High quality NbTiN films fabrication and rapid thermal annealing investigation

NbTiN thin films are good candidates for applications including single-photon detector, kinetic inductance detector, hot electron bolometer, and superconducting quantum computing circuits because of their favorable characteristics,such as good superconducting properties and easy fabrication.In this work, we systematically investigated the growth of high-quality NbTiN films with different thicknesses on Si substrates by reactive DC-magnetron sputtering method.After optimizing the growth conditions, such as the gas pressure, Ar/N_2 mixture ratio, and sputtering power, we obtained films with excellent superconducting properties.A high superconducting transition temperature of 15.5 K with narrow transition width of 0.03 K was obtained in a film of 300 nm thickness with surface roughness of less than 0.2 nm.In an ultra-thin film of 5 nm thick, we still obtained a transition temperature of 7.6 K.In addition, rapid thermal annealing(RTA) in atmosphere of nitrogen or nitrogen and hydrogen mixture was studied to improve the film quality.The results showed that Tc and crystal size of the NbTiN films were remarkably increased by RTA.For ultrathin films, the annealing in N_2/H_2 mixture had better effect than that in pure N2.The T_c of 10 nm films improved from 9.6 K to 10.3 K after RTA in N_2/H_2 mixture at 450℃.     

Fabrication of VO_2 thin film by rapid thermal annealing in oxygen atmosphere and its metal–insulator phase transition properties

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal–insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from(1ˉ11) to(011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal–insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal–insulator transition.     

Probing thermal properties of vanadium dioxide thin films by time-domain thermoreflectance without metal film

Vanadium dioxide(VO_2) is a strongly correlated material, and it has become known due to its sharp metal–insulator transition(MIT) near room temperature. Understanding the thermal properties and their change across MIT of VO_2 thin film is important for the applications of this material in various devices. Here, the changes in thermal conductivity of epitaxial and polycrystalline VO_2 thin film across MIT are probed by the time-domain thermoreflectance(TDTR) method.The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO_2 film to attenuate the impact from extra thermal interfaces. It is demonstrated that the method is feasible for the VO_2 films with thickness values larger than 100 nm and beyond the phase transition region. The observed reasonable thermal conductivity change rates across MIT of VO_2 thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate, which is different from the reported behavior of single crystal VO_2 nanowires. The recovery of the relationship between thermal conductivity and electrical conductivity in VO_2 film may be attributed to the increasing elastic electron scattering weight, caused by the defects in the film. This work demonstrates the possibility and limitation of investigating the thermal properties of VO_2 thin films by the TDTR method without depositing any metal thermoreflectance layer.     

Superconductivity of bilayer titanium/indium thin film grown on SiO_2/Si(001)

Bilayer superconducting films with tunable transition temperature(Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium(Ti/In) bilayer superconducting films are successfully fabricated on SiO_2/Si(001)substrates by molecular beam epitaxy(MBE). The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150?C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 m K to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.     

Optical properties of rubrene thin film prepared by thermal evaporation

Rubrene thin films are deposited on quartz substrates and silver nanoparticles(Ag NPs) films by the thermal evaporation technique. The optical properties of rubrene thin film are investigated in a spectral range of 190 nm–1600 nm. The analysis of the absorption coefficient(α) reveals direct allowed transition with a corresponding energy of 2.24 e V. The photoluminescence(PL) peak of the rubrene thin film is observed to be at 563 nm(2.21 e V). With the use of Ag NPs which are fabricated by radio-frequency(RF) magnetron sputtering on the quartz, the PL intensity is 8.5 times that of as-deposited rubrene thin film. It is attributed to the fact that the surface plasmon enhances the photoluminescence.     

