Experimental study on helium optical electron polarimetry

Optical electron polarimetry is suitable for calibration of a spin-polarized electron source, especially for measurement of polarization of spin-polarized electron beam. In this paper, a new optical electron polarimeter is described, which is based on the circularly polarized He radiation induced by the bombarding of He atoms with spin-polarized electrons. The theoretical basis of the optical electron polarimetry and the structure of the optical electron polarimeter are discussed. The measurement of polarization of spin-polarized electrons produced from a new GaAs （100） spin-polarized electron source is carried out. The result of polarization of 30.8% for our spin-polarized electron source is obtained using the He optical electron polarimeter.     

HIRFL-CSR电子冷却系统空心电子束性能研究

 电子冷却系统中冷却力的大小与电子束的温度密切相关。由于强流电子束自身产生的空间电荷场,使得电子束的速度离散,增加了电子束温度,降低了冷却效率。为了减小空间电荷效应,HIRFL CSR的电子冷却系统将首次采用空心电子束对储存环中的重离子束流进行冷却。通过分析实心电子束和空心电子束的空间电荷场,研究了其对电子束速度和温度的影响。     

多晶体二次电子的角度分布

 根据二次电子发射的主要物理过程,推导了内二次电子到达多晶表面并逸出的几率的角度分布、斜射入多晶的高能原电子产生的二次电子的角度分布和由背散射电子产生的二次电子的角度分布。同时,推导了高能原电子轰击多晶产生的二次电子的角度分布公式,该公式表明多晶的二次电子遵循余弦分布,且与原电子的入射角无关。分析结果表明: 在内二次电子最大逸出深度范围内,如果由射入多晶的原电子和背散射电子产生的内二次电子数是常数, 则多晶的二次电子的角度分布遵循余弦分布;如果由射入多晶的原电子和背散射电子产生的内二次电子数越来越少,则多晶的二次电子发射角度分布随出射角减少得比出射角的余弦值更慢;如果由射入多晶的原电子和背散射电子产生的内二次电子越来越多,则多晶的二次电子发射角度分布随出射角减少得比出射角的余弦值更快。     

Electron dynamics and harmonics radiation due to electron oscillation driven by laser standing wave

The electron dynamics and harmonics radiation spectra due to electron oscillation driven by laser standing wave (SW) have been investigated considering a single electron mode. It is found that electron can pass through or be reflected from laser SW as electron is shot into laser SW from antinodes plane with initial velocity parallel to electric field of SW, and for electron incidence at arbitrary plane the attraction plane of electron trajectories will transfer from nodes plane to antinodes plane if initial electron kinetic energy exceeds a critical value. Further, the harmonics emission due to electron oscillation during passing through laser SW is considered in two cases of electron incidence plane at nodes and antinodes. In case of electron incidence at nodes, the spectrum of radiation is redshifted for backward radiation and blueshifted for forward radiation, and broadening of spectrum is noticed. These effects are much more pronounced at higher laser intensities. However, for case with electron incidence at antinodes, these phenomena vanish.     

The tube character of electron drift in condensed inert gases

The behavior of an excess electron in condensed inert gases in an external electric field is considered at densities and temperatures at which the mobility of a slow electron is relatively high. On the basis of experimental data and a model of a pair electron interaction with atoms, an effective potential energy surface is constructed for an excess electron inside a dense inert gas. The region available for a slow electron consists of many intersecting channels that form a Delaunay network located between atoms. A drifting electron, as a quantum object, propagates along these channels (tubes), and electron transition between intersecting potential energy tubes of different directions provides an effective electron scattering. This mechanism of electron drift and scattering differs from that in gases and crystals. Peculiarities of electron drift inside dense inert gases are analyzed within the framework of this mechanism of electron scattering, leading to a moderate change of the electron mobility upon melting.     

