Heusler合金Cu2VAl磁性及输运性质的研究

对Heusler合金Cu2VAl多晶甩带样品进行了磁性与输运性质方面的研究.实验发现Cu2VAl在温度T为210K附近发生铁磁-顺磁相变,为弱铁磁体.输运性质的测量表明在7.2K时电阻因局域杂质超导相变而发生突变,电子和声子之间的散射是主要的散射机理.居里温度Tc以下存在侧跃导致的反常霍尔效应,并且7K附近的相变导致霍尔电阻率发生异常.     

La0.67Sr0.08Na0.25MnO3的奇特输运性质及CMR效应

用固相反应法制备了La_0.67Sr_0.08Na_0.25MnO₃样品.通过磁化强度-温度(M-T)曲线、电阻率-温度(ρ-T)曲线以及ρ-T拟合曲线研究了样品的输运性质及庞磁电阻(colossal magnetoresistance，CMR)效应.结果表明，ρ-T曲线和磁电阻-温度(MR-T)曲线均出现双峰现象；高温峰是伴随顺磁-铁磁(PM-FM)相变出现绝缘体-金属(I-M)相变，低温峰是颗粒界面效应；两个绝缘相输运机理不同：较低温度下(248K<T<274K)，ρ(T)符合极化子的可变程跃迁模型，而在更高温区(330K<T<374K)，ρ(T)符合极化子近邻跃迁模型；两个类金属相输运机理也不同：在低温区(67K<T<186K)，满足ρ-T^2.5关系，输运机理是自旋波散射和电-磁子散射作用，而在高温区(292K<T<304K)，满足ρ-T²关系，输运机理是单磁子散射作用. 关键词： 庞磁电阻 金属-绝缘体转变 晶界效应 输运行为     

Heusler合金Co2TiSn的磁性与输运性能

通过对Heusler合金Co₂TiSn磁性和输运性能的实验研究，发现低场中Co_{2< /sub>TiSn呈现出亚铁磁性；电阻和霍尔电阻率在温度低于8K时均出现异常.同时分析了电输 运的散射机制，并对反常霍尔效应产生的机制进行了探讨. 关键词： Heusler合金 磁性 输运性能}     

La0.67Pb0.33MnO3的磁性及输运特性

利用固相反应烧结法制备了La067Pb033MnO3单相多晶样品.研究了其结构、磁性及输运特性.结果表明，样品呈菱面相晶体结构，空间群为R3C，居里温度TC(=353K)非常接近TMI(=360K).在居里温度附近，发生铁磁-顺磁转变，导电特性由金属特征向半导体特征过渡.磁电阻在居里点达到极大值.当H=16T时，磁电阻的极大值为145%；当H=08T时，磁电阻的极大值为9%.输运性质表明，TTMI时 关键词： 磁电阻 输运特性 磁极化子 钙钛石     

单层Cu2X的热电性质

具有低晶格热导率和高热电优值的二维(2D)材料可用于热电器件的制备.本文通过第一性原理和玻尔兹曼输运理论,系统地预测了单层Cu₂X (X=S, Se)的热电性质.研究发现单层Cu₂Se较Cu₂S在室温下具有更低的晶格热导率(1.93 W/(m·K)和3.25 W/(m·K)),这源于其更低的德拜温度和更强的非谐性.单层Cu₂X(X=S, Se)价带顶处的能带简并效应显著增大了其载流子有效质量,导致p型掺杂下具有高的塞贝克系数和低的电导率.在最优掺杂浓度下,单层Cu₂S (Cu₂Se) n型的功率因数16.5 mW/(m·K²)(25.9 mW/(m·K²))远高于其p型的功率因数1.1 mW/(m·K²)(6.6 mW/(m·K²)),且随着温度的提升这一优势将更加明显.温度为700 K时,单层Cu₂S和Cu₂Se在n型最优掺...     

双层钙钛矿锰氧化物Nd_(2-2x)Ca_(1+2x)Mn_2O_7(x=0.4,0.5)的磁相变特性

利用固相反应法制备了Nd2-2x Ca1+2x Mn2O7(x=0.0-0.9)多晶样品,通过FULLPROF程序对样品X射线衍射图谱进行了精修,样品的空间群为14/mmm.测量了样品x=0.4,0.5的磁性(5K相似文献   

MnFeP0.45As0.55材料中的相变研究

利用不同的测量方法，研究了MnFeP_１-xAs_x（0.32关键词： MnFePAs 磁致伸缩 巡游电子变磁性 一级磁相变     

哈斯勒合金Ni50Mn35In15的马氏体相变及其磁热效应

利用电弧炉熔炼了Ni₅₀Mn₃₅In₁₅多晶样品,根据磁性测量对其马氏体相变和磁热效应进行了系统研究.结果表明,随着温度的降低,样品在室温附近先后发生了二级磁相变与一级结构相变特征的马氏体相变,导致它的磁化强度产生突变. 同时通过低温下的磁滞回线的测量发现样品存在交换偏置行为,表明低温下马氏体相中铁磁和反铁磁共存. 此外,根据Maxwell方程,计算了样品在马氏体相变温度附近的磁熵变,当温度为309K,磁场改变5 T时,样品的磁熵变可达22.3J/kgK. 关键词： 哈斯勒合金 50Mn₃₅In₁₅')" href="#">Ni₅₀Mn₃₅In₁₅ 马氏体相变 磁热效应     

