FeSi/Si成份调制膜的二维磁性和死层效应

成功地制成了FeSi/Si非晶态成分调制膜,固定Si层厚度,系统改变FeSi层厚度d_m发现,随d_m下降,饱和磁化强度M_s单调减小,这主要是死层效应的贡献,OK下死层厚度约为5.8?,随d_m减小,调制膜逐渐由三维磁性转变为二维磁性,表现为出现低磁滞和无磁滞效应,线性的M_s(T)-T关系和Curie温度T_c的单调下降,T_c满足如下关系:△T_{c关键词：}     

真空退火对周期性界面掺杂Ni80Co20薄膜磁性的影响

用磁控溅射方法制备了两个具有不同Fe层厚度的［Ni₈₀Co₂₀(L)/Fe(t_Fe)］_N多层膜系列样品,其中t_Fe=0.1和2nm.研究了两个系列样品的磁及输运性质随Ni₈₀Co₂₀层厚度L的变化关系.在退火态［Ni₈₀Co₂₀(L)/Fe(0.1nm)］_N系列样品中,发现各向异性磁电阻( 关键词： 多层膜 各向异性磁电阻 界面效应 退火     

(Sr,Co,Nb）掺杂SnO2压敏电阻的电学非线性

研究了Sr对新型(Co, Nb)掺杂SnO₂压敏材料微观结构和电学性质的影响.当SrCO ₃的含量从零增加到1.50mol%时，(Co, Nb)掺杂SnO₂压敏电阻的击穿电压从240V/mm猛增 到1482V/mm.样品的微观结构分析发现, 当SrCO₃的含量从零增加到1.50 mol%时, SnO2的晶粒尺寸迅速减小．晶界势垒高度测量揭示，SnO₂晶粒尺寸的迅速减小是击穿 关键词： 碳酸锶 二氧化锡 势垒 电学非线性     

In2O3/SnO2薄膜的制备及光谱反射性能研究

开展了在伪装网基布上镀In₂O₃/SnO₂薄膜的性能研究,系统分析了薄膜厚度对其光谱反射性能的影响;总结了薄膜厚度对In₂O₃/SnO₂薄膜表面形貌、光谱反射辐射性能的影响规律,为In₂O₃/SnO₂薄膜的红外伪装应用奠定了基础理论和实验依据. 关键词： 2O₃/SnO₂薄膜')" href="#">In₂O₃/SnO₂薄膜 红外反射特性 红外发射率 可见光—近红外透过率     

低温制备SnO2电子传输层用于钙钛矿太阳能电池

SnO₂具有光稳定性优异、可低温溶液制备等优点被视为电子传输层的优异材料之一,广泛应用于高效稳定的平面异质结钙钛矿太阳能电池.本文在低温(150℃)下采用旋涂工艺制备SnO₂电子传输层,探究了SnO₂前驱体溶液不同浓度(SnO₂质量分数为2.5%—10.0%)下制备的SnO₂电子传输层对钙钛矿太阳能电池性能的影响.通过对SnO₂薄膜进行扫描电子显微镜(SEM)、紫外-可见光(UV-Vis)吸收光谱和透射光谱分析,发现基底的覆盖率、透光率和SnO₂薄膜的带隙随SnO₂前驱液浓度的增加而增大;通过对SnO₂/钙钛矿(MAPbI₃)薄膜进行SEM、UV-Vis、X-射线衍射(XRD)、稳态光致发光(PL)光谱分析,发现SnO₂胶体分散液浓度为7.5%制备的SnO₂层上沉积的MAPbI₃的粒径最大,结晶度最好,具...     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al₂O₃调制层厚度的TiN/Al₂O₃纳米多层膜. 利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能. 研究结果表明，在TiN/Al₂O₃纳米多层膜中，单层膜时以非晶态存在的Al₂O₃层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化，并与TiN层形成共格外延生长，相应地，多层膜产生硬度明显升高的超硬效应，最高硬度可达37.9 GPa. 进一步增加多层膜中Al₂O₃调制层的层厚度，Al₂O₃层逐渐形成非晶结构并破坏了多层膜的共格外延生长，使得多层膜的硬度逐步降低. 关键词： 2O₃纳米多层膜')" href="#">TiN/Al₂O₃纳米多层膜 外延生长 非晶晶化 超硬效应     

