低能Kr+离子束诱导蓝宝石晶体实验研究

使用微波回旋共振离子源制备蓝宝石(A向)自组织纳米结构,研究不同入射角度下Kr+离子束刻蚀蓝宝石表面形成的自组织纳米结构及其形成过程.采用等离子体与离子束刻蚀设备在不同入射角度下对蓝宝石样品表面进行刻蚀并通过Taylor Surf CCI2000非接触式表面测量仪和原子力显微镜分别对刻蚀后的蓝宝石样品的刻蚀速率及表面形貌进行分析.研究表明:当离子束能量为400eV,加速电压为200V,离子束流密度为310μA/cm2时,小角度入射下,蓝宝石样品表面出现纵向尺度较小的有序点状纳米结构;随着入射角度的增加,样品表面形成条纹状纳米结构,30°时形成短程有序且纵横比为0.87的条纹状结构;入射角度继续增加,纵向高度减小直至纳米结构消失;当角度达到60°附近,蓝宝石表面又出现条纹状结构,70°时形成了短程有序且纵横比为1.07的条纹状结构.自组织纳米结构的形成先以"岛状"形式出现,随后岛上生长出条纹状纳米结构,随着刻蚀时间的增加,岛状条纹结构纵向尺度增大且有序性增强,纳米结构的横向周期不变.     

不同离子束参数刻蚀蓝宝石纳米微结构及其光学性能

使用微波回旋共振离子源,研究Ar+离子束在不同角度、不同入射能量下对蓝宝石表面的刻蚀效果及光学性能。结果表明:所用能量800 eV,1 000 eV及1 200 eV时透过率都有很大的提升,由原来的50％提高到70％~80％,在能量为1 000 eV时增幅最大,能量为1 200 eV时增幅最小;在相同能量、不同角度下刻蚀后蓝宝石粗糙度呈先增大后减小的趋势,而在相同角度、不同能量下粗糙度方面无明显规律。刻蚀后表面形貌测试表明:角度不变,能量为1 000 eV时出现点状纳米结构,能量为1 200 eV时出现柱状纳米结构;能量不变,角度为10、50及80时出现了规律较明显的点状或条状纳米结构,角度为30时表面较为光滑。     

低能离子束诱导Ag表面纳米金字塔微结构

利用离子束溅射诱导实验方法,在单晶Si(100)基底上辅助沉积银膜,研究了低能Ar+离子束30°入射时,不同离子束能量和束流密度以及基底温度对Ag纳米结构的影响.结果表明:在较低基底温度下(32~100℃)辅助沉积银膜,膜层表面会呈现排列紧密、晶粒尺寸一致的金字塔状纳米结构.当温度升高时(32~200℃),纳米微结构横向尺寸λc迅速增加,而粗糙度先减小(32~100℃)后迅速增大(100~200℃);当离子束能量1 400eV、束流密度15~45μA/cm2时,在相同温度下,随着离子束束流密度的增大,纳米晶粒横向尺寸基本不变,粗糙度略有增加;当离子束流密度为15μA/cm2、能量1 000~1 800eV时,在相同温度下,随着离子束能量的增加,银纳米结构尺寸增加,而表面粗糙度先增加,然后缓慢减小.自组织纳米结构的转变是溅射粗糙化和表面驰豫机制相互作用的结果.     

离子源工艺参数对BCB胶刻蚀速率和表面粗糙度的影响

为了研究离子束刻蚀抛光过程中离子源工艺参数对刻蚀速率及表面粗糙度的影响,采用微波离子源为刻蚀离子源,以BCB胶为主要研究对象,研究了离子束能量、离子束电流、氩气流量、氧气流量对BCB胶刻蚀速率及表面粗糙度的影响,获得了离子源工艺参数与刻蚀速率及表面粗糙度演变的关系。研究结果表明,离子束能量在从400 eV增大到800 eV的过程中,刻蚀速率不断增大,从3.2 nm/min增大到16.6 nm/min;离子束流密度在从15 mA增大到35 mA的过程中,刻蚀速率不断增大,从1.1 nm/min增大到2.2 nm/min;工作气体中氧气流量从2 mL/min增大到10 mL/min的过程中,刻蚀速率会整体增大,在8 mL/min处略有下降。表面粗糙度变化不大,可以控制在1.8 nm以下。     

