KDP晶体飞切加工表面缺陷的抑制方法

研究了磷酸二氢钾(KDP)晶体表面典型缺陷的形成原因及抑制方法。通过飞切加工及表面染色切削实验证明了成因分析结果的正确性,进一步明确了KDP晶体表面缺陷的形成过程。建立了适用于描述KDP晶体表面缺陷形成过程的理论模型,提出了获得无缺陷晶体表面的工艺条件。对飞切加工参数及刀具结构进行了优化,实验验证了缺陷抑制措施的有效性。研究结果表明,在飞切条件下,KDP晶体(001)晶面的脆塑转变(BDT)深度变化范围为125～268 nm,当沿45°方向切削时BDT深度最大,此时只要保证进给速率小于36.6μm/r即可避免在晶体表面形成凹坑。通过优化刀具结构,可消除晶体表面的凸起缺陷,有效抑制KDP晶体的表面缺陷,最终获得了粗糙度小于2 nm的光滑KDP晶体表面。     

Li2O-Al2O3-SiO2微晶玻璃加工脆延转变临界条件实验研究

 介绍了Li2O-Al2O3-SiO2微晶玻璃的加工特点。基于纳米划痕技术对Li2O-Al2O3-SiO2微晶玻璃进行了纳米划痕实验,测得微晶玻璃材料脆延转变临界切削深度和临界载荷的平均值分别为125.6 nm和29.78 mN。将实验所得临界切削深度值与基于压痕断裂力学模型建立的脆延转变临界切削深度计算值进行了对比,结果表明,T. G. Bifano基于显微压痕法给出的临界切削深度计算值与实验结果差别较大,结合实验结果对其公式进行了修正;基于压痕断裂力学模型建立的延性域磨削临界切削深度计算值与实验结果相差较小,并分析了产生差异的原因。     

KDP晶体前表面修复轮廓的光强调制能力影响

在高功率激光系统中,精密微机械修复是减缓磷酸二氢钾(KDP)晶体表面缺陷增长的有效方法,使用精密微铣削机床可以加工出球面型与高斯型修复轮廓。为得到最优的修复结构参数,建立了晶体前表面球面型与高斯型修复轮廓的电磁场有限元模型,通过改变轮廓的宽度、深度等参数,对两种修复轮廓的光强调制能力进行对比研究。仿真结果表明光强调制能力主要是由修复轮廓的衍射效应及入射光在修复界面处的二次入射所引起的干涉作用共同决定;针对初始损伤点,建议采用宽深比大于5的修复轮廓,从而有效提高KDP晶体表面缺陷点的激光损伤阈值,对于宽深比大于10的修复轮廓建议选用高斯型;对宽1000μm,深20μm的两种修复表面的激光损伤实验表明,高斯型修复轮廓具有较高的抗损伤能力,实验与仿真结果相一致。     

基于桥域理论的Cu单晶纳米切削跨尺度仿真研究

桥域方法是一种典型的跨尺度仿真研究方法.基于桥域理论,本文分析了原子和连续介质耦合区域的处理问题,即在耦合区采用不同的权重计算系统的能量,通过Lagrange乘子法对原子和连续介质位移进行约束.采用桥域方法,建立了单晶Cu米纳切削的跨尺度仿真模型,获得了单晶Cu纳米切削的材料变形机理.同时,研究了不同切削速度对纳米切削过程和原子受力分布的影响,仿真结果表明:随着切削速度的提高,切削区原子所受的力值增大,切屑变形系数减小,已加工表面变质层厚度增加.本文基于桥域理论,实现了Cu单晶纳米切削跨尺度的建模和仿真, 关键词： 桥域法 纳米切削 单晶Cu 切削速度     

KDP晶体单点金刚石切削表面粗糙度预测及实验研究

采用单点金刚石切削的方法加工了KDP晶体,利用回归分析的方法建立了表面粗糙度预测模型,达到了在加工前设计、预测和控制表面粗糙度的目的。利用预测模型分析了进给量、切削速度、背吃刀量对表面粗糙度的影响。通过优化设计获得了KDP晶体在该条件下的最佳切削参数,得到的表面粗糙度的最佳估计值为6.3389nm。利用最佳的切削工艺参数,加工出了表面粗糙度值为6.895nm的超光滑表面。     

NaNO_2晶体线性和非线性光学系数的计算

使用从头计算平面波赝势方法,计算了NaNO2晶体电子能带结构,并使用改进的倍频公式计算了它的线性折射率和静态二级非线性系数,所得到的结果和实验值相符.采用实空间原子切割方法分析了阳离子和阴离子基团对光学性质的贡献.计算表明(NO2)-基团对双折射率和倍频系数的贡献占主要地位,从而进一步验证了阴离子基团理论的正确性.     

