Spin-dependent electron dynamics and recombination in GaAs<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> alloys at room temperature

Conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs_1−x N _x alloys with a small nitrogen content (x = 2.1, 2.7, and 3.4%) is studied both experimentally and theoretically. It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40–45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ≈ 150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in the dynamical polarization of bound electrons. A nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers has been developed which describes the experimental dependencies, in particular, the electron spin quantum beats observed in a transverse magnetic field. The text was submitted by the authors in English.     

Estimate of the Degree of the Spin Polarization of a Ferromagnet from Data on the Superconductor/Ferromagnet Proximity Effect

The superconductor/ferromagnet proximity effect in the Pb/Co₂Cr_1–xFe _x Al bilayer systems has been studied. Thin films of the Heusler alloy Co₂Cr_1–xFe _x Al have been prepared at different substrate temperatures. It has been established using Andreev spectroscopy of point contacts that the degree of spin polarization of conduction electrons in the Heusler alloy is on the order of 30 and 70% for the films prepared at a substrate temperature of 300 and 600 K, respectively. It has been found that the dependence of the superconducting transition temperature on the thickness of the Pb layer at a fixed thickness of the Heusler layer is determined by the degree of spin polarization of the conduction band in the ferromagnetic layer.     

Spin-dependent recombination and optical spin orientation in semiconductors

Spin-dependent recombination is observed in Ga_0.6Al_0.4As at 77°K on the intensity of the donor-acceptor pairs photoluminescence. The lifetime is enhanced by a factor 2.3 when photocreated electrons and recombination centers are spin polarized by optical pumping with circularly polarized light. Optical orientation and spin-dependent recombination lead to a steady-state electronic spin polarization as large as 70%.     

Negatively charged excitons in semimagnetic CdSe/ZnSe/ZnMnSe quantum dots

Low-temperature (T = 1.6 K) photoluminescence (PL) of individual CdSe/ZnSe/ZnMnSe quantum dots (QDs) with different magnitudes of the sp-d exchange interaction between the magnetic impurity ions and charge carriers has been studied in a magnetic field up to 12 T applied in the Faraday and Voigt geometry. The magnitude of the interaction was controlled by changing the fraction (η_{e, h}) of the squared wave function of charge carriers in the semimagnetic barrier by means of variation of the nonmagnetic (ZnSe) layer thickness. It is established that the sp-d exchange interaction leads to a change in the sign of the effective hole g factor even for η_{e, h} ～ 5%, while further increase in the interaction magnitude is accompanied by a rapid growth in the magnitude of spin splitting for both electrons and holes. The quantum yield of PL exhibits a significant decrease due to nonradiative Auger recombination with the excitation of Mn ions only for η_{e, h} ～ 12%, while the rate of the holes spin relaxation starts growing only for still higher η_{e, h} values. In a strong magnetic field perpendicular to the sample plane, the alignment of Mn spins leads to suppression of the Auger recombination only in the excited spin state. For a small rate of the hole spin relaxation, this leads to a rather unusual result: the emission from an excited trion state predominates in strong magnetic fields.     

Effect of spin structures and nesting on the shape of the fermi surface and pseudogap anisotropy in the <Emphasis Type="Italic">t</Emphasis>-<Emphasis Type="Italic">t</Emphasis>′-<Emphasis Type="Italic">U</Emphasis> Hubbard models

The effect of two types of spin structures on the shape of the Fermi surface and on the map of photoemission intensities for the t-t′-U Hubbard model is investigated. The stripe phase with a period of 8α and the spiral spin structure are calculated in the mean field approximation. It is shown that, in contrast to electron-type doping, hole-doped models are unstable to the formation of such structures. Pseudogap anisotropy is different for h-and e-doping and is determined by the spin structure. In accordance with ARPES data for La_2?xSr_xCuO₄, the stripe phase is characterized by quasi-one-dimensional FS segments in the vicinity of points M(±π, 0) and by suppression of the spectral density for k _x =k _y . It is shown that spiral structures exhibit polarization anisotropy: different segments of the FS correspond to electrons with different spin polarizations.     

