S+Au增感中心的电子陷阱效应对光电子行为的影响

利用微波吸收相敏检测技术，对AgBrI-T颗粒乳剂中自由光电子与浅束缚光电子时间行为进行了检测，结果表明在一级衰减曲线的不同区域中增感中心对光电子衰减的作用表现不同；S+Au增感中心的电子陷阱效应随浓度的增加发生了由浅电子陷阱到深电子陷阱的转变.根据增感浓度与光电子衰减时间的对应关系，获得了S+Au最佳增感浓度. 关键词： 微波相敏检测 光电子 增感 电子陷阱

The electron trap effect of the sulfur + gold sensitization center on the photoelectron behaviors

The temporal behavior of free photoelectrons and shallow-trapped electrons in the T grains AgBrI emulsion was detected with the microwave absorption and dielectric spectrum detection technique. The results indicate that the effect of sensitization center on the photoelectron decay differs in different time ranges of the first-order decay curves, and that the electron trap effects of sulfur+gold sensitization center change from shallow trap to deep trap with increasing sensitization density. The optimal sensitization density of sulfur+gold was obtained on the basis of the relationship between the sensitization density and the decay time.