基于ZnS金属网栅制作工艺的改进

为了制作基于ZnS的对雷达波高效电磁屏蔽的金属网栅,采用了一种新型的先胶后镀的光刻复制工艺。但在制作过程中,发现影响金属网栅成品率的主要因素为ZnS材料的颜色,即由于多晶ZnS的颜色和所用光刻胶的颜色相似,很难判断网栅是否显影彻底,进而影响真空镀膜过程中金属网栅膜的形成。结合金属网栅的制作工艺,通过采用镀一层过渡膜的方式,即采用镀膜、涂胶、显影、腐蚀、镀膜、去胶、腐蚀的工艺,有效地解决了ZnS颜色带来的影响。实验表明,采用该工艺一次性成功制作出线宽为8μm、周期为400μm的金属网栅。该工艺使基于ZnS金属网栅的成品率在90%以上。     

薄膜光学 薄膜光学理论与膜系设计

O484．1 2005032005 金属网栅结构参数设计与制作=Characteristic dimension design and fabrication of metallic mesh[刊,中]／冯晓国(中 科院长春光机所．吉林,长春(130033)),方梁…∥光学精 密工程．-2005,13(1)．-59-64 研究了金属网栅结构参数对其光电特性的影响,并通 过工艺实验结果测试,验证了分析计算成果。实验采用清 洗、涂胶、光刻、显影、镀膜、去胶、电镀工艺流程,并用激光 直写曝光代替掩模投影曝光。在MgF2基底上制作出线     

基于ZnS金属网栅制作工艺的改进

为了制作基于ZnS的对雷达波高效电磁屏蔽的金属网栅,采用了一种新型的先胶后镀的光刻复制工艺。但在制作过程中,发现影响金属网栅成品率的主要因素为ZnS材料的颜色,即由于多晶ZnS的颜色和所用光刻胶的颜色相似,很难判断网栅是否显影彻底,进而影响真空镀膜过程中金属网栅膜的形成。结合金属网栅的制作工艺,通过采用镀一层过渡膜的方式,即采用镀膜、涂胶、显影、腐蚀、镀膜、去胶、腐蚀的工艺,有效地解决了ZnS颜色带来的影响。实验表明,采用该工艺一次性成功制作出线宽为8 μm、周期为400 μm的金属网栅。该工艺使基于ZnS金属网栅的成品率在90%以上。     

激光直写邻近效应的校正

邻近效应是限制光刻系统分辨力的一个重要因素,它也限制了激光直写在亚微米和亚半微米光刻中的应用。分析了激光直写邻近效应产生的原因,指出它和电子束直写及投影光刻的区别,提出了一种简便有效的邻近校正方法。实验表明,通过光学邻近校正（ＯＰＣ）,利用微米级激光直写系统,制作出了０．６μｍ的实用光刻线条     

激光直写邻近疗效应的校正

邻近效应是限制光刻系统分辨力的一个重要因素,它也限制了激光直写在亚微米和亚半微微米光刻中的应用,分析了激光直写邻近效应产生的原因,指出它和电子束直写及投影光刻的区别,提出了一种简便有效的邻近校正方法,实验表明,通过光学邻近校正（ＯＰＣ）,利用微米级激光直写系统,制作出０．６μｍ的实用光刻线条。     

基于PET基底透明屏蔽膜的制备研究

为满足光学器件透红外屏蔽电磁波的要求,在PET柔性基底上制作了金属网栅透明屏蔽膜.分析网栅参数对其屏蔽效率及透过率的影响,选取结构参数.针对PET基底的柔性特点及其热稳定性,经试验研究优化光刻工艺中的提拉速度、烘烤时间及温度等参数,从而得到高质量的图形结构.采用磁控溅射法制备透明屏蔽膜,通过优化溅射功率、溅射气压等参数使膜/基结合更牢固.最后得到线宽为3μm、周期为250μm的金属网栅透明屏蔽膜.采用分光光度计测得其在300~2 200nm波段的平均透过率为77%;采用屏蔽室法测得其在2~18GHz频段的电磁屏蔽效率为12dB以上.     

金属网栅法布里珀罗干涉仪测量太赫兹波波长

设计并制作了用于测量波长大于150 μm(频率低于2 THz)的太赫兹波波长的金属网栅法布里珀罗干涉仪(FPI)。采用光电子微纳制造工艺制作了五组周期不大于40 μm,线宽不大于10 μm的有衬底方形金属网栅,利用太赫兹时域光谱技术测量了金属网栅的太赫兹波段光电特性,得到了各组金属网栅在感兴趣频段的反射率和金属网栅FPI的反射精细度,结果表明所制作的金属网栅FPI均可用于测量波长大于150 μm的太赫兹波。实验搭建金属网栅FPI扫描测量了212 μm的太赫兹波波长,与理论结果吻合。研究了金属网栅FPI对太赫兹波偏振方向的依赖性以及对FPI腔镜平行度的要求,结果表明,方形金属网栅FPI对正入射太赫兹波偏振方向不敏感,而对FPI腔镜平行度很敏感。     

直角坐标和极坐标系一体的激光直写设备

介绍了具有直角坐标和极坐标写入系统的激光直写设备,给出了该设备制作衍射光学元件的光刻特点.     

