钽酸锂铁电相变的喇曼光谱研究

本文测定了钽酸锂晶体从室温到居里温度以上(20—800℃)的喇曼光谱。没有观察到软模现象。我们发现在居里点附近,铁电相和顺电相的喇曼光谱十分一致,经过居里点喇曼光谱不发生变化。根据这个新的实验结果和文献上关于用中子衍射测定的晶体结构资料,我们做出了钽酸锂的铁电相变为有序无序型的推论。 关键词：     

近化学计量比钽酸锂晶体生长及其周期极化

通过添加助熔剂K2O,制备了近化学计量比钽酸锂晶体。晶体没有开裂和孪晶现象。晶体的居里温度为(673±0.4)℃。通过在晶片表面形成占空比60%的聚酰亚胺周期结构并利用LiCl饱和溶液体电极施加极化电压,采用自动极化技术,制备出Z向切割0.5 mm厚的均匀周期极化化学计量比钽酸锂(SLT)晶片,晶片的畴反转占空比接近50%,并以1064 nm的Nd+3…YVO4激光器作为抽运源进行了光学实验。     

近化学计量比钽酸锂畴反转特性研究

采用助熔剂提拉法生长了非掺杂及掺镁近化学剂量比钽酸锂晶体.氢氟酸腐蚀晶片的金相显微镜观察结果显示,化学剂量比钽酸锂的畴结构为六边形.利用自行研制的极化设备对晶体进行极化实验,采用外加短脉冲极化电场,测定了近化学计量比钽酸锂单晶的畴反转特性,得到了完全反转的畴结构. 关键词： 近化学剂量比钽酸锂 畴结构 矫顽场 极化电流     

紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转

对紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转进行了实验研究。波长为351 nm的连续紫外激光被聚焦在近化学计量比钽酸锂晶体的-z表面,同时沿与晶体自发极化相反的方向施加均匀外电场。实验证实紫外激光辐照可以有效地降低晶体畴反转所需的矫顽电场,采用数字全息干涉测量技术检测证实在激光辐照区域实现局域畴反转。研究表明采用紫外激光诱导可以实现对近化学计量比钽酸锂晶体铁电畴反转的局域控制。提出了物理机理的理论分析,认为外电场和激光辐照场的共同作用在晶体内部产生高浓度、大尺寸的缺陷结构,缺陷一定程度上降低畴体成核和畴壁运动所需要克服的退极化能和畴壁能,实现激光诱导畴反转。     

多通道辐射高温计与VISAR的联合诊断技术

 利用二级轻气炮加载手段,开展了多通道辐射高温计结合可测量任意反射表面速度干涉仪（VISAR）的联合诊断技术研究。通过测量钽酸锂单晶的冲击相变,以确定联合诊断技术的可行性。结果显示,在同一发实验中,成功地获得了样品的界面速度剖面和光谱辐亮度历史,由此得到了钽酸锂单晶冲击相变的实验证据,表明该联合诊断技术是可行有效的。该技术对今后开展其它材料的高压物性研究具有一定的参考价值。     

KTa_(1-x)Nb_xO_3单晶的相变软模(英文)

用Ｒａｍａｎ散射研究了四方钽铌酸钾单晶的顺电 铁电结构相变,在相变时发现和分析了一个凝聚的软晶格振动模ｖ５,它是产生于Ｏ２ Ｏ３键的对称弯曲振动。     

鈰铕铌酸锂的双光束耦合异常温度特性与结构相变

报道铕铌酸锂晶体双光束耦合在５５，７０和１１０℃附近出现的异常温度现象，该现象与晶体在这些点发生了结构相变有关，相变诱发出内电场，改变了空间电荷场的结构，影响了双光束耦合。采用唯象的办法给出相变电场随温度的变化公式，结合一能级单载流子带导模型给出了理论曲线，能很好地解释实验。推算出相变电场的数量级介于扩散电场和最大空间电荷场之间，为１０^５Ｖ·ｍ^-1。 关键词：     

准位相匹配铌酸锂波导倍频特性分析与优化设计

用标量有限元方法计算了周期性极化的铌酸锂光波导中模折射率和模场分布,并在计算中引入铌酸锂晶体折射率与温度变化的关系,分析了准位相匹配铌酸锂波导倍频效率与极化反转光栅周期、基频光波长、波导器件温度等关系.理论分析与实验结果符合得很好.在此基础上,分析了波导制作参数与倍频效率、光栅周期与晶体温度,以及温度带宽与光栅通光方向长度等关系,进而对铌酸锂波导倍频器件进行优化设计. 关键词： 铌酸锂 光波导 准位相匹配 有限元     

钽酸锂晶体组分的OH-红外吸收光谱测定方法

研究了钽酸锂晶体Li含量(组分)的OH-红外吸收谱测定方法.利用气相输运平衡的方法制备不同组分的钽酸锂晶体样品,使用三峰结构对钽酸锂晶体的OH-吸收谱进行拟合,考虑了晶体中H 的浓度对拟合参量的影响,并发现位于3 461 cm-1的分解峰L的半高宽不受晶体中H 浓度的影响,具有很好的稳定性,非常适宜用来进行钽酸锂晶体组分的确定,最后给出了该峰的半高宽(ΓL)对组分(CLi)的依赖关系.     

掺铁铌酸锂晶体中光致散射的锂组分和温度依赖关系研究

研究了单掺铁铌酸锂晶体的光致散射行为随锂组分以及温度的变化关系.实验表明,随晶体组分的升高,光致散射得到了大幅抑制;不同组分晶体光致散射被完全抑制的温度不同.由此提出掺铁铌酸锂晶体在48.9 mol%-49.3 mol%范围内可能存在一临界锂组分,当晶体组分超过这一临界组分时,晶体光致散射被大幅抑制,而光致散射行为的温度依赖关系明显改变.     

