化学增感对光电子时间分辨谱的影响

利用微波吸收相敏检测技术,对AgBrI-T颗粒乳剂中光电子时间行为进行了检测,并获得了自由光电子与浅束缚光电子的时间分辨谱。实验结果表明,在加入Na₂S₂O₃相同的条件下S与S+Au增感中心所起的电子陷阱作用不同,S增感中心所起的作用为深电子陷阱,增感中心由于增加了对光电子的深束缚,从而造成自由光电子与浅束缚光电子的衰减加剧;S+Au增感中心所起的作用为浅电子陷阱,增感中心通过暂时束缚光电子有效降低了光电子与光空穴的复合,减缓了自由光电子与浅束缚光电子的衰减,可见加入KAuCl₄后形成的S+Au增感中心陷阱深度要比S增感中心的陷阱深度浅。从光电子时间分辨谱的变化可以看出S与S+Au增感中心在衰减曲线的不同时域中对光电子衰减的作用表现不同。     

掺杂的AgCl微晶在化学增感条件下的光电子衰减特性

利用微波吸收介电谱技术研究了K₄Fe(CN)₆浅电子陷阱掺杂剂和S+Au增感剂对立方体AgCl微晶光生电子衰减时间分辨特性的影响。结果表明,掺杂浓度为10-8～10-7 mol·mol-1Ag时,在增感之前,掺杂位置越接近表面时,光电子衰减过程会变慢,即衰减时间增加;S+Au增感后的掺杂乳剂中光电子衰减变快,说明了增感中心起深电子陷阱作用,当掺杂位置接近表面90%Ag时,光电子衰减时间突然减小,说明表面掺杂中心和增感中心可能发生了某些反应。     

不同增感对AgCl乳剂中光电子时间行为的影响

借助微波吸收介电谱检测技术,对AgCl立方体乳剂中光电子的时间行为进行了检测,同时获得了自由光电子与浅束缚光电子在不同增感条件下的时间分辨谱。实验结果表明：化学增感时由于硫加金增感中心的浅电子陷阱作用有效地抑制了空穴与光电子之间的复合,化学增感使得光电子的衰减相对未增感的减缓、衰减时间得到延长;光谱增感时由于染料J聚集体增加了卤化银晶体中添隙银离子的浓度、促进了光电子与添隙银离子之间的结合,光谱增感使得光电子的衰减相对未增感的加剧、衰减时间变短;化学与光谱共同增感使光电子的衰减时间在光谱增感的基础上得到了延长,且硫加金化学增感中心的浅电子陷阱效应在光谱增感的基础上更明显。     

纳米硫化镍增感的溴化银微晶中光电子衰减特性研究

利用微弱信号的微波吸收相敏检测技术, 获得了纳米硫化镍增感的立方体溴化银乳剂中, 在增感时间增加的条件下, 自由光电子和浅束缚光电子的时间衰减曲线.分析了采用纳米硫化镍进行增感的溴化银乳剂中光生电子随增感时间衰减的过程, 讨论了卤化银晶体中电子陷阱对光电子运动行为的影响, 分析了电子陷阱效应及陷阱深度同增感时间之间的关系. 通过未增感样品与增感样品的衰减曲线对比, 得到了在此实验条件下的最佳增感时间为80min. 关键词： 纳米硫化镍 衰减时间 电子陷阱 寿命     

摄影光学 感光材料与性能测试

TQ571.2 2006032396还原增感浓度对AgCl光电子衰减的影响=Influence ofsensitization concentration on photoelectron decay of AgClemulsion[刊,中]/李晓苇(河北大学物理科学与技术学院.河北,保定(071002)) ,张伟…∥河北大学学报(自然科学版) .—2006 ,26(2) .—148-151 ,156利用微波介电检测技术,测得自由光电子与浅束缚光电子衰减行为随还原增感浓度的变化。实验发现,还原增感浓度低时,增感中心起空穴陷阱作用;还原增感浓度高时,增感中心起深电子陷阱作用。根据光电子衰减行为随增感浓度的变化得到了最佳增感浓度。图4参10(严寒)TQ…     

