玻璃衬底二氧化钒薄膜的宽频带太赫兹波调制特性

针对二氧化钒（VO2）薄膜在可调谐太赫兹功能器件中的应用, 采用磁控溅射法在K9玻璃衬底上制备了VO2薄膜, 并用X射线衍射（XRD）对薄膜的晶相进行表征。利用配备加热装置的太赫兹时域光谱系统（THz-TDS）研究了薄膜样品在变温过程中的THz反射、透射光谱特性及其变化规律。实验结果表明, 随着加热温度的升高, VO2薄膜发生半导体-金属相变并对宽频段THz波产生显著的调制作用。调制深度明显依赖于THz频率, 薄膜样品对THz波反射功率、透射率的幅度调制深度在0.3~0.5 THz范围波动较大;对THz波的透射率在低频处较大, 高频处较小, 调制深度在35%~65%之间变化。该薄膜制备简单, 质量高, 可应用于太赫兹开关和调制器等功能器件。     

氧化法结合快速热处理制备VOx薄膜及其性质研究

采用磁控溅射法在单晶Si〈100〉基底上沉积金属钒(V)薄膜,在高纯氧环境下快速热处理制备具有相变特性的氧化钒(VOx)薄膜.利用X射线衍射仪、X射线光电子能谱和扫描电子显微镜对薄膜结晶结构、薄膜中V的价态与组分及表面微观形貌进行分析,应用四探针测试方法和太赫兹时域频谱技术对样品的电学和光学特性进行测试.结果表明:在一定范围的快速热处理保温温度和保温时间下,都可以制备出具有热致相变特性的氧化钒薄膜,相变前后薄膜的方块电阻变化超过两个数量级,薄膜成分主要由V2O5和VO2混合组成,薄膜中V整体价态不因热处理条件改变而不同.在快速热处理条件范围内,500℃ 25 s左右条件下(中温区)制备出的氧化钒薄膜相变特性最佳,并且对THz波有一定的调制作用.     

基于VO2薄膜相变原理的温控太赫兹超材料调制器

利用二氧化钒薄膜绝缘相–金属相的相变特性, 提出了一种基于超材料的温控太赫兹调制器, 研究了相变超材料在太赫兹波段的传输特性和温控可调谐特性. 当入射太赫兹波为水平偏振或垂直偏振状态时, 器件的透过率谱线在1 THz附近呈现出两个独立的、中心频率分别为1.3 THz和1.7 THz、 带宽分别为0.2 THz和0.35 THz的 透射宽带. 当温度从40℃至80℃变化时, 两宽带的透过率发生明显的降低, 在二氧化钒的相变温度(68℃)时尤其灵敏, 对入射光的二种偏振状态, 调制深度均达到60%以上, 实现了良好的调制效果. 关键词： 太赫兹超材料 2薄膜')" href="#">VO₂薄膜 调制器 相变     

PtSe2薄膜的时间分辨太赫兹光谱特性研究(特邀)

基于时间分辨太赫兹光谱技术,研究了不同厚度的二硒化铂(PtSe_2)薄膜在太赫兹波段的光学特性。实验结果表明,当泵浦光功率从0增强至2 540μJ/cm2时,11 nm-PtSe_2薄膜的电导率逐渐增大,透射太赫兹信号强度减小;而197 nm-PtSe_2薄膜的电导率逐渐减小,透射太赫兹信号强度增大。由此构造的光控太赫兹调制器件的调制速度约为14 ps,工作带宽为0.2～1.8 THz,调制深度为15%～35%。研究证明PtSe_2薄膜材料在高速光控太赫兹器件领域具有应用潜力。     

VO_2/AZO复合薄膜的制备及其光电特性研究

采用直流磁控溅射和后退火氧化的方法在掺铝氧化锌(AZO)导电玻璃上制备了二氧化钒(VO2)薄膜,研究了不同的退火温度、退火时间对VO2/AZO复合薄膜制备的影响,并对复合薄膜的结构、组分、光电特性进行了测试与分析.结果表明,导电玻璃上的AZO没有改变VO2的取向生长,但明显改变了VO2薄膜的表面形貌特征.与用相同工艺和条件在普通玻璃基底上制备的VO2薄膜相比,VO2/AZO复合薄膜的相变温度降低约25?C,热滞回线宽度收窄至6?C,相变前后可见光透过率均在50%以上,1500 nm处红外透过率约为55%和21%,电阻率变化达3个数量级.该复合薄膜表面平滑致密,制备工艺简单,性能稳定,可应用于新型光电器件.     

