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1.
利用低能N~ (0.5keV)离子轻微轰击2H-MoS_2(0001)清洁表面,从UPS(HeⅠ,HeⅡ)得到d电子峰向E_F移动,价带顶出现明显的“肩膀”或带尾,它随轰击时间的增加而增强,同时使d_z~2带变宽。UPS的结果表明,这种表面在室温下有明显的O_2吸附活性,O_2吸附后这个肩膀明显下降。结合XPS,AES和LEED的研究,我们认为这个“肩膀”态与次表面原子层的Mo原子的d电子的暴露和最外表面原子层s原子空位缺陷的产生有关。这些新的表面电子态与加氢脱硫(HDS)催化活性中心有密切的关系。  相似文献   

2.
本文利用Ar+轰击正分的α-Fe2O3表面,证明了轰击后的表面呈类FeO性质,存在Fe++。提出了由于表面Fe++的3d电子的催化作用,Fe++能把吸附在它上面的H2O先分解成OH-和H+,因而有助于提高光解水的效率的看法。用UPS和XPS等技术证实了类FeO表面吸附水后存在OH-,确认Fe++关键词:  相似文献   

3.
用不同能量的Ar+和H+轰击WO3表面,观察到W4f峰的位移和加宽。通过谱分解处理得到相应于W4f电子的W6+,W4+和W03个不同的双峰。用表面产生氧缺陷的机理解释了还原过程。UPS谱显示出氧缺陷的存在增加了靠近费密能级处的态密度。H2O的吸附结果说明WO3表面的活性与W5+< 关键词:  相似文献   

4.
王凯  张文华  刘凌云  徐法强 《物理学报》2016,65(8):88101-088101
VO2表面氧缺陷的存在对VO2材料具有显著的电子掺杂效应, 极大地影响材料的本征电子结构和相变性质. 通过2, 3, 5, 6-四氟-7, 7', 8, 8'-四氰二甲基对苯醌(F4TCNQ)分子表面吸附反应, 可以有效消除表面氧缺陷及其电子掺杂效应. 利用同步辐射光电子能谱和X射线吸收谱原位研究了修复过程中电子结构的变化以及界面的化学反应, 发现这种方式使得VO2薄膜样品氩刻后得到的V3+失去电子成功地被氧化成原先的V4+, 同时F4TCNQ分子吸附引起电子由衬底向分子层转移, 界面形成带负电荷的分子离子物种. 受电化学性质的制约, F4TCNQ分子吸附反应修复氧缺陷较氧气氛退火更安全有效, 不会引起表面过度氧化形成V2O5.  相似文献   

5.
周如洪  曹培林 《物理学报》1993,42(3):470-476
用原子交叠和电子离域-分子轨道(ASED-MO)方法和原子集团模型Pt21O2研究了O2与Pt(111)面的相互作用过程。由总能极小,发现O2在Pt(111)面平躺吸附比垂直吸附能量更低,其中O2平行吸附于桥位是最稳定的吸附位,而且O2分子键长伸长到1.35?,与最近的近边X射线吸收精细结构谱(NEXAFS)实验值(1.37±0.05)?符合得很好。同时,衬底向O2 关键词:  相似文献   

6.
C2H4在Ru(1010)表面吸附与分解的研究   总被引:2,自引:0,他引:2       下载免费PDF全文
用X射线电子能谱(XPS)、热脱附谱(TDS)和紫外光电子能谱(UPS)方法研究了乙烯(C2H4)在Ru(1010)表面的吸附,在低温下(200K以下)乙稀(C24)可以在Ru(1010)表面上以分子状态稳定吸附,在200K以上乙烯(C2H 4)则发生了脱氢分解反应.TDS结果表明乙烯(C2H4)分 解后的主要产物为乙炔(C< 关键词: 乙烯 钌(1010)表面 吸附与分解  相似文献   

