Si-W/Si/SiO2/Si(100)的横截面电子显微镜研究

本文用横截面电子显微镜法分析了Si-W/Si/SiO₂/Si(100)在440—1000℃退火后的晶化过程,以及各个界面的变化情况.发现Si-W合金膜中,WSi₂并未优先在表面、界面处形成晶核.当退火温度不高于700℃时,反应在合金膜内发生,表面、界面起伏和缓.退火温度高达800—1000℃时,界面、表面出现原子扩散,造成剧烈的界面起伏;表面则出现小的热沟槽,Si/SiO₂界面也出现高分辨电子显微镜才能观察到的起伏.表面、界面的原子迁移的动力来源于晶界与表面、界面张力.由于SiO₂中Si—O键很稳定,不易发生Si和O在界面处的互扩散,所以Si/SiO₂界面起伏很小. 关键词：     

氮离子轰击钼(001)和钼(110)表面形成的有序结构

用能量为1千电子伏,束流为6微安的氮离子轰击含有痕量碳和氧的钼(001)和钼(110)表面10至15分钟,在俄歇能谱中出现了很强的氮的俄歇峰。从室温直到350℃退火,低能电子衍射观察表明,表面是无序层。样品加热到530℃和650℃之间,在钼(001)表面上得到c(2×2)-氮,p(2×2)-氮和(4(2^1/2)×2^1/2)R45°-氮、氧三种结构的低能电子衍射图;在密堆的钼(110)面得到单一结构的c(7×3)-氮的低能电子衍射图。低能电子衍射图与热脱附密切相关 关键词：     

Si(113)表面原子结构的低能电子衍射研究

利用低能电子衍射(LEED)研究了离子轰击加退火处理的和淀积外延的两种Si(113)表面的原子结构。发现对于经750—800℃退火后的两种Si(113)表面,当其温度高于600℃时存在1×1非再构表面相。随着样品温度缓慢地冷却至室温,Si(113)-1×1表面经过3×1(约600—400℃)最后转变为3×2再构。当退火温度为600℃时,则只出现3×1再构,室温下的3×2和3×1表面都是很稳定的。讨论了表面杂质对Si(113)表面原子结构的影响。在衬底温度为580℃的Si(113)表面上进行淀积生长,当外延 关键词：     

Pd/W/Si(111)双层膜界面X射线光电子能谱与俄歇电子能谱研究

利用X射线衍射（XRD），X射线光电子能谱（XPS）和俄歇电子能谱（AES）对Pd/W/Si（111）界面进行了研究。实验结果表明，当系统作低温退火时，受W膜的阻挡，未生成硅化物，但Pd/W界面和W/Si（111）界面均有互扩散。升高退火温度，Pd－W原子在Si衬底上形成互溶体，Pd原子已穿过W阻挡层而到达W/Si（111）界面处，随着退火温度的继续升高，首先在W/Si（111）界面处生成PdSi_x,WSi_x也随之生成，这样就形成Pd-W原子分布的“反转”，在薄     

氮离子轰击钼(111)表面及退火后形成的有序结构

用能量为一千电子伏,束流为6微安的氮离子轰击钼(111)表面15分钟,在俄歇能谱中出现很强的氮的俄歇峰。从室温至450℃退火低能电子衍射观察表明,表面是无序层。样品加热到562℃左右观察到正方的低能衍射图,可以解释为氮、氧在钼(433)小面的c(3×1)结构。 关键词：     

ATLEED研究6H-SiC(0001)-(3×3)R30°重构表面

低能电子衍射(LEED)对6H-SiC(0001)-(3×3)R30°表面的研究结果表明,该表面有1/3单层的Si原子吸附在T4空位上与第一个SiC复合层中的三个Si原子键接,它们之间的垂直距离为0.171nm.通过对该表面10个非等价垂直入射衍射束的自动张量低能电子衍射(ATLEED)计算,得到“最佳结构”由于表面SiC复合层堆积顺序不同而产生的三种表面终止状态(surface termination)的混合比例为S1∶S2∶S3=15∶15∶70,理论计算与实验I-V曲线比较得到可靠性因子RVHT=0.165,RP=0.142,表明表面生长符合能量最小化的台阶生长机制.     