反应溅射VN/SiO2纳米多层膜的微结构与力学性能

采用V和SiO₂靶通过反应溅射方法制备了一系列具有不同SiO₂和VN调制层厚的VN/SiO₂纳米多层膜. 利用X射线衍射、X射线能量色散谱、高分辨电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明：在Ar，N₂混和气体中，射频反应溅射的SiO₂薄膜不会渗氮. 单层膜时以非晶态存在的SiO₂，当其厚度小于1nm时，在多层膜中因VN晶体层的模板效应被强制晶化，并与VN层形成共格外延生长. 相应地，多层膜的硬度得到明显提高，最高硬度达34GPa. 随SiO₂层厚度的进一步增加，SiO₂层逐渐转变为非晶态，破坏了与VN层的共格外延生长结构，多层膜硬度也随之降低. VN调制层的改变对多层膜的生长结构和力学性能也有影响，但并不明显. 关键词： 2纳米多层膜')" href="#">VN/SiO₂纳米多层膜 共格外延生长 非晶晶化 超硬效应     

SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO₂层厚度的AlN/SiO₂纳米多层膜，利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能，研究了SiO₂层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明，由于受AlN六方晶体结构的模板作用，溅射条件下以非晶态存在的SiO₂层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度，多层膜中产生了拉、压交变的应力场，使得多层膜产生硬度升高的超硬效应. SiO₂随层厚的进一步增加又转变为以非晶态生长，多层膜的外延生长结构受到破坏，其硬度也随之降低. 关键词： 2纳米多层膜')" href="#">AlN/SiO₂纳米多层膜 赝晶化 应力场 超硬效应     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)_n/ FeMn多层膜.研究结果表明，多层膜的垂直交换偏置场H_ex和反铁磁层厚度的关 系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期 数的增加，垂直交换偏置场H_ex相应减小，并且与铁磁层的调制周期数近似成反 比关系.(Pt/Co)₃/FeMn的垂直交换偏置场H_ex已经达到22.3kA/m.为 关键词： 交换偏置 垂直各向异性 多层膜     

磁控溅射Fe/Mo多层膜的巨磁电阻及层间耦合

研究了DC/RF磁控溅射Fe/Mo多层膜的磁电阻特性.在反铁磁性耦合的样品中,观察到了磁电阻比率约为12%的巨磁电阻效应.当Mo层厚度改变时,还观察到了周期约为1.0—1.2nm的层间耦合振荡.另外,F/Mo多层膜的磁电阻比率不仅随Mo层厚度改变出现振荡,而且与Fe层厚度的改变也有着很强的依赖关系. 关键词：     

Mössbauer and x-ray absorption studies in Fe and V co-doped SnO2

Ferromagnetic nanoparticles of iron and vanadium co-doped SnO₂ were synthesized by a sol-gel method. Fe and V co-doped SnO₂ enhanced the magnetization, which showed the maximum saturation magnetization (M_s) at 1 % of Fe and 1 % of V co-doping. With further increasing the amounts of Fe and V co-doping into SnO₂ host, the M_s decreased. Chemical states of vanadium ions were deduced as V⁵⁺ states by x-ray absorption spectroscopy. Mössbauer spectrometry revealed that the intensities of sextet components are related to the M_s, which indicates that small amounts of Fe and V co-doping is effective to enhance M_s.     

