| 高性能9xx nm大功率半导体激光器（英文） |
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| 引用本文： | 袁庆贺,井红旗,仲莉,刘素平,马骁宇.高性能9xx nm大功率半导体激光器（英文）[J].发光学报,2020(2):194-198. |
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| 作者姓名： | 袁庆贺 井红旗 仲莉 刘素平 马骁宇 |
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| 作者单位： | 中国科学院半导体研究所光电子器件国家工程中心;中国科学院大学材料科学与光电技术学院 |
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| 基金项目： | 国家自然科学基金(41414010302)资助项目~~ |
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| 摘 要： | 为了改善9xx nm高功率半导体激光器的性能,对n包层和p包层的掺杂分布进行了调整,以减小激光器的内部损耗。同时为了减小有源区载流子的泄漏,在有源区和波导层之间引入了高能量带隙GaAsP。设计并制作了内部损耗为1.25 cm-1的高功率激光器。器件可靠性工作的最大输出功率为26.5 W。当输出功率为10.5 W时,最大电光功率转换效率为72.4%,斜率效率为1.16 W/A。
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| 关 键 词： | 激光二极管 内部损耗 自由载流子吸收 |
High Performance 9xx nm High Power Semiconductor Laser |
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| YUAN Qing-he,JING Hong-qi,ZHONG Li,LIU Su-ping,MA Xiao-yu.High Performance 9xx nm High Power Semiconductor Laser[J].Chinese Journal of Luminescence,2020(2):194-198. |
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| Authors: | YUAN Qing-he JING Hong-qi ZHONG Li LIU Su-ping MA Xiao-yu |
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| Institution: | (National Engineering Research Center for Optoelectronic devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China) |
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| Abstract: | To improve the performance of 9xx nm high power semiconductor lasers,the doping profile of n-cladding layer and p-cladding layer is adjusted to reduce the internal loss.A high energy band gap GaAsP was introduced between the active region and the waveguide layer to reduce the leakage of carriers in the active region.A broad area laser with internal loss of 1.25 cm-1 is designed and fabricated.The device with maximum output power of 26.5 W is obtained.The maximum electrical-optical power conversion efficiency is 72.4%,which is obtained when the output power is 10.5 W.The slope efficiency is 1.16 W/A. |
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| Keywords: | laser diode internal loss free carrier absorption |
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