用氢钝化Si(100)面抑制分子束处延界面的硼尖峰

采用一种新的简便的氢钝化方法,可以在Si(100)衬底表面获得稳定的钝化层。用俄歇电子能谱(AES),反射式高能电子衍射(RHEED),C-V和二次离子质谱(SIMS)等方法对衬底表面及其上面生长的分子束外延层进行检测,发现这种方法可以有效地防止衬底表面被碳、氧沾污,降低退火温度至少200℃,并完全消除外延层与Si(100)衬底界面处的高浓度硼尖峰。在此基础上,结合衬底表面锗束处理的实验结果,对硼尖峰的主要来源是由于硅衬底表面的氧化层这一观点提供了新的有力证据。     

Si(111)分子束外延的生长动力学过程研究

本文用反射式高能电子衍射(RHEED)强度振荡研究了不同生长温度下Si(111)分子束外延的生长动力学过程,生长温度高于520℃(生长速率约0.15?/S)时,Si(111)外延为“台阶流”生长模式,生长温度低于475℃时,外延为“二维成核”双原子层生长模式,在较低温,甚至室温时,其外延仍为双原子层模式,但是镜向弹性散射束振荡和非弹性散射束振荡的叠加会造成RHEED强度在生长的最初阶段出现“类单原子层”模式的振荡特性。 关键词：     

ATLEED研究6H-SiC(0001)(3~(0.5)×3~(0.5))R30°重构表面

低能电子衍射 (LEED)对 6H SiC(0 0 0 1) (3× 3)R30°表面的研究结果表明 ,该表面有 1/3单层的Si原子吸附在T4 空位上与第一个SiC复合层中的三个Si原子键接 ,它们之间的垂直距离为 0 171nm .通过对该表面 10个非等价垂直入射衍射束的自动张量低能电子衍射 (ATLEED)计算 ,得到“最佳结构”由于表面SiC复合层堆积顺序不同而产生的三种表面终止状态 (surfacetermination)的混合比例为S1∶S2∶S3 =15∶15∶70 ,理论计算与实验I V曲线比较得到可靠性因子RVHT=0 .16 5 ,RP=0 .142 ,表明表面生长符合能量最小化的台阶生长机制     

一种改进的运动学低能电子衍射和数据平均方法在Si(111)3~(1/2)×3~(1/2)-Al表面上的应用

本工作运用运动学低能电子衍射和数据平均方法(KLEED和CMTA),对Si(111)3~(1/2)×3~(1/2)-Al表面的原子结构进行研究。在大的参数范围内对T_4和H模型进行优化后,发现T_4模型与实验符合得更好(R_(VHT)=0.158),并且定出Al原子和最上面六层Si原子的位置。该模型中所有键长相对于体内值的变化都在5％以内。它与由全动力学低能电子衍射(DL-EED)分析得到的模型完全相符。这一成功的应用再次表明改进后的KLEED和CMTA方法是一种简单、实用、可靠的表面结构分析手段,用它对一些很复杂的表面进行结构分析已成为可能。     

Study of ultrathin Fe films on Pd{111)}, Ag{111} and A1{111}

The growth of epitaxial Fe films of 1 to 10 layer equivalents (LE) on Pd{111}, Al{111} and Ag{111} has been studied with quantitative low-energy electron diffraction and Auger electron spectroscopy. On Pd{111}, both at room temperature and at 200° C, the growth starts with pseudomorphic layers which may involve intermixing of Fe and Pd. At both temperatures, when the coverage reaches 6 LE, the Fe films develop into large bcc {110} domains related to the substrate by the Kurdjumov-Sachs orientation. On Ag{111} Fe grows initially in a very similar manner to Fe on Ag{001}, i.e., by way of small islands of bcc Fe. These islands then grow into bcc Fe{110} domains in the Nishiyama-Wassennan orientation. On Al{111} Fe behaves differently, despite the fact that the lattice mismatch for Fe on A1{111} is nearly identical to that for Fe on Ag{111}: for coverages of less than 1 LE the surface region becomes completely disordered and no LEED pattern is visible.     

