纳米β-FeSi2/a-Si多层膜室温光致发光分析

采用射频磁控溅射的方法,在Si（100）基片上制备了纳米β-FeSi₂/Si多层结构,利用X射线衍射、透射电子显微镜、光致发光光谱等表征技术,研究了β-FeSi₂/Si多层结构的结构、成分和光致发光特性.研究结果表明：利用磁控溅射法得到的Fe/Si多层膜,室温下能够检测到β-FeSi₂的1.53 μm处光致发光信号;未退火时多层膜是（非晶的FeSi₂+β-FeSi₂颗粒）/非晶Si结构,退火后则是 关键词： 2')" href="#">β-FeSi₂ 磁控溅射 XRD 光致发光光谱     

磁控溅射法合成纳米β-FeSi2/a-Si多层结构

β-FeSi₂作为一种环境友好的半导体材料，颗粒化及非晶化正在成为提高其应用性能和改善薄膜质量、膜基界面失配度的有效途径.利用射频磁控溅射法在单晶Si基体上沉积Fe/Si多层膜，合成纳米β-FeSi₂/Si多层结构.通过透射电子显微镜、高分辨电子显微术等分析手段，研究了多层结构和制备工艺之间的相互关系.研究结果表明，采用磁控溅射Fe/Si多层膜的方法，不需要退火就可以直接沉积得到β-FeSi₂相小颗粒.β-FeSi₂相 关键词： 2')" href="#">β-FeSi₂ 磁控溅射 透射电子显微镜 半导体薄膜     

Ti-Si-N复合膜的界面相研究

为了揭示Ti_Si_N复合膜中Si₃N₄界面相的存在方式及其对薄膜力学 性能的影响 ，采用x射线衍射仪、高分辨透射电子显微镜、俄歇电子能谱仪和显微硬度仪对比研究了磁 控溅射Ti_Si_N复合膜和TiN/Si₃N₄多层膜的微结构和力学性能. 实 验结果表明 ，Ti_Si_N复合膜均形成了Si₃N₄界面相包裹TiN纳米晶粒的微结构. 其中低Si 含量的Ti_Si_N复合膜中Si₃N₄界面相的厚度小于1nm，且以晶体态 存在，薄膜 呈现高硬度. 而高Si含量的Ti_Si_N复合膜中的Si₃N₄界面相以非晶 态存在，薄 膜的硬度也相应降低. 显然，Ti_Si_N复合膜中Si₃N₄界面相以晶体 态形式存在 是薄膜获得高硬度的重要微结构特征，其强化机制可能与多层膜的超硬效应是相同的. 关键词： Ti－Si－N复合膜 界面相 微结构 超硬效应     

直流磁控溅射Si和玻璃衬底Fe/Co多层膜的磁性能比较

对直流磁控溅射Si和玻璃衬底［Co_t/Fe_3t］₅(t=2, 3, 4, 5nm)多层膜的磁性能进行了比较.对于t相同但衬底不同的样品,实验发现饱和磁化强度相差很小,但是矫顽力却相差很大.对矫顽力差异的理论分析表明,多层膜的粗糙度和畴壁类型是引起这种差异的主要原因. 关键词： Fe/Co多层膜 磁性能 矫顽力     

多层膜［Co85Cr15/Pt］20的磁性、垂直磁记录特性和微结构的关系

采用磁控溅射法制备了性能优良的以Pt为缓冲层的［Co85₈₅Cr15_{15/Pt］2020 多层膜，研究了溅射气压对［Co8585Cr1515/Pt］2020多层膜微结构和磁性的 影响.研究结果表明，Ar溅射气压对［Co8585Cr1515/Pt］2020多层膜的微结构 、垂直磁各向异性和矫顽力有重要的影响 关键词： 溅射气压 多层膜 垂直磁各向异性 有效磁各向异性常数}     

FeCuCrVSiB单层和多层膜的横向巨磁阻抗效应

用射频溅射法制备了Fe_71.5Cu₁Cr_2.5V₄Si₁₂B₉单层膜和结构为(F/S)₃/M/(F/S)₃的多层膜，在制备过程中加72kA/m的纵向磁场.研究表明在制备过程中加磁场明显改善了材料的软磁性能，降低了材料的矫顽力.将样品经不同温度退火热处理后，发现经230℃退火1.5h的单层膜和多层膜具有最佳的软磁性能和最大的磁阻抗效应，单层膜最大横向磁阻抗比为37.5%，多层膜最大横向磁阻抗比高达277%.通过比较单层和多层膜磁阻抗效应随频率和磁场的变化，发现多层膜具有较低的磁阻抗效应的临界频率和峰值特征频率，和较大的磁阻抗变化率，而且有较低的横向磁阻抗效应的饱和场. 关键词： 铁基合金 多层膜 巨磁阻抗效应     

