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1.
杨志清  王飞利  林常规 《物理学报》2013,62(18):184211-184211
实现玻璃微晶化过程控制的基础是要充分认识其析晶行为及动力学机理. 利用示差扫描量热法和析晶热处理等手段, 研究发现 20GeS2·80Sb2S3硫系玻璃属于表面析晶, 在268℃(Tg+30℃)下热处理60 h, 可以获得表面约40 μm的Sb2S3晶层复合玻璃陶瓷样品. 在此基础上, 利用非等温法从理论上分析该玻璃的析晶动力学机理. 计算得到其析晶活化能Ec为(223.6±24.1)kJ·mol-1, 在热处理温度(268℃)下的析晶速率常数K为1.23×10-4 s-1, 属于较难析晶的玻璃组成; 玻璃的晶体生长指数m和晶体生长维数n均为2, 表明其Sb2S3相的析晶行为是二维生长过程, 与析晶实验结果完全相符. 由此可知, 对于Sb2S3晶体复合的硫系玻璃陶瓷样品可通过玻璃粉末压片烧结、带铸法或丝网印刷法制备获得, 为今后功能硫系玻璃的开发提供实验依据和理论指导. 关键词: 硫系玻璃 微晶化 析晶动力学 析晶行为  相似文献   

2.
Sb2Se3是一种低成本、环境友好、具有良好应用前景的光伏材料.目前Sb2Se3太阳能电池的光电转换效率已经提高到了10%.载流子复合动力学是决定Sb2Se3太阳能电池光电转换效率的关键因素.本文利用飞秒时间分辨表面瞬态反射谱详细分析了Sb2Se3表面、Sb2Se3/CdS界面载流子复合动力学过程.根据相对反射率变化?R/R的演化,得到Sb2Se3载流子热化、带隙收缩时间约为0.2—0.5 ps,估计热载流子冷却时间为3—4 ps.还实验证实在Sb2Se3/CdS界面处存在自由电子转移和浅束缚电子转移两种电子转移过程.本文提供了Sb2Se3表面瞬态反射谱分析方法,所得实验结果拓展了对Sb2Se3表...  相似文献   

3.
许思维  王丽  沈祥 《物理学报》2015,64(22):223302-223302
用拉曼散射光谱和X射线光电子能谱研究了GexSb20Se80-x(x=5 mol%, 10 mol%, 15 mol%, 17.5 mol%, 20 mol%和25 mol%)玻璃的结构. 通过对拉曼光谱和X射线光电子能谱(Ge 3d, Sb 4d 和Se 3d谱)进行分解, 发现当硫系玻璃处于富Se状态下时, 玻璃结构中会出现Se–Se–Se结构单元, 其数量随着Ge含量的增加而迅速减少, 并最终在Ge15Sb20Se65玻璃结构中消失; Ge和Sb原子分别以GeSe4/2 四面体和SbSe3/2三角锥结构单元在玻璃结构中出现, GeSe4/2四面体结构单元的数量会随着Ge浓度的增加而增加, 而SbSe3/2三角锥结构单元的数量基本保持稳定. 另一方面, 在缺Se的硫系玻璃中, 玻璃会有Ge–Ge和Sb–Sb同极键产生, 随着Ge含量的增大, 这种同极键的数量会越来越多; 而GeSe4/2四面体和SbSe3/2三角锥结构的数量则相应减少. 在所有玻璃样品的结构中均有同极键Se–Se的存在. 当玻璃组分越接近完全化学计量配比时, 异质键Ge–Se和Sb–Se将占据玻璃结构中的主导地位, 同极键Ge–Ge, Sb–Sb和Se–Se 的比例降为最小.  相似文献   

4.
硒化锑(Sb2Se3)是一种元素丰富、经济且无毒的太阳电池吸收层材料.太阳电池的性能在很大程度上取决于载流子的传输特性,然而在Sb2Se3中,这些特性尚未得到很好的理解.通过密度泛函理论和形变势理论,本文对纯Sb2Se3以及掺杂了As, Bi的Sb2Se3的空穴传输特性进行研究,计算并分析了影响迁移率的3个关键参数:有效质量、形变势和弹性常数.结果显示,有效质量对迁移率具有最大影响,掺杂Bi的Sb2Se3表现出最高的平均迁移率.同时发现, Sb2Se3的空穴迁移率呈现出明显的各向异性,其中x方向的迁移率远高于y,z方向,这应该与x方向的原子主要以较强的共价键连接,而y, z方向以较弱的范德瓦耳斯力连接有关.载流子传输能力强的方向有助于有效传输和收集光生载流子,本研究从理论上强调了控制Sb2Se3...  相似文献   

