A Novel Kind of Transverse Micro-Stack High-Power Diode Bars |
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Authors: | ZHANG Lei CUI Bi-Feng LI Jian-Jun GUO Wei-Lling WANG Zhi-Qun SHEN Guang-Di |
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Institution: | Opto-Electronic Technology Laboratory, Beijing University of Technology, Beijing 100022Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094 |
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Abstract: | Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large opticalcavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60W under 50A driving current and the slope efficiency reaches 1.55W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transversestrongly coupled devices. |
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Keywords: | 42 55 42" target="_blank">Px')">42 55 Px 71 55 Eq 85" target="_blank">')"> 85 60 Bt |
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