Phase transitions in [Ni(NH3)6](NO3)2

Electric permittivity ^* = ′ − i″ of nickel-hexammino nitrate (NHN) has been measured within the range of temperature from 9 to 300 K at a frequency of 8.8 GHz (X-band). It has been found that the phase transitions at T_k1 = 247 K and T_k2 = 90 K are discontinuous structural transitions between centrosymmetric phases, whereas the transition at T_c = 63 K is a continuous phase transition (glass?).     

ELECTROCHEMICAL OXIDATION OF La2CuO4 SINGLE CRYSTALS

Bulk superconducting La₂CuO_4+δ single crystals are obtained by using electrochemical intercalation technique from the as-grown insulating samples. Oxidation is carried out by constant current I=10μA at temperature T=70℃ and room temperature, respectively. Structure and magnetic properties are studied by low-temperature X-ray diffraction and susceptibility measurements. A superconducting phase with T_c of 19K and δ-0.12 can be attributed to the formation of oxygen clusters. Room temperature oxidation is inhomogeneous: two superconducting phases with T_c1 of 24K and T_c2 of 8K and an antiferromagnetic phase are coexisting in the crystal. It is found that the appearance of T_c in this system has the "step" tendency.     

LiKSO4的无公度相

本文用多晶X射线衍射配合差热分析的方法研究了LiKSO₄室温以上的相变。发现当温度在熔点以下到675℃之间,晶体结沟与α-K₂SO₄的高温相同构,α相最可能的空间群为P6₃/mmc.在T_i=675℃以下出现调制结构,类似K₂WO₄,K₂MoO₄等的无公度相;参数κ的值由0.492(640℃)而随温度变化。在470℃出现整合相变κ=0.500,整合后的结构为室温相的超点阵。然后在439℃转变为室温相(空间群为P6₃)。 关键词：     

LaAlO3晶体中相变与缺陷研究

从室温到800℃范围内用锥光干涉图实时观察LaAlO₃晶体中的相变,发现在560℃存在由三角相转变为立方相的相变,并由X射线衍射法得到证实,同时对孪晶的形态,畴区的结晶学取向规律,孪晶的密集度以及畴和包裹体的双折射像在T_c附近的变化规律进行了系统的研究。 关键词：     

X-ray diffraction study of a structural phase transition in (NbSe4)3I

The second-order structural phase transition was observed by X-ray diffraction technique in (NbSe₄)₃I. The transition temperature (T_c) was 274.2 K. No evidence of the formation of the charge-density wave was found out. Temperature dependence of the intensity of (0,5,12) reflection obeys the Landau theory of the second kind of phase transition near T_c. Temperature dependence of the integral breadth of (0,0,12) reflection indicates the effect of the soft-phonon mode below T_c. The existence of the structural phase transition, probably not associated with charge-density-wave formation, suggests the unique nature of (NbSe₄)Z₃I in the new series of compounds (MSe₄)_xI (M=Nb, Ta).     

Electron hopping and optic phonons in Eu3S4

Raman scattering on single crystals of Eu₃S₄ does not show the allowed q=o phonon modes in the cubic phase and exhibits no new modes in the distorted low temperature phase (T<186 K). Above the Curie temperature T_c=3.8 K the scattering is dominated by a spin-disorder induced one-phonon density of states allowing for the observation of the zone boundary phonon breathing mode of the S^2?ions. This mode does not show any anomaly near the charge order -disorder phase transition T_t=186 K. Temperature tunable spin fluctuations associated with the temperature activated Eu²⁺→Eu³⁺ electron hopping are detected in the scattering intensity, superimposed on the usual thermal spin disorder.     

YBa2Cu3O7-δ外延薄膜的有效钉扎势

在0—7T磁场范围内，测量了不同测量电流密度下YBa₂Cu₃O_7-δ外延薄膜的电阻温度关系.实验结果表明，临界温度以下，混合态的耗散电阻率能很好地用热激活磁通蠕动描述.有效钉扎势的电流密度关系遵守Zeldov等人提出的对数关系，有效钉扎势的温度和磁场关系遵守U∝(1-T/T_c)H^-α关系，其中α=0.63，与热激活磁通点阵位错运动模型相一致，表明样品具有2D涡旋性质. 关键词：     

Two-dimensional critical behaviour in antiferrodistortive Al ur6(CIO4)3 and Ga ur6(ClO4)3

Critical behaviour with dimensionality d = 2 has been observed for the 300 K antiferrodistortive phase transition in Al ur₆(ClO₄)₃ and Ga ur₆(ClO₄)₃ by means of the temperature dependence of the ESR parameter D. The systems exhibited d = 2 behaviour in the static critical behaviour for T<T_c?40 K for T>T_c + 40 K. From the ESR data including line width measurements the local order parameter relaxation rate ω₁ has been obtained for various temperatures above T_c, with a lowest value of ω₁ = 150 MHz at T_c + 15 K     

Thermoreflectance of single-crystal HgCr2Se4 near the ferromagnetic-to-paramagnetic phase transition

The thermoreflectance of the ferromagnetic semiconductor HgCr₂Se₄ (T_c = 106 K) has been measured between 45 and 340 K in the photon energy range from 1.7 to 2.8 eV. The spectral line shape and the signal intensity behave critically near the magnetic phase transition. The optical transitions and the effect of magnetic ordering are discussed.