5.
林常规  李卓斌  覃海娇  倪文豪  李燕颖  戴世勋 《物理学报》2012,61(15):154212-154212
硫系玻璃晶化过程中析出晶相的控制是硫系玻璃陶瓷制备中的一个重要环节. 在制得的65GeS2·25Ga2S3·10CsI(GGC25)和70GeS2·20Ga2S3·10CsI(GGC20)玻璃和玻璃陶瓷基础上, 利用可见—近红外透过光谱, SEM, XRD, Raman光谱等测试技术表征了其透过性能、晶粒尺寸、晶相类型等信息. 研究发现在这两组玻璃样品中少量的组分差别就能导致其显著的析晶行为改变: GGC20玻璃在热处理过程中析出的是GeS2晶体; GGC25样品则拥有两步析晶过程, 其率先析出Ga2S3, 而后才有GeS2晶体出现. 此外, 研究讨论了这种析晶行为与组成的依赖关系及其与玻璃网络结构之间联系, 可为今后硫系玻璃的可控晶化研究提供实验依据和理论指导.  相似文献   

6.
刘军芳  苏良碧  徐军 《物理学报》2013,62(3):37804-037804
采用高温熔融法制备了xBi2O3-50B2O3-(50-x)BaO玻璃, 测定了样品玻璃的近红外光区的发射谱、荧光寿命以及Raman光谱. 在808 nm波长光的激发下, 50Bi2O3-50B2O3二元玻璃中未观察到近红外发光; 随体系中BaO的加入, 当x为40, 45以及49时, 玻璃样品中观察到了近红外宽带发光现象; BaO含量进一步增加, 当x=10–30时, 近红外发光现象消失; 而当玻璃中Bi浓度很低时, 在0.5Bi2O3-50B2O3-50BaO及1Bi2O3-50B2O3-50BaO玻璃中发现了近红外发光现象, 且存在多个发光峰. 对铋离子近红外发光机理进行了初步的探讨.  相似文献   

7.
薛丁江  石杭杰  唐江 《物理学报》2015,64(3):38406-038406
硒化锑(Sb2Se3)是一种二元单相化合物, 原料储量大、毒性低、价格便宜; 同时其禁带宽度合适(~1.15 eV), 吸光系数大(>105 cm-1), 长晶温度低, 非常适合制作新型低成本低毒的薄膜太阳能电池, 理论光电转换效率可达30%以上. 目前文献报道的Sb2Se3薄膜太阳能电池效率已达3.7%, 初步证明了Sb2Se3材料在薄膜太阳能电池应用方面的巨大潜力. 本文综述了近年来Sb2Se3太阳能电池的研究进展, 着重介绍了Sb2Se3的材料特性和薄膜制备及相关理论研究, 阐述了不同结构电池器件的研究进展, 并对其发展趋势进行了展望.  相似文献   

8.
制备了一系列碲铌酸盐玻璃85TeO2-(15-x)Nb2O5-xB2O3-1%Er2O3(TNBx=0, 3, 6, 9, 12, 15).根据Judd-Ofelt(J-O)和McCumber理论,讨论和分析了B2O3含量对掺铒碲铌酸盐玻璃热稳定性及光谱性质影响.研究发现,玻璃开始析晶温度和玻璃转变温度差值ΔT(Tx-Tg),J-O强度参数,FWHM和峰值受激发射截面的乘积在B2O3引入摩尔分数为9%时达到最大值.同时,Er3+:4I13/2能级寿命也随着B2O3含量的增加而单调增加.结果表明,在掺铒碲铌玻璃中,适量的B2O3能较好地提高玻璃的热稳定性能和Er3+离子的光谱性质.  相似文献   

