Ag离子注入非晶SiO2的光学吸收、拉曼谱和透射电镜研究

能量为200keV的Ag离子，以1×10¹⁶，5×10¹⁶，1×10¹⁷ cm^-2的剂量分别注入到非晶SiO₂玻璃，光学吸收谱显示：注入剂量为1×10¹⁶ cm^-2的样品的光吸收谱为洛伦兹曲线，与Mie理论模拟的曲线形状一致；注入剂量较大的5×10¹⁶，1×10¹⁷ cm^-2的谱线共振吸收增强，峰位红移并出现伴峰. 透射电镜观察分析表明，注入剂量不同的样品中形成的纳米颗粒的大小、形状、分布都不同，注入剂量较大的还会产生明显的表面溅射效应，这些因素都会影响共振吸收的峰形、峰位和峰强. 当注入剂量达到1×10¹⁷ cm^-2时，Ag纳米颗粒内部可能还形成了杂质团簇. 关键词： 离子注入 纳米颗粒 共振吸收 红移     

Ti离子注入和退火对ZnS薄膜结构和光学性质的影响

利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80 keV,剂量1×10¹⁷ cm^-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700 ℃.利用X射线衍射（XRD）研究了薄膜结构的变化,利用光致发光（PL）和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500 ℃退火1 h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄 关键词： ZnS薄膜 离子注入 X射线衍射 光致发光     

类金刚石膜不同能量下的离子注入

本文对等离子体气相沉积法制备的类金刚石膜(a-C:H)进行了离子注入研究。注入剂量固定为5×10⁵Ar/cm²,注入能量分别为50,100,140和180keV。离子注入前后分别作了红外吸收谱,Raman谱,光学能隙,氢含量和电阻率的测量。结果表明,注入离子破坏了膜中的C—H键,sp²和sp³态都减少,而(sp²/sp³)比值增大;光学能隙E_opt,电阻 关键词：     

分子束外延PbTe单晶薄膜的反常拉曼光谱研究

采用分子束外延(MBE)方法在BaF₂(111)衬底上生长了高质量的PbTe单晶薄膜， 拉曼光谱测量观察到了表面氧化物的振动模、布里渊区中心(q≈0)纵光学(LO)声子振动模以 及声子-等离子激元耦合模振动.随着显微拉曼光谱仪激光光斑聚焦深度的改变，各拉曼散射 峰的峰位、积分强度、半高宽等都表现出不同的变化趋势. 随着激光光斑聚焦位置从样品表 面上方3μm处变化到表面下方3μm处，PbTe外延薄膜的LO声子频率从119cm^-1移 动到124cm^{-1关键词： PbTe外延薄膜 拉曼散射 纵光学声子}     

Fe+注入植物种子射程实验的Monte-Carlo仿真

研究表明,TRIM程序运算结果与实验测量离子注入种子的射程分布数据相差甚远.本文根据种子微结构的特点,综合考虑多种因素,设计种子微结构模型和运算程序,用Monte-Carlo仿真不同能量（110 keV,20 keV,200 keV）、不同注量（2×10¹⁶ ions·cm^-2,5×10¹⁶ ions·cm^-2,10¹⁷ ions·cm^-2,2×10¹⁷ ions·cm^-2）的Fe⁺注入花生、彩棉、小麦种子的射程分布,结果显示本设计程序仿真的结果与实验测量数据较为吻合.所获得的注入离子与种子微结构相互作用的随机抽样模拟运算方法,为离子注入与生命体相互作用的理论研究提供新的思路.     

掺Er/Er+O的GaN薄膜光学性质的研究

利用Raman散射谱研究了GaN注Er以及Er+O共注样品的振动模，并讨论了共注入O对Er离子发光的影响. 在Raman散射谱中，对于注Er的GaN样品出现了300 cm^-1和670 cm^-1两个新的Raman峰，而对于Er+O共注样品，除了上述两个峰外，在360 cm^-1处出现了另外一个新的峰，其中300 cm^-1峰可以用disorder-activated Raman scattering (DARS)来解释，670 cm^-1峰是由于与N空位相关的缺陷引起的，而360 cm^-1峰是由O注入引起的缺陷络合物产生的. 由于360 cm^-1模的缺陷出现，从而导致Er+O共注入GaN薄膜红外光致发光(PL)强度的下降. 关键词： GaN Er Raman散射 光致发光     