Investigating the spectra of electron spin resonance in SiGe/Si heterolayers doped with phosphorous

Studies of the spin resonance spectra of electrons localized on donors and the conduction electrons in Si_{1 ? x} Ge _x layers grown on silicon show that the phosphorous atoms in a SiGe layer can have two positions in the lattice. The line with g ～ 1.998 refers to the electron localized in the phosphorous atom with a predominantly silicon environment; the line with g ～ 1.994 is observed when there is a substantial concentration of germanium in the phosphorous environment.     

Spectroscopy of charge transfer states in Mg<Subscript>1 – <Emphasis Type="Italic">x</Emphasis> </Subscript>Ni<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>O

Photoluminescence and photoluminescence excitation spectra of solid solution Mg_1–xNi_xO (x = 0.008) have been analyzed. The contributions of charge transfer electronic states and nonradiative Auger relaxation to the formation of the photoluminescence spectrum are discussed.     

Coherent electron-hole BCS state: Study of dynamics

The first experimental study of the evolution of a coherent electron-hole (e-h) BCS-like state in bulk GaAs at room temperature is presented. We explicitly demonstrate that the total spontaneous emission from e-h pairs located within the conduction and valence bands approaches zero when the radiative recombination of the e-h BCS state occurs. This confirms that a vast majority of electrons and holes available are condensed at the very bottoms of the bands and form the BCS state. The average lifetime of this state is measured to be around 300 fs. We also show that the coherence of electrons and holes of the BCS state is preserved for a much longer time compared to the intraband relaxation time T₂.     

Evolution of the optical properties of DyNi<Subscript>5 − <Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> compounds in dependence of aluminum concentration

The refractive (n) and absorption (k) indices of intermetallic DyNi_{5 ? x} Al _x compounds (x = 0, 0.5, 1, 1.5, 2) have been measured by ellipsometry at room temperature in the spectral range of 0.22–15 μm. It is established that the replacement of nickel by aluminum atoms leads to significant changes in the dispersion relations of the optical conductivity σ(E) in the interband absorption range. With an increase in Al content, the spectrum σ(E) (containing three maxima for DyNi₅) is gradually transformed into a single-peak structure. The results obtained are discussed on the basis of the data on the electronic spectrum of these compounds. Concentration dependences of the plasma and relaxation frequencies of conduction electrons are determined.     

Specific features of the behavior of the optical properties of TbNi<Subscript>5 − <Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> intermetallic compounds

The optical properties of the TbNi_{5 ? x} Cu _x intermetallic compounds have been investigated in the spectral range 0.08–5.64 eV by the ellipsometric method. It is shown that substitution of nickel for copper atoms leads to a significant change in the frequency dependence of the optical conductivity; this change is related to modification of the electronic spectrum. The formation of a new interband absorption band has been revealed, whose intensity increases with an increase in the copper content. The concentration dependences of the plasma and relaxation frequencies of conduction electrons in the compounds under study are determined. Self-consistent calculation of the electronic structure of the TbNi₅ binary compound has been performed in the approximation of local electron spin density. The electron density of states for two spin projections and the optical conductivity of this compound have been calculated.     

Zur Bestimmung der Spin-Polarisation aus Transparenz-Messungen beim Optischen Pumpen

A simple method of measuring the degree of polarization achieved by optical pumping has been described recently for the case of sodium vapor, illuminated with the single circularly polarizedD ₁ line. The assumption had to be made, however, that the atomic absorption cross sectionQ, depending on the degree of polarizationP and the frequency of lightν, may be approximated byQ(P, ν)=(1?P)·Q(P=O,ν). The purpose of this paper is to discuss the qualification of this assumption. A theoretical analysis of the pumping process is tried, showing that the measured polarization corresponds in good approximation to the degree of the valence electron spin polarization. — For the case of weak absorption and equal intensity of the two hyperfine components of theD ₁ line a diagramm is given, relating the measured polarization to the polarization of the nuclear spin.     

