A preliminary study of the feasibility of using superconducting quarter-wave resonators foraccelerating high intensity proton beams

The superconducting (SC) cavities currently used for the acceleration of protons at a low velocity range are based on half-wave resonators. Due to the rising demand on high current, the issue of beam loading and space-charge problems has arisen. Qualities of low cost and high accelerating efficiency are required for SC cavities, which are properly fitted by using SC quarter-wave resonators (QWR). We propose a concept of using QWRs with frequency 162.5 MHz to accelerate high current proton beams. The main factor limiting SC QWRs being applied to high current proton beams is vertical beam steering, which is dominantly caused by the magnetic field on axis. In this paper, we intend to analyze steering and eliminate it to verify the qualification of using QWRs to accelerate high intensity proton beams.     

Size dependence of the maximum energy of protons from Coulomb explosion of methane clusters under intense femtosecond laser irradiation

An investigation of the cluster size dependence of the maximum energy of protons ejected from explosion of methane clusters in an intense femtosecond laser field has been conducted on the basis of the cluster size estimation by Rayleigh scattering measurements. The interaction of a 2×1016-W/cm2 intense laser pulse (790 nm, 60 fs) with the methane clusters revealed that the clusters were Coulomb exploded and the maximum energy (Emax) of the protons produced was linearly proportional to the square of the cluster radius (rc2). In a cluster size range, with the methane cluster radii up to about 3 nm, the established relation of Emax and rc2 was found to be Emax(keV)=3.3 0.75rc2(nm2), in good agreement with the simulation results. This demonstrated that Coulomb explosion of ionic clusters (C 4H4 )n took place following the cluster vertical ionization in the laser-cluster interaction.     

Size dependence of the maximum energy of protons from Coulomb explosion of methane clusters under intense femtosecond laser irradiation

An investigation of the cluster size dependence of the maximum energy of protons ejected from explosion of methane clusters in an intense femtosecond laser field has been conducted on the basis of the cluster size estimation by Rayleigh scattering measurements. The interaction of a 2 × 1016-W/cm2 intense laser pulse (790 nm, 60 fs) with the methane clusters revealed that the clusters were Coulomb exploded and the maximum energy (Emax) of the protons produced was linearly proportional to the square of the cluster radius (r2c). In a cluster size range, with the methane cluster radii up to about 3 nm, the established relation of Emax and rc2 was found to be Emax (keV) = 3.3 + 0.75r2c (nm2), in good agreement with the simulation results. This demonstrated that Coulomb explosion of ionic clusters (C+4H4+)n took place following the cluster vertical ionization in the laser-cluster interaction.     

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm2 only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.     

Preparation and Characterization of Grain Size Controlled LaB6 Polycrystalline Cathode Material

The grain size controlled bulk Lanthanum hexaboride （LAB6） cathode material was prepared by using the spark plasma sintering method in an oxygen free system. The starting precursor nanopowders with average grain size of 50 nm were prepared by high-energy ball milling. The nanopowder was fully densified at 1300℃, which is about 350℃ lower than the sintering temperature of the coarse powders. The thermionic emission current density was measured to be 42.0 A/cm2, which is much higher than 24.2 A/cm2 of coarse powders and Vickers hardness to be 1860 kg/mm2, which is also higher than 1700 kg/mm2 of coarse one. These results indicate that refining the powder grain size to nano level was beneficial for reducing the sintering temperature and promoting the thermionic emission and mechanic properties.     

Enhanced Raman scattering from nano-SnO2 grains

We present the Raman spectra of nano-SnO_{2} grains with sizes from 4nm to 80nm excited by 532nm and 1.06μm lines. The enhanced Raman scattering of the nanograins is observed for both exciting lines when the grain size is less than 8nm. The less the grain size is, the more intensely the Raman scattering is enhanced. According to our results, the enhancements of the Raman intensity are a few tenfolds and different for different exciting lines when the grain size is 4nm. It can be attributed to enhanced Raman scattering by electron－hole pair excitations in the nanograins that originate from sub-microscopic (10nm) size and other defect- and surface-related features. A critical size that divides respective predominance of bulk properties and the defect-, surface-, and size-related features can be determined to be about 8nm.     

Structural Evolution of Nanostructured γ—Ni—28Fe Alloy Investigated by Using the Internal Friction Technique

The structural evolution of nanostructured γ-Ni-28Fe alloy(n-Ni-Fe)(grain size d-30nm),synthesized by the mechno-chemical method,was investigated by using the internal friction technique combined with differential scanning calorimetry(DSC) in the temperature range from 300K to 670K.An internal friction peak with typical characteristics of the first-order phase transition was observed in the vicinity of 620K,which corresponds to a broad exothermic process revealed by using DSC.Theses results can be explained as the structural changes from the disordering to the ordering transition in the n-Ni-Fe sample.     

Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs （100） substrates by using MOCVD

Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.     

Random lasing in dye-doped polymer dispersed liquid crystal film

A dye-doped polymer-dispersed liquid crystal film was designed and fabricated,and random lasing action was studied.A mixture of laser dye,nematic liquid crystal,chiral dopant,and PVA was used to prepare the dye-doped polymer-dispersed liquid crystal film by means of microcapsules.Scanning electron microscopy analysis showed that most liquid crystal droplets in the polymer matrix ranged from 30 μm to 40 μm,the size of the liquid crystal droplets was small.Under frequency doubled 532 nm Nd:YAG laser-pumped optical excitation,a plurality of discrete and sharp random laser radiation peaks could be measured in the range of 575–590 nm.The line-width of the lasing peak was 0.2 nm and the threshold of the random lasing was 9 m J.Under heating,the emission peaks of random lasing disappeared.By detecting the emission light spot energy distribution,the mechanism of radiation was found to be random lasing.The random lasing radiation mechanism was then analyzed and discussed.Experimental results indicated that the size of the liquid crystal droplets is the decisive factor that influences the lasing mechanism.The surface anchor role can be ignored when the size of the liquid crystal droplets in the polymer matrix is small,which is beneficial to form multiple scattering.The transmission path of photons is similar to that in a ring cavity,providing feedback to obtain random lasing output.     

THERMAL STABILITY AND GRAIN GROWTH OF NANOCRYSTALLINE METAL SILVER

The nanocrystalline metal silver (n-Ag) with average grain size of 10 nm was synthesized by using an inert gas evaporation and in situ compacting technique. The thermal stability of grain size and grain growth caused by isothermally annealing heat treatment, as well as the thermal behavior during grain growth, have been studied. The results indicated that the thermal stability temperature of grain size is about 200℃. The grain growth depends upon the annealing temperature and exhibits threedifferent stages, i.e., slow, fast, and rapid growth stages, corresponding to the temperature ranges from 200℃ to 300℃, from 300℃ to 400℃ and above 400℃, respectively. An exothermal peak and an endothermal peak occur on the differential scanning calorimetriy (DSC) curve of n-Ag. The exothermal peak and the endothermal peak appear in the temperature range from 200℃ to 400℃, and from 400℃ to 660℃, respectively. The enthalpies calculated from the above two peaks depend on the compacting pressure. Further analyses indicated that the grain growth of n-Ag is related to the release of the surface energy of grains and the interracial energy, as well as the strain energy stored in the bulk samples induced by compacting process.     

Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method

A singie cell element of chalcogenide random access memory was fabricated by using the focused ion beam method.The contact size between the Ge2Sb2Te5 Phase change film and the top electrode film is about 600nm (diameter) and the contact area is caiculated to be 0.28μm^2.The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory.The minimum threshold current of about 0.6mA is obtained.     

Ferroelectric behaviour of 30nm BaTiO3 ceramics prepared by high pressure assisted sintering

Dense nanocrystalline BaTiO3 ceramics with a homogeneous grain size of 30 nm was obtained by pressure assisted sintering. The ferroelectric behaviour of the ceramics was characterized by the dielectric peak at around 120 ℃, the P-E hysteresis loop and some ferroelectric domains. These experimental results indicate that the critical grain size for the disappearance of ferroelectricity in nanocrystalline BaTiO3 ceramics fabricated by pressure assisted sintering is below 30 nm. The ferroelectric property decreasing with decreasing grain size can be explained by the lowered tetragonality and the ＇dilution＇ effect of grain boundaries.     

Controllable preparation of vertically standing graphene sheets and their wettability and supercapacitive properties

Vertically standing graphene(VSG) sheets have been fabricated by using plasma enhanced chemical vapor deposition(PECVD) method.The lateral size of VSG nanosheets could be well controlled by varying the substrate temperature.The higher temperature usually gives rise to a smaller sheet size.The wettability of VSG films was tuned between hydrophobicity and hydrophilicity by means of oxygen and hydrogen plasma treatment.The supercapacitor electrode made of VSG sheets exhibited an ideal double-layer-capacitor feature and the specific capacitance reached a value up to 9.62 F·m~(-2).     

