The trapping effect of sulfur sensitization center Ag<Subscript>2</Subscript>S cluster on T-grain AgBrI microcrystals

The microwave absorption dielectric-spectrum technique was used to study the decay kinetics of photoelectrons in sulfur-sensitized silver halide crystals. The time-resolution spectrum of free electrons and shallow-trapped electrons generated in sulfur-sensitized AgBrl crystals has been obtained. The relationship of the trapping effect of sensitization centers Ag₂S and sensitization time or temperature in emulsions has been duscussed. With the increase in the sensitization time and temperature, the trap effect of sulfur sensitization centers varies from hole trap to shallow electron trap, and deep electron trap.     

化学增感对光电子时间分辨谱的影响

利用微波吸收相敏检测技术,对AgBrI-T颗粒乳剂中光电子时间行为进行了检测,并获得了自由光电子与浅束缚光电子的时间分辨谱。实验结果表明,在加入Na₂S₂O₃相同的条件下S与S+Au增感中心所起的电子陷阱作用不同,S增感中心所起的作用为深电子陷阱,增感中心由于增加了对光电子的深束缚,从而造成自由光电子与浅束缚光电子的衰减加剧;S+Au增感中心所起的作用为浅电子陷阱,增感中心通过暂时束缚光电子有效降低了光电子与光空穴的复合,减缓了自由光电子与浅束缚光电子的衰减,可见加入KAuCl₄后形成的S+Au增感中心陷阱深度要比S增感中心的陷阱深度浅。从光电子时间分辨谱的变化可以看出S与S+Au增感中心在衰减曲线的不同时域中对光电子衰减的作用表现不同。     

掺杂的AgCl微晶在化学增感条件下的光电子衰减特性

利用微波吸收介电谱技术研究了K₄Fe(CN)₆浅电子陷阱掺杂剂和S+Au增感剂对立方体AgCl微晶光生电子衰减时间分辨特性的影响。结果表明,掺杂浓度为10-8～10-7 mol·mol-1Ag时,在增感之前,掺杂位置越接近表面时,光电子衰减过程会变慢,即衰减时间增加;S+Au增感后的掺杂乳剂中光电子衰减变快,说明了增感中心起深电子陷阱作用,当掺杂位置接近表面90%Ag时,光电子衰减时间突然减小,说明表面掺杂中心和增感中心可能发生了某些反应。     

S+Au增感中心的电子陷阱效应对光电子行为的影响

利用微波吸收相敏检测技术，对AgBrI-T颗粒乳剂中自由光电子与浅束缚光电子时间行为进行了检测，结果表明在一级衰减曲线的不同区域中增感中心对光电子衰减的作用表现不同；S+Au增感中心的电子陷阱效应随浓度的增加发生了由浅电子陷阱到深电子陷阱的转变.根据增感浓度与光电子衰减时间的对应关系，获得了S+Au最佳增感浓度. 关键词： 微波相敏检测 光电子 增感 电子陷阱     

不同增感对AgCl乳剂中光电子时间行为的影响

借助微波吸收介电谱检测技术,对AgCl立方体乳剂中光电子的时间行为进行了检测,同时获得了自由光电子与浅束缚光电子在不同增感条件下的时间分辨谱。实验结果表明：化学增感时由于硫加金增感中心的浅电子陷阱作用有效地抑制了空穴与光电子之间的复合,化学增感使得光电子的衰减相对未增感的减缓、衰减时间得到延长;光谱增感时由于染料J聚集体增加了卤化银晶体中添隙银离子的浓度、促进了光电子与添隙银离子之间的结合,光谱增感使得光电子的衰减相对未增感的加剧、衰减时间变短;化学与光谱共同增感使光电子的衰减时间在光谱增感的基础上得到了延长,且硫加金化学增感中心的浅电子陷阱效应在光谱增感的基础上更明显。     

Kinetics of Relaxation of Stored Light Sums in Silver Chloride

Experimental investigation of the time and temperature dependences of the process of relaxation of excited silver chloride has been carried out by the method of a photostimulated burst of luminescence. It is found that the relaxation process can be divided into two components, the rates of which differ by an order of magnitude. The activation energies of these processes of 0.03 and 0.06 eV correspond to the thermal ionization energies of electrons from shallow traps. Thermally activated relocalization of charges from shallow to deep traps in the process of relaxation has been revealed. The depth of a corresponding trap appeared equal to 0.17 eV. A model of a crystal phosphor has been suggested that contains five levels in the forbidden band: a hole center of recombination (luminescence), a deep electron trap, two shallow electron traps located at a depth of 0.03 and 0.06 eV from the bottom of the conductivity band, and a hole trap located at a height of 0.17 eV from the valence band top. Within the framework of this model, we can qualitatively explain the time and temperature dependences of stored light sums. We have shown the possibility of applying the method of a photostimulated burst of luminescence to investigation of the processes of relaxation of electron excitations in crystals to establish the relaxation mechanisms.     