Spin physics at HERMES

The primary goal of the HERMES experiment is the study of the spin structure of the nucleon. Results on the measured inclusive and semi-inclusive hadron asymmetries using a polarized positron beam on polarized ³He, hydrogen and deuterium targets are here presented. In the covered kinematic range, 0.023<x _Bj <0.6 and 1 GeV²<Q ²<10GeV² the polarized quark distribution were determined for all up (u+?u) and down (d+?) quarks, and separately for valence and sea quarks. The up quark polarization is positive, and the down quark polarization is negative. The polarization of the sea is consistent with zero in the measured range. A first indication of a positive gluon polarization is presented, based on the measured spin asymmetry in the photo-production of hadron pairs with high transverse momentum p _T . This asymmetry is negative, which is in contrast to the measured positive asymmetry for inclusive experiments.     

Lattice instability induced by 3<Emphasis Type="Italic">d</Emphasis> impurities in II–VI compound semiconductors

Nickel-impurity-induced transverse displacements of ions in a Zn_1?xNi_xSe lattice (x = 0.0025) were detected. This type of displacement correlates with macroscopic distortions of a crystal associated with transverse ultrasonic waves that are propagated along the 〈110〉 direction. The shear instability is assumed to be due to the hybridization of the sp³ bonds with the 3d states of the impurity centers.     

Die Bestimmung der Spin-Polarisation aus Transparenz-Änderungen beim Optischen Pumpen mit der Natrium-D1-Linie

A Dehmelt type experiment is performed in which sodium vapor and argon as a buffer are employed. The pumping radiation consists of the circularly polarizedD ₁ line. Since the strongly absorbing magnetic sublevels are depopulated, the vapor becomes more transparent to the pumping radiation with growing polarization. The transparency of the vapor is measured with and without optical pumping as a function of the sodium vapor density. The degree of polarization is determined in simulating the increase in transparency due to polarization by decreasing the sodium vapor density of the unpumped sample. This method requires the knowledge of the exact sodium vapor density in the temperature range of interest (100 to 200° C). The determination of the degree of polarization is based on the assumption, that the atomic absorption cross sectionQ, which depends on the degree of polarizationP and the frequency of lightν, can be written in the formQ(P,ν)=A(P) · B(ν), whereA(P) is a linear function ofP, whileB (ν) must not be changed by optical pumping. As will be shown in a following paper, the degree of polarization determined under this assumptions, describes in good approximation the polarization of the sodium valence electrons.     

Interrelationship between the polarization moments of different parity upon optical pumping of atoms under the magnetic resonance conditions: I. Experiment on the <Superscript>133</Superscript>Cs and <Superscript>4</Superscript>He atoms

In an experiment with an optical pumping of ¹³³Cs atoms in the 6² S _1/2 ground state, the line shape of the D ^2f magnetic resonance signal for the transverse alignment component oscillating at a double frequency f of a radio-frequency (RF) magnetic field is found to strongly depend on the polarization of pumping radiation. On passage from a linearly polarized pumping light to a circularly polarized (CP) light with a sufficiently strong RF field the ordinary three-peak line with the highest central peak transforms into a two-peak line with a minimum at the center, so that the D ^2f signal line resembles the M ^f signal line of a transverse orientation oscillating at the RF field frequency f. This suggests that the orientation (the first-rank polarization moment (PM)) arising upon CP pumping affects the alignment (the second-rank PM); i.e., the PMs of Cs atoms with different parities of their ranks become coupled. No influence of the polarization of a pumping radiation on the line shape of the D ^2f signal is observed in a similar experiment with the ⁴He atoms in the 2³ S ₁ metastable state.     