金属Pt薄膜上二氧化钒的制备及其电致相变性能研究

通过引入SiO₂氧化物缓冲层, 在金属Pt电极上利用射频磁控溅射技术成功制备出高质量的VO₂薄膜. 详细研究了SiO₂厚度对VO₂薄膜的晶体结构、微观形貌和绝缘体–金属相变(MIT)性能的影响. 结果表明厚度0.2 μm以上的SiO₂缓冲层能够有效 消除VO₂薄膜与金属薄膜之间的巨大应力, 制备出具有明显相变特性的VO₂薄膜. 当缓冲层达到0.7 μm以上, 获得的薄膜具有明显的(011)晶面择优取向, 表面平整致密, 相变前后电阻率变化达到3个数量级以上. 基于该技术制备了Pt-SiO₂/VO₂-Au三明治结构, 通过在垂直膜面方向施加很小的驱动电压, 观察到明显的阶梯电流跳跃, 证实实现了电致绝缘体–金属相变过程. 该薄膜制备工艺简单, 性能稳定, 器件结构灵活可应用于集成式电控功能器件. 关键词： 二氧化钒薄膜 相变特性 电致相变 阈值电压     

二氧化钒薄膜光致绝缘体-金属相变的太赫兹时域光谱研究

二氧化钒薄膜在光的照射下,会从绝缘体相变为金属,伴随有电导率的剧变,该现象称之为光致绝缘体-金属相变。二氧化钒薄膜的这种相变对于太赫兹波段的调制器或者其他功能器件有重要应用。利用太赫兹时域光谱技术研究了二氧化钒薄膜光致绝缘体-金属相变前后的透射光谱变化,分析了该薄膜的这种光致相变在太赫兹波段的特性。实验中二氧化钒薄膜相变成金属的过程分别通过连续激光照射和飞秒激光照射实现。两种照射方式下,均观察到了明显的太赫兹波形变化,并且随着照射光功率的增大,信号的幅度衰减以及时域波形畸变逐渐加剧。进而通过对透射太赫兹时域信号的傅里叶变换光谱分析发现,在照射光功率增加时,不但该薄膜的透射光谱幅值在下降,而且其谱线形状也在随之改变,其原因为二氧化钒薄膜的色散特性在光照条件下逐渐趋向金属性所致。为清晰的描述光致相变的色散特点,用二氧化钒薄膜光照前后透射光谱的幅度差定义了透射率调制函数来描述上述现象。在透射率调制函数曲线上,能够明显的看出二氧化钒的这种光致相变在太赫兹波段具有强烈的频率相关性质,并且随照射光功率变化呈规律性演化。进一步对比发现,虽然连续光和飞秒激光照射方式都能引发光致相变,但在同样透射光谱情况下,对应的激发光功率存在明显不同,对这两种照射方式下的相变效率差别进行了分析和讨论。     

硅基二氧化钒相变薄膜电学特性研究

本文以原子层沉积超薄氧化铝(Al₂ O₃)为过渡层, 采用射频反应磁控溅射法在硅半导体基片上制备了颗粒致密并具有(011)择优取向的二氧化钒(VO₂)薄膜. 该薄膜具有显著的绝缘体–金属相变特性, 相变电阻变化超过3 个数量级, 热滞回线宽度约为6℃. 基于VO₂薄膜构建了平面二端器件并测试了不同温度下I-V曲线, 观测到超过2个数量级的电流跃迁幅度, 显示了优越的电致相变特性. 室温下电致相变阈值电压为8.6 V, 电致相变弛豫电压宽度约0.1 V. 随着温度升高到60℃, 其电致相变所需要的阈值电压减小到2.7 V. 本实验制备的VO₂薄膜在光电存储、开关、太赫兹调控器件中具有广泛的应用价值.     

利用真空变温电阻测试仪研究VO_2薄膜的电阻特性

利用磁控溅射技术在普通玻璃基片上制备了VO2薄膜,晶体结构和表面形貌分析表明制备的样品主要具有VO2相,结晶情况良好.利用自制真空变温薄膜电阻测试仪器测试了VO2薄膜的电阻率随温度变化曲线,观察到钒氧化物的电阻突变和热滞现象.     

硅基全光宽带太赫兹幅度调制器的研究

提出了一种基于掺金硅的全光学宽带太赫兹波幅度调制器, 研究了金(Au)点阵掺杂后硅(Si)体内的少数载流子寿命及其太赫兹波调制特性. 实验结果表明, 掺杂的Au原子为Si中的光生电子- 空穴对提供了有效复合中心, 使其少数载流子寿命由原来十几微秒降低至110 ns左右. 利用波长915 nm 调制激光作为抽运光源, 在340 GHz载波的动态调制测试中获得4.3 MHz的调制速率和21%的调制深度, 使Si基调制器的调制速率提高了两个数量级. 该全光太赫兹调制器可工作在整个太赫兹频段内, 具有极化不敏感特性, 因而在太赫兹波高速和宽带调控方面具有重要的应用价值, 也是构建光控型Si 基太赫兹功能器件的重要基础.     

Compare the phase transition properties of VO2 films from infrared to terahertz range

VO₂ with reversible semiconductor–metal phase transition properties is particularly available for the application in smart opto-electrical devices. However, there are rare reports on comparing its phase transition properties at different ranges. In this study, the VO₂ films are designed with the similar crystalline structure and stoichiometry, but different morphologies by inorganic and organic sol-gel methods, and their phase transition characteristics are compared both at infrared and terahertz range. The results indicate that the VO₂ film prepared by inorganic sol-gel method shows more compact nanostructure. It results in larger resistivity change, infrared and terahertz switching ratio in the VO₂ film. Moreover, it presents that the phase transition intensity of VO₂ film in terahertz range is more sensitive to its microstructure. This work is helpful for understanding the susceptibility of terahertz switching properties of VO₂ to its microstructure. And it can provide insights for the applications of VO₂ in terahertz smart devices.     