NaNO2晶体线性和非线性光学系数的计算

使用从头计算平面波赝势方法,计算了NaNO₂晶体电子能带结构,并使用改进的倍频公式计算了它的线性折射率和静态二级非线性系数,所得到的结果和实验值相符.采用实空间原子切割方法分析了阳离子和阴离子基团对光学性质的贡献.计算表明(NO₂)-基团对双折射率和倍频系数的贡献占主要地位,从而进一步验证了阴离子基团理论的正确性 关键词： 电子结构 非线性光学系数 从头计算方法     

固着磨料磨具在晶体加工中的应用

由于光学晶体KPC-5和KPC-6已用在声学和其它一些科技领域,故对其表面质量提出了更高的要求。关键是尽量减少表面损伤层,使其深度局限在1.0～2.5毫米以内。众所周知,用固着磨料加工玻璃,损伤层的深度比用散粒磨料加工要小。对于这种现象,作者用切向力切削试样表面加以     

基于GaSe和ZnGeP2晶体差频产生可调谐太赫兹辐射的理论研究

基于非线性光学频率变换理论,采用已报道的利用非线性光学差频方法产生可调谐太赫兹波的实验条件作为理论分析的实验模型,计算模拟出在不同相位匹配条件下,GaSe和ZnGeP2晶体差频的相位匹配角、走离角、允许角和有效非线性系数,并对计算结果进行了分析比较,总结出对应输出不同太赫兹波长的最佳相位匹配方式.计算结果为利用非线性晶体差频产生可调谐太赫兹辐射的实验研究提供深入和全面的理论基础.     

基于GaSe和ZnGeP2晶体差频产生可调谐太赫兹辐射的理论研究

基于非线性光学频率变换理论,采用已报道的利用非线性光学差频方法产生可调谐太赫兹波的实验条件作为理论分析的实验模型,计算模拟出在不同相位匹配条件下,GaSe和ZnGeP₂晶体差频的相位匹配角、走离角、允许角和有效非线性系数,并对计算结果进行了分析比较,总结出对应输出不同太赫兹波长的最佳相位匹配方式.计算结果为利用非线性晶体差频产生可调谐太赫兹辐射的实验研究提供深入和全面的理论基础. 关键词： 太赫兹波 GaSe晶体 2晶体')" href="#">ZnGeP₂晶体 差频     

大尺寸磷酸二氢钾晶体的折射率均一性研究

采用德国Trioptics公司生产的新一代全自动高精度折射率测量仪,测量了磷酸二氢钾(KDP)晶体不同部位的样品位于近紫外到近红外波段(0.253—1.530μm)内12个不同波长处的折射率,测量精度达到10-6量级.结果表明,大尺寸KDP晶体不同部位样品的折射率存在不均一性,靠近晶体恢复区的样品折射率小于晶体锥头区的样品折射率,偏差在10-5—10-4量级.研究发现,这种折射率不均一性与晶体不同部位的结晶质量存在差异有关.另外,将测量数据与其他文献中的数据进行对比.结果显示,所测试的样品数、波段宽度、测量点数量以及数据的精度均超过其他文献,结合测试条件分析了不同文献数据存在差异的原因.最后,使用最小二乘法拟合得到了KDP晶体较为可靠的Sellmeier方程.     

Morphology control of KDP crystallites

The actual crystal morphology is synergistically determined by atomic interactions between the crystal surface, growth units and additives in the mother solution. Our present results microscopically show that the ideal crystal morphology is greatly determined by intrinsic characteristics such as the bond number, direction and strength in the crystallographic frame, while ethanol molecules in the mother solution can intensively affect the crystal size and aspect ratio of potassium dihydrogen phosphate (KDP). Some quantitative analyses concerning the addition of ethanol to the KDP solution are also described.     

Modification of three dimensional topography of the machined KDP crystal surface using wavelet analysis method

The wavelet analysis method has been extensively employed to analyze the surface structures and evaluate the surface roughness. In this work, however, the wavelet analysis method was introduced to decompose and reconstruct the sampled surface profile signals in the cutting direction that achieved by SPDT (single point diamond turning) operation, and the surface profile signals in tool feeding direction were reconstructed with the approximate harmonic functions directly. And moreover, the orthogonal design method, i.e. the combination design of general rotary method, was resorted to model the variations of the independent frequency and amplitude of different simulated harmonic signals in the cutting and tool feeding directions. As expected resultantly, a novel 3D surface topography modeling solution was established, which aims to predict and modify the finished KDP (potassium dihydrogen phosphate or KH₂PO₄) crystal surfaces. The validation tests were carried out finally under different cutting conditions, and the collected average surface roughness in any case was compared with the corresponding value as predicted. The results indicated the experimental data were well consistent with the predictions, and only an average relative error of 11.4% occurred in predicting the average surface roughness.     