7.
路战胜  李沙沙  陈晨  杨宗献 《物理学报》2013,62(11):117301-117301
Cu-CeO2体系因其特殊的催化能力而在固体氧化物燃料电池和水煤气转化反应等多个催化领域有重要应用. 采用基于密度泛函理论的第一性原理方法, 在原子和电子层面上系统地研究了单个Cu原子及Cu小团簇在CeO2(110)面上的吸附构型, 价键特性和电子结构, 结果表明: 1) 单个Cu原子的最稳定吸附位是两个表面O的桥位; 2) Cu团簇的稳定吸附构型为扭曲的四面体结构; 3) Cu原子及Cu团簇的吸附在CeO2(110)面的gap区域引入了间隙态, 这些间隙态主要来自于Cu及其近邻的O和表层还原形成的Ce3+, 间隙态的出现表明Cu的吸附增强了CeO2(110)表面的活性; 4) 吸附的单个Cu原子及Cu团簇分别被CeO2(110)面表层的Ce4+离子氧化形成了Cuδ+和Cu4δ+, 并伴随着Ce3+离子的形成, 这个反应可归结为Cux/Ce4+→Cuxδ+/Ce3+; 5) Cu团簇的吸附比Cu单原子的吸附引入了更多的Ce3+离子, 进而形成了更多的Cuδ+-Ce3+催化活性中心. 结合已报道的Cu/CeO2(111)界面特性, 更加全面地探明了Cu与CeO2(111)和(110)两个较稳定低指数表面的协同作用特性, 较为系统地揭示了Cu增强CeO2催化特性的原因及Cu与CeO2协同作用的内在机理. 关键词: 2')" href="#">Cu/CeO2 U')" href="#">DFT+U 吸附 电子结构  相似文献   

8.
利用紫外光电子谱(UPS)对乙烯(C2H4)和乙炔(C2H2)气体在Ru(1010)表面的吸附及与K的共吸附进行了研究,实验结果表明:当衬底温度超过200K,乙烯即发生脱氢反应后,σCH和σCC能级均向高结合能方向移动.在室温下,σCH和σCC能级位置与乙炔在Ru(1010)表面的吸附时的分子能级完全一致.乙烯发生脱氢反应后的主要产 关键词: 乙烯 乙炔 钾 Ru(1010)表面  相似文献   

9.
α-Al2O3(0001)基片表面结构与能量研究   总被引:5,自引:1,他引:4       下载免费PDF全文
对α-Al2O3(0001)晶体表层三种不同终止原子结构的计算模型, 在三维周期边界条件下 的κ空间中,采用超软赝势平面波函数描述多电子体系.应用基于密度泛函理论的局域密度 近似,计算了不同表层结构的体系能量,表明最表层终止原子为单层Al的表面结构最稳定. 对由10个原子组成的菱形原胞进行了结构优化,得到晶胞参数值(a0=0.48178n m)与实验 报道值误差小于1.3%.进一步计算了超晶胞(2×2)表面弛豫,弛豫后原第2层O原子层成为最 表层; 对不同表层O,Al原子最外层电子进行了布居分析,表面电子有更大的概率被定域在 O原子的周围,表面明显地表现出O原子的电子表面态. 关键词: 2O3(0001)')" href="#">α-Al2O3(0001) 超软赝势 表面结构 表面态  相似文献   

10.
Pu(100)表面吸附CO2的密度泛函研究   总被引:1,自引:0,他引:1       下载免费PDF全文
蒙大桥  罗文华  李赣  陈虎翅 《物理学报》2009,58(12):8224-8229
采用广义梯度密度泛函理论的改进Perdew-Burke-Ernzerh方法结合周期性层晶模型,研究了CO2分子在Pu(100)面上的吸附和解离.吸附能和几何构型的计算表明,CO2以穴位C4O4构型吸附最为有利,吸附能为1.48 eV.布居分析和态密度分析表明,CO2与Pu表面相互作用的本质主要是CO2分子的杂化轨道2πμ与Pu5f,Pu6d,Pu7s轨道通过强电子转移和弱重叠杂化的方式相互作用而生成了新的化学键.计算的CO2→CO+O解离能垒为0.66 eV,解离吸附能为2.65 eV, 表明在一定热激活条件下CO2分子倾向于发生解离性吸附.O2,H2,CO和CO2在Pu (100)面吸附的比较分析表明,较低温度下的吸附强度顺序依次为O2,CO,CO2,H2;较高温度下的吸附强度顺序依次为O2,CO2,CO,H2. 关键词: 密度泛函理论 Pu (100) 2')" href="#">CO2 吸附和解离  相似文献   