TiN/TiB2异结构纳米多层膜的共格生长与力学性能

采用多靶磁控溅射法制备了一系列具有不同TiB₂调制层厚度的TiN/TiB_{2纳米多层膜.利用x射线衍射仪、高分辨电子显微镜和微力学探针研究了TiB2层厚变化对多层膜生长结构和力学性能的影响.结果表明，在fcc-TiN层(111)生长面的模板 作用下，原为非晶态的TiB2层在厚度小于2.9nm时形成hcp晶体态，并与fcc-TiN 形成共格外延生长；其界面共格关系为{111}TiN//{0001}TiB2，〈110〉TiN//〈1120〉TiB2.由于共格界面存在晶格失配 度，多层膜中形成拉、压交变的应力场，导致多层膜产生硬度和弹性模量升高的超硬效应， 最高硬度和弹性模量分别达到46.9GPa和465GPa.继续增加TiB2层的厚度，TiB2形成非晶态并破坏了与TiN层的共格外延生长，多层膜形成非晶TiN层和非晶TiB< sub>2层交替的调制结构，其硬度和弹性模量相应降低. 关键词： 2}纳米多层膜')" href="#">TiN/TiB₂纳米多层膜 共格生长 晶体化 力学性能     

Fe/SnO2非晶多层膜的磁特性

研究了高频溅射制备的Fe/SnO₂非晶多层膜的磁特性.当SnO₂层厚度d_s固定为5nm时，样品的饱和磁化强度M_s随Fe层厚度d_m的减小而降低，这主要受样品的死层效应和维度效应的影响.另外，在d_m很小时，样品呈现准二维磁性.样品居里温度T_C随d_m的减小单调下降.样品矫顽力H_c随d_m的变化呈现 关键词：     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al₂O₃调制层厚度的TiN/Al₂O₃纳米多层膜. 利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能. 研究结果表明，在TiN/Al₂O₃纳米多层膜中，单层膜时以非晶态存在的Al₂O₃层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化，并与TiN层形成共格外延生长，相应地，多层膜产生硬度明显升高的超硬效应，最高硬度可达37.9 GPa. 进一步增加多层膜中Al₂O₃调制层的层厚度，Al₂O₃层逐渐形成非晶结构并破坏了多层膜的共格外延生长，使得多层膜的硬度逐步降低. 关键词： 2O₃纳米多层膜')" href="#">TiN/Al₂O₃纳米多层膜 外延生长 非晶晶化 超硬效应     

真空退火对周期性界面掺杂Ni80Co20薄膜磁性的影响

用磁控溅射方法制备了两个具有不同Fe层厚度的［Ni₈₀Co₂₀(L)/Fe(t_Fe)］_N多层膜系列样品,其中t_Fe=0.1和2nm.研究了两个系列样品的磁及输运性质随Ni₈₀Co₂₀层厚度L的变化关系.在退火态［Ni₈₀Co₂₀(L)/Fe(0.1nm)］_N系列样品中,发现各向异性磁电阻( 关键词： 多层膜 各向异性磁电阻 界面效应 退火     

Pt/Co/Pt/Ni多层膜的磁光特性

用磁控溅射法制备了Pt/Co/Pt/Ni系列样品,其中Ni层具有不同的厚度.通过测量样品的Kerr转角、椭偏率、折射率和吸收率,推算出了四个等效电导张量元σ_1xx,σ_2xx,σ_1xy,σ_2xy随Ni层厚度的变化情况.再结合电导张量元与Kerr角的理论公式,分析了在Ni层厚度的变化过程中,每一个电导张量元对Kerr角的贡献;发现在短波段σ_2xy起主导作用,而在长波段四个电导张量元共同起作用.经分析认为这是由于在Ni层的增厚过程中,Pt 5d带劈裂程度逐渐减小.与纯Pt/Co膜相比,在Ni层的厚度为0.10—0.23nm的范围内样品具有较低的居里温度和较高的Kerr角,这说明Pt/Co/Pt/Ni多层膜具有较高的应用价值. 关键词：     

