Cu对用于高速相变存储器的Sb2Te薄膜的结构及相变的影响研究

采用原位X射线衍射仪、拉曼光谱仪和X射线反射仪分别研究了Cu-Sb₂Te 薄膜的微结构、成键结构和结晶前后的密度变化. Sb₂Te薄膜的结晶温度随着Cu含量的增加而增大. 在10 at.%和14 at.% Cu的Sb₂Te薄膜中, Cu与 Te 成键, 结晶相由六方相的Cu₇Te₄、菱形相的Sb及六方相的Sb₂Te构成. 10 at.% 和14 at.% Cu 的Sb₂Te薄膜在结晶前后的厚度变化分别约为3.2%和 4.0%, 均小于传统的Ge₂Sb₂Te₅ (GST)薄膜. 制备了基于Cu-Sb₂Te薄膜的相变存储单元, 并测试了其器件性能. Cu-Sb₂Te器件均能在10 ns的电脉冲下实现可逆SET-RESET操作. SET和RESET操作电压随着Cu含量的增加而减小. 疲劳测试结果显示, Cu 含量为10 at.%和14 at.%的PCRAM单元的循环操作次数分别达到1.3×10⁴和1.5×10⁵, RESET和SET态的电阻比值约为100. Cu-Sb₂Te可以作为应用于高速相变存储器(PCRAM)的候选材料.     

单晶菱形CeOHCO3片状物的制备及其向CeO2的热转换

以硝酸铈铵和尿素为反应物,γ-氨丙基三乙氧基硅烷(KH550)为助剂,通过沉淀反应制得了单晶菱形CeOHCO3片状物。然后将CeOHCO3在600℃空气气氛中灼烧获得了菱形CeO2。通过XRD和SEM对反应物中是否含有KH550助剂所得的产物进行了分析,结果发现只有含有KH550才能获得菱形CeOHCO3片状物,并且在灼烧过程中产物的形貌仍保持菱形。然后采用TEM对菱形CeOHCO3和CeO2进行了表征,结果发现CeOHCO3为单晶产物而灼烧后所得的CeO2为多晶产物。     

氮掺杂碳球/银纳米材料用作过氧化氢传感器

以氮掺杂碳球作为载体负载银纳米材料,并将其用作非酶电化学传感器对过氧化氢进行检测.考察了过氧化氢浓度、扫描速率对电化学信号的影响,并采用计时电流法对传感器的性能进行了研究.电化学测试结果表明,该复合材料在磷酸缓冲溶液中对过氧化氢还原响应快速、稳定,重复性良好,可以达到1.5μmol/L的检出限.     

C70O2可能异构体的结构和电子光谱的理论研究＊

用AM1、 PM3及INDO系列方法研究了C     

Crystallization Process of Superlattice-Like Sb/SiO_2 Thin Films for Phase Change Memory Application

After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature(~240°C), larger crystallization activation energy(6.22 e V), and better data retention ability(189°C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO_2(7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO_2(7 nm) thin film shows a low thermal conductivity of 0.13 W/(m·K).     

Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture.Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality,purity,and accurate composition control.However,the conventional physical vapor deposition process cannot meet the gapfilling requirement with the critical device dimension scaling down to 90 nm or below.In this study,we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process,especially at the nano-scale critical dimension.The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed.We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling.We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process.We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.     

Chemical mechanical planarization of Ge_2Sb_2Te_5 using IC1010 and Politex reg pads in acidic slurry

In the paper, chemical mechanical planarization(CMP) of Ge2Sb2Te5(GST) is investigated using IC1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate(RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope(OM) and scanning electron microscope(SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO2 film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010.     

用有限场和耦合微扰方法对N—氧化吡啶及其—NH2,—NO2单？…

用ＦＦ／ＰＭ３,ＦＦ／ＡＭ１,ＣＰＨＦ／ＰＭ３方法,对Ｎ－氧化吡啶及其－ＮＨ２,－ＮＯ２单双取代衍生物体系的非线性光学性质进行了理论研究。结果表明,这类化合物具有很好的非线性光学性质,其中２－ＮＨ２－５－ＮＯ２－Ｐｙ－１－Ｏ和２－ＮＨ２－４－ＮＯ２－Ｐｙ－１－Ｏ的二阶非线性光学系数均很大,而２－ＮＨ２－５－ＮＯ２－Ｐｙ－１－Ｏ三阶非线性光学系数最大,且略大于１－ＮＨ２－４－ＮＯ２－Ｐｈ。     

Ga1-xInxNyAs1-y/GaAs量子阱中电子-LO声子的散射率

在有效质量近似下利用打靶法求出Ga_1-xIn_xN_yAs_1-y/GaAs量子阱中的本征能级E_n, 并通过费米黄金规则计算电子-LO声子由第一激发态到基态的散射率和平均散射率随温度、阱宽以及氮(N)和铟(In)组分变化的规律. 计算结果表明: 在In 组分恒定的情况下, 随着N组分的增加, 散射率和平均散射率增加; 在N组分恒定的情况下, 随着In组分的增加, 散射率和平均散射率减小; 随着温度的增加, 在温度较低时散射率和平均散射率随温度的增加变化不大, 在温度较高时随温度的增加而增加; 随着阱宽的增加, 散射率和平均散射率都是先增加到一个最大值, 然后再减小, 最大值出现在阱宽200 Å附近. 计算结果对Ga_1-xIn_xN_yAs_1-y/GaAs量子阱在光电子器件应用方面有一定的指导意义. 关键词： 费米黄金规则 1-xIn_xN_yAs_1-y/GaAs量子阱')" href="#">Ga_1-xIn_xN_yAs_1-y/GaAs量子阱 LO声子 散射率     

HPLC分离化学发光检测药物中的马钱子碱,士的宁和麻黄类…

在ＫＭｎＯ４－Ｈ＾＋－还原剂体系中研究了马钱子碱，士的宁和麻黄类生物碱的化学发光行为，建立了其快速灵敏的流动注射化学发光分析方法，将此法与ＨＰＬＣ联用，实现了上述物质的选择性测定。此法已用于一些药笺中马钱子碱等物碱的测定，回收率为９４％－１０１％。