镶嵌在SiO2薄膜中InAs纳米颗粒的Raman散射

对镶嵌在SiO₂薄膜中纳米InAs颗粒的Raman散射谱进行了研究.与大块InAs晶体相比,InAs纳米颗粒的Raman散射谱具有相似的特征,即由纵光学声子模和横光学声子模组成,但是散射峰宽化并红移.用声子限域效应解释了散射峰的红移现象,并结合InAs纳米颗粒的应力效应解释了红移量与理论值的差异. 关键词： 2薄膜')" href="#">SiO₂薄膜 InAs量子点 Raman散射     

镶嵌在SiO2薄膜中纳米GaAs颗粒的Raman散射研究

纳米GaAs颗粒通过射频磁控共溅法成功地被镶嵌在SiO_2薄膜中.通过不同基片温度下沉积的薄膜的Raman光谱观察到了明显的声子限域效应.其结果表明:当沉积时基片温度低于200℃时,X射线衍射和Raman散射均表现出非晶结构特征;当基片温度升高到300℃时,薄膜内的GaAs具有闪锌矿结构,同时其结构振动纵光学声子模对应的Raman散射峰将从非晶散射峰中分离出来,但同大块材料相比,该峰表现出明显的宽化和红移;随着沉积时的基片温度进一步提高,其宽化和红移相应地减小. 关键词：     

ZnSe-ZnS应变超晶格的Raman散射

本文报导了Znse—ZnS应变超晶格的Raman光学声子谱.我们观测到,随着应变大小的改变,ZnSe和ZnS的纵向光学声子发生频移.ZnSe层中纵向光学声子可发生较大的蓝移,也可发生较小的红移;ZnS层中的纵向光学声子发生较大的红移.这些现象为“应变场下的光学模理论”所解释.文中还报导了在波数为110cm-1处观测到一很强的散射峰,并把它归结为超晶格表面层单斜Se所引起的散射;在其它地方还观测到非晶态Se、三角Se引起的散射峰.     

Al2O3薄膜/纳米Ag颗粒复合结构的光吸收谱及增强Raman散射光谱研究

Al₂O₃介质薄膜与纳米Ag颗粒构成的复合结构,被应用于表面增强Raman散射探测实验中,其中Al₂O₃介质薄膜对纳米Ag颗粒的吸收谱及增强Raman散射光谱的影响被特别关注.该复合结构的光学特性表征出纳米Ag颗粒的偶极振荡特性.从光吸收谱中可以看到,其共振吸收谱随Al₂O₃介质薄膜厚度增加而在整个谱域上发生红移,表明纳米Ag颗粒的周围介电常数随Al₂O₃介质薄膜厚度的增加而增大.采用罗丹明6G作为探针原子,6个Raman特征峰的平均增益值作为表征表面增强Raman散射衬底增益程度的量度.实验结果表明,Al₂O₃介质薄膜层的引入提高了纳米Ag颗粒的衬底介电常数,并引起了散射共振的增强,从而使表面增强Raman散射强度提高. 关键词： 纳米Ag薄膜 共振吸收 表面增强Raman散射 介电常数     

玻璃介质中CdSxSe1-x微晶的表面声子模

通过玻璃介质中的CdSxSe1-x微品的Raman散射,详细观测了表面声子模。表面声子的散射强度随微晶颗粒变小而增强;其Raman频移与微晶尺寸无关。表面声子峰在反Stokes线中同样存在。实验结果与理论计算结果相符合。     

Al2O3薄膜/纳米Ag颗粒复合结构的光吸收谱及增强Raman散射光谱研究

Al₂O₃介质薄膜与纳米Ag颗粒构成的复合结构,被应用于表面增强Raman散射探测实验中,其中Al₂O₃介质薄膜对纳米Ag颗粒的吸收谱及增强Raman散射光谱的影响被特别关注.该复合结构的光学特性表征出纳米Ag颗粒的偶极振荡特性.从光吸收谱中可以看到,其共振吸收谱随Al₂O₃介质薄膜厚度增加而在整个谱域上发生红移,表明纳米Ag颗粒的周围介电常数随Al₂O₃介质薄膜厚度的增加而增大.采用罗丹明6G作为探针原子,6个Raman特征峰的平均增益值作为表征表面增强Raman散射衬底增益程度的量度.实验结果表明,Al₂O₃介质薄膜层的引入提高了纳米Ag颗粒的衬底介电常数,并引起了散射共振的增强,从而使表面增强Raman散射强度提高.     