Numerical study on discharge characteristics influenced by secondary electron emission in capacitive RF argon glow discharges by fluid modeling

A one-dimensional(1D) fluid model of capacitive RF argon glow discharges between two parallel-plate electrodes at low pressure is employed. The influence of the secondary electron emission on the plasma characteristics in the discharges is investigated numerically by the model. The results show that as the secondary electron emission coefficient increases,the cycle-averaged electric field has almost no change; the cycle-averaged electron temperature in the bulk plasma almost does not change, but it increases in the two sheath regions; the cycle-averaged ionization rate, electron density, electron current density, ion current density, and total current density all increase. Also, the cycle-averaged secondary electron fluxes on the surfaces of the electrodes increase as the secondary electron emission coefficient increases. The evolutions of the electron flux, the secondary electron flux and the ion flux on the powered electrode increase as the secondary electron emission coefficient increases. The cycle-averaged electron pressure heating, electron Ohmic heating, electron heating, and ion heating in the two sheath regions increase as the secondary electron emission coefficient increases. The cycle-averaged electron energy loss increases with increasing secondary electron emission coefficient.     

Ka波段同轴多注相对论速调管的电子束引入

首先通过理论分析确定影响多注电子束引入效率的主要因素,确定初步的结构参数;其次利用三维粒子模拟软件建立Ka波段相对论多注二极管模型进行仿真优化,使电子束引入效率达到89%;并开展了电子束的产生与传输实验研究,验证了粒子模拟仿真结果。在电子束电压502 kV、束流4.34 kA、轴向磁感应强度0.76 T的条件下,电子束引入效率达到了72%,由电子束轰击尼龙靶材获得的电子束束斑图表明,电子束在产生与传输过程中形状未发生畸变,产生的电子束直径约为2 mm。模拟和实验研究验证了设计的强流多注二极管可以产生高品质的电子束和实现高效率的电子束引入。     

氧负离子解吸附过程HPM大气击穿弛豫时间分析

基于全局模型,引入氧负离子解吸附过程,完善了重复频率高功率微波脉冲弛豫模型,理论研究了重复频率高功率微波脉冲大气击穿弛豫过程,数值模拟了不同附着频率、解吸附频率以及初始电子浓度条件下,弛豫过程电子浓度随时间的变化规律。结果表明:弛豫过程电子浓度变化分为快衰减和慢衰减两个阶段;发现氧负离子的引入明显延缓了弛豫过程后期电子的衰减;解吸附频率与附着频率对弛豫过程有着相反的影响,解吸附频率越高,慢衰减阶段的电子浓度越高,快衰减阶段电子浓度变化不明显;附着频率越高,快衰减阶段电子浓度变化越剧烈,慢衰减阶段的电子浓度越低;初始电子浓度越大,慢衰减阶段电子浓度变化越剧烈。     

数值模拟飞秒激光加热金属的热电子发射

研究了超短超强激光脉冲与薄膜靶相互作用中产生的电子热发射.当超短激光脉冲与薄膜靶相互作用时,首先入射超短脉冲激光对吸收深度内的自由电子进行热激发,接下来热激发电子将能量传递到附近的晶格,再通过电子和晶格二体系的热传导,以及电子晶格间的热耦合,将能量传递到材料的内部.因此,电子在皮秒级甚至更短的时间内不能与晶格进行能量耦合,使电子温度超出晶格温度很多,电子热发射就变得非常明显了.用双温方程联合Richardson-Dushman方程的方法对飞秒脉冲激光照射金属靶的电子热发射进行了研究,结果发现电子热发射对飞     

含负折射率介质的一维光子晶体构成的相干热辐射源的辐射特性及控制

电子清刷是微通道板生产流程中常用的除气方法,会引起微通道板其他性能参量的变化.为研究电子清刷对微通道板输出信噪比及增益的影响,根据信噪比及增益的定义讨论了微通道板性能参量的测试方法,研制了微通道板参量测试系统.应用微通道板参量测试系统对微通道板进行了电子清刷处理,测试清刷过程中不同阶段微通道板的信噪比及增益变化.实验表明:微通道板增益随清刷时间增加而降低,同时增益稳定性提高;电子清刷过程中微通道板的输出信号及噪音的变化率与微通道板增益的变化率基本相同,输出信噪比基本不变.增益变化是影响清刷过程中信号及噪音变化的主要因素,并且电子清刷对微通道板输出信噪比影响较小.     