9.
采用传统熔融-淬冷法制备了一系列新型(100-x)(4GeSe2-In2Se3)-xAgI(x=20,30,40mol%)硫系玻璃样品.利用X射线衍射分析、差热分析、可见-近红外吸收光谱、红外透过光谱、喇曼分析等技术手段研究了该玻璃系统的组成、结构、热稳定性和光学特性等.利用Tauc方程计算出了样品的间接带隙;测试了部分样品在不同升温速率下的差示扫描量热曲线,并采用Kissinger法计算了玻璃样品的析晶活化能.X射线衍射数据表明,该玻璃体系在较宽的组分范围内有良好的非晶特性,成玻范围较宽;差热分析和析晶动力学研究表明,玻璃样品70(4GeSe2-In2Se3)-30AgI具有较好的热稳定性(ΔT=114℃)和较高的活化能(Ea=320.4kJ/mol).随着AgI含量的增加,玻璃的短波吸收限蓝移,并且光学带隙有增大的趋势.此外,红外透过光谱分析表明该玻璃体系具有良好的红外透过性能,其红外截止波长不会随着AgI含量的增加而发生明显变化,皆为16μm左右.  相似文献   

10.
用熔融淬冷法制备了系列掺杂浓度的Dy3+:Ge-Ga-S-CsI硫卤玻璃样品,测试了样品拉曼光谱、折射率、吸收光谱、近红外及中红外荧光谱.应用Judd-Ofelt理论计算了Dy3+离子的强度参数 (Ωi, i=2,4,6)、自发辐射跃迁概率(A)、荧光分支比(β)、以及辐射寿命(τrad)等光谱参数.研究了810 nm激光抽运下样品中红 关键词: 硫系玻璃 中红外发光 3+掺杂')" href="#">Dy3+掺杂 多声子弛豫  相似文献   

11.
Bismuth telluride(Bi_2Te_3) based alloys, such as p-type Bi_(0.5)Sb_(1.5)Te_3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi_(0.48)Sb_(1.52)Te_3 bulk materials with MnSb_2Se_4 were prepared using high-energy ball milling and spark plasma sintering(SPS) process. The addition of MnSb_2Se_4 to Bi_(0.48)Sb_(1.52)Te_3 increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb_2Se_4 and Bi_(0.48)Sb_(1.52)Te_3 were observed in the Bi_(0.48)Sb_(1.52)Te_3 matrix. The nanoparticles in the semi-coherent second phase of MnSb_2Se_4 behaved as scattering centres for phonons,yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi_(0.48)Sb_(1.52)Te_3 by adding an Mn_(0.8)Cu_(0.2)Sb_2Se_4(2mol%) sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to ~40% improvement over its Bi_(0.48)Sb_(1.52)Te_3 counterpart. Such enhancement of the thermoelectric(TE) performance of p-type Bi_2Te_3 based materials is believed to be advantageous for practical applications.  相似文献   

12.
We fabricated Sb_2 Se_3 thin film solar cells using tris(8-hydroxy-quinolinato) aluminum(Alq_3) as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine(NPB) was used as a hole transport layer.We took ITO/NPB/Sb_2Se_3/Alq_3/Al as the device architecture.An open circuit voltage(V_(oc)) of 0.37 V,a short circuit current density(J_(sc)) of 21.2 mA/cm~2,and a power conversion efficiency(PCE) of 3.79% were obtained on an optimized device.A maximum external quantum efficiency of 73% was achieved at 600 nm.The J_(sc),V_(oc),and PCE were dramatically enhanced after introducing an electron transport layer of Alq_3.The results suggest that the interface state density at Sb_2 Se_3/Al interface is decreased by inserting an Alq_3 layer,and the charge recombination loss in the device is suppressed.This work provides a new electron transport material for Sb_2Se_3 thin film solar cells.  相似文献   

13.
We experimentally demonstrate a femtosecond mode-locked thulium-holmium(Tm-Ho) co-doped fiber laser incorporating a saturable absorber(SA) based on a bulk-structured bismuth selenide(Bi_2Se_3) topological insulator(TI). The SA was prepared by depositing a mechanically exfoliated Bi_2Se_3 TI layer onto a side-polished optical fiber platform. Unlike high-quality nano-structured Bi_2Se_3 TI-based SA, bulk-structured Bi_2Se_3 with non-negligible oxidation was used as a saturable absorption material for this experimental demonstration due to its easy fabrication process. The saturation power and modulation depth of the prepared SA were measured to be ~ 28.6 W and ~13.4%, respectively. By incorporating the prepared SA into a Tm-Ho co-doped fiber ring cavity, stable soliton pulses with a temporal width of ~ 853 fs could be generated at 1912.12 nm. The 3-dB bandwidth of the mode-locked pulse was measured to be ~4.87 nm. This experimental demonstration reaffirms that Bi_2Se_3 is a superb base material for mid-infrared passive mode-locking even under oxidation.  相似文献   