11.
The electronic structure and vibrational spectrum of the C60 film condensed on a 2H- MoS2(0001) surface have been investigated by X-ray photoelectron spectroscopy (XPS), ul-traviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES) and infrared high-resolution electron-energy-loss spectroscopy (HREELS). AES analysis showed that at low energy side of the main transition, C60 contains a total of three peaks just like that of graphite. However, the energy position of the KLL main Auger transition of C60 looks like that of diamond, indicating that the hybridization of the carbon atoms in C60 is not strictly in sp2- bonded state but that the curvature of the molecular surface introduces some sp2pz- bonded character into the molecular orbitals. XPS showed that the C 1s binding energy in C60 was 285.0eV, and its main line was very symmetric and offered no indication of more than a single carbon species. In UPS measurement the valence band spectrum of C60 within 10eV below the Fermi level (EF) shows a very distinct five-band structure that character-izes the electronic structure of the C60 molecule. HREEL results showed that the spectrum obtained from the C60 film has very rich vibrational structure. At least, four distinct main loss peaks can be identified below 200 meV. The most intense loss was recorded at 66 meV, and relatively less intense losses were recorded at 95, 164 and 197meV at a primary energy of electron beam EP = 2.0eV. The other energy-loss peaks at 46, 136, 157 and 186meV in HREEL spectrum are rather weak. These results have been compared to infrared spectrum data of the crystalline solid C60 taken from recent literatures.  相似文献   

12.
About one monolayer of Ti3+ species is detectable at the surface of reduced SrTiO3(111) single crystals by XPS and UPS. O2, H2 and H2O have been adsorbed in the dark and the decrease on the concentration of the Ti3+ species has been monitored as a function of the gas exposures. Subsequent band gap illumination partially restores the Ti3+ initial concentration in the cases of O2 and H2 exposures but not in the case of H2O. The Ti3+ photogeneration on the oxygen covered surface is associated with oxygen photodesorption as indicated by XPS and UPS. UPS measurements give evidence for surface hydroxylation resulting from water and hydrogen adsorption. The activity of the stoichiometric SrTiO3(111) crystal face for O2 and H2 adsorption is very low when compared with the reduced SrTiO3 samples.  相似文献   

13.
虞心南  张青哲  谢侃  齐上雪  康瑾  林彰达 《物理学报》1983,32(10):1333-1338
本文用UPS,XPS研究了贮氢材料MlNi5(Ml=La,Ce,Pr,Nd)的CO,O2和H2O的中毒,在UPS谱中,我们观察到在EF以下峰α(0.3eV)和峰b(1.2eV)强度随中毒气体暴露量增加有显著变化,并向低动能端位移,逐渐形成肩峰,与此同时,峰c(6eV)和峰d(9.5eV)的强度随暴露量增加而增加,并有能量位移,配合XPS分析,分别确定相应的化学态。氧中毒后的MlNi5,经300℃加氢还原,从UPS谱可以看到峰α,b强度增加;H2O和CO中毒后,在超高真空条件下,分别经300℃加热处理,和Ar+剥离方法,均获得类似的效果,XPS分析进一步证实了这些结果。实验给出了贮氢材料MlNi5中过渡金属镍的d电子与气体自由分子轨道间电荷转移的信息,为在实际应用中认识此类贮氢合金的表面催化中毒和再生提供了依据。 关键词:  相似文献   

14.
The defects at the Si/SiO2 interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO2 interface defect,Hit(0.494), results in the formation of a new interface de-fect, Au-Hit(0.445). Just like the interface defect, Hit(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO2 interface.  相似文献   