‘In-situ’ ink-jet printed Fe-doped MgO thin films with tunable ferromagnetism

Magnetism in wide band gap materials is of great interests for future spintronic device applications. We prepared MgO and Fe-doped MgO films ‘in-situ’ on substrates by inkjet printing, and investigated the ferromagnetism tuned by the doping of Fe, the annealing temperature and the film thickness. It is found that the Fe-doping improves the crystallinity of the films with lattice structure changed by annealing temperature. The saturation magnetization (M_s) of the films enhanced by ~5 times comparing with the pure MgO thin film of similar thickness (~90 nm), because of both the long-range ordering of localized 3d electrons in Fe and the defects induced magnetism. The M_s at 5 K decreases with the film thickness, which is mainly attributed to the interface induced ferromagnetism. The Fe-doped MgO films with ferromagnetism in this work can be used in future spintronic devices.     

Magnetic behaviour and DCEMS study of SnO2 films implanted with 57Fe

Fe implanted SnO₂ films (5 × 10¹⁶ and 1 × 10^{17 57}Fe ions/cm²) characterized by conversion electron Mossbauer spectroscopy (CEMS) are reviewed. The substrate temperatures affect the growth of precipitated iron oxides. The Fe ion implanted film at room temperature (RT) shows no Kerr effect and no magnetic sextet in CEM spectra. The SnO₂ film implanted with ⁵⁷Fe at the substrate temperature of 300 °C show a small Kerr effect although the magnetic sextet is not observed, but post-annealing results in the disappearance of the Kerr effect. This magnetism is considered to be due to defect induced magnetism. Some samples were measured by CEMS at 15 K. SnO₂ (0.1 at %Sb and 3 at %Sb) films, implanted at 500 °C and the post-annealed samples, show RT ferromagnetism due to formation of clusters of magnetite and maghemite, respectively. The layer by layer analysis of these films within 100 nm in thickness has been done by depth sensitive CEMS (DCEMS) using a He + 5 % CH₄ gas counter. The structures and compositions of Fe implanted SnO₂ films, and the effects due to post-annealing were investigated.     

Effect of low-valent atom substitution on electronic structure and magnetic properties of Fe1.5M0.5CoSi (M=V, Cr, Mn, Fe) Heusler alloys

Quaternary Heusler alloys Fe_1.5M_0.5CoSi with M=V, Cr, Mn and Fe have been investigated theoretically and experimentally. All of these samples crystallize in the ordered Heusler-type structure. The calculated electronic structure shows a pseudogap around E_F in the minority spin states of Fe₂CoSi. With the substitution of low-valent atoms for Fe, the majority antibonding peak is shifted to higher energy and a minority gap around the Fermi level is opened. High spin polarization ratio is obtained in Fe_1.5M_0.5CoSi (M=V, Cr, Mn) alloys. The calculated total spin moments decrease with decreasing number of valence electrons and follow the Slater-Pauling curve, which agree with the experimental results well. The Curie temperature decreases as M atom varies from Fe to V, but is always higher than 650 K, which is suitable for technical applications.     

Proximity effect in superconductor/ferromagnet layered system: Influence of superconductivity on magnetic properties of Nb/Fe epitaxial bilayers

Magnetic and superconducting properties of Fe/Nb epitaxial bilayers have been studied. Single crystal Fe/Nb (110) bilayers with a Nb thicknessd _Nb in the range from 250 to 650 Å and with a Fe thicknessd _Fe in the range from 7 to 27 Å were prepared using molecular beam epitaxy techniques. Magnetization measurements showed the existence of a magnetically “dead” Fe-interface layer with a thicknessd _NM varying strongly with minor modifications of the growth conditions. For bilayers with a small magnetic layer thicknessd _M and a smalld _NM the FMR measurements revealed an anomalous decrease of the effective magnetization 4πM _eff of the ferromagnetic Fe layer below the superconducting transition temperatureT _c. The absolute change of 4πM _eff belowT _c depends strongly on the actual values ofd _M andd _NM: upon decreasing bothd _M andd _NM the effect increases considerably. As a possible mechanism for the anomalous temperature dependence of 4πM _eff belowT _c we discuss a spatial modulation of ferromagnetic order due to a modification of the RKKY inter-action in the superconducting state.     