红外透明导电金属网栅薄膜

介绍了一种既高效透过红外光 ,同时又能有效屏蔽电磁干扰的金属网栅薄膜的基本原理和制备工艺。分析了网栅参数对其光学及电磁性能的影响。介绍了利用光刻和镀膜技术 ,在红外基片上制作线条宽度小于 10 μm ,周期约 35 0 μm的金属网栅。     

单级衍射量子点阵光栅的聚焦离子束直写法制备及光学性能检测

采用聚焦离子束直写技术,成功制作了面积为200μm×200μm,线密度500 mm 1,圆孔直径800 nm,金吸收体厚度为500 nm的单级衍射量子点阵光栅.研究了该光栅在波长442 nm激光下不同传输距离的衍射特性以及相对衍射效率.实验结果表明,量子点阵光栅不存在高级衍射,只保留了±1级和0级衍射,具有良好的单级衍射特性.1级衍射与0级衍射间距随传输距离的增大而增大,实测值与理论计算值相符.     

Fabrication of a curved linear grating by using a laser direct writer system

We present the lithography technique to fabricate a curved linear grating by using a Cartesian coordinates laser direct writer (LDW) system. The grating with the period of 15 μm is made on the convex lens surface. This is a new application of the LDW system. After the chromium coating and the photoresist removing procedures, a convex reflecting grating is obtained.     

PtSi IRCCD器件用长焦距Si微透镜阵列的制作研究

为了改善PtSi IRCCD器件的红外响应特性,需要添加长焦距微透镜阵列进行焦平面集光,本文提出了一种新的方法—曲率补偿法用于长焦距微透镜阵列的制作.扫描电子显微镜(SEM)显示微透镜阵列为表面极为平缓的方底拱形阵列,表面探针测试结果显示用曲率补偿法制作的微透镜阵列表面光滑,单元重复性好,其焦距可达到685.51μm.微透镜阵列器件与PtSi IRCCD器件在红外显微镜下对准胶合,显著改善了IRCCD器件的光响应特性.     

碟型量子阱微腔激光器的低阈值激射

利用反应离子刻蚀(RIE)和湿法腐蚀方法在InGaAs/InGaAsP多量子阱材料上研制出直径为8μm、4.5μm和2μm的碟型半导体微腔激光器。其中2μm直径的微碟在液氮温度下其光泵浦激射阈值仅为3μW左右。对高光功率密度下泵浦时出现的多模激射、跳模和激射光谱强度饱和现象进行了研究。并对微碟激光器的激射光谱线宽特性进行了初步的分析。     

Photonic quantum dots based on Bragg reflectors grown by conformal deposition on patterned substrates

A new approach, that combines the photolithography and conformal deposition techniques, was proposed to fabricate Si-based three-dimensional optical microcavities on patterned substrates. Different from the lateral optical confinement of 3D microcavities by using total internal reflection, Bragg reflectors are used for all three-dimensional optical confinement. From the room temperature photoluminescence spectra, discrete optical modes with obvious side-dependence were observed. With the lateral size decreased from 4.5 μm to 1.5 μm, the modes shift to higher energies and the mode splitting increases, which indicates that 3D optical microcavities act like photonic quantum dots. The numerical calculations of quantized photon states in photonic quantum dots show a quantitative agreement with these observed discrete optical eigenmodes.     

Patterning of oxide-hardened gold black by photolithography and metal lift-off

A method to pattern infrared-absorbing gold black by conventional photolithography and lift-off is described. A photo-resist pattern is developed on a substrate by standard photolithography. Gold black is deposited over the whole by thermal evaporation in an inert gas at ∼1 Torr. SiO₂ is then deposited as a protection layer by electron beam evaporation. Lift-off proceeds by dissolving the photoresist in acetone. The resulting sub-millimeter size gold black patterns that remain on the substrate retain high infrared absorption out to ∼5 μm wavelength and exhibit good mechanical stability. This technique allows selective application of gold black coatings to the pixels of thermal infrared imaging array detectors.     

Infrared suppression by hybrid EUV multilayer--IR etalon structures

We have developed a multilayer mirror for extreme UV (EUV) radiation (13.5?nm), which has near-zero reflectance for IR line radiation (10.6?μm). The EUV reflecting multilayer is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the IR radiation allowed the integration of the multilayer coating in a resonant quarter-wave structure for 10.6?μm. Samples were manufactured using magnetron sputtering deposition technique and demonstrated suppression of the IR radiation by up to 3 orders of magnitude. The EUV peak reflectance amounts 45% at 13.5?nm, with a bandwidth at FWHM being 0.284?nm. Therefore such a mirror could replace conventional multilayer mirrors to suppress undesired spectral components in monochromatic imaging applications, including EUV photolithography.     

Superhydrophobic properties of a hierarchical structure using a silicon micro-tip array decorated with ZnO nanowires

In this study, wetting properties of a hierarchical structure using a silicon micro-tip array covered with ZnO nanowire are characterized, and compared with hierarchical structures composed of micro-pillars for micro-scale roughness. The superhydrophobicity of a surface can be efficiently enhanced by using a micro-tip array, compared with a micro-pillar structure, because a micro-tip structure with high aspect ratio and small apex radius can significantly reduce fractions of liquid droplet area in contact, maintaining the droplet in the regime of the Cassie state. The micro-tip array was simply fabricated by combining anisotropic and isotropic silicon etching processes with one-step photolithography and a single etch mask. The measured height and aspect ratio of the fabricated micro-tip was around 40 μm and 8, respectively, when the center-to-center distance between micro-tips was 30 μm. The maximum CA on the hierarchical surface using the micro-tip array was measured to be 165.0 ± 2.3° with a period of 30 μm, while the hierarchical surface using the micro-pillar array showed the maximum CA of 158.6 ± 1.1° with 20 μm-diameter and 70 μm-gap between micro-pillars. The smallest CAH on the hierarchical micro-tip array was measured to be 5.0 ± 0.3° for the center-to-center distance between micro-tips of 30 μm.