动态法拉第效应及其损耗机制

在磁光介质中，法拉第磁光效应的动态特性与静态特性具有明显的差别．交变法拉第旋转θ_t的实部θ′_t恒小于静态法拉第旋转θ_ｓ的实部θ′_ｓ，θ′_t＜θ′_ｓ，而虚部θ″_t＞θ″_ｓ．分析(BiTm)₃(FeGa)₅O₁₂磁光单晶薄膜法拉第效应的测量结果表明，在交流磁场频率ω＞10 关键词：     

Thermal stability,magnetic and magnetocaloric properties of Gd55Co35M10 (M = Si,Zr and Nb) melt-spun ribbons

The thermal stability, magnetic and magnetocaloric properties of Gd₅₅Co₃₅M₁₀ (M = Si, Zr and Nb) melts-pun ribbons were studied. The relatively high reduced glass transition temperature (T_x1/T_m > 0.60) and low melting point (T_m) resulted in excellent glass forming ability (GFA). The Curie temperatures (T_C) of melt-spun amorphous ribbons Gd₅₅Co₃₅M₁₀ for M = Si, Zr and Nb were 166, 148 and 173 K, respectively. For a magnetic field change of 2 T, the values of maximum magnetic entropy change (−ΔS_M)^max for Gd₅₅Co₃₅Si₁₀, Gd₅₅Co₃₅Zr₁₀ and Gd₅₅Co₃₅Nb₁₀ were found to be 2.86, 4.28 and 4.05 J kg⁻¹K⁻¹, while the refrigeration capacity (RC) values were 154, 274 and 174 J kg^–1, respectively. The RC_FWHM values of amorphous alloys Gd₅₅Co₃₅M₁₀ (M = Si, Zr and Nb) are comparable to or larger than that of LaFe_11.6Si_1.4 crystalline alloy. Large values of (−ΔS_M)^max and RC along with good thermal stability make Gd₅₅Co₃₅M₁₀ (M = Si, Zr and Nb) amorphous alloys be potential materials for magnetic cooling operating in a wide temperature range from 150 to 175 K, e.g., as part of a gas liquefaction process.     

In-plane magnetic anisotropy and coercive field dependence upon thickness of CoFeB

The structural and magnetic properties of as-grown 5–50 nm thin ion-beam sputter deposited transition metal–metalloid Co₂₀Fe₆₀B₂₀ (CFB) films are reported in this communication. A broad peak observed at 2θ∼45° in the glancing angle X-ray diffraction pattern revealed the formation of very fine nano-sized grains embedded in majority amorphous CFB matrix. Although no magnetic field is applied during deposition, the longitudinal magneto-optic Kerr effect measurements performed at 300 K in these as-grown films clearly established the presence of in-plane uniaxial magnetic anisotropy (K_u). It is argued that this observed anisotropy is strain-induced. This is supported by the observed dependence of direction of K_u on the angle between applied magnetic field and crystallographic orientation of the underlying Si(100) substrate, and increase in the coercivity with the increase of the film thickness.     

电子自旋交换作用对极向磁光Kerr效应的影响——能带跃迁模型

用微观量子理论和能带跃迁模型,研究了极向磁光Kerr效应对电子自旋交换劈裂能依赖性.结果表明,磁光Kerr转角θ_K与自旋劈裂能Δ之间仅当Δ很小时才有线性关系;θK的展开式中只出现Δ奇次项而不出现偶次项.     