电子清刷对微通道板增益及输出信噪比的影响

电子清刷是微通道板生产流程中常用的除气方法,会引起微通道板其他性能参量的变化.为研究电子清刷对微通道板输出信噪比及增益的影响,根据信噪比及增益的定义讨论了微通道板性能参量的测试方法,研制了微通道板参量测试系统.应用微通道板参量测试系统对微通道板进行了电子清刷处理,测试清刷过程中不同阶段微通道板的信噪比及增益变化.实验表明:微通道板增益随清刷时间增加而降低,同时增益稳定性提高;电子清刷过程中微通道板的输出信号及噪音的变化率与微通道板增益的变化率基本相同,输出信噪比基本不变.增益变化是影响清刷过程中信号及噪音变化的主要因素,并且电子清刷对微通道板输出信噪比影响较小.     

高入射能量下的金属二次电子发射模型

基于高入射能量电子产生二次电子发射的物理过程, 分别对高入射能量电子产生的真二次电子和背散射电子的概率进行理论分析与建模. 利用Bethe能量损失模型和内二次电子逸出概率分布, 推导出高入射能量电子产生有效真二次电子发射的系数与入射能量的关系式; 根据高入射能量电子在材料内部被吸收的规律, 推导出高入射能量电子产生背散射电子的系数与入射能量之间的关系式. 结合两者得到高入射能量下金属的二次电子发射模型. 利用该模型计算得到典型金属材料Au, Ag, Cu, Al的二次电子发射系数, 理论计算结果与采用Casino软件模拟金属内部散射过程得到的数值模拟结果相符. 关键词： 二次电子发射 高入射能量 金属表面 散射过程     

Electron wavelength and drift mobility operators for treating quantum electron waveguides

After showing that the electron wavelength and electron drift-mobility are quantized in quantum quasi-one-dimensional electron wave guides, we introduce and determine electron wavelength and electron drift-mobility quantum operators for investigating electron transport through the above waveguides in the ballistic regime. A linear relationship between the two aforementioned operators is found. Our formulation is valid for carbon nanotubes and nanowires.     

Spatial distribution of electron characteristic in argon rf glow discharges

The spatial distributions of the electron density and the mean electron energy of argon radio frequency (rf) glow discharge plasma in a plasma-enhanced chemical vapour deposition (PECVD) system have been investigated using an established movable Langmuir probe. The results indicate that in the axial direction the electron density tends to peak at midway between the two electrodes while the axial variation trend of mean electron energy is different from that of the electron density, the mean electron energy is high near the electrodes. And the mean electron energy near the cathode is much higher than that near the anode. This article focuses on the radial distribution of electron density and mean electron energy. A proposed theoretical model distribution agrees well with the experimental one: the electron density and the mean electron energy both increase from the centre of the glow to the edge of electrodes. This is useful for better understanding the discharge mechanism and searching for a better deposition condition to improve thin film quality.     

多光子非线性Compton散射的能量转换

研究了多光子非线性Compton散射中电子与光子的能量转换及其转换效率.结果表明:散射光子频率随电子吸收光子数n的增大而增大,随碰撞非弹性成分ξ的增大而迅速减小.在超强激光场中,当极端相对论性电子与光子发生多光子非线性Compton散射且被光场俘获时,能量转换效率趋于无限大,即电子可以从超强激光场中获得巨大的加速能量.用高速电子束入射并与光子发生多光子非线性Compton散射,是提高非线性Compton散射能量转换效率的重要途径.     

提高砷化镓二次电子发射系数的探讨

介绍了延长负电子亲和势二次电子发射材料砷化镓的逸出深度的设计,并给出了经过特殊设计的这种砷化镓的能级示意图,然后对通常的砷化镓和经过特殊设计的砷化镓的二次电子发射系数的理论值进行了比较,得出:当原电子入射能量较低（小于10 keV）时,两种砷化镓的二次电子发射系数差值较小;当原电子入射能量较高（大于20 keV）时,经过特殊设计的砷化镓的二次电子发射系数比普通砷化镓的二次电子发射系数大,而且随着原电子入射能量的升高,两种砷化镓的二次电子发射系数差值也在增大。     

