周期极化LiNbO3晶体中电极布置对反转畴扩张的影响

利用外加电场极化的方法,分别研究了三种不同方式布置的极化电极对C向切割LiNbO3晶体极化反转畴扩张的影响.实验结果表明在相同极化条件下,当极化电极长度方向与六边形反转畴一对边呈90°和0°角时,极化扩张速度分别为0.089μm/ms和0.011μm/ms.实验结果揭示,为了有效地控制极化占空比,在制备一维准相位匹配LiNbO3晶体时应避免极化电极与六边形反转畴壁中一对边呈90°的情况.     

外加电场法制备LiNbO3周期畴的反转电流特性研究

采用外加电场法制备了LiNbO₃单晶周期畴结构. 在对不同尺寸周期畴的反转电流进行比较研究的基础上,提出了一种确定反转畴成核时间和纵向贯穿速率的方法. 根据这一方法,得到在电场强度为25.1kV/mm,脉冲宽度为50 ms的脉冲方波作用下,LiNbO₃单晶反转畴的成核时间约为80ns,纵向贯穿速率约为0.1667m/s. 关键词： 3单晶周期极化')" href="#">LiNbO₃单晶周期极化 反转电流 反转畴成核时间 反转畴纵向贯穿速率     

准相位匹配周期极化钼酸钆制备及倍频效应

根据准相位匹配原理，对钼酸钆晶体用于准相位匹配倍频过程的周期性畴结构进行了设计，当入射基频光为l.064pm时，所需的钼酸钆晶体畴结构周期为5．54μm。利用外电场极化，当外电场为2．5kV／mm时，钼酸钆晶体的畴结构反转时间tc=500～600μs。当外电场脉冲幅值为2．5kV／mm、脉冲延续时间t=0．6～0．8tc时，在钼酸钆晶体中制备得到了周期畴结构。当Nd：YAG纳秒激光器输出准连续功率为7～10mW的l.064μm激光通过具有周期畴结构的样品时，获得了0．532μm的倍频光输出。     

二维LiNbO3非线性光子晶体

制备了周期为13.64 μm方形格子二维周期性极化的LiNbO₃，利用二阶准相位匹 配实现了波长为1.064μm二倍频，二次谐波的内部转换效率高达42％. 测量了二次谐波输出功率随晶体温度及入射光入射方向的变化，实验值与模拟计算一致. 制备二阶准相位匹配掩模板，解决了在制备一阶准相位匹配掩模板中遇到周期尺寸太小、数据量大的难题，同时还降低了因周期太小造成的极化难度. 关键词： 二维 准相位匹配 二次谐波     

外加电场极化法制备LiNbO3周期性畴反转的工艺研究

对用外加电场极化法实现铁电畴周期性极化反转LiNbO3晶体（PPLN）的工艺进行了研究,首先采用光刻工艺技术在Z切厚度为0．5mm的LiNbO3晶体的正畴面和负畴面上刻蚀出与掩膜板完全对应的金属Al电极,然后在两极上施加一系列的脉冲电压;在实验研究中,通过控制脉冲幅度,脉冲宽度,脉冲个数和脉冲电流,确定了最佳实验参量,并成功地制备出周期为9．5um的三阶准相位匹配铁电畴周期性极化反转LiNbO3晶体。     

周期极化掺镁不同组分LiNbO3晶体的研究

利用气相平衡扩散法研制出掺镁不同组分的LiNbO₃晶体，并对其极化特性进行了研究.研究表明晶体的开关电场和自发极化不仅与晶体组分［Li］/［Nb］比有关而且与掺镁量有关，［Li］/［Nb］比为0.973掺入2mol% MgO的近化学比LiNbO₃晶体的开关电场仅为1.8kV/mm，是同成分晶体的1/12，且其极化结构的质量要远好于同成分LiNbO₃晶体和近化学比LiNbO₃晶体. 关键词： 气相平衡扩散 3晶体')" href="#">掺镁LiNbO₃晶体 周期极化     

掺镁铌酸锂晶体亚微米畴结构特性研究

基于畴背向反转效应，利用外加短脉冲极化电场，通过对脉冲宽度、脉冲间隔以及脉冲个数的有效控制，在掺5mol％镁的铌酸锂晶体上得到周期为1.7μm的均匀亚微米畴结构，其纵向深度为30—50μm.同时，使用脉冲宽度为100ms的宽脉冲信号得到了畴带宽度仅为0.5μm的非对称微畴结构对亚微米畴结构产生的微观机制和物理过程进行了初步探讨. 关键词： 背向反转效应 掺镁铌酸锂晶体 周期极化     