Trap ionization in phosphors in a strong electric field

Temperature dependences of the intensity of Gudden-Pohl flashes in zinc sulfide crystals in various electric fields were measured in order to study trap ionization by electric fields. The decrease in the flash intensity from trap levels of a given depth in a certain temperature range is due to a decrease in the probability for the liberation of an electron from a trap as the temperature decreases. The temperature dependences of the flash intensity found in various electric fields are compared with the theoretical temperature dependence of the probability for electron liberation from a trap. The agreement between experimental and theoretical curves indicates that electrons are liberated from the deeper levels through ionization by an electric field involving many phonons.Translated from Izvestiya VUZ. Fizika, No. 10, pp. 53–58, October, 1969.     

Electron trapping properties at HfO_2/SiO_2 interface,studied by Kelvin probe force microscopy and theoretical analysis

Electron trapping properties at the HfO_2/SiO_2 interface have been measured through Kelvin Probe force microscopy,between room temperature and 90 ℃.The electron diffusion in HfO_2 shows a multiple-step process.After injection,electrons diffuse quickly toward the HfO_2/SiO_2 interface and then diffuse laterally near the interface in two sub-steps:The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through deep trap centers.Evolution of contact potential difference profile in the fast lateral diffusion sub-step was simulated by solving a diffusion equation with a term describing the charge loss.In this way,the diffusion coefficient and the average life time at different temperatures were extracted.A value of 0.57 eV was calculated for the activation energy of the shallow trap centers in HfO_2.     

Polarization detection of trapped electrons via interaction with polarized atoms

Electrons were trapped in an electrostatic quadrupole trap with superimposed homogeneous magnetic field. The electrons were polarized by spin exchange with a polarized atomic beam. The free trapped electron polarization was converted to a change in the electron translational energy via spin-dependent inelastic collisions with the atomic beam, and the electron translational temperature was monitored. Discussed are the development of this variation of the measurement technique, characteristics of electron storage, and the electron-polarized atom inelastic interaction as a function of electron temperature and time. The method has been applied to the detection of the (g-2) resonance of free, stored electrons.     

Time-resolved optical spectroscopy of CsI(Tl) crystals by pulsed electron beam irradiation

Properties of the color and emission centers induced with an electron pulse beam at temperature within 80-300 K have been studied in CsI(Tl) crystals. It has been established by optical spectrometry with time resolution that initial color centers in this crystal are only Tl⁰ and V_k centers, which spontaneously recombine emitting visible light at 2.25 and 2.55 eV. It has been shown that the emission decay kinetics at 80 K include two fast exponential components with decay constants 3 and 14 μs as well as slow hyperbolic component with the power index depending on the wavelength of the emitting light. The temperature effect on the emission kinetics has been studied and it has been directly proved that the emission rise stage at the temperature above 170 K is caused by the recombination of electrons, which are thermally released from single Tl⁰ centers, with V_kA centers. The origin of scintillations in CsI(Tl) crystal is discussed in terms of the tunnel electron transitions from ground state of Tl⁰ centers to ground state of V_k centers at different distances from each other.     

四光束对高能电子的捕获特性研究

依据非线性强场效应的基本原理,提出了一种四光束捕获电子的方案,旨在通过延长电子和强场相互作用时间来提高非线性过程发生的总概率,实现观测信号的增强。其基本原理是基于电子在强激光光束上的非弹性散射。数值模拟结果表明,捕获后的电子和中心光场的相互作用时间得到延长。     

Spin-dependent recombination in GaAsN solid solutions

Room-temperature spin-dependent recombination in a series of GaAs_1?xN_x solid solutions (x = 2.1, 2.7, 3.4%) has been observed as manifested by a more than threefold decrease in intensity of the edge photoluminescence upon switching from circular to linear polarization of the exciting light or upon the application of a transverse magnetic field (～300 G). The interband absorption of the circularly polarized light is accompanied by the spin polarization of conduction electrons, which reaches 35% with an increase in the pumping level. The observed effects are explained in terms of the dynamic polarization of deep paramagnetic centers and the spin-dependent trapping of conduction electrons on these centers. The electron spin relaxation time, as estimated from the dependence of the edge photoluminescence depolarization in the transverse magnetic field (the Hanle effect) on the pumping intensity, is on the order of 1 ns. According to the adopted theory, the electron spin relaxation time in the presence of spin-dependent recombination is determined by a slow spin relaxation of localized electrons. The sign (positive) of the g factor of localized electrons has been experimentally determined from the direction of the magnetic-field-induced rotation of their average spin observed in the three GaAsN crystals studied.     