ZnSe—ZnTe应变层超晶格的纵光学声子模

本文首次利用室温非共振喇曼后向散射测得具有7.3％晶格失配的ZnSe-ZnTe应变层超晶格限制在ZnSe层中的纵光学声子模。计算了限制效应引起的声子模频率的红移,以及弹性应变引起的声子模的移动,它比前者大得多。ZnSe层所受拉伸应变引起声子频率红移,ZnTe层所受压缩应变引起声子频率蓝移。同时在喇曼光谱中观察到由于这种效应导致出现的纵光学声子折叠模。     

用硅离子注入方法制备的纳米硅的拉曼散射研究

在直角散射配置下测量了纳米硅样品的拉曼散射谱及其退火温度的关系。结果表明,在８００℃以下退火的样品只观察到单晶硅衬底的光学声子模,在９００℃以上退火,才观察到纳米硅的特征拉曼散射峰。在１２００℃下退火后,纳米硅的特征拉曼散射峰消失,观察到类似于非晶硅的光学声子特征峰,可能表示纳米硅不能承受这样的高温热退火。这些结果进一步证实了光致发光谱的结果。     

纳米Ge颗粒镶嵌薄膜的Raman散射光谱研究

研究了镶嵌在ＳｉＯ_２介质中的不同尺寸（４—１６ｎｍ）纳米Ｇｅ颗粒的Ｒａｍａｎ散射谱特征，与大块标准Ｇｅ晶体的散射峰相比，观察到了理论预期的纳米半导体粒子的Ｒａｍａｎ散射峰的宽化和红移现象．采用声子限域模型较好地解释了实验结果．探讨了ＳｉＯ_２介质基体作用于镶嵌Ｇｅ粒子的压应力以及纳米Ｇｅ粒子的表面界面效应对Ｒａｍａｎ散射光谱的峰形、峰位变化所产生的影响 关键词：     

重碳掺杂p型GaAs中纵光学声子与等离振子耦合模的Raman散射特性

对用MOMBE法生长的重C掺杂p型GaAs进行了Raman散射研究,结合理论分析,较好地解释了p型GaAs中纵光学(LO)声子与空穴等离振子耦合(LOPC)模的Raman散射特性,证明它具有与n型状态不同的特点,根据实验结果讨论了重掺杂对Raman散射谱的影响,发现LOPC模的散射峰特征(位置和宽度)与重掺杂效应程度具有很大关系。     

用拉曼散射光谱估算纳米Ge晶粒平均尺寸

用射频共溅射技术和真空退火方法制备了埋入ＳｉＯ２基底中的纳米Ｇｅ复合膜（ｎｃ－Ｇｅ／ＳｉＯ２）测量了不同温度退火后该复合膜的拉曼散射光谱，其结果与晶体Ｇｅ的拉曼谱相比，纳米Ｇｅ的拉曼峰红移峰形变宽，用拉曼谱的参数计算了纳米Ｇｅ晶粒的平均尺寸，所得结果与声子限域理论模型符合。     

利用高压拉曼散射研究Ge/SiO_2/Si纳米系统的压力/张力(英文)

pacc:7830,8100 WereportthepressuredependenceofGe nanocrystalsembeddedinSiO2filmmatrixonSi substrateusingRamanscatteringandfiniteele mentanalysis.DelaminationofSiO2filmfromthe Sisubstrateoccursat～23kbarduetothelarge differencebetweenthecompressibilityoft…     

Visible photoluminescence from silicon nanopowders produced by silicon evaporation in a high-power electron beam

Silicon nanopowders produced by electron-beam-induced evaporation of a bulk silicon sample in an argon atmosphere are studied by the photoluminescence technique and Raman scattering spectroscopy. A photoluminescence peak in the visible region of the spectrum has been detected at room temperature in powders consisting of silicon nanocrystals. The strong short-wavelength shift of the photoluminescence peak can be attributed to the quantum size effect of electrons and holes in small silicon nanocrystals (about 2 nm). The size of silicon nanocrystals is determined by analyzing Raman spectra, and it is consistent with estimates obtained from photoluminescence data.     