利用数字全息干涉术观察RuO2:LiNbO3晶体中畴反转的区域特性

利用马赫-曾德尔干涉光路和4f光学透镜系统，以部分畴反转的掺钌铌酸锂晶体(RuO₂:LiNbO₃)的透射光作为物光来记录全息图，并在数值再现过程对其进行频域滤波以实现物场波前信息的数值重建，检测出在一定电压作用下晶体内部折射率变化的二维分布.检测结果证实：晶体中发生畴反转的区域与发生电色效应的区域严格相符.数字全息干涉术非接触、无干扰、无破坏的优势在准实时监控、检测和分析铌酸锂晶体畴反转方面有很好的应用前景. 关键词： 畴反转 数字全息干涉术 电色效应     

聚片多畴LiNbO3晶体的倍频效应

通过对聚片多畴LiNbO₃晶体倍频效应的研究,从实验上对Bloembergen等人所提出的准位相匹配理论进行了细致的检验。首先运用Maker条纹法在实验上直接测定了单畴LiNbO₃晶体在e^ω·e^ω→e^2ω非位相匹配下的倍频光强,并采用角度扫描和温度扫描方法,以获得满足准位相匹配条件时的不同片数的聚片多畴晶体的最大倍频强度,从而验证了聚片多畴晶体倍频相对光强与片畴数N成平方关系。在N<200时,取得 关键词：     

高掺镁铌酸锂晶体的生长和倍频性能

我们通过测定MgO在同成分LiNbO₃中的有效分凝系数、相位匹配温度与MgO浓度之间的关系,找到了使Mg:LiNbO₃晶体的相位匹配温度达到最高的掺MgO配方,并克服了Mg:LiNbO₃晶体在高掺杂生长时易出现生长条纹和脱溶等问题,从而生长出了抗光折变能力强,光学均匀性良好的Mg:LiNbO₃晶体。用于连续泵浦Nd:YAG声-光调Q腔内倍频时,获得了平均功率最高达2瓦的二次谐波输出。 关键词：     

Quasi-phase-matched frequency conversion in KNbO3 structures consisting of 90° ferroelectric domains

Periodic 90° domain structure with 18.6 μm periodicity was fabricated by applying a 200 V/mm electric field over (1̄01)-cut KNbO₃ plate. The blue light generation by quasi-phase-matched frequency doubling in this periodic 90° domain structure is demonstrated. The 90° domain structure completely compensates for a Poynting vector walk-off of the second-harmonic beam. Moreover, these structures exhibit amphoteric Poynting vector refraction properties, i.e., the refraction can be negative or positive depending on the angle of incidence at the 90° domain boundary. PACS 42.65.ky; 42.70.Mp; 77.80.Dj     

(Pb0.85Sm0.10)(Ti0.98Mn0.02)O3压电陶瓷超高各向异性机电耦合性能的X射线衍射研究

本文用X射线衍射技术研究了具有典型超高各向异性机电耦合性能的Sm改性PbTiO₃压电陶瓷。通过引入面网取向密度指数ρ_(hkl)和建立90°电畴转向畴壁平移模型,就改性PbTiO₃陶瓷圆片经不同电压极化后材料内部电畴结构变化作了定量的分析与讨论。结果表明,在改性PbTiO₃陶瓷结构中,90°畴壁空间取向分布具有高度的择优性;极化处理使材料中90°电畴壁显著平移,但其取向分布变化甚少;材料的纵向机电耦合系数K_t与(002)面网取向密度指数增量△ρ₍₀₀₂₎具有基本平行的电场依赖关系。 关键词：     

电磁辐射作用于计算机主板的模拟及效应评估

 提出了一种电磁辐射（EMR）效应评估的方法：通过区域分解并且引入子域敏感因子，采用电场强度的加权平均作为EMR效应评估的参考指标。以一款普通计算机主板作为研究对象，使用时域有限差分法（FDTD）进行模拟计算，得到了EMR作用下计算机主板耦合的电磁场分布。基于该效应评估方法，比较了3~12 GHz 的平面电磁波在0°~90°入射时对计算机主板的效应。数值模拟结果表明：随着平面电磁波入射角度的增加，EMR对计算机主板的影响趋于减弱；EMR频率的变化对效应没有显著影响。当EMR入射角度为40°时，最高主板表面耦合的电场强度达到最大值；0°入射时，主板上平均电场强度达到最大值；随着入射EMR频率的升高，主板表面的最大电场强度趋于减弱。     

Magnetoelectric oxide films for spin manipulation in graphene

The challenge of creating a graphene spin field effect transistor (spin‐FET) demands a magnetic gate dielectric material whose magnetization can be switched electrically. We have grown films of Cr₂O₃ on top of graphite and graphene by pulsed laser deposition that shows this crucial functionality. We demonstrate that the Cr₂O₃ films are magnetoelectric by poling them in combined electric and magnetic fields and then using magnetic force microscopy to observe spontaneous surface domain structure as a function of poling field. In addition, we show that the electric field created by a conducting AFM tip can be used to write magnetic patterns in the film that demonstrate the kind of continuous magnetoelectric control needed for a prototype spin‐FET. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