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_(1-x)Sn_x films on Si(100) and Si(111)

Germanium-tin films with rather high Sn content(28.04% and 29.61%) are deposited directly on Si(100) and Si(111)substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge_(1-x)Sn_x films is investigated by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy(AFM). The x-ray diffraction(XRD) is also performed to determine the crystallinities of the Ge_(1-x)Sn_x films. The experimental results indicate that root mean square(RMS) values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400℃. The diameter of the Sn three-dimensional(3 D) island becomes larger than that of an as-grown sample when the annealing temperature is 700℃. In addition, the Sn surface composition decreases when annealing temperature ranges from 400℃ to 700℃. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600℃. The present investigation demonstrates that the crystallinity of Ge_(1-x)Sn_x/Si(111) has no obvious advantage over that of Ge_(1-x)Sn_x/Si(100) and the selection of Si(111) substrate is an effective method to improve the surface morphologies of Ge_(1-x)Sn_x films. We also find that more severe Sn surface segregation occurs in the Ge_(1-x)Sn_x/Si(111) sample during annealing than in the Ge_(1-x)Sn_x/Si(100) sample.     

Properties of the Ce–Pd–Pt(111) overlayer system

The Pd–Pt(111) and the Ce–Pd–Pt(111) overlayer systems were studied by X-ray photoelectron spectroscopy and low-energy electron diffraction (LEED). Variations in the work function were measured by ultraviolet photoelectron spectroscopy. The Pd overlayer thicknesses were in the range of 1 to 4 monolayers (MLs). The Ce overlayer thicknesses were in the range is of 0.5 to 1.5 MLs. The interfaces were studied for annealing temperatures up to 700°C. Surface alloying or intermixing of Ce, Pd and Pt was observed. Upon deposition at ambient temperatures, Ce forms an overlayer. During annealing, both Pd and Ce were found to dissolve into the Pt substrate. For a Pd coverage of about 1 ML, the Ce–Pd–Pt(111) system was found to be Pt, terminated after annealing to 700°C. For Pd coverage above 1 ML, both Pd and Pt were found to be present at the surface. Cerium was found to be absent from the top surface layer in both cases.     

Pulsed laser deposition of Co and growth of CoSi2 on Si(111)

Monolayers of Co were prepared by pulsed laser deposition (PLD) and thermal deposition (TD) on Si(111) substrates. The surface structure and morphology were studied as a function of annealing temperature with scanning tunneling microscopy and low-energy electron diffraction (LEED). Comparing PLD to TD in the monolayer regime, we find surface phases with lower Co content in the top layer for annealing temperatures below 500 °C, indicating an implantation of Co into the Si substrate. The implanted Co leads to an increased intermixing of Co and Si and a higher density of nucleation centers for Co multilayers produced by PLD compared to TD. Multilayer PLD films therefore show an improved film quality, which is detected by an increased intensity of the LEED reflectivity. PACS 68.37.Ef; 61.14.Hg; 68.55.-a     

Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping

The Si capping of Ge/Si(001) islands was observed by in situ time-resolved transmission electron microscopy. During the initial stages of the Si deposition, islands were observed not only to flatten but also to shrink in volume. This unexpected shrinkage is explained by taking into account the intermixing of the deposited Si with the wetting layer and a consequently induced diffusion of Ge from the islands into the wetting layer. A model of the capping process which takes into account Ge diffusion is presented which is in good agreement with the experimental data.     

Interfacial reactions of rf-sputtered TiNi thin films on (100) silicon with a SiN diffusion barrier

Silicon nitride (SiN) with a 50?nm thickness on Si(100) as a thermal barrier was obtained by plasma-enhanced chemical vapour deposition (PECVD). TiNi thin films were rf sputtered on a SiN/Si substrate and then annealed at 400–700°C for 30?min. Their interfacial reactions were studied using transmission electron microscopy, X-ray diffraction and Auger electron spectroscopy analyses. Experimental results show that the thickness of reaction layer in TiNi/SiN/Si specimens is clearly reduced, compared with that in TiNi/Si specimens under the same annealing conditions. The significant effect of the SiN layer as a diffusion barrier in TiNi/SiN/Si can be recognized. N and Si atoms diffuse from the SiN layer to react with TiNi films at 500°C and 600°C respectively. The TiN_{1 ? x} phase is formed in specimens annealed at 500°C, and mixed Ti₂Ni₃Si and Ti₄Ni₂O compounds are found at 600°C. In the specimen annealed at 700°C, the reaction layer has sublayers in the sequence TiNi/Ti₄Ni₂O/Ti₂Ni₃Si/TiN_{1 ? x} /SiN/Si. The SiN thermal barrier obtained by PECVD caused quite different diffusion species to cross the interfaces between TiNi/SiN/Si and TiNi/Si specimens during the annealing.     

