High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

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High packing density laser diode stack arrays using Al-free active region laser bars with a broad waveguide and discrete copper microchannel-cooled heatsinks

A high packing density laser diode stack array is developed utilizing Al-free active region laser bars with a broad waveguide and discrete copper microchannel-cooled heatsinks. The microchannel cooling technology leads to a 10-bar laser diode stack array having the thermal resistance of 0.199 ℃/W, and enables the device to be operated under continuous-wave （CW） condition at an output power of 1200 W. The thickness of the discrete copper heatsink is only 1.5 mm, which results in a high packing density and a small bar pitch of 1.8 mm.     

Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes

Theoretical analysis for InGaP/AlGaInP laser diodes with different ridge waveguide structures is performed to investigate the lateral mode behavior using advanced device simulation. The internal physical mechanisms including temperature-induced changes in the refractive index profile, spatial hole burning effect, lateral carrier distribution, and gain profile variation with increasing input current are discussed by theoretical calculation to analyze the effects of different ridge structures on the lateral mode behavior of 660-nm AlGaInP laser diodes. The simulation results show that the use of narrow and shallow ridge geometry is the approach to obtaining single mode operation. Furthermore, it is found that the different values of the ridge height cause the lateral carrier distribution within the active region to be varied, which is also an important factor in determining the emergence of the first order lateral mode in addition to the geometry-dependent waveguide cutoff condition.     

High-average-power Nd:YAG planar waveguide laser that is face pumped by 10 laser diode bars

A planar waveguide Nd:YAG laser is pumped with 430 W of power from 10 laser diode bars to produce a multimode output power of 150 W at an optical efficiency of 35%. Use of a hybrid resonator of the positive-branch confocal unstable type for the lateral axis and of one of the near-case I waveguide type for the transverse axis increased the laser brightness by a factor of ~26 with only 12% less power than in the multimode case.     

Reliable high-efficiency high-brightness laser diode bars at 940 nm

High-quality InGaAs/AlGaAs laser diode bars emitting at 940 nm have been fabricated by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Two hundred and ten Watts maximum continuous-wave output power and a maximum power conversion efficiency of 60% at an output power of 72 W have been demonstrated for a single 1-cm-wide laser bar. These bars exhibit a very good beam quality of 5.7°×27.2° (full-width at half-maximum). Reliability test have been carried out for over 2000 h at 58 W at room temperature. Under these conditions, the extrapolated lifetime is 100,000 h, which suggests that AlGaAs-based lasers of proper designs could have similar long-term reliability as their Al-free counterpart.     

New self-align method for fabrication of 980 nm ridge waveguide laser diodes

A novel self-align method has been developed for the fabrication of 980 nm ridge waveguide laser diodes. It utilizes the facts that (1) the thickness of photoresist on the ridge top is substantially less than that in its vicinity and (2) their respective exposure times differ accordingly. Except for replacing the second photolithographic step with a simple flood-exposure, the fabrication procedure is identical to that for conventional ridge waveguide laser diodes. No additional materials or processing steps are required. As a result, the laser fabrication is significantly simplified with excellent reproducibility.     

850nm高亮度锥形半导体激光器的光电特性

采用激射波长为850 rm的AlGaInAs/AlGaAs梯度折射率波导分别限制增益量子阱结构的外延片,设计并制备了具有条形结构和锥形结构的半导体激光器.在输出功率同为1 W时,锥形激光器的发散角、光束传播因子和亮度分别为4°、2.8和9.9 MW·cm-2·sr-1,远好于条形激光器的6°、9.2和3.0 MW·cm...     

气源MBE外延自组装GeSi量子点光致荧光研究

利用气源分子束外延设备（MBE）制作了GeSi自组装量子点样品。利用原子力显微镜（AFM）和光致荧光（PL）光谱研究了量子点的形貌和光学性质。气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度。200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17meV。升温至200K,载流子的输运过程发生变化。对量子点PL积分强度与温度关系曲线进行拟合得到量子点中空穴跃迁至浸润层的热激活能为129meV。     

808 nm大功率半导体激光器阵列的优化设计

 采用激射波长为808 nm的GaAs/AlGaAs梯度折射率波导分别限制单量子阱结构外延片,制备了沟道深度不同的半导体激光器阵列,并对载流子分布进行理论分析和模拟。理论和实验结果表明：引入脊形台面和隔离沟道后,激光器阵列的输出功率、电光转换效率、斜率效率和光谱特性均有显著提高。随着沟道的加深,对电流侧向扩散的限制作用增强,从而提高了阵列性能。     

Asymmetric multiple-quantum-well laser diodes with wide and flat gain

Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm.     

