弹性发射光学制造技术研究进展

深紫外光刻、极紫外光刻和先进光源等现代光学工程需求牵引先进光学制造技术持续发展,要求超光滑光学元件表面粗糙度达到原子级水平以及表面全频段面形误差达到RMS(Root Mean Square)亚纳米量级甚至几十皮米,推动超光滑光学元件制造要求不断逼近物理极限。目前,对于如何实现上述超高精度要求的超光滑加工技术及装备仍然存在技术挑战。尤其对如何实现柱面,椭球面,超环面等复杂曲面的原子量级超光滑加工仍是国内外前沿研究方向。弹性发射加工技术是一种去除函数稳定,超低亚表面缺陷,面向原子级的超光滑加工方法,可以作为加工上述精度要求光学元件的手段。本文总结了弹性发射加工技术的国内外研究现状及最新进展,归纳了弹性发射加工技术的原理,包含流体特性、抛光颗粒运动特性和化学特性,弹性发射加工装备,影响弹性发射加工技术表面粗糙度提升和材料去除效率的因素,分析了弹性发射加工技术面临的问题,展望了未来的发展方向,期望为弹性发射加工技术进一步发展和应用提供一定的参考。     

化学机械抛光中纳米颗粒的作用分析

化学机械抛光（chemical mechanical polishing, CMP）是用于获取原子级平面度的有效手 段.目前，CMP的抛光液通常使用纳米级颗粒来加速切除和优化抛光质量.这类流体的流变性 能必须考虑微极性效应的影响.对考虑微极性效应的运动方程的求解，有助于了解CMP的作用 机理.数值模拟表明，微极性将提高抛光液的等效黏度从而在一定程度上提高其承载能力， 加速材料去除.这在低节距或低转速下尤为明显，体现出其具有尺寸依赖性.通过改变抛光液 中粒子的微极性，用实验研究了微极性效应对CMP中材料去除速率的影响，证明了分析的合 理性. 关键词： 化学机械抛光 微极流体 抛光液 流变特性 材料去除速率     

原子发射光谱分析技术在大气等离子体抛光工艺研究中的应用

大气等离子体抛光是一种非接触式的超精密加工方法,它基于低温等离子体化学反应实现原子级的材料去处,避免了表层和亚表层损伤,特别适合于各种难加工材料的超光滑抛光。该方法首次引入了基于电容耦合原理的射频炬式等离子体源,为测试等离子体特性和进行工艺研究,在加工过程中使用微型光纤光谱仪进行光谱监测和采集,进而运用原子发射光谱分析技术初步讨论了射频功率和气体配比对加工过程的影响,分析结果显示：在一定范围内,射频功率对加工速率有着较明显的促进作用,而气体配比对等离子体区成分和表面生成元素的种类影响较大。电子跃迁轨道分析还揭示了处于不同激发态的活性氟原子对应的不同微观状态,为进一步的微观机理研究奠定了理论基础。基于工艺分析的结果,在单晶硅片上实现了Ra0.6 nm的表面粗糙度和32 mm3·min-1的加工速率。     

面向原子制造的框架核酸研究进展

框架核酸是核酸分子通过自组装形成的一维到三维的框架结构,不仅能精准定位功能基元,还可实现在纳米甚至原子级尺度上进行力学、光学和电学等物理性质,以及单分子水平化学与生化反应的精准调控.利用框架核酸对物质进行原子级的人工自组装,可实现基本构筑单元的精准物理排布与功能化集成,进而实现器件制造,有望推动从原子到宏观的精确功能化的制备.本文围绕框架核酸和原子制造两大前沿的交叉领域,阐述框架核酸在原子级精准构筑方面的可行性和优势,首先介绍了具有原子级精准性的框架核酸的构建,以及利用框架核酸进行功能化组装的一般策略,然后着重探讨框架核酸在器件构筑方面的研究进展,最后就面向原子制造的未来发展方向进行了展望.     