15.
高Tc氧化物超导体Bi(Pb)-Sr-Ca-Cu-O(F)的“不可逆线”   总被引:2,自引:0,他引:2       下载免费PDF全文
研究了高Tc氧化物超导体Bi(Pb)-Sr-Ca-Cu-O(F)体系的“不可逆线”。发现不可逆磁场H*<120Oe时,H*=1590(1—t)3/2;当120Oe*<1000Oe时,H*=35700(1—t)3/2-2480。指出H*(T)曲线是一个磁通格子熔化线,在曲线以下属于磁通蠕动区;在H*(T)与Hc2(T)之间属于磁通格子液态区,即磁通流动区。 关键词:  相似文献   

16.
张波  田明亮  张裕恒 《物理学报》2001,50(11):2221-2225
测量了2H-Nb0.9Ta0.1Se2单晶样品在不同电流下电压随磁场变化的曲线V(H),并从V(H)曲线得到V(I)数据.使用标度关系V=α(I-Ic)β进行了拟合,得到了临界电流随磁场Ic(H)和微分电阻随磁场Rd的变化关系.在微分电阻随磁场变化的曲线中,电流较大时,靠近上临界磁场Hc2附近出现一个强峰,而在低电流下,该峰消失.同 关键词: 磁通涡旋 标度定律 临界电流峰效应  相似文献   

17.
This work investigates the origin of novel visible photoluminescence (PL) bands observed in the spinel MgAl2O4:Co2+. Besides the well-known fourfold-coordinated Co2+(Td) PL at 670 nm [N.V. Kuleshov, V.P. Mikhailov, V.G. Scherbitsky, P.V. Prokoshin and K.V. Yumashev, J. Lumin. 55 (1993) 265.], a rich structured PL band at 686 nm was also observed that we associate with uncontrolled impurities of sixfold coordinated Cr3+(Oh) by time-resolved spectroscopy and lifetime measurements and their variation with temperature. We also show that the lifetime of the Co2+(Td) emission at 670 nm varies from τ=6.7 μs to 780 ns on passing from T=10 to 290 K. This unexpected behaviour for Td systems is related to the excited-state crossover (4T12E), making the emission band to transform from a narrow-like emission from 2E at low temperature to a broad structureless band from 4T1 at room temperature.  相似文献   

18.
A photoluminescence band with zero-phonon transitions at ? = 12438 cm-1 (this one subject to self-absorption) and at 12259 cm-1 has been detected with ZnS:Ni crystals. Based on the appearance of these two lines, on the similarity of the whole spectrum with the 3T2(F) → 3T1(F) Ni2+ luminescence, and on preparation evidence, this new emission is interpreted as the 3T1(P) → 3T1(F) transition of substitutional Ni2+(3d8) ions in a tetrahedral crystal field.  相似文献   

19.
冯宏剑  刘发民 《中国物理 B》2008,17(5):1874-1880
First-principles calculations have been performed to investigate the ground state electronic properties of BaFeO3 (BFO). Local spin density approximation (LSDA) plus U (LSDA+U) treatment modified the metallic behaviour to insulated one with a band gap of 4.12eV. The spontaneous polarization was found to be 89.3\muC/cm2 with Berry phase scheme in terms of the modern theory of polarization. Fe-3d eg were split into two singlet states (dz2 and d x2-y2}), and Fe-3d t2g were split into one doublet states(dxz and dyz) and one singlet states(dxy) after Fe and O displaced along the c axis. Meanwhile the occupation numbers of dz2, dyz, dxz and OT pz (on the top of Fe) were increased at the expense of those in xy plane. Our results showed that it was the sensitivity of hybridization to ferroelectric distortions, not just the total change of hybridization, that produced the possibility of ferroelectricity. Moreover, the increasing occupation numbers of OT pz and Fe dz2 favoured the 180o coupling between Fe-3d eg and Fe-3d t2g, leading to ferromagnetic ordering, which has been confirmed by the increase of magnetic moment by 0.13μB per formula unit in the polarized direction. Hence, the magnetization can be altered by the reversal of external electric field.  相似文献   

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