Nonlinear electric and thermoelectric Andreev transport through a hybrid quantum dot coupled to ferromagnetic and superconducting leads

We discuss the nonlinear Andreev current of an interacting quantum dot coupled to spin-polarized and superconducting reservoirs when voltage and temperature biases are applied across the nanostructure. Due to the particle-hole symmetry introduced by the superconducting (S) lead, the subgap spin current vanishes identically. Nevertheless, the Andreev charge current depends on the degree of polarization in the ferromagnetic (F) contact since the shift of electrostatic internal potential of the conductor depends on spin orientation of the charge carrier. This spin-dependent potential shift characterizes nonlinear responses in our device. We show how the subgap current versus the bias voltage or temperature difference depends on the lead polarization in two cases, namely (i) S-dominant case, when the dot-superconductor tunneling rate (Γ _R ) is much higher than the ferromagnet-dot tunnel coupling (Γ _L ), and (ii) F-dominant case, when Γ _L ? Γ _R . For the ferromagnetic dominant case the spin-dependent potential shows a nonmonotonic behavior as the dot level is detuned. Thus the subgap current can also exhibit interesting behaviors such as current rectification and the maximization of thermocurrents with smaller thermal biases when the lead polarization and the quantum dot level are adjusted.     

ESR-Linienbreite der Ionen der Eisengruppe in Lösungen

Electron spin resonance linewidths of ions belonging to the first transition group with quenched orbital angular momentum are calculated using a modified relaxationmatrix theory including third and fourth order perturbation terms. We base our calculation on a Hamiltonian, which depends on electron spin, nuclear spin, orbital angular momentum, rotation of the whole complex, and vibration of the ligands. Quadrupol effects, intermolecular electron-electron and electron-nucleus interactions are neglected. The results show that the well-known formula of the transverse relaxation time derived by using the spin-Hamiltonian is correct, if first the contribution of the rotational spin orbit process is taken in consideration and second the rotational correlation timeτ _c is replaced byτ _v =(1/τ _c +1/τ(0))^?1. 1/τ(0) describes the linewidth of the lowest energy value of the electrostatic energy of unpaired electrons in the ligand field. The linewidth arises from the normal modes of the complex; the calculation gives τ(0)=l0^?11...10^?12 sec.     

Observation of electric polarization in Gd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript>x</Subscript>MnO<Subscript>3</Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0.5, 0.6, 0.7) single crystals

In Gd_1?xSr_xMnO₃ (x = 0.5, 0.6, 0.7) single crystals, a change in electric polarization (ΔP ～ 100 μK/m²) is found to accompany the suppression of the charge-ordered spin-glass state and the transition to the ferromagnetic conducting phase (H_cr ～ 100 kOe at 4.5 K). The transition is also characterized by jumps in magnetization and magnetostriction. The sign of the induced polarization depends on the polarity of the electric field in which the sample was preliminarily cooled. This dependence testifies to the presence of spontaneous electric polarization in the system. The effect is maximal at x = 0.5 and decreases by more than an order of magnitude as x increases to 0.7. The phenomenon observed in the experiment may be associated with the new noncentrosymmetric structures with an electric dipole moment that were recently predicted for manganites (x ～ 0.5) [Nature Materials 3, 853 (2004)]. These structures exhibit charge-orbital ordering such that e _g electrons are not localized by one of the manganese ions but distributed between neighboring ions, thus forming an ordered dimer structure.     

Dipolar Biexcitons in Lateral Traps in Si/SiGe/Si Heterostructures

Si/Si_1–xGe_x/Si heterostructures with large-scale (micrometer-size) lateral potential fluctuations at the upper SiGe/Si-cap heterointerface are grown. These potential fluctuations are caused by partial strain relaxation in the SiGe layer. Low-temperature photoluminescence (PL) spectra show that these fluctuations form lateral traps where photoexcited nonequilibrium charge carriers are accumulated and bind into dipolar excitons, which ultimately recombine. At temperatures below 6 K, a new narrow line with a width considerably less than that of the dipolar exciton PL line emerges in the spectra as the level of excitation increases. It is shown that this line is associated with the recombination of dipolar biexcitons in large-scale traps.