ZrCuSiAs型锰基化合物ThMnSbN中的化学压力效应

采用固相反应法合成了一种Zr Cu Si As型准二维层状锰基化合物Th Mn Sb N.基于X射线粉末衍射的结构精修显示,该化合物属于P4/nmm空间群.其晶胞参数为a=4.1731?, c=9.5160?.电输运测量显示,该化合物电阻率随温度下降缓慢上升,且在16 K附近出现电阻率异常.与此同时,该材料的磁化率在同一温度附近出现异常,显示出类似磁性相变的行为.进一步的比热测量中没有观察到磁相变导致的比热异常.另外,低温下的比热分析显示,该材料的电子比热系数为γ=19.7 m J·mol^–1·K^–2,远高于其他同类锰基化合物.该结果与电输运测量中观察到的低电阻率行为相符,暗示Th Mn Sb N中费米面附近存在可观的电子态密度.基于对一系列Zr Cu Si As型化合物晶体结构细节的比较,分析了含有萤石型Th₂N₂层的系列化合物中导电层所受化学压力的不同作用形式.     

Ti-50.8at%Ni马氏体相变中的电磁特性

研究Ti-50.8at%Ni合金在马氏体-奥氏体相变温度附近的电磁性质.由M-H曲线分析了传导电子的顺磁性以及少量局域电子引起的铁磁性.在M-T曲线中，降温曲线在180K附近有突降，升温曲线在230K附近有突升.在电阻率测量中，降温和升温的ρ-T曲线也有类似的突变.升温过程的质量热容c_p曲线在230K附近出现了由奥氏体相变引起的跳跃.这些实验结果表明，样品的马氏体相变温度约 关键词： TiNi合金 电磁性质 马氏体-奥氏体相变 质量热容     

Magnetic transitions in Cu2−xSe below room temperature

We have measured the magnetic susceptibility, resistivity, magnetoresistivity and Hall effect of nonstoichiometric cuprous selenide between 5 and 350 K. Our results show that below 170 K Cu_2−xSe is a mixture of diamagnetic Cu_1.995Se and paramagnetic Cu₃Se₂. The phase diagram of the Cu–Se system, in which 170 K represents the eutectic isotherm, governs the relative content of the two phases. For the Cu₃Se₂ phase a transition to an antiferromagnetic state is observed at about 50 K, with the corresponding Weiss temperature Θ=120 K. On heating above 170 K Cu_2−xSe becomes completely diamagnetic, but the transformation is slow and strongly time dependent. The complicated magnetic behaviour is ascribed to a broad temperature hysteresis of the process.     

正交和四方YBa2Cu3O7-x的热膨胀系数

用电容法测量了正交和四方YBa₂Cu₃O_7-x的热膨胀系数与温度的关系。结果表明,正交样品在205K附近,四方样品在92—130K之间热膨胀系数有异常。估计前者可能与晶格的不稳定性有关,说明具有较强的电-声子相互作用,后者可能与结构转变有关,因此破坏了高温超导电性。同时也发现正交样品在92K热膨胀系数有微小跳跃。由此估计了压力效应 关键词：     

Enhanced non-metallic behavior on the verge of magnetic instability in Fe2V1−xNbxAl Heusler alloys

Structural, magnetic and transport behavior of Nb substituted Fe₂VAl alloys have been investigated in the present work. From the detailed analysis of these data it is observed that Nb content promotes a lattice expansion in L2₁ super-structure of Fe₂VAl. Magnetization data suggest that un-doped Fe₂VAl exhibits cluster glass behavior with a bimodal distribution of superparamagnetic clusters at lower temperatures, developed possibly due to the cluster size distribution. However, in Nb-substituted alloys, cluster size reduces and cluster density increases, which further reduces coupling between the clusters, resulting in a state of increased magnetic disorder up to a plausible 20% substitution. Concurrently resistivity increases at lower temperatures and shows a deviation from semiconductor like transport, which can be explained in terms of increasing spin dependent scattering and decreasing inter cluster interaction due to iso-electronic-but-larger-sized Nb substitution at V site. Present experimental results corroborate well with the theoretical predictions made in the literature.     

Hall mobility in quasi one-dimensional conductors with charge density or spin density wave ground state

High mobilities found for free carriers below the phase transition in quasi one-dimensional crystals such as TTF-TCNQ and (TMTSF)₂PF₆ indicate that defect scattering is unimportant. We calculate the Hall mobility due to phonon scattering and find good agreement with the measured value of 10⁴cm²/Vsec for (TMTSF)₂PF₆ at 4K.     

