Formation of graphene on Ru（0001） surface

We report on the formation of a graphene monolayer on a Ru(0001) surface by annealing the Ru(0001) crystal. The samples are characterized by scanning tunnelling microscopy (STM) and Auger electron spectroscopy (AES). STM images show that the Moir\'{e} pattern is caused by the graphene layer mismatched with the underlying Ru(0001) surface and has an $N\times N$ superlattice. It is further found that the graphene monolayer on a Ru(0001) surface is very stable at high temperatures. Our results provide a simple and convenient method to produce a graphene monolayer on the Ru(0001) surface, which is used as a template for fabricating functional nanostructures needed in future nano devices and catalysis.     

Electronic structures and coronene on Ru（0001）： vibrational properties of first-principles study

We calculate the configurations,electronic structures,vibrational properties at the coronene/Ru(0001) interface,and adsorption of a single Pt atom on coronene/Ru(0001) based on density functional theory calculations.The geometric structures and electronic structures of the coronene on Ru(0001) are compared with those of the graphene/Ru(0001).The results show that the coronene/Ru(0001) can be a simplified model system used to describe the interaction between graphene and ruthenium.Further calculations of the vibrational properties of coronene molecule adsorbed on Ru(0001) suggest that the phonon properties of differently corrugated regions of graphene on Ru(0001) are different.This model system is also used to investigate the selective adsorption of Pt atoms on graphene/Ru(0001).The configurations of Pt on coronene/Ru(0001) with the lowest binding energy give clues to explain the experimental observation that a Pt cluster selectively adsorbs on the second highest regions of graphene/Ru(0001).This work provides a simple model for understanding the adsorption properties and vibrational properties of graphene on Ru(0001) substrate.     

Adsorption behavior of triphenylene on Ru(0001) investigated by scanning tunneling microscopy

As a representative of small aromatic molecules, triphenylene(TP) has markedly high carrier mobility and is an ideal precursor for building graphene nanostructures. We mainly investigated the adsorption behavior of TP molecules on Ru(0001) by using scanning tunneling microscopy(STM). In submonolayer regime, TP molecules are randomly dispersed on Ru(0001) and the TP overlayer can be thoroughly dehydrogenated and converted into graphene islands at 700 K. Due to weak interaction between TP molecules and graphene, the grooves formed among graphene islands have confinement effect on TP molecules. TP adopts a flat-lying adsorption mode and has two adsorption configurations with the 3-fold molecular axis aligned almost parallel or antiparallel to the ■ direction of the substrate. At TP coverages of 0.6 monolayer(ML)and 0.8 ML, the orientational distributions of the two adsorption configurations are equal. At about 1.0 ML, we find the coexistence of locally ordered and disordered phases. The ordered phase includes two sets of different superstructures with the symmetries of ■R23.41° and p(4 × 4), respectively. The adsorption behavior of TP on Ru(0001) can be attributed to the delicate balance between molecule–substrate and molecule–molecule interactions.     

Transport properties in monolayer–bilayer–monolayer graphene planar junctions

The transport study of graphene based junctions has become one of the focuses in graphene research. There are two stacking configurations for monolayer–bilayer–monolayer graphene planar junctions. One is the two monolayer graphene contacting the same side of the bilayer graphene, and the other is the two-monolayer graphene contacting the different layers of the bilayer graphene. In this paper, according to the Landauer–Büttiker formula, we study the transport properties of these two configurations. The influences of the local gate potential in each part, the bias potential in bilayer graphene,the disorder and external magnetic field on conductance are obtained. We find the conductances of the two configurations can be manipulated by all of these effects. Especially, one can distinguish the two stacking configurations by introducing the bias potential into the bilayer graphene. The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment.     

Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

This paper reports that ion implantation to a dose of 1×10¹⁷ ions/cm² was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600-900℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600-900℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600- 750℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at \sim 850℃ and \sim 750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900℃.     

Molecular dynamics study of temperature-dependent ripples in monolayer and bilayer graphene on 6H—SiC surfaces

Using classical molecular dynamics and a simulated annealing technique,we show that microscopic corrugations occur in monolayer and bilayer graphene on 6H-SiC substrates.From an analysis of the atomic configurations,two types of microscopic corrugations are identified,namely periodic ripples at room temperature and random ripples at high temperature.Two different kinds of ripple morphologies,each with a periodic structure,occur in the monolayer graphene due to the existence of a coincidence lattice between graphene and the SiC terminated surface(Si-or C-terminated surface).The effect of temperature on microscopic ripple morphology is shown through analysing the roughness of the graphene.A temperature-dependent multiple bonding conjugation is also shown by the broad distribution of the carbon-carbon bond length and the bond angle in the rippled graphene on the SiC surface.These results provide atomic-level information about the rippled graphene layers on the two polar faces of the 6H-SiC substrate,which is useful not only for a better understanding of the stability and structural properties of graphene,but also for the study of the electronic properties of graphene-based devices.     