A study of growth mechanism of KDP and ADP crystals by means of quantum chemistry

Impurity adsorption, crystal growth by adsorption of growth unit and step-pinning mechanism of metal ion adsorption were investigated for potassium dihydrogen phosphate (KDP; KH₂PO₄) and ammonium dihydrogen phosphate (ADP; NH₄H₂PO₄) by quantum chemistry. In this study, the ideal crystal morphologies, the growth unit and the crystal surface with and without metal ions were calculated and analyzed by using electrostatic property. It is found that the computational results based on electrostatic potential distribution can account for the observed behaviours on KDP and ADP crystal growth.     

Landau coefficients and the critical electric field in a KDP crystal

Analytical expressions for the Landau coefficients of deuterated potassium dihydrogen phosphate (DKDP) crystal are obtained in a four-particle cluster approximation. The critical electric field strengths calculated within the phenomenological and microscopic theories for DKDP are compared to experimental data. Calculations of the critical electric field in potassium dihydrogen phosphate (KDP) crystal in the cluster approximation with allowance for proton tunneling on hydrogen bonds allows us to determine the tunneling constant and the geometric factor associated with the change in the effective dipole moment upon deuteration. Good agreement with the experimental data is obtained only for positive values of the long-range interaction parameter.     

Effect of S Substitution for P Point Defects in KDP Crystals： First-Principles Study

The electronic structure and geometric distribution of phosphor replaced by sulfur in potassium dihydrogen phosphate （KDP） are investigated by first-principles calculations. The point defect narrows down the energy gap to about 4.9eV, corresponding to a two-photon absorption of 355nm after correction. This can explain the decrease of the laser damage resistance in KDP crystals. Moreover, the defects twist the crystal structure and weaken bonds, especially the O-H bonds, so these bonds may be the first sites to crack under laser irradiation.     

Nucleation studies and characterization of potassium thiocyanate added KDP crystals grown by seed rotation technique

The effect of the addition of potassium thiocyanate on potassium dihydrogen phosphate (KDP) crystals, grown from aqueous solution by the temperature lowering method using a microcontroller based seed rotation technique has been studied. As part of nucleation studies, metastable zone width, induction period and crystal growth rate of additive added KDP are determined and analyzed with the pure system. Dielectric measurements were carried out on pure and doped crystals at various temperatures ranging from 313 to 423 K and compared. The crystalline perfection of the grown crystal was studied by the high resolution X-ray diffraction analysis. The crystal grown from additive added solution was subjected to structural, optical transmission, second harmonic generation and hardness studies and the effect of additive on pure system is investigated.     

Raman gains of ADP and KDP crystals

In this paper, the Raman gain coefficients of ammonium dihydrogen phosphate(ADP) and potassium dihydrogen phosphate(KDP) crystals are measured. By using a pump source of a 30-ps, 532-nm laser, the gain coefficients of ADP and KDP are 1.22 cm/GW, and 0.91 cm/GW, respectively. While for a 20-ps, 355-nm pump laser, the gain coefficients of these two crystals are similar, which are 1.95 cm/GW for ADP and 1.86 for KDP. The present results indicate that for ultra-violet frequency conversion, the problem of stimulated Raman scattering for ADP crystal will not be more serious than that for KDP crystal. Considering other advantages such the larger nonlinear optical coefficient, higher laser damage threshold,and lower noncritical phase-matching temperature, it can be anticipated that ADP will be a powerful competitor to KDP in large aperture, high energy third-harmonic generation or fourth-harmonic generation applications.     

切削参数对KDP晶体加工表面实际频率特征的影响

针对采用单点金刚石超精加工的KDP晶体光学表面,研究了切削参数对微观形貌频率特征的影响。通过功率谱密度获得表面轮廓频率分布,并用连续小波重构加工过程中随切削用量变化的微观轮廓频率特征。结果表明:切削参数对微观形貌的影响具体表现在实际频率特征上,中频特征波长及幅值反映了切深及转速变化,随切深及转速增加,幅值变大;低频特征反映了进给量变化,随着进给量变小,频率及幅值变小;高频特征是加工过程中振动及材料各向异性的具体表现。     

大口径DKDP晶体受激拉曼散射增益系数的测量（英）

大口径KDP/DKDP晶体在强紫外光辐照下产生横向受激拉曼散射效应（TSRS）, 受激放大的拉曼散射光将导致激光能量损失甚至激光损伤, 测量DKDP晶体TSRS增益系数对设置激光装置的运行区间以确保晶体的安全使用非常重要。采用高精度光谱仪探测大口径DKDP晶体（氘含量65%）在351 nm激光辐照下的横向拉曼散射信号, 得到了拉曼散射光的增长曲线, 拟合得到的拉曼增益系数为0.109 cm/GW。同时, 实验结果表明晶体体损伤不影响TSRS增长行为, 表明晶体体损伤对拉曼增益系数测量结果的影响可以忽略。