电子温度对霍尔推进器等离子体鞘层特性的影响

采用二维粒子模拟方法研究了霍尔推进器通道中电子温度对等离子体鞘层特性的影响, 讨论了不同电子温度下电子数密度、鞘层电势、电场及二次电子发射系数的变化规律. 结果表明: 当电子温度较低时, 鞘层中电子数密度沿径向方向呈指数下降, 在近壁处达到最小值, 鞘层电势降和电场径向分量变化均较大, 壁面电势维持一稳定值不变, 鞘层稳定性好; 当电子温度较高时, 鞘层区内与鞘层边界处电子数密度基本相等, 而在近壁面窄区域内迅速增加, 壁面处达到最大值, 鞘层电势变化缓慢, 电势降和电场径向分量变化均较小, 壁面电势近似维持等幅振荡, 鞘层稳定性降低; 电子温度对电场轴向分量影响较小; 随电子温度的增大, 壁面二次电子发射系数先增大后减少. 关键词： 霍尔推进器 等离子体鞘层 电子温度 粒子模拟     

An application of the electron mirror in the time-of-flight spectrometer

We suggest applying of the spherical electron mirror in the time-of-flight electron spectrometer with a position sensitive detector in order to increase the effective acceptance solid angle of the spectrometer. The spherical electron mirror is placed near the specimen and it focuses electrons on a position sensitive detector as a converging electron flux. The electron mirror increases the acceptance angle of the spectrometer by a factor of 20. The electron mirror of the spectrometer consists of an inner spherical electrode of the radius R and an outer spherical electrode of the radius 1.1R. The central segment of the inner electrode inside the linear angle of 80° is made of a grid. The detector plate radius is about 0.23R. The acceptance solid angle of the spectrometer with this electron mirror is about 1.1sr, the range of the polar angle of emission is 20°–90° relative to the surface normal, and the range of the azimuth angle of emission at its maximum is ±36° relative to the basic plane of the spectrometer. The design of the spectrometer allows to recover the electron trajectory for each detected electron and to calculate the energy and the emission angle of the electron. The energy resolution of the spectrometer is about 0.2 eV/ns for the electron energy of 10 eV. The energy range is from E_min0.1eU_r up to eU_r, where U_r is the retarding potential of the electron mirror. The perturbing influence of the grid of the electron mirror limits mainly the angular resolution of the spectrometer and affects relatively slightly the energy resolution. The electron spectrometer with two detectors and two electron mirrors symmetric about the spectrometer axis allows to measure electron pairs in coincidence in a wide range of emission angles and energies with k-resolutions.     

高品质激光尾波场电子加速器

激光尾波场电子加速的加速梯度相比于传统直线加速器高了3—4个量级,对于小型化粒子加速器与辐射源的研制具有重要的意义,成为当今国内外的研究热点.台式化辐射源应用需求的提高,特别是自由电子激光装置的快速发展,对电子束流品质提出了更高的要求,激光尾波场电子加速的束流品质和稳定性是目前实现新型辐射源的首要障碍.本文归纳整理了中国科学院上海光学精密机械研究所电子加速研究团队十年来在研制台式化激光尾波场电子加速器过程中采取的方案和取得的进展.例如率先提出了注入级和加速级分离的级联加速方案,通过实验获得了GeV量级的电子束能量;基于级联加速方式利用能量啁啾控制,实验获得世界最高品质的电子束流;通过优化激光系统稳定性和特殊的气体喷流结构,获得稳定的高品质电子束流输出等.这一系列实验结果有利于进一步推进激光尾波场电子加速器的应用.     

Electron temperature fluctuation in the HT-7 Tokamak plasma observed by electron cyclotron emission imaging

The fluctuation of the electron temperature has been measured by using the electron cyclotron emission imaging in the Hefei Tokamak-7 (HT-7) plasma. The electron temperature fluctuation with a broadband spectrum shows that it propagates in the electron diamagnetic drift direction, and the mean poloidal wave-number $\bar{k}_{\theta}$is calculated to be about 1.58 cm^-1, or \bar{k}_θ ρ_s≈ 0.34. It indicates that the fluctuation should come from the electron drift wave turbulence. The linear global scaling of the electron temperature fluctuation with the gradient of electron temperature is consistent with the mixing length scale qualitatively. Evolution of spectrum of the fluctuation during the sawtooth oscillation phases is investigated, and the fluctuation is found to increase with the gradient of electron temperature increasing during most phases of the sawtooth oscillation. The results indicate that the electron temperature gradient is probably the driver of the fluctuation enhancement. The steady heat flux driven by electron temperature fluctuation is estimated and compared with the results from power balance estimation.