Silicon nanoparticles: Their photoluminescence, complex refractive index, and relationship with the band structure

The photoluminescence, IR transmission, and Raman scattering spectra of nc-Si nanocrystals (5 nm in size) have been investigated. The shape and spectral position of maxima in the photoluminescence and IR transmission spectra are theoretically described. It is shown that nc-Si particles consist of a Si core and a SiO₂ shell. The existence of surface Si-O and Si-H states in Si nanocrystals enhances photoluminescence. It is established that the spectral position of the main Raman scattering peak in the frequency range 500–520 cm^?1 undergoes a significant red shift for small-size nanostructures. Based on direct determination of the complex refractive index of n-Si nanoparticles by measuring spectral ellipsometric parameters, nanostructured silicon is found to be an indirect-gap semiconductor.     

GaAs/SiO2纳米晶镶嵌薄膜的拉曼光谱与吸收光谱研究

采用射频磁控共溅射与高真空退火相结合的方法,分别在单晶硅片和光学石英玻璃片上制备了ＧａＡｓ／ＳｉＯ２纳米晶镶嵌薄膜样品。激光拉曼光谱的测量结果表明,退火态样品（４００℃,６０ｍｉｎ）的拉曼光谱特征峰呈现宽化和红移,红移量为９．５ｃｍ＾－１,对应薄膜中ＧａＡｓ纳米晶粒平均粒径约为３ｎｍ。样品的室浊吸收光谱测量结果表明,由于受量子限域效应的主导作用,与ＧａＡｓ块状单晶相比,样品光学吸收边呈现出明显的蓝     

Photoluminescence and Raman spectra of SnO<Subscript>x</Subscript> nanostructures doped with Sm ions

The photoluminescence (PL) and Raman scattering of SnO_x nanoparticles deposited from vapor phase have been studied. The PL spectra are characterized by a two-band structure. The high-energy band in the range from 300 to 350 nm is due to the exciton pair annihilation and may characterize the band gap of SnO_x nanocrystals as a function of their diameter. In the red spectral region (from 600 to 700 nm), a luminescence band due to defects in nanocrystals manifests itself. The existence of defects in SnO_x nanostructures is confirmed by Raman spectroscopy. Doping of SnO_x nanoparticles with rare earth (samarium) atoms leads to the appearance of strong luminescence lines in the red region of the PL spectrum.     

Features of the Angular Dependence of Raman Scattering in Silicon Nanocrystals

Journal of Experimental and Theoretical Physics - The angular dependence of Raman scattering intensity in silicon nanocrystals has been measured. Silicon nanocrystals have been fabricated by...     

Study of porous silicon structure by Raman scattering

In this paper, the effect of etching time on light emitting porous silicon has been studied by using Raman scattering. Enhancement of Raman intensity by increasing the porosity is observed. Also there is a red shift, about 4 cm⁻¹, from the Raman peak of crystalline silicon to that of porous silicon. The phonon confinement model suggests the existence of spherical nanocrystalline silicon with diameter around 7 nm. But SEM images show that the samples have a sheetlike structure that confines phonons in one dimension. This should not cause any shift in their Raman spectra. It is suggested that the observed Raman peak shift is due to the spherical nanocrystals on the surface of these sheets.     

Quantum confinement in CdSxSe1−x spherical nanocrystals in a fluorophosphate glass matrix

Differential (wavelength-modulated) absorption of sulfoselenide solid-solution nanocrystals has been studied in a glassy fluorophosphate matrix near the fundamental absorption edge at 360–620 nm. The observed oscillations in the absorption are attributed to size quantization of electrons and holes under strong quantum-confinement conditions. The sulfur content in the mixed semiconductor has been refined from Raman scattering spectra in CdS_xSe_1?x samples with x=0.30, and the nanocrystal size (R?30 Å) has been derived from low-frequency Raman scattering spectra. These data were used to calculate the energies of electron-hole transitions in nanocrystals of mixed composition, and their subsequent comparison with experiment. The calculations were found to be in a good agreement with the observed experimental absorption spectrum for nanocrystals about 45 Å in size. The applicability of band-structure simulation for a nonspherical nanocrystal grown in a fluorophosphate glass matrix is discussed.