掺Er/Er+O的GaN薄膜光学性质的研究

利用Raman散射谱研究了GaN注Er以及Er+O共注样品的振动模，并讨论了共注入O对Er离子发光的影响. 在Raman散射谱中，对于注Er的GaN样品出现了300 cm^-1和670 cm^-1两个新的Raman峰，而对于Er+O共注样品，除了上述两个峰外，在360 cm^-1处出现了另外一个新的峰，其中300 cm^-1峰可以用disorder-activated Raman scattering (DARS)来解释，670 cm^-1峰是由于与N空位相关的缺陷引起的，而360 cm^-1峰是由O注入引起的缺陷络合物产生的. 由于360 cm^-1模的缺陷出现，从而导致Er+O共注入GaN薄膜红外光致发光(PL)强度的下降. 关键词： GaN Er Raman散射 光致发光

Study on optical properties of Er/Er+O doped GaN thin films

We extend the use of Raman spectroscopy to investigate the modes of Er-implanted and Er+O co-implanted GaN, and discuss the influence of O ions on Er³⁺-related infrared photoluminescence (PL). It is found that Er³⁺ implantation introduces new Raman peaks in Raman spectra at frequencies 300 and 670 cm^-1, and one additional new peak at 360cm^-1 is introduced after Er+O implantation. It is proposed that the broad structure around 300 cm^-1 mode originates from disorder-activated scattering (DARS). The Raman peak at 670 cm^-1 is assigned to nitrogen vacancy related defects. The 360 cm^-1 peak is attributed to the O implantation induced defect complexes (vacancies, interstitial, or anti-sites in the host). The appearance of the 360 cm^-1 mode results in the decrease of the Er³⁺-related infrared PL of GaN:Er+O.