产生蓝色相干辐射和实现Nd:YAG 1.0642μm倍频90°非临界相位匹配的Nb:KTiPO4

本文报道了用熔盐顶部籽晶法生长Nb浓度(0～13)mol%的Nb:KTP晶体的倍频的Ⅱ型相位匹配的截止波长和Nd:YAG1.0642μm及Nd:YA1O₃1.0795μm激光在这些晶体中倍频的最佳相位匹配角的测量结果.从中可看出,由于Nb⁵⁺的引入使KTP晶体倍频的Ⅱ相位匹配的截止波长有效蓝移,目前已使截止波长蓝移至937nm且有效产生468.5nm的倍频蓝光.同时Nb⁵⁺的引入使Nd:YAG1.0642μm激光和Nd:YA1O₃倍频的最佳相位匹配方向产生很大的变化,目前已使Nb:KTP晶体倍频的最佳相位匹配方向为θ=88.32°、Φ=0°,非常接近于90°非临界相位匹配方向.     

Structures responsible for quasisynchronism in second-harmonic generation in BaTiO3:Fe

Second harmonic generation (SHG) of light in iron-doped BaTiO₃ crystals occurs primarily at an angle of about 7° to incident λ=1.06 μm radiation. It is shown that the quasisynchronism is accounted for by a 90° domain structure with a spatial wave vector q∥[011] and a spatial period of about 3 μm. This result may serve as a basis for interpretation of the anomalous SHG enhancement near the phase transition. Fiz. Tverd. Tela (St. Petersburg) 41, 1076–1079 (June 1999)     

低电场周期极化化学比掺镁铌酸锂绿光倍频器

对气相平衡扩散输运工艺制备的化学比掺镁铌酸锂晶体进行周期极化,实验中发现化学比掺镁铌酸锂晶体的矫顽场为12kV/mm,只有常用的同成分铌酸锂晶体的矫顽场的1/20,用低电场就可以制备出结构均匀周期为62～64μm的周期性极化结构.在室温下对此周期极化结构进行二次谐波倍频实验,其归一化倍频转换效率为48%/W。     

Focussing of acoustoelectrically amplified phonons in obliquely-cut CdS crystal

The effect of elastic and acoustoelectric anisotropy on acoustoelectric domain propagation in semiconducting CdS has been studied by Brillouin scattering, in the case where the c-axis of the crystal is obliquely oriented with respect to the electric drift field. In the 45° configuration (the angle between E and c is 45°) angular focussing of energy is observed.     

Poling dynamics of lithium niobate crystals

Ferroelectric domain reversal via electric field poling of congruently melting lithium niobate (LiNbO₃) crystals is investigated. An electro-optic interferometric observation technique reveals spatial and temporal dynamics of the poling process. Starting from seeds, the domains grow until the entire crystal has a switched polarization. During the switching process the boundaries are preferentially aligned along the crystallographic axes. The coercive field between two sequenced domain inversions is transiently reduced after a poling event, and recovers exponentially with a time constant of about half a minute. No light-induced change of the recovery time constant, neither with green nor with ultraviolet light, is observed. The results are of relevance for domain engineering of LiNbO₃ crystals. Received: 6 February 2003 / Published online: 9 April 2003 RID="*" ID="*"Corresponding author. Fax: +49-228/734038, E-mail: wengler@physik.uni-bonn.de     

Lateral-field-excitation properties of LiNbO3 single crystal

LiNbO 3 has been found attractive for lateral field excitation (LFE) applications due to its high piezoelectric coupling. In this paper, bulk acoustic wave propagation properties for LiNbO 3 single crystal excited by a lateral electric field have been investigated using the extended Christoffel-Bechmann method. It is found that the LFE piezoelectric coupling factor for c mode reaches its maximum value of 95.46% when ψ = 0 for both (yxl)-58 and (yxwl)±60 /58 LiNbO 3 . The acoustic wave phase velocity of c mode TSM (thickness shear mode) changes from 3456 m/s to 3983 m/s as a function of ψ. Here ψ represents the angle between the lateral electric field and the crystallographic X-axis in the substrate major surface. A 5 MHz LFE device of (yxl)-58 LiNbO 3 with ψ = 0 was designed and tested in air. A major resonance peak was observed with the motional resistance as low as 17 and the Q-factor value up to 10353. The test result is well in agreement with the theoretical analysis, and suggests that the LFE LiNbO 3 device can be a good platform for high performance resonator or sensor applications.