PREPARATION OF a-AXIS ORIENTED YBa2Cu3Ox THIN FILMS

The a-axis oriented YBa₂Cu₃O_x(YBCO) thin films could be grown on (100) SrTiO₃(STO) substrates with STO buffer layers by dc and rf magnetron sputtering either by low-ering the deposition temperature, or by using a self-template technique. For the latter, the resistivity of the thin film at 290K along the substrate [001] direction is about four times larger than that in the [010] direction. The zero resistance temperatures T_c0 are 89 K in both directions. So high quality a-axis oriented YBCO thin films can be prepared by the self-template technique. Also the T_c0 increase monotonously with the reduction of the thickness of the YBCO seed layer.     

Microstructure and transport properties of various 90° grain boundaries in YBa2Cu3O7 thin films

The microstructure and transport properties of various 90° grain boundaries in (103) oriented YBa₂Cu₃O₇(YBCO) thin films grown epitaxially in situ by 90° off-axis sputtering are compared. The (103) films grown on (101) LaAlO₃ and (101) SrTiO₃ substrates have specific sets of 90° grain boundaries in both principal in-plane directions: 90° [010] twist boundaries along the [101] direction, and 90° [010] symmetrical tilt boundaries and 90° [010] basal-plane-faced tilt boundaries along the (301) direction. No weak-link behavior is observed across some of these boundaries by transport critical current density and normalized magnetic field dependence of J _c measurements along both those in-plane directions. High-resolution transmission electron microscopy reveals variations in the structure and microfaceting of the 90° boundaries, which may contribute to the absence of weak-link behavior. These results have important implications for understanding the behavior of step-edge Josephson junctions.     

Quasi-static electric field–temperature diagrams in epitaxial relaxor ferroelectric films

Quasi-static polarization induced by dc electric field was studied in a broad range of temperatures in epitaxial films of relaxor ferroelectric PbMg_1/3Nb_2/3O₃ and PbSc_1/2Nb_1/2O₃. The electric field was applied and the response was measured along the out-of-plane <100> crystal direction of the epitaxial perovskite-structure (001) oriented films. The films remained in the relaxor state in zero-field cooling. A new polar state can be induced by electric field at a critical temperature below 100 K. The critical field and the induced polarization increased on cooling and reached the bulk-like values at 20 K. The orientational anisotropy of thin-film dipolar systems is discussed as a possible reason for the observed stable relaxor state.     

C-oriented SrBi2Nb2O9 films grown on YBa2Cu3O7−δ /SrTiO3 and NdGaO3

Epitaxial SrBi₂Nb₂O₉ films were grown by laser ablation on (001)YBa₂Cu₃O_7?δ /(100)SrTiO₃ and (001)NdGaO₃, with c axis normal to the substrate plane. The SrBi₂Nb₂O₉ films were grown in a layer-by-layer regime on NdGaO₃ substrates in 25-Å steps at a condensation temperature of 700 °C. Microinclusions of secondary phases and a-oriented grains were observed to exist on the surface of (001)SrBi₂Nb₂O₉ films grown on (001)YBa₂Cu₃O_7?δ /(100)SrTiO₃. The dielectric permittivity of the SrBi₂Nb₂O₉ films measured along the c axis is 123 (T=300 K, f=100 kHz), and tan δ≈0.04.     

Phase‐controlled epitaxial growth of iron oxide thin films on MgO(001) and LaAlO3(001) substrates

We have deposited epitaxial iron oxide thin films on MgO(001) and LaAlO₃(LAO)(001) substrates, resulting in different phase stabilities. Atomic force microscopy images revealed a smooth surface. Detailed X‐ray diffraction (XRD) measurements were performed to confirm the epitaxial growth and to analyze the atomic growth configuration. We found that (00l) oriented γ‐Fe₂O₃ was the stable phase on MgO(001) substrates, whereas $ (1\bar 102) $ oriented α‐Fe₂O₃ was stable on LAO(001). Magnetic hysteresis loop measurements revealed typical ferrimagnetic behavior for γ‐Fe₂O₃ on MgO, whereas the magnetization of α‐Fe₂O₃ on LAO was relatively small and consistent with an antiferromagnetic order. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and magnetic properties of layered Ca<Subscript>3</Subscript>Co<Subscript>4</Subscript>O<Subscript>9</Subscript> thin films

Layered cobalt oxides Ca₃Co₄O₉ thin films have been grown directly on c-cut sapphire substrates using pulsed laser deposition. X-ray diffraction and transmission electron microscopy characterizations show that the deposited films present the expected monoclinic structure and a texture along the direction perpendicular to the Al₂O₃(001) plane. The Ca₃Co₄O₉ structure presents six variants in the film plane. Rutherford backscattering spectroscopy shows that the films are stoichiometric and that the film thickness agrees with the nominal value. The susceptibility χ of the films, recorded along the c-axis of the substrate, after field cooling and zero field cooling in an applied field of 1 kOe shows two magnetic transitions at 19 and 370 K which agree well with previous findings on single crystal samples. In turn, at low temperature (5 K), the magnetization curve along the c-axis exhibits coercive field and remanent magnetization much smaller than those reported for bulk samples, which can be related to the influence of structural variants and structural defects.     