14.
By using scanning tunneling microscope/microscopy(STM/STS), we reveal the detailed electronic structures around the sharp edges and strained terraces of lateral monolayer-bilayer Pd2Se3 heterostructures. We find that the edges of such heterostructures are well-defined zigzag type. Band bending and alignment are observed across the zigzag edge, forming a monolayer-bilayer heterojunction. In addition, an n-type band bending is induced by strain on a confined bilayer Pd2Se3 terrace. These results provide effective toolsets to tune the band structures in Pd2Se3-based heterostructures and devices.  相似文献   

15.
Two-dimensional(2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research,magnetic tunneling junctions(MTJs) based on X Se_2(X = Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance(TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe_2. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias.The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer X Se_2(X = Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.  相似文献   

16.
Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films   总被引:1,自引:0,他引:1       下载免费PDF全文
刘波  宋志棠  张挺  封松林  Chen Bomy 《中国物理》2004,13(11):1947-1950
Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous -Te--Te- stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb-Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb-Sb (Te_2) and (Sb_2) Sb-Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb-Sb (Te_2).  相似文献   

17.
In this review article, the recent experimental and theoretical research progress in Bi_2Se_3-and Bi_2Te_3-based topological insulators is presented, with a focus on the transport properties and modulation of the transport properties by doping with nonmagnetic and magnetic elements. The electrical transport properties are discussed for a few different types of topological insulator heterostructures, such as heterostructures formed by Bi_2Se_3-and Bi_2Te_3-based binary/ternary/quaternary compounds and superconductors, nonmagnetic and magnetic metals, or semiconductors.  相似文献   

18.
The ternary topological insulators Bi_2Se_(3-x)Te_x have attracted a great deal of attention due to their exotic physical and chemical properties.While most of the studies focus on the properties of these ternary TIs,limited research was performed to investigate the dynamic atomic stack of its crystal structure.We prepared highquality Bi_2Se_(3-x)Te_x thin films on Ga As(111)B substrates using molecular beam epitaxy,characterized with Raman spectroscopy,x-ray diffraction and photoelectron spectroscopy.It is found that when Se is replaced by Te,the preferred substituting sites are the middle layer at 0x1,and this is also valid for Se substituting Te at 2x3.In the middle region,the substituting atoms prefer to go to the first and the fifth layer.  相似文献   

19.
《中国物理 B》2021,30(9):97601-097601
Two-dimensional(2 D) magnetic materials have aroused tremendous interest due to the 2 D confinement of magnetism and potential applications in spintronic and valleytronic devices. However, most of the currently 2 D magnetic materials are achieved by the exfoliation from their bulks, of which the thickness and domain size are difficult to control, limiting the practical device applications. Here, we demonstrate the realization of thickness-tunable rhombohedral Cr_2Se_3 nanosheets on different substrates via the chemical vapor deposition route. The magnetic transition temperature at about 75 K is observed. Furthermore, van der Waals heterostructures consisting of Cr_2Se_3 nanosheets and monolayer WS_2 are constructed.We observe the magnetic proximity effect in the heterostructures, which manifests the manipulation of the valley polarization in monolayer WS_2. Our work contributes to the vapor growth and applications of 2 D magnetic materials.  相似文献   

20.
The Zintl compound Mg_3Sb_2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly characteristics.However,the intrinsically p-type Mg_3Sb_2 shows low figure of merit(z T = 0.23 at 723 K) for its poor electrical conductivity.In this study,a series of Mg_(3-x)Li_xSb2 bulk materials have been prepared by high-energy ball milling and spark plasma sintering(SPS) process.Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample,which can be essentially attributed to the increased carrier concentration,leading to a maximum z T of0.59 at 723 K with the optimum doping level x = 0.01.Additionally,the engineering z T and energy conversion efficiency are calculated to be 0.235 and 4.89%,respectively.To our best knowledge,those are the highest values of all reported p-type Mg_3Sb_2-based compounds with single element doping.  相似文献   

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