聚吡咯/铁酸镍纳米复合材料制备和应用研究

以FeCl_3为氧化剂和掺杂剂经原位氧化聚合制备了聚吡咯/铁酸镍纳米复合材料,用以吸附处理废液中高浓度的铬(Ⅵ)。分别采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和振动样品磁强计(VSM)对产物的结构、形貌与磁性能进行了表征。结果表明,复合吸附材料由20~30nm大小的NiFe_2O_4多晶球簇内核及外层聚吡咯包覆而成,其饱和磁化强度为7.89emu/g。对含铬(Ⅵ)污水吸附研究表明,该吸附剂在60min内即可达到吸附平衡,吸附效果优异,同时考察了NiFe_2O_4掺杂比例、吸附时间、pH、铬(Ⅵ)初始浓度对吸附效果的影响。在pH=5的条件下,聚吡咯/铁酸镍复合材料在30min内对铬(Ⅵ)的最大吸附量为49.81mg/g。     

氧分压对溅射制备氧化镓薄膜结构及光学带隙的影响

在不同氧分压η(η=O2/[Ar+O2])实验条件下,通过直流反应溅射制备了氧化镓薄膜,然后在真空环境下进行高温再结晶热处理.用紫外-可见分光光度计(UV-Vis)研究了氧分压η对光学带隙Eg的影响.X射线衍射(XRD)和共聚焦拉曼散射光谱(Raman Scattering)分析显示:经900℃高温热处理后,薄膜呈结晶β相氧化镓,且晶粒尺寸随着氧分压的逐渐增加而变大.室温下由UV-Vis测试薄膜透过率并利用Tauc公式计算得到样品的光学带隙Eg在4.68—4.85 eV之间,且随氧分压η的逐渐增加而变大.     

催化剂对热蒸发CVD法生长β-Ga2O3纳米材料的结构及发光特性的影响

用热蒸发CVD法制备了β-Ga2O3纳米材料,探讨了Au催化剂对纳米结构和形貌的影响,并研究了其光致发光特性。X射线衍射(XRD)分析显示产物为单斜结构的β-Ga2O3。扫描电子显微镜(SEM)测试表明:Au催化剂颗粒尺寸较小时,制备的产物为尺度均匀的β-Ga2O3纳米线,宽度小于100 nm,长度为几微米至几十微米;增加催化剂颗粒尺寸时,制备出的β-Ga2O3纳米结构的尺度变大,形貌由纳米线逐步形成纳米带、片等形状。β-Ga2O3纳米结构在波长516 nm处有很强的绿光发光带,而且随着催化剂颗粒尺寸的增加,发光强度和峰位"红移"现象逐渐减弱。     

Preparation and NO_2-gas sensing property of individual β-Ga_2O_3 nanobelt

Monoclinic gallium oxide (β-Ga_2O_3) nanobelts are synthesized from gallium and oxygen by thermal evaporation in an argon atmosphere and their NO_2 sensing properties are studied at room temperature.Electron microscopy studies show that the nanobelts have breadths ranging from 30 to 50 nm and lengths up to tens of micrometers.Both the x-ray diffraction (XRD) and the selected are electron diffraction (SAED) examinations indicate that β-Ga_2O_3 nanobelts have grown into single crystals.Room temperature NO_2 sensing tests show that the current of individual β-Ga_2O_3 nanobelt decreases quickly,and then gently when the NO_2 concentration increases from low to high.It is caused by the NO_2 molecule chemisorption and desorption processes in the surface of β-Ga_2O_3 nanobelt.     

Influence of Oxygen Pressure on Structural and Sensing Properties of β-Ga2O3 Nanomaterial by Thermal Evaporation

We prepare the gallium oxide （β-Ga2O3） nanomaterials from gallium and oxygen by thermal evaporation in the argon atmosphere and research their oxygen sensing under UV illumination with different oxygen pressures. X-ray diffraction reveals that the synthesized product is monoclinic gallium oxide, it is further confirmed by electron diffraction of transmission electron microscope, and its morphology through the observation using scanning electron microscope reveals thatβ-Ga2O3 nanobelts with a breadth less than lOOnm and length of severai micrometers are synthesized under low oxygen pressure, while the nano/microbelts are synthesized under high oxygen pressure. Room-temperature oxygen sensing is tested under at 254 nm illumination and it is found that the current decreases quickly first and then slowly with oxygen pressure from low to high.     

氧流量对热蒸发CVD法生长β-Ga2O3纳米材料的结构及发光特性的影响

用热蒸发CVD法制备了β-Ga₂O₃纳米材料, 并用光致发光(PL)方法研究了其发光特性. Ｘ射线衍射分析显示, 产物为单斜结构的β-Ga₂O₃. 扫描电子显微镜测试表明: 在较小氧流量条件下制备的产物为β-Ga₂O₃纳米带, 宽度小于100nm, 长度有几微米; 较大氧流量时制备出β-Ga₂O₃纳米晶粒结构, 晶粒尺度在80—15 关键词： 光致发光 氧流量 纳米结构 2O₃')" href="#">Ga₂O₃     

氧流量对热蒸发CVD法生长β-Ga2O3纳米材料的结构及发光特性的影响

用热蒸发CVD法制备了β-Ga2O3纳米材料, 并用光致发光(PL)方法研究了其发光特性.X射线衍射分析显示, 产物为单斜结构的β-Ga2O3.扫描电子显微镜测试表明:在较小氧流量条件下制备的产物为β-Ga2O3纳米带, 宽度小于100nm, 长度有几微米; 较大氧流量时制备出β-Ga2O3纳米晶粒结构, 晶粒尺度在80-156nm.PL的测试表明: β-Ga2O3纳米结构在波长516nm处有很强的绿色发光带, 且随着氧流量的逐渐增加发光强度逐渐减弱.在氧气氛中900℃退火2h处理后, 发光强度减弱, 进一步证实氧空位缺陷是β-Ga2O3纳米材料发光的主要因素.