Transverse Seebeck effect in Bi2Sr2CaCu2O8

2 Cu₃O₇ has been observed in “off-c-axis” grown Bi₂Sr₂CaCu₂O₈ films. The films were prepared by pulsed laser deposition from Bi₂Sr₂CaCu₂O₈ targets and grown with a tilt angle of 10 degrees between the film c-axis and the film surface on off-axis cut SrTiO₃ substrates. From the thermoelectric response upon laser irradiation the anisotropy of the thermopower is estimated. Received: 15 April 1996/ Accepted:19 November 1996     

La0.8Ca0.2MnO3/SrTiO3薄膜厚度对其结构及磁学性能的影响

采用多种X射线衍射技术和磁电阻测量技术研究了不同厚度的La_0.8Ca_0.2MnO₃/SrTiO₃ (LCMO/STO)薄膜的应变状态及其对磁电阻性能的影响.结果表明，在STO(001)单晶衬底上生长的LCMO薄膜沿［00l］取向生长.LCMO薄膜具有伪立方钙钛矿结构，随着薄膜厚度的增加，面内晶格参数增加，垂直于面内的晶格参数减小,晶格参数a和b相近，略小于c.LC 关键词： X射线衍射 微结构 应变 物理性能     

Tuning the growth orientation of NiFe2O4 films by appropriate underlayer selection

We have grown NiFe₂O₄ thin films on (001)-oriented SrTiO₃ and (001)-oriented Pt underlayers. Although these two templates present a similar lattice mismatch with NiFe₂O₄ (about -6%), the ferrite grows cube-on-cube with a (001) orientation on SrTiO₃ and (111)-textured on Pt, with four different in-plane variants. This evidences that the interface energy between NiFe₂O₄ and Pt or SrTiO₃ is the key parameter ruling the film texture, while the elastic energy appears as a second-order factor. We compare the structural and magnetic properties of these two films and discuss possible applications of our findings. PACS 68.55.Jk; 75.50.Gg     

Growth of thin, crystalline oxide, nitride, and oxynitride films on NiAl and CoGa surfaces

At 300 K, an amorphous Al-oxide film is formed on NiAl(001) upon oxygen adsorption. Annealing of the oxygen-saturated NiAl(001) surface to 1200 K leads to the formation of thin well-ordered θ-Al₂O₃ films. At 300 K, and low-exposure oxygen atoms are chemisorbed on CoGa(001) on defects and on step edges of the terraces. For higher exposure up to saturation, the adsorption of oxygen leads to the formation of an amorphous Ga-oxide film. The EEL spectrum of the amorphous film exhibits two losses at ≈400 and 690 cm^-1. After annealing the amorphous Ga-oxide films to 550 K thin, well-ordered β-Ga₂O₃ films are formed on top of the CoGa(001) surface. The EEL spectrum of the β-Ga₂O₃ films show strong Fuchs-Kliewer (FK) modes at 305, 455, 645, and 785 cm^-1. The β-Ga₂O₃ films are well ordered and show (2×1) LEED pattern with two domains, oriented perpendicular to each other. The STM study confirms the two domains structure and allows the determination of the two-dimensional lattice parameters of β-Ga₂O₃. The vibrational properties and the structure of β-Ga₂O₃ on CoGa(001) and θ-Al₂O₃ on NiAl(001) are very similar. Ammonia adsorption at 80 K on NiAl(111) and NiAl(001) and subsequent thermal decomposition at elevated temperatures leads to the formation of AlN. Well-ordered and homogeneous AlN thin films can be prepared by several cycles of ammonia adsorption and annealing to 1250 K. The films render a distinct LEED pattern with hexagonal [AlN/NiAl(111)] or pseudo-twelve-fold [AlN/NiAl(001)] symmetry. The lattice constant of the grown AlN film is determined to be a_AlN= 3.11 Å. EEL spectra of AlN films show a FK phonon at 865 cm^-1. The electronic gap is determined to be E_g= 6.1±0.2 eV. GaN films are prepared by using the same procedure on the (001) and (111) surfaces of CoGa. The films are characterized by a FK phonon at 695 cm^-1 and an electronic band gap E_g= 3.5±0.2 eV. NO adsorption at 75 K on NiAl(001) and subsequent annealing to 1200 K leads to the formation of aluminium oxynitride (AlON). An oxygen to nitrogen atomic ratio of ≈2:1 was estimated from the analysis of AES spectra. The AlON films shows a distinct (2×1) LEED pattern and the EEL spectrum exhibits characteristic Fuchs-Kliewer modes. The energy gap is determined to be E_g= 6.6±0.2 eV. The structure of the AlON film is derived from that of θ-Al₂O₃ formed on NiAl(001). Received: 21 March 1997/Accepted: 12 August 1997     