Magnetic transitions in LaFe13−x−yCoySix compounds

The magnetic properties of a set of LaFe_13?x?yCo_ySi_x compounds (x = 1.6 ? 2.6; y = 0, y = 1.0) have been investigated using magnetic measurements, thermal expansion, ⁵⁷Fe Mössbauer spectroscopy and high resolution neutron powder diffraction methods over the temperature range 10–300 K. The natures of the magnetic transitions in these LaFe_13?x?yCo_ySi_x compounds have been determined. The Curie temperatures of LaFe_13?xSi_x were found to increase with Si content from T_C = 219(5) K for Si content x = 1.6 to T_C = 250(5) K for x = 2.6. Substitution of Co for Fe in LaFe_10.4Si_2.6 resulted in a further enhancement of the magnetic ordering temperature to T_C = 281(5) K for the LaFe_9.4CoSi_2.6 compound. The nature of the magnetic transition at the Curie temperature changes from first order for LaFe_11.4Si_1.6 to second order for LaFe_10.4Si_2.6 and LaFe_9.4CoSi_2.6. The temperature dependences of the mean magnetic hyperfine field values lead to T_C values in good agreement with analyses of the magnetic measurements. The magnetic entropy change, ?ΔS_M, has been determined from the magnetization curves as functions of temperature and magnetic field (ΔB = 0 ? 5 T) by applying the standard Maxwell relation. In the case of LaFe_12.4Si_1.6 for example, the magnetic entropy change around T_C is determined to be -ΔS_M ～ 14.5 J kg^?1 K^?1 for a magnetic field change Δ B = 0 ? 5 T.     

Depth dependence of Néel wall pinning on amorphous CoxSi1−x films with diluted arrays of elliptical antidots

Diluted arrays of elliptical antidots have been fabricated by optical lithography, electron beam lithography and plasma etching on amorphous Co₇₄Si₂₆ magnetic films with a well-defined uniaxial anisotropy. The magnetic behavior of two identical antidot arrays but with different hole depth in comparison with film thickness has been studied by transverse magneto-optical Kerr effect. Significant differences appear in the coercivity depending on whether the magnetic film is completely perforated or not, indicating a much more effective domain wall pinning process when the depth of the holes is smaller than the magnetic film thickness.     

Enhancement of magneto-optical response in nanocomposite-hydrogenated amorphous silicon multilayers

The dependence of the magnetic and magneto-optical properties on the semiconductor layer thickness has been studied for a [(Co₄₅Fe₄₅Zr₁₀)₃₅(Al₂O₃)₆₅(X)/α-Si:H(Y)]₃₀ multilayer. It is found that an increase in the Si layer thickness to 1.3–1.7 nm leads to an increase in the transverse Kerr effect, magnetization, and coercive force. The changes in the properties of the nanomultilayer system are related to the percolation transition between CoFeZr granules through Si streaks. This percolation leads to effective exchange interaction between isolated ferromagnetic granules of Co₄₅Fe₄₅Zr₁₀ alloy and increase in magneto-optical response.     

金属玻璃(Fe1-xCox)78Si10B12的感生各向异性

本文研究了金属玻璃(Fe_1-xCO_x)₇₈Si₁₀B₁₂的磁化感生各向异性、应变感生各向异性随成分和温度的变化。磁化感生各向异性常数K_um为正值,x=0.7时为最大;不可逆的应变感生各向异性常数K_usi为正值,x=0.5时为最大;可逆的应变感生各向异性常数K_usr除了x>0.975区均为负值,在x=0.7时为最大;感生各向异性常数在温度变化时与M_s^α成正比,α在3.4和7.5之间随成分和退火工艺而变化。用短程有序模型解释了部分实验结果。 关键词：     

Magnetic domain structure in Fe78.8−xCoxCu0.6Nb2.6Si9B9 nanocrystalline alloys studied by Lorentz microscopy

The magnetic domain structures of Fe_78.8−xCo_xCu_0.6Nb_2.6Si₉B₉ (x=0, 20, 40, 60) alloys are investigated by Lorentz microscopy coupled with the focused ion beam method. The specimen prepared using the FIB method is found to have a considerably more uniform thickness compared to that prepared using the ion-milling method. In Fe_38.8Co₄₀Cu_0.6Nb_2.6Si₉B₉ and Fe_18.8Co₆₀Cu_0.6Nb_2.6Si₉B₉ alloys, 180° domain walls extending in the direction of the induced magnetic anisotropy are observed. Analysis with Lorentz microscopy reveals that the width of the magnetic domains decreases with an increase in the cobalt content or the induced magnetic anisotropy K_u, that is, the domain width d is proportional to the induced magnetic anisotropy (K_u)^−1/4. On the other hand, in the in situ Lorentz microscopy observation as a function of temperature, magnetic ripple structures are found to appear in a localized area due to the fluctuation of magnetization vectors from 423 K. It is observed that the induced magnetic anisotropy caused by the applied magnetic field at 803 K is not suppressed by the magnetic ripple structures observed at 423–443 K.