感绿光谱增感染料在氯化银微晶表面的电子陷阱效应

光谱增感技术可使卤化银感光材料实现对全波段感光，同时光谱增感技术在现代光信息记录与存储、光电器件、太阳能转换与存储等领域具有重要的应用.应用微波吸收介电谱技术研究了立方体氯化银吸附感绿菁染料后的光电子衰减特性，建立了氯化银光电子衰减动力学模型，根据此模型结合光电子衰减实验结果对光谱增感染料吸附在卤化银表面的电子陷阱效应进行了分析.研究结果表明：当染料以单分子态吸附在卤化银表面时，染料起浅电子陷阱效应；染料以J聚集体吸附在卤化银表面时，染料起到了深电子陷阱效应.浅电子陷阱与深电子陷阱效应的临界浓度为每40g 关键词： 感绿染料 氯化银 光电子衰减 电子陷阱效应     

甲酸根离子掺杂的AgCl乳剂增感后的光电子特性研究

甲酸根离子作为一种“空穴－电子转换剂”掺杂在卤化银中可以提高潜影形成过程中光电子的利用率。将不同位置甲酸根离子掺杂的立方体AgCl乳剂又经相同条件的硫加金或感绿染料增感后，采用微波吸收介电谱检测技术对样品在脉冲激光作用下所产生的光电子衰减信号进行检测，通过分析光电子的衰减特性，发现甲酸根离子仍然能发挥其空穴陷阱效应，而且自由光电子的衰减时间和寿命与未增感的掺杂乳剂随掺杂位置的变化趋势一致。     

卤化银微晶中光电子衰减谱的特性

光电子在卤化银材料潜影形成过程中发挥着重要的作用 ,光电子衰减行为在很大程度上决定于卤化银的晶体结构。采用光学与微波双共振技术 ,测量了自由光电子和浅俘获光电子的衰减谱 ,得到了卤化银中电子陷阱的密度和深度分布。以自由光电子寿命为纽带 ,通过分析掺杂卤化银晶体中电子陷阱的分布情况 ,可以确定浅电子陷阱掺杂剂的最佳掺杂浓度。     

摄影光学 感光材料与性能测试

TQ571.22006054453纳米硫化镍增感的溴化银微晶中光电子衰减特性研究=Investigation of decay characteristics of photoelectrons innanoparticals of cubic AgBr sensitized by NiS[刊,中]/杨少鹏(河北大学物理科学与技术学院.河北,保定(071002)),郑红芳…//物理学报.—2006,55(5).—2144-2148利用微弱信号的微波吸收相敏检测技术,获得了纳米硫化镍增感的立方体溴化银乳剂中,在增感时间增加的条件下,自由光电子和浅束缚光电子的时间衰减曲线。分析了采用纳米硫化镍进行增感的溴化银乳剂中光生电子随增感时间衰减的过程,讨论了卤化银晶…     

ZnS中电子陷阱能级对光生电子弛豫过程的影响

采用微波吸收法,测量了在不同助熔剂条件及不同气氛下烧制的ZnS材料受到超短激光脉冲激发后的光电子衰减过程,并且测量了材料的热释光曲线。样品A采用过量的SrCl作为助熔剂,在1150℃下灼烧制备而成;其热释光曲线显示材料中有浅电子陷阱,电子陷阱密度小,光生电子衰减过程为双指数衰减过程,快过程寿命为45ns,慢过程寿命为312ns。样品B中加入了少量的NaCl作为助熔剂;热释光曲线显示有浅电子陷阱和深电子陷阱,且都有较高的密度,其光电子寿命为1615ns。在NH₄Br气氛中烧制样品C,热释光谱显示只有浅电子陷阱形成,光电子寿命为1413ns。结果表明材料的光电子寿命和浅电子陷阱密切相关,浅电子陷阱密度越大,光生电子寿命越长,深电子陷阱对光生电子瞬态过程影响很小。     

The trapping effect of sulfur sensitization center Ag_2S cluster on T-grain AgBrI microcrystals

Chemical sensitization is a widely adopted technique that improves the photo-graphic sensitivity of silver halide crystals with basic emulsion. Sensitization centers,which can save photoelectrons in the process of latent-image formation, have beenformed on microcrystals after chemical sensitization. Therefore, chemical sensitizationwas widely adopted for many years. Sulfur sensitization is an important chemical sen-sitization technique in all chemical sensitization methods. First, in 1925, Sh…     

The trapping effect of sulfur sensitization center Ag<Subscript>2</Subscript>S cluster on T-grain AgBrI microcrystals

The microwave absorption dielectric-spectrum technique was used to study the decay kinetics of photoelectrons in sulfur-sensitized silver halide crystals. The time-resolution spectrum of free electrons and shallow-trapped electrons generated in sulfur-sensitized AgBrl crystals has been obtained. The relationship of the trapping effect of sensitization centers Ag₂S and sensitization time or temperature in emulsions has been duscussed. With the increase in the sensitization time and temperature, the trap effect of sulfur sensitization centers varies from hole trap to shallow electron trap, and deep electron trap.     