Structural properties of high-quality sputtered Fe films on Al2O3(1120) and MgO(001) substrates

High-quality thin Fe films were deposited on MgO(001) and Al₂O₃(1120) substrates in the thickness range from 7 to 50 nm. The structural properties have been studied by out-of-plane and in-plane X-ray scattering experiments. From the out-of-plane measurements the electron density profile was determined together with interface and surface roughness parameters. Fe on Al₂O₃ grows along the [110]-direction with a structural coherence length comprising about the total film thick ness and a very small mosaicity. From in-plane scattering experiments a three-domain structure was observed. On MgO(001) substrates Fe grows in the [001]-direction, with the Fe [100]-axis parallel to the MgO [110]-axis. On both substrates, the Fe films exhibit a very small surface and interface roughness, indicative for a high quality of the sputtered samples.     

Epitaxial growth of high-Tc superconducting Tl-Ca-Ba-Cu-O films by liquid phase epataxial process

Tl-Ca-Ba-Cu-O epitaxial films have been successfully grown on (001) MgO substrate by liquid phase epitaxial (LPE) process. The as-grown films showed an onset of superconductivity at about 140 K and zero resistance at 111 K. X-ray diffraction analysis suggests the films to be highly preferentially oriented with the c-axis perpendicular to the film surface. Observation from transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) revealed the presence of both Tl-Ca₂Ba₂Cu₃O_y and TlCa₂Ba₃Cu₄O_y phases.     

Structure and properties of CaNb2O6:Sm3+ thin films by pulsed laser deposition

CaNb₂O₆:Sm³⁺ films were prepared on quartz glass and α-Al₂O₃(001) substrates by pulsed laser deposition. The structural, morphological, and optical properties of the CaNb₂O₆:Sm³⁺ films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), emission-scan electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and photoluminescence spectroscopy (PL) measurements. The results show that the structure and properties of CaNb₂O₆:Sm³⁺ films were dependent on substrates. The CaNb₂O₆:Sm³⁺ films on Al₂O₃(0001) substrate have better crystallinity. The full-width at half-maximum (FWHM) of (131) peak are 0.45 and 0.32 for the CaNb₂O₆:Sm³⁺ film on glass and Al₂O₃(001), respectively. The crystallite size of CaNb₂O₆:Sm³⁺ films grown on glass and Al₂O₃(001) was about 8.22 and 9.98 nm, respectively. The oxidation state of the Sm element on the films was Sm³⁺ state. The photoluminescence (PL) spectra were measured at room temperature, the CaNb₂O₆:Sm³⁺ films on Al₂O₃(001) substrate have a better PL intensity, the identified emission bands were by the intra 4f transitions of Sm³⁺ from the excited level to the lower levels at 567 nm for ⁴G_5/2→⁶H_5/2 transition, at 609 nm for ⁴G_5/2→⁶H_7/2 transition, and at 657 nm for ⁴G_5/2→⁶H_9/2 transition.     

Amorphous Er2O3 films for antireflection coatings

This paper reports that stoichiometric, amorphous, and uniform Er2O3 films are deposited on Si(001) substrates by a radio frequency magnetron sputtering technique. Ellipsometry measurements show that the refractive index of the Er2O3 films is very close to that of a single layer antireflection coating for a solar cell with an air surrounding medium during its working wavelength. For the 90-nm-thick film, the reflectance has a minimum lower than 3% at the wavelength of 600 nm and the weighted average reflectances (400-1000 nm) is 11.6%. The obtained characteristics indicate that Er2O3 films could be a promising candidate for antireflection coatings in solar cells.     