硅基VO2纳米薄膜光致绝缘体—金属相变的THz时域频谱研究

利用THz时域频谱技术(THz-TDS)研究了硅基二氧化钒(VO₂)纳米薄膜的光致绝缘体—金属相变特性.在连续光激发下前后,观察到了非常明显的THz透过率变化,并通过薄膜近似计算出了THz波段金属态VO₂薄膜的电导率.根据实验结果建立了金属态VO₂薄膜的等效Drude模型,得到了复电导率,复电容率以及复折射率等相关的基本参数,并通过基于时域有限积分法模拟了THz波穿透硅基金属态VO₂薄膜的过程,验证了所建立的模型的正确 关键词： 二氧化钒 光致相变 Drude模型 THz时域频谱技术     

An Artificially Garnet Crystal Materials Using In Terahertz Waveguide

A hypothesis is brought forward that the materials with low propagation loss in both optical and microwave band may exhibit good performance in terahertz （THz） band because THz wave band interspaces those two wave bands. For the purpose-of exploring a kind of low-loss material for THz waveguide, Lu2.1Bi0.9Fe5O12（LuBiIG） garnet films are prepared by liquid phase epitaxy （LPE） method on a gadolinium gallium garnet （GGG） substrate from lead-free flux because of the good properties in both optical and microwave bands. In microwave band, the ferromagnetic resonance （FMR） linewidth of the film 2△H = 2.8-5.1Oe; in optical band, the optical absorption coefficient is 600cm^-1 at visible range and about 100-170cm^-1 when the wavelength is longer than 800nm. In THz range, our hypothesis is well confirmed by a THz-TDS measurement which shows that the absorbance of the film for THz wave is 0.05-0.3 cm 1 and the minimum value appears at 2.3 THz. This artificial ferromagnetic material holds a great promise for magnetic field tunable THz devices such as waveguide, modulator or switch.     

Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

A VO₂ thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO₂ (FTO) conductive glass substrate. The FTO/VO₂/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I–V hysteresis loop for the FTO/VO₂/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO₂/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.     

An ultra-broadband and highly-efficient tunable terahertz polarization converter based on composite metamaterial

A near perfect, ultra-broadband and highly-efficient terahertz reflective polarization converter based on multilayer metamaterial is proposed in this paper. The hybrid metamaterial unit structure consists of a split-ring metal pattern and a metal sheet separated by a dielectric resonator spacer. The polarization conversion ratio (PCR) is above 90% from 2.06 to 4.26 THz, with an optimal range between 2.98 and 4.16 THz where the efficiency is above 98% for normal incidence. It also shows excellent performance for oblique incidences. Moreover, the working band and the optimized frequency range for the polarization conversion can be manipulated by changing the open angle between the metallic arcs and the substrate thickness, respectively. Based on this design, two types of hybrid metamaterial converters are also investigated to swith off polarization conversion altogether or modify the polarization conversion bandwidth. A polarization converter with temperature controlled PCR is realized by adding a vanadium oxide (VO₂) mask on the designed structure. In addition, by integrating photoconductive silicon islands between the split-ring and metal bar a dual-band polarization converter can be realized. Combining with a polarizer, this window can act as an active THz filter.     

Room‐temperature terahertz emission from ZnSe‐based quantum cascade structures: A simulation study

We identified conditions for room‐temperature operation of terahertz quantum cascade lasers (THz QCLs) where variable barrier heights are used on ZnSe/Zn_1–xMg_x Se material systems. The THz QCL devices are based on three‐level two‐well design schemes. The THz QCL lasers with alternating quantum barriers with different heights were compared with THz QCL laser structures with fixed quantum barrier heights. It is found that the THz QCL device with novel design employing variable barrier heights achieved the terahertz emission of about 1.45 THz at room‐temperature (300 K), and has improved laser performance due to the suppression of thermally activated carrier leakage via higher‐energy parasitic levels. Thus, THz QCL devices employing the design with variable barrier heights may lead to future improvements of the operating temperature and performance of THz QCL lasers. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Infrared optical modulators for missile testing

The continued proliferation of imaging infrared (I²R) missile systems has created the need for fully representative infrared scene generators. In order to test these I²R systems correctly a very large dynamic range is required of the scene generator. This cannot easily be produced by the standard approach of an array of suspended resistor heater elements. This paper therefore describes the fabrication of infrared optical modulators for use in high dynamic range and high frame rate scene generation. Modulation is produced by the heating of a variable reflectivity coating. This is achieved by coating a suitable substrate with a thin film of vanadium dioxide (VO₂) via a reactive sputtering process. VO₂ undergoes a semiconductor to metal phase transition at approximately 68°C and the associated change in reflectivity is exploited to create the modulator. The correct stoichiometry of the thin film of VO₂ is critical in producing high frame rate devices. Both transmissive and reflective modulators are described.