XPS depth profiling studies of L-CVD SnO2 thin films

In this paper we present the results of the XPS atomic depth profile analysis, using ion beam sputtering, of L-CVD SnO₂ thin films grown on an atomically clean SiO₂ substrate after annealing at 400 °C in dry atmospheric air. From the evolution of the Sn 3d_5/2, O 1s, Si 2p and C 1s core level peaks our experiments allowed the determination of the in depth atomic concentration of the main components of the SnO₂/SiO₂ interface. Thin (few nm) nearly stoichiometric SnO₂ films are present at the topmost layer of the thin films, and progressive intermixing with SnO and silicon oxide is observed at deeper layer. The interface between the Sn and the Si oxide layers (i.e. the effective Sn oxide thickness) is measured at 13 nm.     

Detection of hydrogen with SnO2-coated ZnO nanorods

SnO₂-coated ZnO nanorods on c-plane sapphire substrates were synthesized by pulsed laser deposition. The thickness of the polycrystalline SnO₂ was ∼10 nm, as determined by high-resolution transmission electron microscopy, while the diameter of the ZnO nanorods was ∼30 nm. The sensitivity of the SnO₂/ZnO structures to hydrogen was tested by depositing Ti/Au Ohmic contacts on a random array of the nanorods and measuring the current at fixed voltage. There was no response to 500 ppm H₂ in N₂ at room temperature, but we obtained a sensitivity of ∼70% at 400 °C. The SnO₂/ZnO structures exhibit drift in their recovery characteristics and for sequential detection of hydrogen, as generally reported for SnO₂ thin film sensors.     

Manifestation of nano-sized effects in photoinduced nonlinear optics of CdI2–Cu layered single crystals

The infrared (IR) induced second harmonic generation in the thin CdI₂–Cu crystalline layers was discovered. With decreasing thickness of the CdI₂–Cu crystals up to several nanometers value of second-order nonlinear optical susceptibility d₁₄ (at wavelength λ=2.76 μm) for the output IR-induced SHG significantly increases. For the Cu content about 0.4% the output SHG signal achieves its maximum at the sample thickness below 2 nm. It is important that for the samples with larger film thickness the corresponding changes have substantially different properties. Limitation of the d₁₄ at the larger concentration is probably caused by formation of the Cu clusters limiting the enhancement of the hyperpolarizability for particular cluster as well as total nonlinear dielectric susceptibility.     

Templated synthesis of monodisperse mesoporous maghemite/silica microspheres for magnetic separation of genomic DNA

A novel method is described for the preparation of superparamagnetic mesoporous maghemite (γ-Fe₂O₃)/silica (SiO₂) composite microspheres to allow rapid magnetic separation of DNA from biological samples. With magnetite (Fe₃O₄) and silica nanoparticles as starting materials, such microspheres were synthesized by the following two consecutive steps: (1) formation of monodispersed organic/inorganic hybrid microspheres through urea-formaldedyde (UF) polymerization and (2) removal of the organic template and phase transformation of Fe₃O₄ to γ-Fe₂O₃ by calcination at elevated temperatures. The as-synthesized particles obtained by heating at temperature 300 °C feature spherical shape and uniform particle size (d_particle=1.72 μm), high saturation magnetization (M_s=17.22 emu/g), superparamagnetism (M_r/M_s=0.023), high surface area (S_BET=240 m²/g), and mesoporosity (d_pore=6.62 nm). The composite microsphere consists of interlocked amorphous SiO₂ nanoparticles, in which cubic γ-Fe₂O₃ nanocrystals are homogeneously dispersed and thermally stable against γ- to α-phase transformation at temperatures up to 600 °C. With the exposed iron oxide nanoparticles coated with a thin layer of silica shell, the magnetic microspheres were used as a solid-phase adsorbent for rapid extraction of genomic DNA from plant samples. The results show that the DNA templates isolated from pea and green pepper displayed single bands with molecular weights greater than 8 kb and A₂₆₀/A₂₈₀ values of 1.60-1.72. The PCR amplification of a fragment encoding the endogenous chloroplast ndhB gene confirmed that the DNA templates obtained were inhibitor-free and amenable to sensitive amplification-based DNA technologies.