Physical Properties Revealed by Transport Measurements for Superconducting Nd_(0.8)Sr_(0.2)NiO_2 Thin Films

The newly discovered superconductivity in infinite-layer nickelate superconducting films has attracted much attention,largely because their crystalline and electronic structures are similar to those of high-T_c cuprate superconductors.The upper critical field can provide a great deal of information on the subject of superconductivity,but detailed experimental data are still lacking for these films.We present the temperature-and angle-dependence of resistivity,measured under different magnetic fields H in Nd_(0.8)Sr_(0.2)NiO_2 thin films.The onset superconducting transition occurs at about 16.2 K at 0 T.Temperature-dependent upper critical fields,determined using a criterion very close to the onset transition,show a clear negative curvature near the critical transition temperature,which can be explained as a consequence of the paramagnetically limited effect on superconductivity.The temperaturedependent anisotropy of the upper critical field is obtained from resistivity data,which yields a value decreasing from 3 to 1.2 with a reduction in temperature.This can be explained in terms of the variable contribution from the orbital limit effect on the upper critical field.The angle-dependence of resistivity at a fixed temperature,and at different magnetic fields,cannot be scaled to a curve,which deviates from the prediction of the anisotropic Ginzburg-Landau theory.However,at low temperatures,the resistance difference can be scaled via the parameter Hβ| cos θ|(β=6-1),with θ being the angle enclosed between the c-axis and the applied magnetic field.As the first detailed study of the upper critical field of nickelate thin films,our results clearly indicate a small anisotropy,and a paramagnetically limited effect,in terms of superconductivity,in nickelate superconductors.     

TixSb2Te Thin Films for Phase Change Memory Applications

Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d.     

Fabrication processing effects on microstructure and morphology of erbium film

The effects of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the erbium films are grown by the electron-beam vapor deposition (EBVD). A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200 ℃ have (002) preferred orientation, and the films deposited at 450 ℃ have mixed (100) and (101) texture, which are due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum (FWHMs) of erbium diffraction lines (100), (002), and (101) shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with the increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth films, and is counteracted by the tensile stress formed during the process of temperature cooling down to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of substrate--film couple.     

Magnetotransport properties of La0.67Ca0.33MnO3//La0.67Sr0.33MnO3 bilayers

The perovskite bilayers La0.67Ca0.33MnO3 （LCMO） （100 nm） / La0.67Sr0.33MnO3（LSMO） （100 nm） and LSMO （100 nm） / LCMO （100 nm） are fabricated by a facing-target sputtering technique. Their transport and magnetic properties are investigated. It is found that the transport properties between them are different obviously due to distinguishable structures, and the different lattice strains in both films result in the difference of metal-to-insulator transition. Only single-step magnetization loop appears in our bilayers from 5K to 320K, and the coercive force of LSMO/LCMO varies irregularly with a minimum ～ 2387A/m which is lower than that of LCMO and LSMO single layer films. The behaviour is explained by some magnetic coupling.     

Fabrication and Characterization of Nanocrystalline VO2 Thin Films

Nanocrystalline VO2 films with phase transition temperature 34℃ have been fabricated on SiaN4-film-coated silicon and quartz substrates by argon-annealing films of metastable VO2(B). The original VO2(B) films are obtained by ion beam sputtering in an argon-oxygen atmosphere at 200℃. The nanocrystalline VO2 films exhibit strong changes in electrical and optical properties when a phase transition is completed. The phase transition temperature in the as-fabricated samples is about 34℃, which is smaller in comparison with 68℃ in the singlecrystalline VO2 material. A lower phase transition temperature is favorable for device applications such as smart window coating and low power consumption optical switching.     

