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本文研究了高掺杂Ga对ZnSe:Ga,Cu晶体中深中心光致发光谱带的影响。首次在高掺杂ZnSe:Ga,Cu中观察到了Cu-G带峰值位置随Ga浓度增大向长波方向移动的现象,并把它归因于高浓度的Ga和Cu相互作用,产生了谱峰为5580Å的新发射带,其半高宽(FWHM)大于Cu-G谱带的半高宽。此外还得到,随着Cu浓度增加,Cu-G带与Cu-R带强度之比减小。文中指出,Ga浓度较低时,ZnSe:Ga,Cu晶体与ZnSe:Cu晶体有相同的Cu深中心发射规律,即随着Cu浓度增大,Cu-G带与Cu-R带的强度比增大,由Cu-R发射带占优势逐渐过渡到Cu-G发射带占优势。 相似文献
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本文用光学深能级瞬态谱(ODLTS)方法研究了ZnSe:Ga晶体中的自激活(SA)深受主能级。首次用ODLTS技术测量了ZnSe:Ga晶体中与SA中心相应的深受主能级为0.65eV。文中还研究了该深受主中心在晶体中的空间分布。 相似文献
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本文介绍用正电子湮没寿命和多普勒加宽技术研究750—950°掺Te液相外延生长的和1238℃熔体生长的GaAs晶体生长缺陷. 在800—1238℃生长的晶体中都观测到312±11ps的寿命组分τ2, 其强度I2, 多普勒加宽S参加和按捕获模型计算的平均寿命τ都随晶体生长温度增高而增大. 在掺Te外延晶体中, 312ps寿命的正电子陷阱浓度随晶体生长温度增高而线性地增大, 在熔体生长晶体中, 该陷阱浓度低得多, 远偏离以上线性关系. 312ps寿命归因于正电子在Ga空位湮没寿命, 结果显示出掺Te在GaAs晶体中诱导Ga空位. 相似文献
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在柔性聚酰亚胺衬底上低温制备Cu(In,Ga)Se2薄膜太阳能电池, Na的掺入会改善电池特性, 但不同的掺Na工艺对Cu(In,Ga)Se2薄膜和器件特性的改善机理不同. 本实验通过对比前掺NaF和后掺NaF工艺发现, 在前掺Na工艺下, 由于Na始终存在于Cu(In,Ga)Se2薄膜生长过程中, Na存在于多晶 Cu(In,Ga)Se2 薄膜晶界处, 起到了扩散势垒的作用, 导致晶粒细碎、加剧两相分离, 同时减小了施主缺陷的形成概率; 而在后掺Na工艺下, 掺入的Na对薄膜的结构及生长不产生影响, 仅仅起到了钝化施主缺陷、改善薄膜缺陷态的作用. 同时, 研究表明, 后掺Na工艺中, NaF必须依靠外界能量辅助才能扩散进Cu(In,Ga)Se2内部, 实验结果证实, 只有衬底温度达到350 ℃以上时, 掺入的NaF才能较好地改善薄膜特性. 最终经掺Na工艺的优化, 得到低温工艺制备的柔性聚酰亚胺衬底器件效率达10.4%. 相似文献
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Si掺杂对AlGaInP/GaInP多量子阱性能的影响 总被引:1,自引:1,他引:0
采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片。以X射线双晶衍射技术和光致发光技术对外延片进行了表征,研究了Si掺杂对AlGaInP/GaInP多量子阱性能的影响。研究表明:掺Si能大大提高(Al0.3Ga0.7)0.5In0.5P/Ga0.5In0.5P多量子阱的发光强度。相对于未故意掺杂的样品,多量子阱垒层掺Si使多量子阱的发光强度提高了13倍,阱层和垒层均掺Si使多量子阱的发光强度提高了28倍。外延片的X射线双晶衍射测试表明,Si掺杂并没有使多量子阱的界面质量变差。 相似文献
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采用等离子增强原子层沉积技术在低温下于单晶硅衬底上成功生长了Ga N多晶薄膜,利用椭圆偏振仪、低角度掠入射X射线衍射仪、X射线光电子能谱仪对薄膜样品的生长速率、晶体结构及薄膜成分进行了表征和分析.结果表明,等离子增强原子层沉积技术生长Ga N的温度窗口为210—270?C,薄膜在较高生长温度下呈多晶态,在较低温度下呈非晶态;薄膜中N元素与大部分Ga元素结合成N—Ga键生成Ga N,有少量的Ga元素以Ga—O键存在,多晶Ga N薄膜含有少量非晶态Ga_2O_3. 相似文献
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采用溶胶-凝胶工艺与原位生长技术,制备了ZnSe/SiO2复合薄膜.X射线衍射分析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1:1.01-1:1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌,结果表明复合薄膜表面既存在尺寸约为400nm的ZnSe晶粒,也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测量了薄膜椭偏角Ψ,Δ与波长λ的关系,采用Maxwell-Garnett有效介质理论对薄膜的光学常数、厚度、气孔率、ZnSe的浓度进行了数据拟合.利用荧光光谱分析了薄膜的光致发光,结果表明在波长为395nm的激发光下,487nm的发射峰对应着闪锌矿型ZnSe的带边发射,同时也观测到薄膜中ZnSe晶体增强的自由激子发射及伴随着ZnSe晶体缺陷而产生的辐射发光. 相似文献
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Curved streak patterns are clearly observed in the azimuth of [1 0 0] when the substrate temperature is heated up to 600°C, suggesting that the one-dimensional Li chains are stable. The growth rates of non-doped ZnSe on Li-doped ZnSe are found to be about 1/2 of that of non-doped ZnSe grown on GaAs. Even when no Li is supplied, the RHEED exhibits clear curved streak patterns. The results indicate that Li atoms segregate onto the topmost surface during the MBE growth, because of high diffusivity of Li, resulting in the formation of 1D array. 相似文献
