| Au/a-Si:H界面X射线光电子能谱和俄歇电子能谱研究 |
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| 引用本文： | 钟战天,王大文,廖显伯,范越,李承芳,牟善明.Au/a-Si:H界面X射线光电子能谱和俄歇电子能谱研究[J].物理学报,1991,40(2):275-280. |
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| 作者姓名： | 钟战天 王大文 廖显伯 范越 李承芳 牟善明 |
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| 作者单位： | (1)清华大学无线电电子学系; (2)中国科学院半导体研究所,北京,100083; (3)中国科学院表面物理实验室,北京,100080 |
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| 摘 要： | 采用x射线光电子能谱(XPS)和俄歇电子能谱(AES)对Au/a-Si:H界面进行了研究。实验表明,Au/a-Si:H界面最初形成过程是以金属团生长形式出现,当Au淀积量超过一定值后,Au和Si开始互扩散并进行化学反应,结果形成Au-Si互溶区。利用光发射方法证实,热处理Au/a-Si:H界面导致淀积膜中Si岛形成。
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| 关 键 词： | Au a－Si：H 界面 XPS AES |
| 收稿时间： | 4/9/1990 12:00:00 AM |
XPS AND AES STUDY FOR Au/a-Si:H INTERFACE |
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| ZHONG ZHAN-TIAN,WANG DA-WEN,LIAO XIAN-BO,FAN YUE,LI CHENG-FANG and MOU SHAN-MING.XPS AND AES STUDY FOR Au/a-Si:H INTERFACE[J].Acta Physica Sinica,1991,40(2):275-280. |
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| Authors: | ZHONG ZHAN-TIAN WANG DA-WEN LIAO XIAN-BO FAN YUE LI CHENG-FANG and MOU SHAN-MING |
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| Abstract: | The Au/a-Si:H contact has been investigated by XPS and AES. It is found that the metal cluster occurs, at initial formation process of Au/a-Si:H interface, and after exceeding the critical Au deposition value, the Vinterdiffusion and chemical reaction of Au and Si begin and Au-Si intermixing region is formed. Furthermore, the experimental results of photoemission study confirm that Si islands are formed after annealing the interface of Au/a-Si:H. |
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