| ZrCuSiAs型锰基化合物ThMnSbN中的化学压力效应 |
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| 引用本文： | 肖宇森,段清晨,李佰卓,柳绍华,祝钦清,谭树刚,景强,任之,梅玉雪,王操,曹光旱.ZrCuSiAs型锰基化合物ThMnSbN中的化学压力效应[J].物理学报,2022(4):192-200. |
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| 作者姓名： | 肖宇森 段清晨 李佰卓 柳绍华 祝钦清 谭树刚 景强 任之 梅玉雪 王操 曹光旱 |
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| 作者单位： | 山东理工大学物理与光电工程学院;浙江大学物理系;西湖大学理学院 |
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| 基金项目： | 国家重点研究发展计划(批准号:2017YFA0303002);山东省自然科学基金(批准号:ZR2019MA036,ZR2016AQ08)资助的课题。 |
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| 摘 要： | 采用固相反应法合成了一种Zr Cu Si As型准二维层状锰基化合物Th Mn Sb N.基于X射线粉末衍射的结构精修显示,该化合物属于P4/nmm空间群.其晶胞参数为a=4.1731?, c=9.5160?.电输运测量显示,该化合物电阻率随温度下降缓慢上升,且在16 K附近出现电阻率异常.与此同时,该材料的磁化率在同一温度附近出现异常,显示出类似磁性相变的行为.进一步的比热测量中没有观察到磁相变导致的比热异常.另外,低温下的比热分析显示,该材料的电子比热系数为γ=19.7 m J·mol–1·K–2,远高于其他同类锰基化合物.该结果与电输运测量中观察到的低电阻率行为相符,暗示Th Mn Sb N中费米面附近存在可观的电子态密度.基于对一系列Zr Cu Si As型化合物晶体结构细节的比较,分析了含有萤石型Th2N2层的系列化合物中导电层所受化学压力的不同作用形式.
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| 关 键 词： | 锰基化合物 晶体结构 物性测量 化学压力效应 |
Chemical pressure effects in ZrCuSiAs-type manganese-based compound ThMnSbN |
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| Xiao Yu-Sen,Duan Qing-Chen,Li Bai-Zhuo,Liu Shao-Hua,Zhu Qin-Qing,Tan Shu-Gang,Jing Qiang,Ren Zhi,Mei Yu-Xue,Wang Cao,Cao Guang-Han.Chemical pressure effects in ZrCuSiAs-type manganese-based compound ThMnSbN[J].Acta Physica Sinica,2022(4):192-200. |
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| Authors: | Xiao Yu-Sen Duan Qing-Chen Li Bai-Zhuo Liu Shao-Hua Zhu Qin-Qing Tan Shu-Gang Jing Qiang Ren Zhi Mei Yu-Xue Wang Cao Cao Guang-Han |
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| Affiliation: | (Shool of Physics and Optoelectronics,Shandong University of Technology,Zibo 255000,China;Department of Physics,Zhejiang University,Hangzhou 310027,China;School of Science,Westlake University,Hangzhou 310024,China) |
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| Abstract: | A quasi-two-dimensional manganese-based compound ThMnSbN is synthesized by the solid-state reaction method.Structural refinement based on X-ray powder diffraction shows that the compound structure belongs to the P4/nmm space group.The lattice parameters are a=4.1731?and c=9.5160?.Electrical transport measurements show that the resistivity of the compound is the lowest in the Mn-based family.When cooling it,its resistivity rises slowly and shows a shoulder-like anomaly at 16 K.Also,the magnetic susceptibility exhibits an anomaly at the very same temperature.Though the specific heat data indicate the inexistence of transition-induced anomaly,the electron specific heat coefficient ofγ=19.7 mJ·mol-1·K-2 is derived by fitting the low-temperature C-T curve.Thisγvalue is much higher than those of the isostructural manganese-based compounds.Thus,the specific heat is consistent with the low resistivity,implying a considerable electronic density of states near the Fermi surface for ThMnSbN.By comparing the crystal structure for a group of ZrCuSiAs-type compounds,various chemical pressure effects of the fluorite-type Th2N2 layer on the conducting layer in different compounds are discussed. |
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| Keywords: | Mn-based compounds crystal structure physical property measurement chemical pressure effects |
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