EM, XPS and LEED study of deposition of Ag on hydrogenated Si substrate prepared by wet chemical treatments

The deposition of Ag on a hydrogenated Si(111) substrate, prepared by wet chemical treatment, was carried out at room temperature (RT), 250°C and above 350°C. The samples were examined in situ by LEED, XPS and then by SEM and TEM. Our results show that flat Ag crystallite domains are growing on the H/Si(111) surface at all three substrate temperatures. The h/w ratio of the islands increases but the density decreases with increasing substrate temperature which is attributed to the differences between hydrogenated and clean Si(111) surface. The so-called A-type and B-type domains resulting from analyses of TOF ICISS are attributed to twinning in the deposited layer.     

离子注入Zn的Si(001)基片热氧化制备纳米ZnO团簇及其生长行为研究

采用离子注入技术将Zn离子注入Si（001）基片,并在大气环境下加热氧化制备了ZnO纳米团簇.利用电子探针、薄膜X射线衍射仪、原子力显微镜和透射电子显微镜,对注入和热氧化后的薄膜成分、表面形貌和微观结构进行表征,探讨了热氧化温度以及注入剂量对纳米ZnO团簇的成核过程及生长行为的影响.结果表明,Zn离子注入到Si基片表面后形成了Zn纳米团簇,热氧化过程中Zn离子向表面扩散,在表面SiO₂非晶层和Si基片多晶区的界面处形成纳米团簇.热氧化温度是影响ZnO纳米团簇结晶质量的一个重要参数.随着热氧化温度的升高,金属Zn的衍射峰强度逐渐变弱并消失,而ZnO的（101）衍射峰强度逐渐增强.当热氧化温度高于800 ℃以后,ZnO与SiO₂之间开始发生化学反应形成Zn₂SiO₄. 关键词： ZnO纳米团簇 离子注入 微观结构 形貌分析     

Evolution of thermodynamic potentials in closed and open nanocrystalline systems: Ge-Si:Si(001) islands

An open (closed) system, in which matter is (not) exchanged through surface diffusion, was realized via growth kinetics. Epitaxially grown Si-Ge:Si (001) islands were annealed in different environments affecting the diffusivity of Si adatoms selectively. The evolution of the driving forces for intermixing while approaching the equilibrium was inferred from Synchrotron x-ray measurements of composition and strain. For the open system, intermixing due to the Si inflow from the wetting layer (reservoir) caused a decrease in the Ge content, leading to a lowering of the elastic energy and an increase in the mixing entropy. In contrast, for the closed system, while keeping the average Ge composition constant, atom rearrangement within the islands led to an increase in both elastic and entropic contributions. The Gibbs free energy decreased in both cases, despite the different evolution paths for the composition profiles.     

Growth, structure and oxidation of ordered silicon layers on nickel (001)

Thin silicon films deposited in ultra-high vacuum on Ni(001) have been studied, as a function of annealing and/or O₂ exposure, using Auger spectroscopy and low energy electron diffraction. Annealing at temperatures as low as 200 ° C causes rapid intermixing, with only about one monolayer of Si (θ ≈ 1) remaining in a disordered surface layer. Annealing at successively higher temperatures causes further intermixing and the appearance of a c(2 × 2) ordered overlayer (θ = 0.5). The rate of O chemisorption and the structure of the oxide are found to depend on the structure of the adsorbed Si layer. For the c(2 × 2) layer, O₂ exposure leads to the rapid formation of multiple Si---O bonds at all surface Si sites, as in the case of bulk Ni₃Si. This effect is less pronounced (and the saturation O coverage lower) for a surface having a somewhat higher Si coverage but in the form of a disordered layer. The results are interpreted in terms of the involvement of underlayer Ni atoms in promoting O₂ dissociation.