DNA折纸结构介导的多尺度纳米结构精准制造

原子及近原子尺度制造在近年来一直是物质科学领域被广泛探讨的前沿问题.当制造和加工的尺度从微米、纳米逐渐走向原子级别时,材料在常规尺度下所具备的性质已无法通过经典理论进行解释,相反地,会在这一尺度下展现出一系列新奇的特性.因而对材料极限制造尺度和颠覆性物性的不断追求始终是科学界共同关注的重点领域.作为一种在纳米尺度下对结构制造单元进行精细操控的先进手段,DNA纳米技术的开发和发展为纳米制造甚至原子制造提供了新的观点和思路,而DNA折纸术作为DNA纳米技术的重要组成部分,正在凭借其在结构制造过程当中的高度可编程性成为纳米尺度下进行各类物质精准制造的独特的解决方案,并可能为不同物质不同材料更小尺度和任意形状的精准构筑带来机遇.本文首先简单概述了DNA折纸术的基本原理和发展历程,然后根据制造策略的不同对DNA折纸结构的纳米制造的相关代表性工作做了总结,并在文末提出了对于DNA折纸结构在原子制造中的可行性的思考和未来发展方向的展望.     

超光滑表面及其制造技术的发展

超光滑表面制造技术是超精密加工技术的一个重要分支。通过介绍超光滑表面的特征、应用及其制造技术的发展,希望给出超光滑表面技术的整体轮廓。在介绍超光滑表面的概念及其主要特征的基础上,通过典型例证指出了超光滑表面的软X射线光学、激光陀螺等科技领域的重要应用。回顾了超光滑表面制造技术的发展过程,对各种超光滑表面加工原理与方法进行了简单描述与评价。最后提出了对超光滑表面制造技术的发趋势的观点。     

原子层厚度超表面光场调控原理及应用

超表面由亚波长尺度二维人工微结构构成,可以实现对光场振幅、相位、偏振等多参量进行调控,为光场调控提供了优良平台。二维材料作为一种新型层状结构材料,相对于三维体材料有着十分独特的光学和电学特性,其与超表面结合为纳米尺度平面光学器件的发展提供了新的可能。本文综述了基于原子层厚度的二维材料超表面发展,介绍了多种二维材料超表面光场调控机制、制备以及应用,最后对原子层厚度超表面发展面临的挑战和潜在应用进行展望。     

高准确度玻璃光学元件的CMP技术研究

依据化学机械抛光（Chemical Mechanical Polishing,CMP）加工玻璃光学元件的原理,通过对抛光运动机理的理论分析,提出了抛光垫的磨削均匀性对光学元件面形的影响,并设计了新的工艺流程.通过工艺试验,完成了高准确度玻璃光学元件的CMP加工,获得了表面质量N<0.2,Rq<0.3 nm的玻璃光学元件.     

金属纳米颗粒与二维材料异质结构的界面调控和物理性质

二维材料具有原子级光滑表面、纳米级厚度和超高的比表面积,是研究金属纳米颗粒与二维材料的界面相互作用,实时、原位观察金属纳米颗粒的表面原子迁移、结构演化和聚合等热力学行为的重要载体.设计和构筑金属纳米颗粒与二维材料异质结构界面,在原子尺度分析和表征界面结构,揭示材料结构和性能之间的相互关系,对于理解其相互作用和优化器件性能具有重要价值.本文总结了近年来金属纳米颗粒在二维材料表面成核、生长、结构演化及其表征的最新进展,分析了金属纳米颗粒对二维材料晶体结构、电子态、能带结构的影响,探讨了可能的界面应变、界面反应,及其对电学和光学等性质的调控,讨论了金属纳米颗粒对基于二维材料的场效应管器件和光电器件的性能提升策略.为从原子、电子层次揭示微结构、界面原子构型等影响金属纳米颗粒-二维材料异质结性能的物理机制,为金属-二维材料异质结构的研制及其在电子器件、光电器件、能源器件等领域的应用奠定了基础.     

单原子操纵及原子尺度器件加工的最新进展

扫描隧道显微镜的发明不仅使得人们的视野可以直接观察到物质表面上的原子及其结构并进而分析物质表面的化学和物理性质,它还使得人们可以在纳米尺度上对材料表面进行各种加工处理,甚至可以控制和操纵单个原子。这一特定的应用将会使人类从目前微米尺度的加工技术迅速跨入纳米尺度和原子尺度。这将会是推动人类科学和技术发展的一个无法估量和替代的动力。本文将介绍在工业界应用最为广泛的半导体材料硅（Ｓｉ）表面上单原子操纵研究的最新进展,并讨论它们在单原子存储器加工中的应用。     

Models of nanoparticles movement,collision, and friction in chemical mechanical polishing (CMP)

