Study on the orientation of silver films by ion-beam assisted deposition |
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Authors: | Tao Feng Bingyao Jiang Xi Wang |
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Institution: | a Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University, Shanghai 200062, China b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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Abstract: | Low energy ion beam assisted deposition (IBAD) was employed to prepare Ag films on Mo/Si (100) substrate. It was found that Ag films deposited by sputtering method without ion beam bombardment were preferred (111) orientation. When the depositing film was simultaneously bombardment by Ar+ beam perpendicular to the film surface at ion/atom arrival ratio of 0.18, the prepared films exhibited weak (111) and (200) mixed orientations. When the direction of Ar+ beam was off-normal direction of the film surface, Ag films showed highly preferred (111) orientation. Monte Carlo method was used to calculate the sputtering yields of Ar+ ions at various incident and azimuth angles. The effects of channeling and surface free energy on the crystallographic orientation of Ag films were discussed. |
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Keywords: | 68 55 Jk 81 15 Jj |
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