LPCVD自组织生长Si纳米量子点的发光机制分析

采用低压化学气相沉积 (LPCVD)方法 ,通过纯SiH4气体的表面热分解反应 ,在SiO2 表面上自组织生长了半球状Si纳米量子点 ,在室温条件下实验研究了其光致发光 (PL)特性 ,考察了PL效率与峰值能量随Si纳米量子点尺寸的变化关系。结果指出 ,当Si纳米量子点高度hc<5nm时 ,其PL效率基本保持不变。而当hc>5nm时 ,PL效率则急剧下降。同时 ,PL峰值能量随hc 的减少而增大 ,并与 (l/hc) 2 成正比依赖关系。如当hc 从 5 5nm减小至 0 8nm时 ,其峰值能量从 1 2 8eV增加到 1 4 3eV ,出现了约 0 15eV的谱峰蓝移。我们用量子限制效应 界面发光中心复合发光模型解释了这一实验结果     

纳米球刻蚀法制备的二维有序的CdS纳米阵列及其光学性质的研究

采用纳米球刻蚀(nanosphere lithography)技术,以自组装的聚苯乙烯纳米小球(polystyrene,PS小球)的单层膜为掩模,制备出二维有序的CdS纳米阵列.利用扫描电子显微镜(SEM)对样品结构进行了表征,用紫外—可见分光光度计对样品光学性质进行了分析.结果表明：制备的二维CdS纳米阵列是高度有序的,且与作为掩模的纳米小球的原始尺寸及排布结构一致;禁带宽度为2.60eV,相对于体材料的2.42eV,向短波长蓝移了0.18eV,表现出CdS材料在纳米结构点阵中的量子尺寸效应;CdS纳米 关键词： 纳米球刻蚀 二维CdS纳米有序阵列     

F原子与SiC(100)表面相互作用的分子动力学模拟

本文采用分子动力学模拟方法研究了F原子(能量在0.5—15 eV之间)与表面温度为300 K的SiC(100)表面的相互作用过程. 考察了不同能量下稳定含F反应层的形成过程和沉积、刻蚀过程的关系以及稳定含F反应层对刻蚀的影响. 揭示了低能F原子刻蚀SiC的微观动力学过程. 模拟结果表明伴随着入射F原子在表面的沉积量达到饱和,SiC表面将形成一个稳定的含F反应层. 在入射能量小于6 eV时,反应层主要成分为SiF₃,最表层为Si-F层. 入射能量大于6 eV时,反应层主要成分为SiF. 关键词： 分子动力学 刻蚀 能量 SiC     

衬底温度对Ga液滴在Al_(0.4)Ga_(0.6)As表面形成纳米结构的影响

本文研究了不同衬底温度对Ga液滴在Al_(0.4)Ga_(0.6)As表面形成纳米结构的影响,当300℃≤T≤380℃时,Ga液滴演化成纳米孔(Nanohole)和盘状结构(diffusion halo),纳米结构的尺寸随温度升高而增大.当T≥385℃时,盘状结构消失,形成一定平坦的Al_xGa_(1-x)As薄膜,Ga液滴在界面处继续向下刻蚀直至耗尽,形成平均直径为75 nm,平均孔深为5.52 nm的纳米孔.本文还通过盘状结构测出平均扩散长度△R,并拟合出Ga原子在Al_(0.4)Ga_(0.6)As表面的激活能E_A=0.78(±0.01) eV和扩散前因子D_0=0.15(×4.1~(±1))10~(-2 ) cm~2s~(-1).     