Nanoparticles have been widely used in polishing slurry such as chemical mechanical polishing (CMP) process. The movement of nanoparticles in polishing slurry and the interaction between nanoparticles and solid surface are very important to obtain an atomic smooth surface in CMP process. Polishing slurry contains abrasive nanoparticles (with the size range of about 10–100 nm) and chemical reagents. Abrasive nanoparticles and hydrodynamic pressure are considered to cause the polishing effect. Nanoparticles behavior in the slurry with power-law viscosity shows great effect on the wafer surface in polishing process. CMP is now a standard process of integrated circuit manufacturing at nanoscale. Various models can dynamically predict the evolution of surface topography for any time point during CMP. To research, using a combination of individual nanoscale friction measurements for CMP of SiO₂, in an analytical model, to sum these effects, and the results scale CMP experiments, can guide the research and validate the model. CMP endpoint measurements, such as those from motor current traces, enable verification of model predictions, relating to friction and wear in CMP and surface topography evolution for different types of CMP processes and patterned chips. In this article, we explore models of the microscopic frictional force based on the surface topography and present both experimental and theoretical studies on the movement of nanoparticles in polishing slurry and collision between nanoparticles, as well as between the particles and solid surfaces in time of process CMP. Experimental results have proved that the nanoparticle size and slurry properties have great effects on the polishing results. The effects of the nanoparticle size and the slurry film thickness are also discussed.     

Ultra-smooth platinum surfaces for nanoscale devices fabricated using chemical mechanical polishing

A technique involving two steps of chemical mechanical polishing (CMP) has been developed to produce ultra-smooth metal surfaces with an RMS roughness better than 0.1 nm. A figure of merit termed degree of smoothness (DOS) is proposed for the purpose of quantifying the extent of smoothness of a polished metal surface. A post CMP metal slurry cleaning solution was used for cleaning Pt slurry for the first time and by applying special techniques, a very high quality clean surface was attained. Applications of the polished Pt electrodes in interfacing molecular switching devices with self-assembled monolayers of molecules have been found to dramatically improve the packing and orientation of the molecular monolayer with a huge improvement in the molecular electronics device yields. These smooth metal surfaces may open doors for new opportunities in future nanoscale devices. PACS 81.05.Bx; 81.16.Rf; 81.65.Ps     

Effect of Chemicals on Chemical Mechanical Polishing of Glass Substrates

We investigate the effect of chemicals on chemical mechanical polishing （CMP） of glass substrates. Ceria slurry in an ultra-low concentration of 0.25 wt. % is used and characterized by scanning electron microscopy. Three typical molecules, i.e. acetic acid, citric acid and sodium acrylic polymer, are adopted to investigate the effect on CMP performance in terms of material removal rate （MRR） and surface quality. The addition of sodium acrylic polymer shows the highest MRR as well as the best surface by atomic force microscopy after CMP, while the addition of citric acid shows the worst performance. These results reveal a mechanism that a long-chain molecule without any branches rather than small molecules and common molecules with ramose abundant-electron groups is better for the dispersion of the slurry and thus better for the CMP process.     

A nano-scale mirror-like surface of Ti–6Al–4V attained by chemical mechanical polishing

Metal Ti and its alloys have been widely utilized in the fields of aviation, medical science, and micro-electromechanical systems, for its excellent specific strength, resistance to corrosion, and biological compatibility. As the application of Ti moves to the micro or nano scale, however, traditional methods of planarization have shown their short slabs.Thus, we introduce the method of chemical mechanical polishing(CMP) to provide a new way for the nano-scale planarization method of Ti alloys. We obtain a mirror-like surface, whose flatness is of nano-scale, via the CMP method. We test the basic mechanical behavior of Ti–6Al–4V(Ti64) in the CMP process, and optimize the composition of CMP slurry.Furthermore, the possible reactions that may take place in the CMP process have been studied by electrochemical methods combined with x-ray photoelectron spectroscopy(XPS). An equivalent circuit has been built to interpret the dynamic of oxidation. Finally, a model has been established to explain the synergy of chemical and mechanical effects in the CMP of Ti–6Al–4V.     

Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching

Mechanical grinding, chemical mechanical polishing (CMP) and dry etching process are integrated to remove sapphire substrate for fabricating thin-film light-emitting diodes. The thinning of sapphire substrate is done by fast mechanical grinding followed by CMP. The CMP can remove or reduce most of the scratches produced by mechanical grinding, recovering both the mechanical strength and wafer warpage to their original status and resulting in a smoother surface. The surface morphology and surface roughness on grinded and polished sapphire substrate are measured by using atomic force microscopy (AFM). The etch rates of sapphire by BCl₃-based dry etching are reported. Pattern transfer to the physical and chemical stability of sapphire is made possible by inductively coupled plasma (ICP) etch system that generates high density plasma. The patterning of several microns period in sapphire wafer by using a combination of BCl₃/Ar plasma chemistry and SiO₂ mask is presented. The anisotropic etch profile formed on sapphire wafer is obtained from scanning electron microscopy (SEM) images.     

Effect of additives for higher removal rate in lithium niobate chemical mechanical planarization

High roughness and a greater number of defects were created by lithium niobate (LN; LiNbO₃) processes such as traditional grinding and mechanical polishing (MP), should be decreased for manufacturing LN device. Therefore, an alternative process for gaining defect-free and smooth surface is needed. Chemical mechanical planarization (CMP) is suitable method in the LN process because it uses a combination approach consisting of chemical and mechanical effects. First of all, we investigated the LN CMP process using commercial slurry by changing various process conditions such as down pressure and relative velocity. However, the LN CMP process time using commercial slurry was long to gain a smooth surface because of lower material removal rate (MRR). So, to improve the material removal rate (MRR), the effects of additives such as oxidizer (hydrogen peroxide; H₂O₂) and complexing agent (citric acid; C₆H₈O₇) in a potassium hydroxide (KOH) based slurry, were investigated. The manufactured slurry consisting of H₂O₂-citric acid in the KOH based slurry shows that the MRR of the H₂O₂ at 2 wt% and the citric acid at 0.06 M was higher than the MRR for other conditions.     

Automatic recognition and evaluation of micro-contaminant particles on ultra-smooth optical substrates using image analysis method

Micro-contaminant particles on surface of optical substrate have unfavorable influence on light characteristics and instability of optical devices. Proper recognition and evaluation of micro-contaminant particles on post-cleaning substrate are important in fabricating high-performance optical substrates. Based on image analysis and difference of gray scale threshold in image zones, this paper presents a technique for automatically recognizing micro-contamination, and the relevant software developed for on-line evaluation of the level of cleanliness on ultra-smooth optical substrate. Using the self-developed software incorporating high-resolution microscope, optical yttrium iron garnet (YIG) and K8 substrate surfaces of post-chemical mechanical polishing (CMP) were investigated. Results from analyzing the YIG and K8 optical substrates before-and-after laser cleaning illustrated the success of the developed automatic recognition and on-line evaluation system in identifying the micro-contaminant particles on the ultra-smooth substrate surface.     

Removal of scratch on the surface of MgO single crystal substrate in chemical mechanical polishing process

Etching and chemical mechanical polishing (CMP) experiments of the MgO single crystal substrate with an artificial scratch on its surface are respectively performed with the developed polishing slurry mainly containing 2 vol.% phosphoric acid (H₃PO₄) and 10-20 nm colloidal silica particles, through observing the variations of the scratch topography on the substrate surface in experiments process, the mechanism and effect of removing scratch during etching and polishing are studied, some evaluating indexes for effect of removing scratch are presented. Finally, chemical mechanical polishing experiments of the MgO substrates after lapped are conducted by using different kinds of polishing pads, and influences of the polishing pad hardness on removal of the scratches on the MgO substrate surface are discussed.     

超光滑表面的形成与抛光时间之间的关系研究

由于加工超光滑表面的古典法对加工者的经验要求较高,而且不同的加工者对抛光时间长短的控制也有较大的差别,因而下盘时机的准确判断将会对超光滑表面的加工质量产生严重的影响。为此,对所加工的全反射棱镜的超光滑表面抛光不同的时间,并在全反射条件下,根据全反射棱镜背向散射光斑的大小和亮暗的程度来判断所加工超光滑表面加工质量的检测方法,最终给出超光滑表面的抛光质量随抛光时间的变化。在实验结果的基础上得出了抛光质量随抛光时间交替变化的基本规律,并根据加工经验总结出了超光滑表面加工过程中的注意事项和判断下盘时机的基本方法。