MgB2超导膜的厚度与其Jc(5K,0T)的关系

通过混合物理化学气相沉积法 (hybrid physical-chemical vapor deposition, HPCVD), 在(000l) SiC 衬底上制得一系列从10 nm到8 μm的MgB₂超导膜样品, 并对它们的形貌、超导转变温度T_c 和临界电流密度J_c与膜厚度的关系进行了研究. 观察到T_c随膜厚度增加上升到最大值后, 尽管膜继续增厚, 但T_c值保持近乎平稳, 而J_c则先随膜厚度增加上升到最高值后, 继而则随膜的厚度的增加而下降. MgB₂膜的T_c(0)和T_c(onset)值与膜厚的关系基本一致, T_c(0)在膜厚为230 nm处达到最大值T_c(0)=41.4 K, 而J_c(5K,0T)在膜厚为100 nm时达到最大值, J_c (5 K, 0 T)=2.3×10⁸A·cm^-2, 这也说明了我们能用HPCVD方法制备出高质量干净MgB₂超导膜. 本文研究的超导膜厚度变化跨度非常大, 从10 nm级的超薄膜到100 nm级的薄膜, 再到几微米的厚膜, 如此T_c和J_c对膜厚度变化的依赖就有了较完整、成体系的研究. 并且本文的工作对MgB₂超导薄膜制备的厚度选取具有实际应用意义. 关键词： 2超导膜')" href="#">MgB₂超导膜 混合物理化学气相沉积法 厚度 临界电流密度     

Design,fabrication, and characterization of Ti/Au transition-edge sensor with different dimensions of suspended beams

For photon detection, superconducting transition-edge sensor (TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devices were designed and implemented with a thickness ratio of 1:1 and different suspended structures using micromachining technology. The characteristics were evaluated and analyzed, including surface morphology, 3D deformation of suspended Ti/Au TES device structure, I-V characteristics, and low-temperature superconductivity. The results showed that the surface of Ti/Au has good homogeneity and the surface roughness of Ti/Au is significantly increased compared with the substrate. The structure of Ti/Au bilayer film significantly affects the deformation of suspended devices, but the deformation does not affect the I-V characteristics of the devices. For devices with the Ti/Au bilayer (150μm×150μm) and beams (100μm×25μm), the transition temperature (T_c) is 253 mK with a width of 6 mK, and the value of the temperature sensitivity α is 95.1.     

Slow relaxation and avalanches in the spin-paramagnetic transition of a thin film granular superconductor

We report measurements of the superconducting to normal transition of ultra-thin granular Al films in parallel magnetic fields, H. The parallel critical field,H_c, in our samples is Pauli spin-paramagnetically limited. We find that the critical field transition goes from second-order to strongly first-order at a tricritical point, T_tr, near 250 mK. The first-order transition is characterized by a giant hysteresis in the critical field, ΔH_c 2.5 kG. In the hysteretic region we find that the films are far out of thermodynamic equilibrium and exhibit very slow, τ 10⁴s, glass-like, stretched-exponential relaxation. In addition, we observe significant avalanches. These observations are discussed in terms of a random array of Josephson junctions.     

Evolution of superconductivity and charge order in pressurized RbV3Sb5

The kagome metals AV₃Sb₅(A=K,Rb,Cs)under ambient pressure exhibit an unusual charge order,from which superconductivity emerges.In this work,by applying hydrostatic pressure using a liquid pressure medium and carrying out electrical resistance measurements for RbV₃Sb₅,we find that the charge order becomes suppressed under a modest pressure pc(1.4 GPa3Sb₅.Our findings point to qualitatively similar temperature-pressure phase diagrams in KV₃Sb₅ and RbV₃Sb₅,{and suggest a close link}between the second superconducting dome and the high-pressure resistance anomalies.     

Surface morphology and electrical properties of Bi---Sr---Ca---Cu---O thin films deposited by reactive sputtering from multiple targets

Smooth, superconducting films of Bi₂Sr₂CaCu₂O_8+° have been prepared by reactive sputtering from elemental targets in the presence of ozone. The influence of substrate temperature, deposition rate, and ozone pressure on the resulting films are discussed. Films deposited on SrTiO₃ substrates are c-axis oriented and featureless for substrate temperatures below 710°C. Above this temperature, small inclusions of CuO appear. Films on MgO exhibit mixed a-axis and c-axis orientation below about 710°C, and inclusions of CuO above this temperature. The temperature at which this transition occurs increases with increasing deposition rate. T_c increases and then decreases sharply with decreasing oxygen content. The oxygen partial pressure corresponding to the maximum T_c of 77 K is well above the thermodynamic stability limit for Bi₂Sr₂CaCu₂O_8+°, suggesting that an optimum carrier concentration has been achieved for these films.     