Design and optimization of frequency tunable semiconductor laser used in resonator integrated optic gyro

Frequency tunable semiconductor laser has potential applications in resonator integrated optic gyro (RIOG) for its small size and easy to be integrated. An alternative construction of frequency tunable semiconductor laser with planar waveguide external cavity is proposed in this paper. The frequency tuning section, which is placed between the active section and Bragg grating section, is designed to be one part of the waveguide external cavity. The slab etched grating, based on the silicon-on-isolator ridge waveguide, is adopted to narrow the width of reflectivity spectrum. After the theoretical analysis and simulations, the frequency modulation coefficient of 2.1 MHz/mA is obtained, and the power change is less than 3.6 × 10⁻⁴ dB/1.6 GHz. The proposed configuration combines the advantages of wavelength tunable laser and external cavity laser, and it can realize precision frequency tuning, ignored power fluctuation and narrow linewidth, which contribute much to RIOG.     

A tunnel regenerated coupled multi-active-region large optical cavity laser with a high quality beam

A novel coupled multi-active-region large optical cavity structure cascaded by a tunnel junction is proposed to solve the problems of facet catastrophic optical damage (COD) and the large vertical divergence caused by the thin emitting area in conventional laser diodes. For a laser with three active regions, a slope efficiency as high as 1.49 W/A, a vertical divergence angle of 17.4 , and a threshold current density of 271 A/cm 2 are achieved. By optimizing the structural parameters, the beam quality is greatly improved, and the level of the COD power increases by more than two times compared with that of the conventional laser.     

980nm半导体激光器腔面膜钝化新技术

研究了不同腔面钝化方法对980 nm渐变折射率波导结构InGaAs/AlGaAs半导体激光器输出激光功率的影响.将980 nm半导体激光器管芯前后腔面不蒸镀钝化膜与蒸镀Si钝化膜和蒸镀ZnSe钝化膜的方法进行了对比.结果表明,蒸镀ZnSe钝化膜比蒸镀Si钝化膜的半导体激光器输出光功率提高了11％,比不蒸镀钝化膜的半导体...     

Transverse mode coupling in narrow-ridge waveguide laser diodes

The letter presents numerical data and gives an explanation for the spontaneous creation of spatial patterns in narrow-ridge waveguide laser diodes by including the effect of diffraction and non-linear coupling between transverse modes and the active material. In addition, experimental measurements from several laser diodes are made and directly compared to the simulation. Excellent agreement between numerical and experimental data is found.     

高性能9xx nm大功率半导体激光器（英文）

为了改善9xx nm高功率半导体激光器的性能,对n包层和p包层的掺杂分布进行了调整,以减小激光器的内部损耗。同时为了减小有源区载流子的泄漏,在有源区和波导层之间引入了高能量带隙GaAsP。设计并制作了内部损耗为1.25 cm-1的高功率激光器。器件可靠性工作的最大输出功率为26.5 W。当输出功率为10.5 W时,最大电光功率转换效率为72.4%,斜率效率为1.16 W/A。     

Wide tuning characteristics of double-ring coupled lasers

The wide tuning characteristics of double-ring coupled lasers with/without an extended waveguide are analyzed and optimized using the scattering matrix formalism. To obtain the optimum design schemes of the tunable laser diodes, the cross coupling ratios of two rings, the tuning enhancement factor, the propagation loss of passive waveguides, the optical gain of an active region, and the back and front-facet reflectivity of the waveguide are taken into account. When the coupling ratio of the ring and input/output waveguides is fixed, the extinction ratio and the linewidth are decreased as the tuning enhancement factor is increased, while the tuning range is increased.     

Properties of (InGa)As/GaAs QW (λ ≈ 1.2 µm) facet-coated edge emitting diode laser

In this paper, we report on the design and optical properties of laser diodes with an emission wave-length of ～1170 nm based on an (InGa)As/GaAs double quantum well active layer. The back and front facet of the laser diodes were coated with SiO_x dielectric films that influence the output optical power by enhancing or lowering the facet reflectivity. The measurements show improvement of the facet-coated laser diode properties in the threshold-current-density reduction along with light output power enhancement. Furthermore, a narrow far field pattern and high side mode suppression have been observed.     

High power AlGaInP laser diodes with zinc-diffused window mirror structure

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/A1GaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.     

A Novel Kind of Transverse Micro-Stack High-Power Diode Bars

Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large optical cavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60 W under 50 A driving current and the slope efficiency reaches 1.55 W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transverse strongly coupled devices.     

用反向渐变波导提高远红外自由电子激光器效率

在高效率和低电流小信号范围内,理论地分析了用反向渐变波导提高远红外波导自由电子激光器(FIR-FEL)效率的机理.并用单粒子模型进行了一维数值模拟,得到了令人鼓舞的结果.