SEM)、光致发光(PL)谱分析了样品的晶体结构质量、表面性质和光学性质。结果表明,生长出来的纳米ZnO具有较好的c轴择优取向性。发现氧分压对ZnO纳米柱的生长有重要影响:当氧分压较低时,生长基于VLS机制;当氧分压较高时,生长基于VS机制;通过对N2O流量的控制可实现对ZnO纳米材料的可控生长。