铒离子注入6H-SiC的横向离散研究

利用离子注入掺杂技术设计、制作半导体集成器件时,了解离子注入半导体材料的射程分布、射程离散和横向离散规律等是很重要的.用400 keV能量的铒(Er)离子分别与样品表面法线方向成0°,45°和 60°倾角注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×10¹⁵ cm^-2 的400 keV Er离子注入6H-SiC晶体的横向离散.测出的实验值与TRIM98和SRIM 2006得到的理论模拟值进行了比较,发现实验值跟TRIM98和SRIM 关键词： 离子注入 6H-SiC 卢瑟福背散射技术 横向离散     

草酰氯的激光诱导荧光激发谱

本文报道草酰氯C₂O₂Cl₂在358—372.5nm范围的激光诱导荧光(LIF)激发谱。对60多条振动谱带进行了归属,其中24条是吸收光谱中没有的。由振动结构得到C₂O₂Cl₂分子在X基态和?激发态的部分振动频率,其中v＂₇=84cm^-1和v＇₇=164cm^-1是新的数据。对4₀¹振动带的转动结构的分析给出转动常数A=0.190cm^-1,B=0.114cm^-1,C=0.048cm^-1。 关键词：     

预注入对Si1-xCx合金形成的影响

室温下在单晶Si中注入(0.6—1.5)at%的C原子,部分样品在C离子注入之前在其中注入²⁹Si⁺离子产生损伤,然后在相同条件下利用高温退火固相外延了Si_1-xC_x合金,研究了预注入对Si_1-xC_x合金形成的影响.如果注入C离子的剂量小于引起Si非晶化的剂量,在950℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si_1-xC关键词： 离子注入 固相外延 1-xC_x合金')" href="#">Si_1-xC_x合金     

微波电子回旋共振等离子体化学气相淀积法制备非晶氟化碳薄膜的研究

采用电子回旋共振等离子体化学气相淀积(ECR-CVD)法，以C₄F₈和CH₄为源气体制备了非晶氟化碳(a-C：F)薄膜.X射线电子能谱(XPS)和傅里叶变换红外光谱(FTIR)分析表明，a-C：F薄膜退火后厚度减小是由于位于a-C：F薄膜交联结构末端的C—C和CF₃结合态的热稳定性较差，导致退火时容易生成气态挥发物造成的.a-C：F膜介电常数在300℃氮气气氛中退火后由于电子极化增大和薄膜密度增加而上升，界面态陷阱密度从(5—9)×10¹¹eV^-1·cm^-2降至(4—6)×10¹¹eV^-1·cm^-2.a-C：F薄膜导电行为在低场强区域呈现欧姆特性，在高场强区域符合 Poole-Frankel机理.非定域π电子在带尾形成陷阱且陷阱能量在退火后降低，从而使更多陷阱电子在场增强热激发作用下进入导带并引起电流增大. 关键词： a-C：F ECR-CVD 键结构 电学性质     

Irradiation Effect in C60 Films Induced By Low Energy Ions

Irradiation effecs, mainly including transformation from crystalline into amorphous state, of C₆₀, films induced by 120keV H, Ar and Fe ions irradiation were analysed by means of Raman scattering technique. The results indicate that amorphization process in the cases of Ar and Fe ions irradiation is dominated by nuclear collision, but in the case of H ion irradiation, the process is dominated by electronic energy transfer. The annealing effect of electronic energy loss which induced the intermediate graphitization process before amorphization in lower irradiation dose ranging from 2×10¹⁴ ions/cm² to 5×10¹⁶ ions/cm² was found in the case of H ion irradiation for the first bine.     

C60 sputtering of organics: A study using TOF-SIMS, XPS and nanoindentation

Sputtering of organic materials using a C₆₀ primary ion beam has been demonstrated to produce significantly less accumulated damage compared to sputtering with monatomic and atomic-cluster ion beams. However, much about the dynamics of C₆₀ sputtering remains to be understood. We introduce data regarding the dynamics of C₆₀ sputtering by evaluating TOF-SIMS depth profiles of bulk poly(methyl methacrylate) (PMMA). Bulk PMMA provides an ideal test matrix with which to probe C₆₀ sputter dynamics because there is a region of steady-state secondary ion yield followed by irreversible signal degradation. C₆₀ sputtering of PMMA is evaluated as a function of incident ion kinetic energy using 10 keV C₆₀⁺, 20 keV C₆₀⁺ and 40 keV C₆₀⁺⁺ primary ions. Changes in PMMA chemistry, carbon accumulation and graphitization, and topography as a function of total C₆₀ ion dose at each accelerating potential is addressed.     