Effect of high-dose irradiation on the optically stimulated luminescence of Al2O3:C

This paper examines the effect of high-dose irradiation on the optically stimulated luminescence (OSL) of Al2O3:C, principally on the shape of the OSL decay curve and on the OSL sensitivity. The effect of the degree of deep trap filling on the OSL was also studied by monitoring the sensitivity changes after doses of beta irradiation and after step-annealing of samples previously irradiated with high doses. The OSL response to dose shows a linear-supralinear-saturation behavior, with a decrease in the response for doses higher than those required for saturation. This behavior correlates with the sensitivity changes observed in the samples annealed only to 773 K, which show sensitization for doses up to 20-50 Gy and desensitization for higher doses. Data from the step-annealing study leads to the suggestion that the sensitization is caused by the filling of deep electron traps, which become thermally unstable at 1100-1200 K, whereas the desensitization is caused by the filling of deep hole traps, which become thermally unstable at 800-875 K, along with a concomitant decrease in the concentration of recombination centers (F+ -centers). Changes in the shape of the OSL decay curves are also observed at high doses, the decay becoming faster as the dose increases. These changes in the OSL decay curves are discussed in terms of multiple overlapping components, each characterized by different photoionization cross-sections. However, using numerical solutions of the rate equations for a simple model consisting of a main trap and a recombination center, it is shown that the kinetics of OSL process may also be partially responsible for the changes in the OSL curves at high doses in Al2O3:C. Finally, the implication of these results for the dosimetry of heavy charged particles is discussed.     

Yb3+,Er3+掺杂的SrAl2O4:Eu2+,Dy3+长余辉材料的发光特性

根据Dorenbos能级模型的推论,利用掺杂Yb3+和Er3+对典型的长余辉材料SrAl2O4:Eu2+,Dy3+(简称SAO:ED)的发光特性(发光强度和余辉时间)进行调制.在发光特性分析中,发展并使用了一种简便易行的解析模型,而不是常用的多项e指数衰减函数的经验模型.研究发现,正如Dorenbos所预言的,Yb+3...     

Scintillation kinetics and thermoluminescence of SrI2:Eu2+ single crystals

Single crystal of strontium iodide doped with 1% europium (SrI₂:1% Eu²⁺) was grown by Vertical Gradient Freeze technique. UV excited emission spectra were studied as a function of temperature. Results indicate the thermal quenching of Eu²⁺ emission starts from ～400 K with a thermal activation energy of 0.39 eV. Gamma and UV excited decay measurements indicate that the scintillation decay time of SrI₂:Eu²⁺ is longer than the lifetime of Eu²⁺ luminescence center in the SrI₂ host. The thermoluminescence glow curve revealed a highly concentrated charge carrier trap at 50 K. Elimination of this trap is expected to enhance the energy migration of charge carriers and result in faster scintillation decay.     

Brownian diffusion of gold nanoparticles in an optical trap studied by fluorescence correlation spectroscopy

The effect of thermal-induced Brownian motion on gold nanoparticles (Au NPs) in optical traps is studied by fluorescence correlation spectroscopy (FCS) method. The Brownian motion and optical trapping potential are investigated by the decay time of the FCS curve and the laser power. It is shown that that the probability of finding a gold nanoparticle in the trap depends on the ratio of the optical energy of the particle to its thermal energy. A power threshold is observed by the decay time as a function of laser power. The experimental studies show that the temperature rise does not seriously affect the average number of particles in the focal spot, but the average residence time is more sensitively affected by the temperature.     

蓝色长余辉材料CaAl_2O_4∶Eu~(2+),Li~+的发光性质

采用高温固相法制备了CaAl_2O_4∶Eu~(2+),Li~+发光材料,并讨论了掺杂Li+对CaAl_2O_4∶Eu~(2+)发光性质的影响。X射线衍射(XRD)和PL测试分析表明,在CaAl_2O_4∶Eu~(2+)中掺入Li~+后,Eu~(2+)的发光有一定的增强,而余辉时间则延长了4倍左右。通过热释光谱测量,分析了其陷阱能级的数量并估算了陷阱能级深度。结果表明,掺杂Li~+会在发光离子周围产生更多的电子陷阱,使陷阱的密度和深度增加,从而提高荧光粉的余辉性能。