Structure and morphology of the reaction fronts during the formation of MgAl2O4 thin films by solid state reaction between R-cut sapphire substrates and MgO films

The thin-film spinel-forming solid state reaction between Al₂O₃ and MgO has been studied under initially non-coherent conditions. MgO films in (001) orientation on -cut sapphire single crystals were heated at 1100°C for 30 min or 1h. The film/substrate reaction proceeds via cation counterdiffusion as was revealed by a marker experiment. The MgAl₂O₄ films formed were predominantly (001) oriented, with an additional systematic tilt of about 5° of the spinel lattice around the [010] axis. The structure of the Al₂O₃ /MgAl₂O₄(001) and MgAl₂O₄(001)/MgO(001) reaction fronts has been investigated on cross section samples by high-resolution electron microscopy. It appeared that after starting from an incoherent interface, the Al₂O₃ /MgAl₂O₄(001) front assumes an almost fully coherent structure during the reaction. As a result the lattice misfit is reduced to 1%, and interfacial ledges are formed. The latter most probably play an active role in the necessary c.p.h. f.c.c. reconstruction of the oxygen sublattice. The MgAl₂O₄(001)/MgO(001) reaction front consists of coherent regions divided by misfit dislocations. During the reaction the former run ahead whereas the latter lag behind. As a result the morphology of the reaction front is bowed. The results confirm earlier observations of Carter and Schmalzried of the semicoherent Al₂O₃(00.1)/CoAl₂O₄(111) interface, thus strongly supporting the conclusion of a fundamental new phase transformation mechanism specific to oxide systems.Presented at the workshop on High-Voltage and High-Resolution Electron Microscopy, February 21–24, 1994, Stuttgart, Germany.     

Hydrothermal synthesis of Sb2O3 nanorod-bundles via self-assembly assisted oriented attachment

Sb₂O₃ nanorod-bundles with length of about 4 μm were fabricated in the presence of polyvinyl alcohol (PVA) by a simple hydrothermal method. The composition, morphology, microstructure and optical property of the as-prepared bundles were characterized by XRD, XPS, SEM, TEM and Raman spectrum. The results showed that the nanorod-bundles were composed of massive orthorhombic phase Sb₂O₃ nanorods grown along [0 0 1] direction. It was speculated that the nanorod-bundles developed through self-assembly of initially scattered nuclei into microdisks and subsequent oriented attachment process. PVA played a crucial role in the formation of Sb₂O₃ nanorod-bundles.     

Effect of thickness on the structural,optical and electrical properties of thermally evaporated PbI2 thin films

This work describes the physical properties of lead iodide (PbI₂) thin films with different thicknesses that were deposited on ultrasonically cleaned glass substrates using a thermal evaporation technique at 5×10^-6 torr. The initial material was purified by the zone refining technique under an atmosphere of argon gas. XRD analysis of the material demonstrates that the thin films were preferably oriented along the (001) direction. The size of the crystallites was calculated from the Scherer relation and found to be in the range of ～5–10 nm, with higher values being observed for increasing film thicknesses. The optical energy band gaps were evaluated and determined to belong to direct transitions. Because the band gap increased with decreasing film thickness, a systematic blue shift was observed. The surface morphologies of PbI₂ films exhibited a clear increase in grain size with increasing film thickness. The photoluminescence and dc conductivity of the thin films are also discussed.     

Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric

Atomic layer deposited (ALD) Al₂O₃/dry-oxidized ultrathin SiO₂ films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al₂O₃/SiO₂, Al₂O₃, and SiO₂) are fabricated and compared with each other. The I-V measurements show that the Al₂O₃/SiO₂ stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO₂, and a relatively low gate leakage current of 1× 10^-7 A/cm² at electric field of 4 MV/cm comparable to Al₂O₃. The 1-MHz high frequency C-V measurements exhibit that the Al₂O₃/SiO₂ stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.     

Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films

Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive evaporation.This paper reports the evolution of the structure,morphology and electrical characteristics with annealing temperatures in an oxygen ambience.X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 C.The capacitance in the accumulation region of Er 2 O 3 films annealed at 450 C is higher than that of as-deposited films and films annealed at other temperatures.An Er 2 O 3 /ErO x /SiO x /Si structure model is proposed to explain the results.The annealed films also exhibit a low leakage current density (around 1.38 × 10 4 A/cm 2 at a bias of 1 V) due to the evolution of morphology and composition of the films after they are annealed.     

Multiferroic behaviour of epitaxial NiFe2O4--BaTiO3 heterostructures

Multiferroic NiFe2O4 （NFO）-BaTiO3 （BTO） bilayered thin films are epitaxially grown on （001） Nb-doped SrTiO3 （STO） substrates by pulsed-laser deposition （PLD）. Different growth sequences of NFO and BTO on the substrate yield two kinds of epitaxial heterostructures with （001）-orientation, i.e. （001）-NFO/（001）-BTO/substrate and （001）- BTO/（001）-NFO/substrate. Microstructure studies from x-ray diffraction （XRD） and electron microscopies show differences between these two heterostructures, which result in different multiferroic behaviours. The heterostructured composite films exhibit good coexistence of both ferroelectric and ferromagnetic properties, in particular, obvious magnetoelectric （ME） effect on coupling response.