Substrate effects on the analysis of biomolecular layers using Au, Au3 and C60 bombardments

Effects of platinum silicon, graphite and PET substrates on the secondary ion yield of sub-monolayer and multilayer samples of Cyclosporin A following 20 keV Au⁺, Au₃⁺and C₆₀⁺ impacts have been investigated. The obtained results of sub-monolayer samples show that platinum enhances the yield of the pseudo-molecular ion following Au⁺ and Au₃⁺ impacts due to the high density of the substrate that enables the energy of the primary ions to be deposited near the surface. C₆₀⁺ impacts on sub-monolayer samples are less effective, but there is an enhancement on PET substrates. Impacts of 20 keV Au⁺ and Au₃⁺ are not very efficient on multilayer samples. 20 keV C₆₀⁺ impacts enhance the yields significantly, especially for the relatively high molecular weight [M+H]⁺ ion.     

Thermal Raman shift of the C60 tangentialA g mode

Fullerence C₆₀ exhibits a continuous and reversibleA _g (2) mode softening from 1469 to 1459 cm^–1, which is linear with laser power up to 21.9 kW/cm² for C₆₀ crystals under vacuum. Model calculations taking into account the temperature distribution that is induced by the Gaussian intensity profile of the laser beam reproduce the measured frequency shifts. A thermal conductivity of microcrystalline fullerene of 0.27(±0.03) W/mK is derived from this numerical analysis.     

Formation of higher-order fullerene dianions in collisions with Na atoms

We have measured electron capture cross sections in collisions between higher order fullerene anions C_n ^- (n=76, 78, 82, 84, 86, 90 and 96) and Na atoms. The ions were produced in an electrospray ion source (ESI) and accelerated to an energy of 50 keV. The measured cross section for dianion formation is three times larger for C₉₆ than that for C₆₀. The latter cross section was earlier found to be 36 ?². The dramatic increase of the cross section with fullerene size is explained by means of the curve crossing model for electron transfer.     

Polymerization of solid C<Subscript>60</Subscript> under C<Stack><Subscript>60</Subscript><Superscript>+</Superscript></Stack> cluster ion bombardment

The structure transformation occurring in fullerene film under bombardment by 50 keV C₆₀⁺ cluster ions is reported. The Raman spectra of the irradiated C₆₀ films reveal a new peak rising at 1458 cm⁻¹ with an increase in the ion fluence. This feature of the Raman spectra suggests linear polymerization of solid C₆₀ induced by the cluster ion impacts. The aligned C₆₀ polymeric chains composing about 5–10 fullerene molecules have been distinguished on the film surface after the high-fluence irradiation using atomic force microscopy (AFM). The surface profiling analysis of the irradiated films has revealed pronounced sputtering during the treatment. The obtained results indicate that the C₆₀ polymerization occurs in a deep layer situated more than 40 nm below the film surface. The deep location of the C₆₀ polymeric phase indirectly confirms the dominant role of shock waves in the detected C₆₀ phase transformation.     

The interaction of fast H 3 + ions with a clean Ni-surface

Scattering of H ₃ ⁺ ions from a clean Ni(111) surface is observed at energies below 1 keV and grazing incidence in a time-of-flight system. The interaction with the surface leads to neutral particles mainly which are identified from the energy distributions as H and H₂. The neutralisation/dissociation mechanism is probably a resonant charge transfer of Ni electrons into the non-binding ground state of H₃.     

Molecular ion emission from single large cluster impacts

We investigated the emission of the secondary ions stimulated by single impacts of 136 keV Au₄₀₀⁴⁺ projectiles. The study was carried out on targets of glycine, phenylalanine, and C₆₀. In addition, a target of C₆₀ was examined with 18 keV C₆₀⁺ projectiles. The experiments were performed in the event-by-event bombardment/detection mode. The secondary ions were identified with linear time-of-flight mass spectrometer equipped with an 8-anode detector. The Au₄₀₀⁴⁺ projectile induces abundant multi-ion emission, for instance the average number of detected ions (atomic, fragment, molecular and cluster ions) emitted per event from glycine target is 12.5. The glycine intact molecular ion (Gly⁻) yield is 1.14. The bombardment of a C₆₀ target results in the efficient emission of multiple intact C₆₀⁻ (total yield is 0.15).     

Electron detachment and fragmentation in collisions between 1.25 keV/carbon and clusters and

The destruction cross-section for 22.5 and 50 keV C^1- , for 10 and 50 keV C₈ ^1- and for 50 and 75 keV C₆₀ ^1- clusters in collisions with H₂ has been measured by an attenuation method. The destruction of the cluster anions is dominated by electron detachment rather than fragmentation and is of the order of the geometric cross-section. The cross-sections vary little with bombarding energy. Received: 16 September 1998 / Received in final form: 23 February 1999