Faraday rotations,ellipticity, and circular dichroism in magneto-optical spectrum of moire superlattices

We study the magneto-optical conductivity of a number of van der Waals heterostructures, namely, twisted bilayer graphene, AB–AB and AB–BA stacked twisted double bilayer graphene and monolayer graphene and AB-stacked bilayer graphene on hexagonal boron nitride. As the magnetic field increases, the absorption spectrum exhibits a self-similar recursive pattern reflecting the fractal nature of the energy spectrum. Whilst twisted bilayer graphene displays only weak circular dichroism, the other four structures display strong circular dichroism with monolayer graphene and AB-stacked bilayer graphene on hexagonal boron nitride being particularly pronounced owing to strong inversion symmetry breaking properties of the hexagonal boron nitride layer. As the left and right circularly polarized light interact with these structures differently, plane-polarized incident light undergoes a Faraday rotation and gains an ellipticity when transmitted. The size of the respective angles is on the order of a degree.     

Effect of strain on geometric and electronic structures of graphene on Ru(0001) surface

The atomic and electronic structures of a graphene monolayer on a Ru(0001) surface under compressive strain are investigated by using first-principles calculations. Three models of graphene monolayers with different carbon periodicities due to the lattice mismatch are proposed in the presence and the absence of the Ru(0001) substrate separately. Considering the strain induced by the lattice mismatch, we optimize the atomic structures and investigate the electronic properties of the graphene. Our calculation results show that the graphene layers turn into periodic corrugations and there exist strong chemical bonds in the interface between the graphene N×N superlattice and the substrate. The strain does not induce significant changes in electronic structure. Furthermore, the results calculated in the local density approximation (LDA) are compared with those obtained in the generalized gradient approximation (GGA), showing that the LDA results are more reasonable than the GGA results when only two substrate layers are used in calculation.     

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

In this paper,high temperature direct current(DC) performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃.At a gate voltage of-8 V(far from Dirac point),the drainsource current decreases obviously with increasing temperature,but it has little change at a gate bias of +8 V(near Dirac point).The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies.Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures.The devices exhibit almost unchanged DC performances after high temperature measurements at 200℃ for 5 hours in air ambience,demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices.     

Ultrathin Al Oxide Seed Layer for Atomic Layer Deposition of High-κ Al_2O_3 Dielectrics on Graphene

Due to the lack of surface dangling bonds in graphene,the direct growth of high-κ films via atomic layer deposition(ALD) technique often produces the dielectrics with a poor quality,which hinders its integration in modern semiconductor industry.Previous pretreatment approaches,such as chemical functionalization with ozone and plasma treatments,would inevitably degrade the quality of the underlying graphene.Here,we tackled this problem by utilizing an effective and convenient physical method.In detail,the graphene surface was pretreated with the deposition of thermally evaporated ultrathin Al metal layer prior to the Al_2O_3 growth by ALD.Then the device was placed in a drying oven for 30 min to be naturally oxidized as a seed layer.With the assistance of an Al oxide seed layer,pinhole-free Al_2O_3 dielectrics growth on graphene was achieved.No detective defects or disorders were introduced into graphene by Raman characterization.Moreover,our fabricated graphene topgated field effect transistor exhibited high mobility(～6200 cm~2V~(-1)s~(-1)) and high transconductance(～117 μS).Thin dielectrics demonstrated a relative permittivity of 6.5 over a large area and a leakage current less than1.6 p A/μm~2.These results indicate that Al oxide functionalization is a promising pathway to achieve scaled gate dielectrics on graphene with high performance.     

Effects of graphene defects on Co cluster nucleation and intercalation

Four kinds of defects are observed in graphene grown on Ru(0001) surfaces. After cobalt deposition at room temperature, the cobalt nanoclusters are preferentially located at the defect position. By annealing at 530℃, cobalt atoms intercalate at the interface of Graphene/Ru(0001) through the defects. Further deposition and annealing increase the sizes of intercalated Co islands. This provides a method of controlling the arrangement of cobalt nanoclusters and also the density and the sizes of intercalated cobalt islands, which would find potential applications in catalysis industries, magnetism storage, and magnetism control in future information technology.     

Electronic phase diagram of NaFelxCoxAs investigated by scanning tunneling microscopy

Our recent scanning tunneling microscopy （STM） studies of the NaFelxCoxAs phase diagram over a wide range of dopings and temperatures are reviewed. Similar to the high-Tc cuprates, the iron-based superconductors lie in close proximity to a magnetically ordered phase. Therefore, it is widely believed that magnetic interactions or fluctuations play an important role in triggering their Cooper pairings. Among the key issues regarding the electronic phase diagram are the properties of the parent spin density wave （SDW） phase and the superconducting （SC） phase, as well as the interplay between them. The NaFe l-xCoxAs is an ideal system for resolving these issues due to its rich electronic phases and the charge-neutral cleaved surface. In our recent work, we directly observed the SDW gap in the parent state, and it exhibits unconventional features that are incompatible with the simple Fermi surface nesting picture. The optimally doped sample has a single SC gap, but in the underdoped regime we directly viewed the microscopic coexistence of the SDW and SC orders, which compete with each other. In the overdoped regime we observed a novel pseudogap-like feature that coexists with supercon- ductivity in the ground state, persists well into the normal state, and shows great spatial variations. The rich electronic structures across the phase diagram of NaFel_xCoxAs revealed here shed important new light for defining microscopic models of the iron-based superconductors. In particular, we argue that both the itinerant electrons and local moments should be considered on an equal footing in a realistic model.     