Anisotropic transport properties of U4Cu4P7

The electrical resistivity of U₄Cu₄P₇ for the current flowing in the basal plane of this tetragonal antiferromagnetic compound has been measured from 2 to 1000 K. Contrary to the case where the current flows along thec axis, we find an increasing resistivity with increasing temperature over the whole temperature range. This ferromagnetic-like behavior in the basal plane and the antiferromagnetic-like behavior perpendicular to it, is explained with the complex magnetic structure of the compound. The Hall effect forB parallel to thec axis shows an antiferromagnetic-like temperature dependence. The ordinary part of the Hall effect in the paramagnetic phase gives in an one-band model a carrier concentration of 0.7 holes per uranium atom, which is quite unique in uranium compounds by its sign and which results from the presence of two kinds of uranium atoms with different bonding, valence, magnetic moment and exchange. Quantitative differences between various samples of U₄Cu₄P₇ are related to a mixed-layer stacking polytype of U₄Cu₄P₇ and UCuP₂ units.     

Magnetic Phase Transitions in Substituted Spinels of Zn1−x Cu χ Cr2 Se4; 0.0 ≤ x ≤ 0.3

Magnetic and crystallographic properties have been studied by neutron powder diffraction and measurements of magnetization and magnetization hysteresis-loops for substituted spinels of Zn_1?xCu_xCr₂Se₄ with 0.0≤x≤0.3. It is found that the Zn_0.85Cu_0.15Cr₂Se₄ spinel has two magnetic phase transitions at 23.0 K (Néel temperature; T _N) and 410 K (Curie temperature; T _C) and that the Zn_0.70Cu_0.30Cr₂Se₄ spinel has magnetic transitions at 24.5 K (T _N) and 415 K (T _C) on heating. The low-temperature magnetic phase transition is from a spiral antiferromagnet to a ferromagnet, and the high-temperature magnetic phase transition is from a ferromagnet to a paramagnet, while ZnCr₂Se₄ shows a magnetic phase transition only from a spiral antiferromagnet to a paramagnet at about 21.0 K. From neutron powder diffraction, it is also found that the spinels of Zn_1?x Cu _x Cr₂Se₄; 0.0 ≤ x ≤ 0.3. show satellite-like magnetic reflection having indexes (h ± Q, k, l) with Q = 0.470 below T _N and short-range order of spins (spin glass-like) above T _N. The incommensurate antiferromagnetic phase below T _N results from a spiral long-range order of the spins of Cr³⁺. The intermediate ferromagnetic phase between T _N and T _C is related not to the spiral spin order but to double-exchange magnetic interaction among Cr³⁺ and Cr⁴⁺ mediated by current carriers, positive holes, which is made by the substitution of Zn²⁺ ions with Cu¹⁺ ions in Zn_1?x Cu _x Cr₂Se₄.     

Coexisting holes and electrons in high-T C materials: implications from normal state transport

Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) dc transport data reported for eight bulk-crystal and six oriented-film specimens of YBa₂Cu₃O_7?δ, and (ii) far-infrared Hall angle data reported for YBa₂Cu₃O_7?δ and Bi₂Sr₂CaCu₂O_8+δ. The electron band exhibits extremely strong scattering; the extrapolated dc residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole–electron analysis of Hall angle data suggests that the electrons possess the greater effective mass.     

Electronic transport and specific heat of 1T-V Se2

The low-temperature thermoelectric power and the specific heat of 1T-V Se₂ (vanadium diselenide) have been reported along with the electrical resistivity and Hall coefficient of the compound. The charge density wave (CDW) transition is observed near 110 K in all these properties. The thermoelectric power has been measured from 15 K to 300 K, spanning the incommensurate and commensurate CDW regions. We observed a weak anomaly at the CDW transition for the first time in the specific heat of V Se₂. The linear temperature dependence of the resistivity and thermoelectric power at higher temperatures suggests a normal metallic behavior and electron–phonon scattering above the CDW transition. The positive thermoelectric power and negative Hall coefficient along with strongly temperature-dependent behavior in the CDW phase suggest a mixed conduction related to the strongly hybridized s–p–d bands in this compound.     

Studies of magnetic ordering in Cu2FeSnS4 by Mössbauer spectroscopy

Cu₂FeSnS₄, a tetragonal crystal of space group 142m, is found by magnetic measurements to undergo an antiferromagnetic transition at 7°K.     

The superconducting gap and an unidentified 110–190 K phase of YBa2Cu3O7 observed by far-infrared ellipsometry

We have measured the complex dielectric function of pure and Fe-doped YBa₂Cu₃O₇ ceramics, between 10 and 150 cm^–1 and 20 and 300 K, with a far-infrared, rotating-analyzer laser ellipsometer. The superconducting phase transition and the gap energy are clearly observable. The undoped ceramic exhibits remarkable dielectric hysteresis between 110 K and 190 K. This points to a still unidentified phase which we observe to be sensitive to a weak magnetic field.