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1.
A time-resolved high-power laser photometer, which measures the real-time variations of transmission, internal reflection, and scattering simultaneously with picosecond time resolution, was developed to investigate the material response sequence during high-power nanosecond laser irradiation in thick fused silica. It was found that the transient transmission decreased sharply, accompanied by an increase in internal reflection at the rising edge of the laser pulse. The transient transmission recovered, while laser damage did not occur, but it did not recover if the scattering increased, indicating the occurrence of laser damage. The reason for the sharp decrease of transmission and the relationship between the transmission drop and laser damage were discussed.  相似文献   
2.
抑制损伤发展的CO_2激光修复技术及机理研究   总被引:1,自引:1,他引:0  
熔石英表面激光损伤发展问题一直制约着激光器的运行通量。采用CO2激光在线熔融修复损伤点,修复后形成一个光滑的高斯坑,去除了损伤点中的裂纹,平滑了凹凸不平的表面,并且在紫外脉冲激光作用下,修复斑再次产生损伤的阈值高于熔石英元件的损伤生长阈值。因此CO2熔融修复技术能有效地抑制损伤发展。通过分析CO2激光作用下熔石英表面的温度分布,讨论修复坑的形成过程,确定激光参数对修复效果的影响,为寻找最佳修复参数提供理论基础。同时利用原子力显微镜(AFM)、轮廓仪细致分析损伤点和修复斑的微细结构,采用有限差分时域方法计算损伤点和修复斑周围的光强分布,探索消除裂纹和平滑表面对抑制损伤生长的作用。  相似文献   
3.
研究了不同密度和厚度的碳气凝胶薄片的制备及其表面致密层去除工艺。在以间苯二酚、甲醛为原料制备有机及碳气凝胶块体材料的基础上,结合自制活动式微模具成型工艺,制备了厚度在80~350 μm,密度在50~600 mg·cm-3范围内变化的碳气凝胶薄片。采用场发射扫描电镜、X射线相衬成像和表面轮廓仪-台阶仪等手段对其表面和内部微观结构进行了表征。测试结果表明,碳气凝胶薄片与块体的内部结构相同,但薄片表面存在一层和内部结构截然不同的致密层。采用不同粗糙程度的材料对薄片进行了表面微处理,成功去除该致密“皮”层。  相似文献   
4.
The spatial resolved method, which measures the laser-induced damage fluence by identifying the location of the damage point in the Gaussian beam three-dimensional direction, is demonstrated. The advantages and practicality of this method have been explained. Taking a triple frequency beam splitter as an example, the defect damage fluence can be accurately calculated by the spatial resolved method. The different defect damage performance of the triple frequency splitter is distinguished under irradiations of only the 355 and 532 nm lasers. The spatial resolved method provides a way to obtain precise information of optical film defect information.  相似文献   
5.
设计溶液实时连续过滤装置用于降温法快速生长KDP晶体.采用高亮度激光照射分析对比晶体内部的散射点密度,以同步辐射为光源的X射线形貌成像技术探测晶体内部的生长缺陷,并测定晶体三倍频激光(355 nm)的损伤阈值.实验结果显示,溶液连续过滤法生长的KDP晶体中包裹体和位错的密度明显降低,晶体的激光损伤阈值提高了30%.  相似文献   
6.
报道了一种基于全啁啾镜腔内色散补偿的、可长期稳定运行的亚8 fs钛宝石激光器.在4 W绿光抽运下, 可获得300 mW、86 MHz脉冲输出.腔内用于色散补偿的两对啁啾镜是国内自主设计自行镀膜的, 其对色散的精确控制可以在腔内不加尖劈对的情况下获得半宽超过150 nm超宽带输出.利用腔外色散补偿, 脉冲宽度被压缩至7.9 fs, 这是目前采用国产啁啾镜获得的最短脉宽, 也是无尖劈对谐振腔获得的最短脉宽.同时, 利用电路系统提供实时反馈调节, 可保证钛宝石激光器长期稳定运行, 24 h内功率抖动约0.6%.  相似文献   
7.
By testing a substantial number of tripler and z-cut KDP and DKDP crystals, we have observed that at 355nm, the laser induced damage threshold in the R-on-one test is higher than that in the one-on-one test. It is proved that laser conditioning is an efficient way to improve the damage resistance. The efficiency of laser conditioning becomes increasingly good with smaller ramping fluence steps. We have also found that the damage resistance of the z-cut crystal is higher than the triplet cut, and the pinpoint number is definitely less in the z-cut crystal. The reason for these observations is discussed.  相似文献   
8.
The electronic structure and geometric distribution of phosphor replaced by sulfur in potassium dihydrogen phosphate (KDP) are investigated by first-principles calculations. The point defect narrows down the energy gap to about 4.9eV, corresponding to a two-photon absorption of 355nm after correction. This can explain the decrease of the laser damage resistance in KDP crystals. Moreover, the defects twist the crystal structure and weaken bonds, especially the O-H bonds, so these bonds may be the first sites to crack under laser irradiation.  相似文献   
9.
在ICF工程中II类三倍频晶体使用的是含氘量70%DKDP晶体,而70%DKDP晶体生长难度大,成本高,因此选用氘含量低,性能达到工程要求的DKDP晶体作为II类三倍频晶体是很有必要的.采用横向双锥快速生长技术生长氘含量约35%DKDP晶体,按照II类方向进行切割,测试三倍频激光损伤阈值和横向受激拉曼散射效应(TSRS),并与70%DKDP晶体进行对比.实验结果表明,所生长含氘量35%DKDP晶体比70%DKDP晶体损伤阈值约高1.8倍,而在881.7 cm-1,35%DKDP晶体的拉曼散射峰值强度比70%DKDP晶体高出约23%,70%DKDP晶体的TSRS比35%小.  相似文献   
10.
利用原子力显微镜观察熔石英不同蚀刻时间的表面形貌,结合二次离子质谱分析,研究了熔石英的再沉积层结构和杂质分布。结果表明,熔石英表面深度10nm的再沉积层内存在大量微裂纹和杂质,经蚀刻展开形成nm级划痕和坑点,其分布随着深度增加呈指数衰减。根据nm级划痕密度、宽深比随蚀刻深度变化的规律,估算出再沉积层厚度,估算结果与二次离子质谱测得的杂质嵌入深度基本一致。杂质元素嵌入深度与抛光微裂纹分布特征的关联性表明,杂质很有可能藏匿在抛光微裂纹中。  相似文献   
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