Moire patterns and step edges on few-layer graohene grown on nickel films

Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir6 patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir6 patterns while both sublattices are seen in regions with moir6 pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.     

Invariant expression for tunneling rate under canonical transformations

The original formula to calculate the tunneling rate through event horizons is apparently dependent on the type of coordinates used.In this paper,we propose an invariant expression under canonical transformations to study the tunneling effect.Moreover,the problem of factor 2 is solved naturally.As an application of this expression,we obtain the same tunneling rate both in the Schwarzschild and the Painleve′coordinates.It is shown that once the suitable formula to calculate tunneling rate is correctly identified,the tunneling method is manifestly covariant.     

Correction to Hawking Tunneling Radiation from Global Monopole Charged Black Hole

Considering the self-gravitation and energy conservation as well as charge conservation, we extend Medved and Vagenas＇s quantum tunneling method to the global monopole charged black hole, and give a correction to Hawking radiation of a charged particle.     

Tunneling of Bose-Einstein condensate and interference effect in a harmonic trap with a Gaussian energy barrier

The tunneling effect of Bose-Einstein condensate (BEC) in a harmonic trap with a Gaussian energy barrier is studied in this paper. The initial condensate evolves into two separate moving condensates after the tunneling time under certain conditions. The interference pattern between the two moving condensates is given as a comparison and as a further demonstration of the existence of the global phase.     

Transmission and Dwell Time Oscillations Caused by Coexistence of Tunneling and Propagating in a Trapezoidal Barrier

Abstract A refined one of our exactly solvable trapezoidal barrier potential model [Thin Solids Films, 414 （2002） 136）] for metal-insulator-metal tunnel junctions has Seen presented. According to the refined model, the longitudinal kinetic energy （ExL） and the effective mass （m^＊L） of the electron8 in the electrode on the left of the barrier distinguish from that on the right. It is found that as ExL is greater than the shorter side of the resultant trapezoidal barrier potential, there will be a coexistence of the tunneling and propagating in the barrier. The results demonstrate that the damped oscillating electron waves localized in the propagating barrier subregion lead to the oscillation and enhancement in the transmission coefficient DT and dwell time TD. For the barrier height φ1=2.6 eV and φ2 = 1.4 eV, the width d=22 A and ExL = 1.0 eV, DT and TD have a maximum of 0.054 and 0.58x10^-15 s at V = 2.04 V and 2.18 V, respectively. This suggests that a real tunneling may be a hybrid.     

Tunneling Conductance in dx2-y2 ＋idly Mixed Wave Superconductor Graphene Junctions

Using the extended Blonder-Tinkham-Klapwijk formalism, we investigate the conductance spectra of normal metal/dx2-y2 ＋ idxy mixed wave superconductor graphene junctions. It is found that the conductance spectra vary strongly with the orientation of the gap and the amplitude ratio （Δ1/Δ0） of two components for dx2-y2 ＋ idxy mixed wave. The zero bias conductance is nearly 2 and the conductance peak vanishes in doped graphene for a = 0 and Δ1/Δ0 = 1. The conductance increases with increasing the amplitude ratio of two components for α =π/4 and Δ1/Δ0 -- 1. The ZBCP becomes observable wide with 1 〈 EF/Δ0 〈 100 for α= π/4 and Δ1/Δ0 = 1. This property is different from that in normal metal/dx2-y2 wave superconductor graphene junctions.     

Hawking Radiation of Charged Particles in Reissner-NordstrSm Black Hole

We extend the method that Banerjee and Majhi have used to discuss Hawking radiation. Under the condition that the total energy and electrical charge of spacetime are conserved, we investigate Hawking radiation of the charged black hole by a new Tortoise coordinate transformation. Taking the reaction of the radiation of the particle to the spacetime into consideration, we not only derive the radiation spectrum that satisfies the unitary principle in quantum mechanics but also show that the contribution of ingoing particles is equal to the one of outgoing particles on the similar chemical potential term in radiation spectrum caused by charged particles.     

Adiabatic tunneling of Bose–Einstein condensates with modulated atom interaction in a double-well potential

We study the adiabatic tunneling of Bose–Einstein condensates in a symmetric double-well potential when the interaction strength between the atoms is modulated linearly or in a cosine periodic form. It is shown that the system evolves along a nonlinear eigenstate path. In the case of linear modulation under the adiabatic approximation conditions, the tunneling probability of the condensate atoms to the other potential well is half. However, when the system is periodically scanned in the adiabatic process, we find an interesting phenomenon. A small change in the cycle period can lead to the condensate atoms returning to the right well or tunneling to the left well. The system comes from a linear eigenstate back to a nonlinear one, which is completely different from the linear eigenstate evolution. We explain the results by using the energy level and the phase diagram.