共查询到20条相似文献,搜索用时 62 毫秒
1.
FANG Gaozhan XIAO Jianwei MA Xiaoyu Xu Zuntu ZHANG Jinming Tan Manqing LIU Zongshun LIU Suping FENG Xiaoming 《中国光学快报(英文版)》2002,11(1)
The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 μm broad-area laser diodes has been measured, and is 2.5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1.7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19% fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates. 相似文献
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A high packing density laser diode stack array is developed utilizing Al-free active region laser bars with a broad waveguide and discrete copper microchannel-cooled heatsinks. The microchannel cooling technology leads to a 10-bar laser diode stack array having the thermal resistance of 0.199 ℃/W, and enables the device to be operated under continuous-wave (CW) condition at an output power of 1200 W. The thickness of the discrete copper heatsink is only 1.5 mm, which results in a high packing density and a small bar pitch of 1.8 mm. 相似文献
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Jun-Rong Chen Yung-Chi Wu Tien-Chang Lu Hao-Chung Kuo Yen-Kuang Kuo Shing-Chung Wang 《Optical Review》2009,16(3):375-382
Theoretical analysis for InGaP/AlGaInP laser diodes with different ridge waveguide structures is performed to investigate
the lateral mode behavior using advanced device simulation. The internal physical mechanisms including temperature-induced
changes in the refractive index profile, spatial hole burning effect, lateral carrier distribution, and gain profile variation
with increasing input current are discussed by theoretical calculation to analyze the effects of different ridge structures
on the lateral mode behavior of 660-nm AlGaInP laser diodes. The simulation results show that the use of narrow and shallow
ridge geometry is the approach to obtaining single mode operation. Furthermore, it is found that the different values of the
ridge height cause the lateral carrier distribution within the active region to be varied, which is also an important factor
in determining the emergence of the first order lateral mode in addition to the geometry-dependent waveguide cutoff condition. 相似文献
4.
High-average-power Nd:YAG planar waveguide laser that is face pumped by 10 laser diode bars 总被引:2,自引:0,他引:2
A planar waveguide Nd:YAG laser is pumped with 430 W of power from 10 laser diode bars to produce a multimode output power of 150 W at an optical efficiency of 35%. Use of a hybrid resonator of the positive-branch confocal unstable type for the lateral axis and of one of the near-case I waveguide type for the transverse axis increased the laser brightness by a factor of ~26 with only 12% less power than in the multimode case. 相似文献
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Hanxuan Li Tom Truchan Dennis Brown Ray Pryor Rajiv Pandey Frank Reinhardt Jeff Mott George Treusch Steve Macomber 《Optics & Laser Technology》2004,36(4):327-329
High-quality InGaAs/AlGaAs laser diode bars emitting at 940 nm have been fabricated by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Two hundred and ten Watts maximum continuous-wave output power and a maximum power conversion efficiency of 60% at an output power of 72 W have been demonstrated for a single 1-cm-wide laser bar. These bars exhibit a very good beam quality of 5.7°×27.2° (full-width at half-maximum). Reliability test have been carried out for over 2000 h at 58 W at room temperature. Under these conditions, the extrapolated lifetime is 100,000 h, which suggests that AlGaAs-based lasers of proper designs could have similar long-term reliability as their Al-free counterpart. 相似文献
6.
S. K. Yang J. S. Yu S. H. Lee Y. T. Ko T. I. Kim 《Optical and Quantum Electronics》1995,27(5):447-451
A novel self-align method has been developed for the fabrication of 980 nm ridge waveguide laser diodes. It utilizes the facts that (1) the thickness of photoresist on the ridge top is substantially less than that in its vicinity and (2) their respective exposure times differ accordingly. Except for replacing the second photolithographic step with a simple flood-exposure, the fabrication procedure is identical to that for conventional ridge waveguide laser diodes. No additional materials or processing steps are required. As a result, the laser fabrication is significantly simplified with excellent reproducibility. 相似文献
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Frequency tunable semiconductor laser has potential applications in resonator integrated optic gyro (RIOG) for its small size and easy to be integrated. An alternative construction of frequency tunable semiconductor laser with planar waveguide external cavity is proposed in this paper. The frequency tuning section, which is placed between the active section and Bragg grating section, is designed to be one part of the waveguide external cavity. The slab etched grating, based on the silicon-on-isolator ridge waveguide, is adopted to narrow the width of reflectivity spectrum. After the theoretical analysis and simulations, the frequency modulation coefficient of 2.1 MHz/mA is obtained, and the power change is less than 3.6 × 10−4 dB/1.6 GHz. The proposed configuration combines the advantages of wavelength tunable laser and external cavity laser, and it can realize precision frequency tuning, ignored power fluctuation and narrow linewidth, which contribute much to RIOG. 相似文献
11.
Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm. 相似文献
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A tunnel regenerated coupled multi-active-region large optical cavity laser with a high quality beam 下载免费PDF全文
A novel coupled multi-active-region large optical cavity structure cascaded by a tunnel junction is proposed to solve the problems of facet catastrophic optical damage (COD) and the large vertical divergence caused by the thin emitting area in conventional laser diodes. For a laser with three active regions, a slope efficiency as high as 1.49 W/A, a vertical divergence angle of 17.4 , and a threshold current density of 271 A/cm 2 are achieved. By optimizing the structural parameters, the beam quality is greatly improved, and the level of the COD power increases by more than two times compared with that of the conventional laser. 相似文献
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Martin Achtenhagen 《Optics Communications》2006,266(1):172-174
The letter presents numerical data and gives an explanation for the spontaneous creation of spatial patterns in narrow-ridge waveguide laser diodes by including the effect of diffraction and non-linear coupling between transverse modes and the active material. In addition, experimental measurements from several laser diodes are made and directly compared to the simulation. Excellent agreement between numerical and experimental data is found. 相似文献
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The wide tuning characteristics of double-ring coupled lasers with/without an extended waveguide are analyzed and optimized using the scattering matrix formalism. To obtain the optimum design schemes of the tunable laser diodes, the cross coupling ratios of two rings, the tuning enhancement factor, the propagation loss of passive waveguides, the optical gain of an active region, and the back and front-facet reflectivity of the waveguide are taken into account. When the coupling ratio of the ring and input/output waveguides is fixed, the extinction ratio and the linewidth are decreased as the tuning enhancement factor is increased, while the tuning range is increased. 相似文献
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T. Gühne V. Gottschalch G. Leibiger H. Herrnberger J. Kovác J. Kovác Jr. R. Schmidt-Grund B. Rheinländer D. Pudis 《Laser Physics》2006,16(3):441-446
In this paper, we report on the design and optical properties of laser diodes with an emission wave-length of ~1170 nm based on an (InGa)As/GaAs double quantum well active layer. The back and front facet of the laser diodes were coated with SiOx dielectric films that influence the output optical power by enhancing or lowering the facet reflectivity. The measurements show improvement of the facet-coated laser diode properties in the threshold-current-density reduction along with light output power enhancement. Furthermore, a narrow far field pattern and high side mode suppression have been observed. 相似文献
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The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/A1GaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm. 相似文献
19.
Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large optical cavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60 W under 50 A driving current and the slope efficiency reaches 1.55 W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transverse strongly coupled devices. 相似文献