竖直圆管中超临界压力CO2在低雷诺数下对流换热研究

本文对竖直圆管中超临界压力二氧化碳在低雷诺数条件下的对流换热进行了实验研究和数值模拟。实验中分析了不同入口温度、热流密度以及流动方向等对超临界CO2流动和换热的影响。实验结果与计算结果的比较表明:在热流密度较小的情况下实验结果与数值计算结果基本吻合;而在热流密度较大的情况下,由于浮升力的影响,流动可能提前从层流转变为湍流,使换热强化。     

CHF3 Dual-Frequency Capacitively Coupled Plasma by Optical Emission Spectroscopy

We investigate the intermediate gas phase in the CHFs 13.56 MHz/2 MHz dual-frequency capacitively couple plasma （CCP） for the SiCOH low dielectric constant （low-k） film etching, and the effect of 2MHz power on radicals concentration. The major dissociation reactions of CHF3 in 13.56MHz CCP are the low dissociation bond energy reactions, which lead to the low F and high CF2 concentrations. The addition of 2MHz power can raise the probability of high dissociation bond energy reactions and lead to the increase of F concentration while keeping the CF2 concentration almost a constant, which is of advantage to the SiCOH low-k films etching. The radical spatial uniformity is dependent on the power coupling of two sources. The increase of 2 MHz power leads to a poor uniformity, however, the uniformity can be improved by increasing 13.56 MHz power.     

竖直细圆管中超临界CO_2对流换热实验研究

本文对超临界二氧化碳在竖直细圆管中的对流换热进行了实验研究,研究了入口温度、流体流量、热流密度及浮升力等对换热的影响。结果表明,超临界压力条件下流体的进口温度、流量和热流密度对对流换热有很大的影响。当流量比较大而热流密度比较低时,物性的变化相对较弱,计算结果与实验数据基本吻合;而当流量比较小而热流密度比较高时,物性的变化相当剧烈,计算结果与实验数据有很大差异。     

多孔介质中超临界C O2对流换热数值模拟

本文对超临界二氧化碳在多孔结构中的对流换热进行了数值模拟研究.结果表明,超临界条件下二氧化碳剧烈的变物性对多孔介质中的对流换热会产生很大影响;局部热平衡条件下对流换热系数的数值计算值比局部非热平衡条件下的计算结果大;对流换热系数随着颗粒直径的增大而增大.     

Photoluminescence of silicone oil treated by fluorocarbon plasma

We investigated photoluminescence characteristics of silicone oils treated by C2F6 and CHF3 plasma. The silicone oil treated by the C2F6 plasma emitted a white light mainly composed of 415 nm, 469 nm, and 554 nm emissions, while that treated by the CHF3 plasma emitted a pink light (415 nm). Fourier transformed infrared spectroscopy and Raman spectroscopy studies showed that the photoluminescence was correlated with the Si-C bond, the carbon-related defects and the oxygen vacancies. It was suggested that the light emitting at 554 nm was related to the Si-C bond and the carbon-related defects, while the pink emission at 415 nm was related to the oxygen vacancies.     

CHF3双频电容耦合放电等离子体特性研究

研究了用于SiCOH 低介电常数薄膜刻蚀的CHF₃气体在1356 MHz/2 MHz,2712 MHz/2 MHz和60 MHz/2 MHz双频电容耦合放电时的等离子体性质.发现2 MHz低频源功率的增大主要导致F基团密度的增大;而高频频率从1356,2712增大到60 MHz,导致CF₂基团的密度增大和电极之间F基团密度的轴向空间不均匀性增加.根据电子温度的分布规律及离子能量随高频源频率的变化关系,提出CF₂基团的产生主要通过电子-中性气体碰撞,而F基团的产生是离子-中性气体碰撞的结果. 关键词： 双频电容耦合放电 3等离子体')" href="#">CHF₃等离子体     

CHF3双频电容耦合放电等离子体特性研究

研究了用于SiCOH 低介电常数薄膜刻蚀的CHF₃气体在1356 MHz/2 MHz,2712 MHz/2 MHz和60 MHz/2 MHz双频电容耦合放电时的等离子体性质.发现2 MHz低频源功率的增大主要导致F基团密度的增大;而高频频率从1356,2712增大到60 MHz,导致CF₂基团的密度增大和电极之间F基团密度的轴向空间不均匀性增加.根据电子温度的分布规律及离子能量随高频源频率的变化关系,提出CF₂基团的产生主要通过电子-中性气体碰撞,而F基团的产生是离子-中性气体碰撞的结果.