| Transport properties in monolayer–bilayer–monolayer graphene planar junctions |
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| 引用本文： | 储开龙,王孜博,周娇娇,江华.Transport properties in monolayer–bilayer–monolayer graphene planar junctions[J].中国物理 B,2017,26(6):67202-067202. |
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| 作者姓名： | 储开龙 王孜博 周娇娇 江华 |
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| 作者单位： | 1.College of Physics, Optoelectronics and Energy Soochow University, Suzhou 215006, China;2.Microsystems and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No. 11374219), the Jiangsu Provincial Natural Science Foundation, China (Grant No. BK20160007), and the Research Fund for the Doctoral Program of Higher Education of China. |
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| 摘 要： | The transport study of graphene based junctions has become one of the focuses in graphene research. There are two stacking configurations for monolayer–bilayer–monolayer graphene planar junctions. One is the two monolayer graphene contacting the same side of the bilayer graphene, and the other is the two-monolayer graphene contacting the different layers of the bilayer graphene. In this paper, according to the Landauer–Büttiker formula, we study the transport properties of these two configurations. The influences of the local gate potential in each part, the bias potential in bilayer graphene,the disorder and external magnetic field on conductance are obtained. We find the conductances of the two configurations can be manipulated by all of these effects. Especially, one can distinguish the two stacking configurations by introducing the bias potential into the bilayer graphene. The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment.
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| 收稿时间： | 2017-02-24 |
Transport properties in monolayer-bilayer-monolayer graphene planar junctions |
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| Institution: | 1.College of Physics, Optoelectronics and Energy Soochow University, Suzhou 215006, China;2.Microsystems and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China |
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| Abstract: | The transport study of graphene based junctions has become one of the focuses in graphene research. There are two stacking configurations for monolayer-bilayer-monolayer graphene planar junctions. One is the two monolayer graphene contacting the same side of the bilayer graphene, and the other is the two-monolayer graphene contacting the different layers of the bilayer graphene. In this paper, according to the Landauer-Büttiker formula, we study the transport properties of these two configurations. The influences of the local gate potential in each part, the bias potential in bilayer graphene, the disorder and external magnetic field on conductance are obtained. We find the conductances of the two configurations can be manipulated by all of these effects. Especially, one can distinguish the two stacking configurations by introducing the bias potential into the bilayer graphene. The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment. |
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| Keywords: | monolayer graphene bilayer graphene graphene planar junction |
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