Structural,vibrational, optical,photoluminescence, thermal,dielectric, and mechanical studies on zinc(tris) thiourea sulfate single crystal: A noticeable effect of organic dye

In this work, uranine-dyed zinc(tris) thiourea sulfate(ZTS) monocrystals, 26 mm×15 mm×10 mm in size, were synthesized by the solution method at ambient temperature. Their purity, crystallinity, lattice parameters, and functional modes were studied by x-ray diffraction, Fourier transform-infrared spectroscopy(FT-IR), and FT-Raman spectroscopy analyses. The sodium ion content of the crystals from the dye was confirmed by elemental analysis. The diffused reflectance spectral analysis of the dyed crystal revealed a characteristic absorption band at 490 nm attributed to the presence of the dye. The calculated band gaps of the non-dyed and dyed crystals were 4.53 and 4.57 e V, respectively. A green emission peak at ～(512 ± 4) nm was observed in the photoluminescence spectrum of the uranine-dyed crystals. A differential scanning calorimetry study confirmed that the thermal stability improved owing to the addition of the dye. Dielectric and microhardness studies were conducted to examine the significant improvements in the corresponding properties of dyed crystals. The results demonstrated the competency of the dyed ZTS crystals for applications in optoelectronic devices.     

Growth and characterization of InAs quantum dots with low-density and long emission wavelength

The growth parameters affecting the deposition of self-assembled InAs quantum dots(QDs)on GaAs sub- strate by low-pressure metal-organic chemical vapor deposition(MOCVD)are reported,The low-density InAs QDs(～5×10~8 cm~(-2))are achieved using high growth temperature and low InAs coverage.Photolu- minescence(PL)measurements show the good optical quality of low-density QDs.At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum(FWHM)are 1361 nm and 23 meV(35 nm).respectively,which are obtained as the GaAs capping layer grown using triethylgal- lium(TEG)and tertiallybutylarsine(TBA).The PL spectra exhibit three emission peaks at 1361,1280, and 1204 nm,which correspond to the ground state,the first excited state,and the second excited state of the QDs,respectively.     

Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates

The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si(100) substrate.Here the direct epitaxial growth condition of 1.3-μm InAs/GaAs quantum on a Si substrate is further investigated using atomic force microscopy,etch pit density and temperature-dependent photoluminescence(PL) measurements.The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial GaAs nucieation temperature and thickness with strongest room-temperature emission at 400℃(170nm nucieation layer thickness),due to the lower density of defects generated under this growth condition,and stronger carrier confinement within the quantum dots.     

Grain-Size Effect on the Dielectric Properties of Bi0.5Na0.5TiO3

We prepared bismuth sodium titanate (Bi0.5Na0.5TiO3)ultrafine powders by the sol-gel method.The dielctric properties of the pressed pellets and fired ceramics with different grain sizes as a function of tempernature at various frequencies were studied.With decreasing grain size,the dielecric anomaly around 200℃ increases,while the dielectric thermal hysteresis decreases,All the samples with grain sizes larger than 100nm show dielectric peaks at temperature of about 350℃.The very little change in Tm observed down to the critical size indicates that Bi0.5Na0.5TiO3 is an order-disorder system above 200℃,In addition,the dielectric peak becomes lower with decreasing grain size and the ferroelectric critical size of Bi0.5Nan0.5TiO3 was eventually determined to be about 100nm according to the disappearance of dielectric peak.     

High sensitivity Hall devices with AlSb/InAs quantum well structures

AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2·V-1·s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.     

Effect of size on momentum distribution of electrons around vacancies in NiO nanoparticles

Very small nickel oxide nanoparticles were prepared by a sol–gel procedure using nickel nitrate hexahydrate and ammonium hydroxide as precursors. The particles are in the range of 5 nm–11 nm. The x-ray diffraction(XRD) crystallography and high resolution transmission electron microscopy(HRTEM) were employed to characterize the samples.They were found to be polycrystalline in nature and fcc(Na Cl-type) in structure, with the lattice parameter varying with annealing temperature. HRTEM pictures show that the as-prepared samples are hexagonal in shape. Positron annihilation spectroscopy was used to investigate the Doppler-broadened spectra of the samples. The S and W parameters revealed that the chemical surroundings and momentum distribution of the vacancy clusters vary with crystallite size.     

Self－Assembled Monolayers Exposed by Metastable Helium for Nano－Patterning： Octanethiol and Dodecanethiol

A large-area gold pattern with nanoscale edge on muscovite mica was fabricated by using a metastable helium beam and octanethiol (OT) and dodecanethiol (DDT) self-assembled monolayers (SAM), in which the width of edge was typically ～70nm for the OT SAM and ～90nm for the DDT SAM, respectively. The mask was reproduced with high fidelity. Combined the analysis of roughness with grain size, more fiat surface and sharper edge of patterns were obtained by using the shorter chain molecules such as the OT. All the information indicated that the OT SAMs on atomically ttat surfaces can be used as a resist for exposure to metastable atom beams.