The effects of substrate temperature on the superconducting properties of Tl2Ca2Ba2Cu3O10 films sputter-deposited from stoichiometric oxide targets

The annealing characteristics and the superconducting properties of Tl₂Ca₂Ba₂Cu₃O₁₀ thin films sputter-deposited onto yttrium- stabilized ZrO₂ substrate at up to 500°C from two stoichiometric oxide targets are reported. The films deposited at 400–500°C were found to require a lower post-annealing temperature than the films deposited at lower temperatures to attain the highest T_c superconducting state, due to a more pronounced Ba diffusion toward the substrate as indicated by their secondary ion mass spectrometry depth profiles. The highest T_c achieved tends to degrade with increasing substrate temperatures, a zero resistance T_c of 121 and ≈90 K, respectively, being observed for the films deposited at -ambient temperature and at 500°C. The formation of the highest T_c phase (Tl₂Ca₂Ba₂Cu₃O₁₀) generally is associated with a sheet type of crystal growth morphology with smooth and aligned surfaces which can be obtained only from the films capable of sustaining prolonged annealing at 900°C. Annealing at lower temperatures (≈860°C) results in the formation of rod or sphere type of morphologies with rough and randomly oriented crystals and the lower T_c phases such as Tl₂Ca₁Ba₂Cu₂O₈.     

Improvements of performance on sputter-coated niobium films for superconducting cavities by adding a NbN interlayer

A new type of superconducting film is studied at Peking University in order to improve the properties of sputter-coated films for superconducting cavities. NbN film and NbN–Nb film have been prepared by DC diode sputtering technology at certain nitrogen content and temperature. NbN film is prepared between copper and Nb film as a barrier against copper diffusion into Nb. Micro-structure analyses show that the NbN–Nb films grow well on the copper substrate. The T_c of the Cu–NbN–Nb increases to 9.5 K compared to the 9.2 K transition temperature of bulk Nb.     

Properties of a local pairing model of high-Tc superconductivity

A simulation technique is used to study the properties of the “hole modulated hopping” model introduced by Hirsch. The superconducting order parameter, energy gap and pair size have been determined for a range of particle densities and temperatures in the neighbourhood of the superconducting phase transition. Results are consistent with the interpretation of the superconducting transition to be Bose-like at low hole densities and BCS-like at high hole densities, with a crossover near the T_c maximum in the T_c versus hole density curve. This behaviour is related to the existence of small non-overlapping pairs at low hole densities and large strongly interpenetrating pairs at hole densities above the T_c maximum.     

Microscopic measurements in La-NQR of the ternary carbide superconductor LaNiC2

¹³⁹La-NQR measurements have been carried out in the ternary carbide superconductor LaNiC₂. The nuclear quadrupole frequency and the asymmetry parameter of ¹³⁹La in LaNiC₂ were estimated to be about 1.9 MHz and 0, respectively. In the normal state, the nuclear spin relaxation rate (1/T₁) in the ¹³⁹La NQR signal was proportional to temperature (T) in zero external field above the superconducting transition temperature (T_c) or in an external field larger than the superconducting critical field, which means the system is in the Fermi-liquid state. In the superconducting state, on the other hand, 1/T₁ decreases no more linearly with T, but decreases rapidly exponentially as exp (−Δ/k_BT) at low T with an appreciable enhancement just below T_c. The value of the superconducting energy gap, 2Δ, was estimated to be 3.34k_BT_c, compared with 3.52k_BT_c of the BCS-value. This result strongly suggests that the superconductivity in LaNiC₂ is of a conventional BCS type.     

Effect of pressure on the superconducting primitive cubic and “polymeric” phases of Na2CsC60

The pressure dependence of the superconducting transition temperature, T_c, has been determined using several gaseous pressure media and a variety of pressure-temperature cycles, both of which profoundly affect T_c. The orthorhombic “polymer” phase discussed by Zhu is found to be superconducting. Models for the unexpected behavior are discussed.