高电荷态离子126Xeq+引起GaN表面形貌变化研究

用不同电荷态的126Xeq+离子(9≤q≤30)在室温下轰击GaN晶体表面,经原子力显微镜分析表明,当q>18,辐照区域由隆起转为显著的刻蚀.被轰击后的GaN晶体表面形貌主要取决于入射离子的电荷态.同时,样品表面形貌还与入射离子的剂量和入射角有关;在实验参数范围,与入射离子的初动能没有明显关系(180 keV≤Ek≤600 keV).当入射离子的电荷态q=18,与样品表面法线成60°角倾斜入射和垂直表面入射时,样品的表面几乎没有变化,只是倾斜入射后有很微小的隆起;当q＜18时,样品表面膨胀隆起,粗糙度增强,倾斜入射时表面隆起比垂直入射时更明显,而且都有清晰的峰状分界区;当q＞18时,样品表面被蚀刻呈凹陷状,有明显的齿状刻痕,且侵蚀深度与离子剂量近似呈线性关系,倾斜入射时的刻蚀深度大于垂直入射时的刻蚀深度.     

非晶氧化钛薄膜形成过程中钛离子能量对表面结构影响的机理

研究了非晶氧化钛薄膜沉积过程中入射钛离子能量对表面结构形成机理以及薄膜特性的影响.模拟结果表明,通过提高入射钛离子能量,可以有效降低成膜表面粗糙度,从而减小薄膜表面的光学散射损耗.研究发现,当入射离子能量提高后,薄膜生长模式从"岛"状生长过渡到了"层"状生长,且离子入射点附近的平均扩散系数也有显著增加,这有利于形成更加平整的高质量薄膜表面.     

Self-organized dot patterns on Si surfaces during noble gas ion beam erosion

The erosion of target materials with energetic ions can lead to the formation of patterns on the surface. During low-energy (?2000 eV) noble gas (Ne⁺, Ar⁺, Kr⁺, Xe⁺) ion beam erosion of silicon surfaces dot patterns evolve on the surface. Dot structures form at oblique ion incidence of 75° with respect to surface normal, with simultaneous sample rotation, at room temperature. The lateral ordering of dots increases while the dot size remains constant with ion fluence, leading to very well ordered dot patterns for prolonged sputtering. Depending on ion beam parameters, dot nanostructures have a mean size from 25 nm up to 50 nm, and a mean height up to 15 nm. The formation of dot patterns depends on the ion/target mass ratio and on the ion energy. The temporal evolution and the lateral ordering of these nanostructures is studied using scanning force microscopy (AFM).     

Self-organized nanogratings in glass irradiated by ultrashort light pulses

Periodic nanostructures are observed inside silica glass after irradiation by a focused beam of a femtosecond Ti:sapphire laser. Backscattering electron images of the irradiated spot reveal a periodic structure of stripelike regions of approximately 20 nm width with a low oxygen concentration, which are aligned perpendicular to the laser polarization direction. These are the smallest embedded structures ever created by light. The period of self-organized grating structures can be controlled from approximately 140 to 320 nm by the pulse energy and the number of irradiated pulses. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of the bulk electron plasma wave, resulting in the periodic modulation of electron plasma concentration and the structural changes in glass.     

Femtosecond pulse laser-induced self-organized nanogratings on the surface of a ZnSe crystal

Periodic nanostructures are observed on the surface of ZnSe after irradiation by a focused beam of a femtosecond Ti:sapphire laser, which are aligned perpendicular to the laser polarization direction. The period of self-organized grating structures is about 160 nm. The phenomenon is interpreted in terms of interference between the incident light field and the surface scattered wave of 800-nm laser pulses. With the laser polarization parallel to the moving direction we produce long-range Bragg-like gratings by slowly moving the crystal under a fixed laser focus. The nanograting orientation is adjusted by laser polarization and the accumulation effect. PACS 81.16.Rf; 78.67.-n; 33.80.Rv; 82.53.Mj; 81.16.-c     

Femtosecond pulse laser-induced self-organized nanostructures on the surface of ZnO crystal

This paper reports self-organized nanostructures observed on the surface of ZnO crystal after irradiation by a focused beam of a femtosecond Ti：sapphire laser with a repetition rate of 250kHz. For a linearly polarized femtosecond laser, the periodic nanograting structure on the ablation crater surface was promoted. The period of self-organization structures is about 180 nm. The grating orientation is adjusted by the laser polarization direction. A long range Bragglike grating is formed by moving the sample at a speed of 10μm/s. For a circularly polarized laser beam, uniform spherical nanoparticles were formed as a result of Coulomb explosion during the interaction of near-infrared laser with ZnO crystal.     