Thin-film aggregate color centers as media for frequency domain optical storage

Thin films of aggregate color centers have been produced by electron and ion irradiation of bulk alkali halide crystals. The transverse spatial distribution of the centers was controlled on a submicron scale using electron lithography. Photochemical hole burning has been accomplished for the first time in a thin film of color centers, using the 6070 Å zero-phononN ₁ line produced by ion and electron irradiation of NaF crystals.     

Detection of defects binding free polarons in colored alkali halide crystals

The assumption has been made that defects binding free polarons in colored alkali halide crystals are F'-center, i.e., defects that slow down the motion of dislocations (photoplastic effect). This assumption has been confirmed by the experiments performed in this study. Thus, the anion vacancy in alkali halide crystals at a low temperature can capture three electrons: two electrons at a deep level (F'-center) and one electron in a bound polaron state. This electron is retained due to the energy gain in the interaction of a local deformation of the polaron and a local deformation surrounding the F'-center, despite the presence of the Coulomb repulsion.     

EPR investigation of local paramagnetic centers in perovskite-like crystals

In ScF₃ single crystals (pure and doped) as well as in Rb₂KScF₆ and Rb₂KDyF₆ crystals with a perovskite-like structure, point nanodefects (vacancy in place of trivalent cations) have been found and studied. Electron paramagnetic resonance has been used to investigate local paramagnetic centers that are not detected using X-ray diffraction. The angular dependence of the spectra indicates a local distortion of the cubic symmetry of the crystals. An additional hyperfine structure in the observed spectra is due to the delocalization of electrons over six F^? ions forming the first coordination polyhedron around the vacancy. The crystals studied are characterized by a high electron mobility and a high electron velocity, which depends on the impurity. The high mobility of electrons of the cation center can be indirectly responsible for the structural phase transition occurring in the ScF₃ crystal under uniaxial pressure.     

Exciton mechanism of energy transfer to F-centers in dosimetric corundum crystals

The optical absorption (OA) and thermoluminescence of oriented -Al₂O₃ crystals colored in aluminum vapor have been studied. Optical absorption measurements of an X-irradiated sample at the orientation EC₃ during isochronal annealing revealed mutual transformations of F- and F⁺-centers within the dosimetric peak from 380 to 500 K. The transformations occurred simultaneously with emptying of the electron trap whose OA is at 2.8 eV. The predominant F→F⁺ conversion, which could be explained by delocalization of holes, was observed in the low-temperature part of the peak near 380–440 K. From the available experimental data it was inferred that the simultaneous release of electrons and holes in the low-temperature part of the peak facilitated formation of excitons bound on F-type centers. The excitons transferred part of the energy stored in the irradiated crystal to F⁺- and F⁻-centers during thermal stimulation, leading to luminescence of these centers.     

Anomaly in electron channeling due to imperfections produced thermally in a potassium chloride crystal

Lattice imperfections were produced in KCl crystals by a thermal process. The heat treated specimen was irradiated with 50 KeV electrons and the corresponding range of electrons in the crystal has been estimated. It was found that the electron range in the crystal depends upon the temperature of heat treatment, being a decreasing function of this temperature up to about 625 K, above which it becomes an increasing function. This anomaly has been explained in terms of dissolution of vacancies through dislocation loops.     

Deep level transient spectroscopy measurement on tin-doped n-indium selenide

Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients.     

First stage f centre formation in pure and doped KCl crystals by room temperaure X-irradiation

The electrical conductivity and optical absorption of potassium chloride crystals, pure and doped with divalent cation impurities, have been measured before and after X-irradiation at room temperature. The concentration of free positive ion vacancies at room temperature has been calculated from conductivity for each crystal before irradiation and is found to be much less than the first stage F centre concentration. This shows that both free and associated positive ion vacancies are the latent source of F centres in the first stage colouration. Pb^{+ +} ions trap electrons producing Pb^{+ +} and Pb⁰ centres and making free the associated cation vacancies. Such centres are not produced in Ca-doped crystals where impurity-vacancy complexes trap F centres producing Z centres. The higher ratio of F centres to positive ion vacancies in Pb-doped crystals indicates that free cation vacancies are more effective in producing F centres. However, the concentration of divalent cations is found to decrease in both the crystals after irradiation, the decrease being more in Ca-doped crystals.The author is indebted to Prof. H. N. Bose for helpful discussions. Thanks are also due to Dr. M. L. Mukherjee for providing the crystals.     

Properties of n-type gallium arsenide doped with germanium when single crystals are grown from the melt

The temperature dependences of the density, mobility, and lifetime of electrons, and the photoconductivity and cathodoluminescence spectra of gallium arsenide with different electron densities doped with germanium when single crystals are grown by the Czochralski method are investigated. An analysis of the scattering mechanism is given, and the acceptor and donor densities are determined. The acceptor-type capture levels are found from the temperature dependence of the electron lifetime. The results of a study of the cathodoluminescence spectra indicate the presence in the specimens of complex radiational recombination centers similar to germanium-atom complexes with inherent lattice defects.