| High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide |
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| 作者姓名： | FANG Gaozhan XIAO Jianwei MA Xiaoyu XU Zuntu ZHANG Jinming TAN Manqing LIU Zongshun LIU Suping FENG Xiaoming |
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| 作者单位： | Institute of Semiconductors，The Chinese Academy of Sciences，National Engineering Research Center for Optoelectronics Devices，Beijing |
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| 摘 要： | 1 Ｉｎｔｒｏｄｕｃｔｉｏｎ Ｈｉｇｈ ｐｏｗｅｒｌａｓｅｒｄｉｏｄｅｓｃｏｖｅｒｉｎｇｔｈｅｗａｖｅｌｅｎｇｔｈｒａｎｇｅｆｒｏｍ 91 0ｎｍｔｏ 940ｎｍａｒｅｗｉｄｅｌｙｕｓｅｄｆｏｒｐｕｍｐｉｎｇＹｂ∶ＹＡＧｓｏｌｉｄ ｓｔａｔｅｌａｓｅｒｓ,ｐｕｍｐｉｎｇｙｔｔｅｒｂｉｕｍ ｅｒｂｉｕｍｄｏｐｅｄｆｉｂｅｒａｍｐｌｉｆｅｒ (ＹＥＤＦＡ ) ,ｓｏｌｄｅｒｉｎｇ ,ｍａｔｅｒｉａｌｐｒｏｃｅｓｓｉｎｇ,ａｎｄｍｅｄｉｃａｌｔｈｅｒａｐｙ .Ｉｎｏｒｄｅｒｔｏａｃｈｉｅｖｅｈｉｇｈｅｒｐｏｗｅｒ,ｈｉｇｈｒ…
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| 收稿时间： | 2001/2/13 |
High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide |
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| FANG Gaozhan,XIAO Jianwei,MA Xiaoyu,XU Zuntu,ZHANG Jinming,TAN Manqing,LIU Zongshun,LIU Suping,FENG Xiaoming.High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide[J].中国激光(英文版),2002,11(1):9-13. |
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| Authors: | FANG Gaozhan XIAO Jianwei MA Xiaoyu XU Zuntu ZHANG Jinming TAN Manqing LIU Zongshun LIU Suping FENG Xiaoming |
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| Abstract: | The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 μm broad-area laser diodes has been measured, and is 2.5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1.7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19% fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates. |
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| Keywords: | laser diode bar waveguide Al-free |
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