Features of Ion-Beam Polishing of the Surface of Sapphire

The effect of an argon ion beam on the surface of sapphire is studied at different technological parameters: the ion energy, and the angle α between the sapphire surface and the ion-beam axis. The roughness of the sapphire surface is analyzed before and after ion polishing. The optimum ion-beam parameters are determined, at which the surface roughness after polishing decreases to 0.8 nm. At angles α = 20°–30°, the relief of the sapphire surface is found to become wavy. The study of the impact of the ion energy on the roughness of the sapphire surface in the 400–1200-eV range reveals that an increase in the energy of the ion beam to 1200 eV is accompanied with a decrease by 8.8 times in the roughness which falls below the level of 3 nm.     

Study on the orientation of silver films by ion-beam assisted deposition

Low energy ion beam assisted deposition (IBAD) was employed to prepare Ag films on Mo/Si (100) substrate. It was found that Ag films deposited by sputtering method without ion beam bombardment were preferred (111) orientation. When the depositing film was simultaneously bombardment by Ar⁺ beam perpendicular to the film surface at ion/atom arrival ratio of 0.18, the prepared films exhibited weak (111) and (200) mixed orientations. When the direction of Ar⁺ beam was off-normal direction of the film surface, Ag films showed highly preferred (111) orientation. Monte Carlo method was used to calculate the sputtering yields of Ar⁺ ions at various incident and azimuth angles. The effects of channeling and surface free energy on the crystallographic orientation of Ag films were discussed.     

Pt(111)表面低能溅射现象的分子动力学模拟

利用嵌入原子方法的原子间相互作用势，通过分子动力学模拟，详细研究了贵金属原子在Pt (111)表面的低能溅射现象.模拟结果显示：对于垂直入射情况，入射原子的质量对Pt (11 1)表面的溅射阈值影响不大.当入射原子的能量小于溅射阈值时，入射原子基本以沉积为主 ；当入射原子的能量大于溅射阈值时，溅射产额随入射原子能量的增加而线性增大；当入射 原子能量达到200 eV时，各种入射原子的溅射产额都达到或接近1，此时入射原子主要起溅 射作用.溅射原子发射的角分布概率和溅射花样与高能溅射相类似.研究表明：与基于二体碰 撞近似的线性级联溅射理论不同，当入射原子能量大于溅射阈值时，低能入射原子的溅射产 额正比于入射原子的约化能量和入射原子与基体原子的质量比.通过对低能入射原子的钉扎 能力分析，提出了支配低能溅射的入射原子反射物理机理. 关键词： 分子动力学模拟、低能溅射     

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The molecular dynamics simulation of interaction between CH⁺ with various energy and fusion material tungsten is conducted. The simulated results show that in the incident process, the sputtering rates of C and H atoms change suddenly at the different exposure doses when the incident energy is 50, 100 and 150eV respectively, a few of W atoms are sputtered in the interaction process, but the sputtering rate is less than 0.24%. When the exposure dose is about 3.92×10¹⁶cm⁻², the incident energy is 50eV, a hydrocarbon firm without W atom is formed on the sample surface bombarded by the ions. A mixed film of W, C and H is formed at the other energy. The deposited rates of C and H atom first decrease then increase with the incident energy increament, the minimum deposited rats appear at 250 and 200eV respectively. The density profiles of C, H atoms, C−H, C−C, W−C bonds in the sample after bombardment move towards the inside of sample, and the C sp³ dominated the sample.