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分子束外延ZnSe/GaAs材料的拉曼散射研究 总被引:4,自引:2,他引:2
用分子束外延(MBE)技术,在GaAa(100)衬底上生长了厚度从0.045μm到1.4μm的ZnSe薄膜。通过室温拉曼光谱的测量对ZnSe薄膜纵光学声子(Longitudinal-opticalphonon)的谱形进行了分析。用拉曼散射的空间相关模型定量分析了一级拉曼散射的型间相关长度与晶体质量之间的关系,结果表明ZnSe外延层的晶体质量随着外延层厚度的减薄是渐渐退化的,这是由于界面失配位错引入外延层所致,理论分析与实验结果相吻合。 相似文献
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气相外延ZnSe单晶薄膜的蓝色电致发光 总被引:1,自引:1,他引:0
本文在300℃—700℃温度范围内,在GaAs衬底上气相外延生长了ZnSe单晶薄膜。讨论了衬底温度对外延层电学性质及光学特性的影响。ZnSe外延层经Zn气氛热处理后,发光特性大为改善。用处理后的ZnSe外延膜做成MIS发光二极管,首次得到了室温下气相外延ZnSe单晶薄膜的蓝色电致发光。 相似文献
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The effect of the surface preparation of the GaAs(110) substrate on the ZnSe epitaxial layer grown by molecular beam epitaxy
(MBE) was investigated by means of etch-pit density (EPD) measurements, surface morphology observation, and reflection high-energy
electron diffraction (RHEED) analysis. The ZnSe epitaxial layer grown on a GaAs(110) surface prepared by cleaving the (001)-oriented
wafer in ultrahigh vacuum (UHV) showed about 5×104 cm-2 of EPD. This value is much lower than that observed from both the samples grown on the mechanically polished surface with
and without a GaAs buffer layer. Due to the non-stoichiometric surface after thermal evaporation of the surface oxide, three-dimensional
growth can easily occur on the mechanically polished GaAs(110) substrate. These results suggest that the stoichiometric and
atomically flat substrate surface is essential for the growth of low-defect ZnSe epitaxial layers on the GaAs(110) non-polar
surface.
Received: 21 August 1998 / Accepted: 19 October 1998 / Published online: 28 April 1999 相似文献
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窄阱ZnSe—ZnS应变多量子阱的制备和鉴定 总被引:1,自引:1,他引:0
本文报导了利用常压MOCVD法制备窄阱ZnSe•ZnS应变多量子阱的方法,经X射线衍射、光致发光(PL)及扫描电镜(SEM)实验测定表明,该结构具有较好的结晶质量,阱宽约为0.5nm。 相似文献
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ZnSe epilayers were grown on GaAs (1 0 0) substrates using MBE. The native contamination (oxide and carbon) was removed in situ from the substrate surfaces by conventional thermal cleaning and by exposure to atomic hydrogen. A maximum substrate temperature of 600 °C was required for the thermal cleaning process, while a substrate temperature of 450 °C was sufficient to clean the substrate using hydrogen. ZnSe epilayers were also grown on As capped GaAs epilayers, which were decapped at a maximum temperature of 350 °C. SIMS profiles showed the existence of oxygen at the interface for all of the substrate preparation methods. The oxygen surface coverage at the interface was found to be 0.03% for the atomic hydrogen cleaned substrate and 0.7% for the thermally cleaned substrate. 相似文献
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S. H. Park J. H. Chang M. Yang H. S. Ahn S. N. Yi K. Goto M. W. Cho T. Yao J. S. Song 《Current Applied Physics》2004,4(6):607-610
Photoluminescence (PL) linewidth broadening of CdxZn1 − xSe/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced. 相似文献