Sr0.61Ba0.39Nb2O6薄膜的电光特性

用激光脉冲沉积(PLD)法在MgO(001)衬底上成功地生长、制备出了外延Sr_0.61Ba_0.39Nb₂O₆(SBN61)电光薄膜;通过SBN61电光薄膜椭偏光谱测量的分析研究,得到了SBN61电光薄膜的光学常数;通过电致双折射方法对生长在(001)MgO衬底上的SBN61薄膜的电光性能进行了测量研究,发现SBN61电光薄膜电致双折射的变化Δn与所加电场E成平方关系,其二次电光系数R=0.21×10^-16(m/V)²。     

铁电-顺电扩散相转变的实验和统计模型

制备了扩散相转变铁电陶瓷系列(Ba_1-xLa_x)(Ti_1-yZr_y)O₃和扩散-非扩散相变铁电单晶系列K_0.2Na_0.2(Sr_pBa_1-p)_0.8Nb₂O₆。陶瓷采用一般铁电陶瓷制备工艺,单晶采用提拉法生长。测量了所有样品在-50—100℃范围内 关键词：     

铁电单晶(KxNa1-x)0.4(SryBa1-y)0.8Nb2O6的光学性质和线性电光效应

本文介绍铁电单晶(K_xNa_1-x)_0.4(Sr_yBa_1-y)_0.8Nb₂O₆的光学性质和线性电光效应的测量。实验结果表明,这种晶体具有较大的光学双折射,透光范围由4000?到5.6μm。晶体具有低的线性电光调制的半波电压,其电光调制价值指数n₀³·γ_c高达730×10 关键词：     

铌酸锶钡钠系统X射线衍射数据的测定

用衍射仪和Guinier聚焦照相机收集了铌酸锶钡钠系统一系列化合物的X射线粉末衍射图谱(CuK_α辐射)。给出了Ba₂NaNb₅O₁₅,SrBaNaNb₅O₁₅和Sr_2.05Na_0.90Nb₅O₁₅详细指标化了的粉末衍射数据,可代替原有的JCPDSX射线粉末衍射标准数据卡(卡片号为23-654,27-1408,27-1409和27-787)的数据。 关键词：     

铁电SBN薄膜电光系数的测量及其在波导中的应用

利用溶胶-凝胶法在MgO(001)衬底上获得C轴择优取向的铁电铌酸锶钡(SBN)薄膜,主要介绍MgO(001)衬底上SBN60薄膜及掺入的K离子与Nb离子摩尔比例为1：3的SBN60薄膜横向电光系数r51的测量,实验测得不掺K的SBN60薄膜r51值为37．6pm／V,掺K的r51值为58．5pm／V。并由此设计一种基于MgO(001)衬底上的马赫一曾德尔型SBN60薄膜波导调制器,计算出在633nm时,掺K比例为1：3的此种波导调制器半波调制电压值为10V,不掺K的半波电压值为16V,结果说明掺入K离子能增加薄膜的横向电光系数并有效的减少波导的半波调制电压。     

铁电钨青铜型晶体SBN和KNSBN的Raman谱研究

测得了Sr_1-xBa_xNb₂O₆(SBN)和(K_1-yNa_y)_z(Sr_1-xBa_x)_l-zNb₂O₆(KNSBN)晶体的Raman谱,并用群论和晶格动力学观点进行了讨论.为其掺杂改性提供了科学依据. 关键词：     

光折变晶体Ce:BaTiO3电光和压电系数的测量

用干涉仪的方法测量了Ce:BaTiO₃晶体的低频电光系数和压电系数．排除压电效应对光通过晶体引起相位的变化，得到低频下经极化的Ce:BaTiO₃单晶的电光系数r₄₂=1945±220pm/V和r₁₃=11.8±1pm/V．从而，为研究Ce:BaTiO₃晶体的光折变效应和理论计算提供了精确的线性电光系数 关键词：     

铁电晶体(K0.20Na0.20Sr0.60Ba0.20)Nb2O6全部电弹常数的测定

本文讨论了由作者首次人工合成的新的钨青铜结构铁电单晶(K_0.20Na_0.20Sr_0.60Ba_0.20)Nb₂O₆全部电弹常数的测量方法和测量程序。第一次发表了该晶体的全部电弹常数及电-机耦合系数等共53个数据。绝大多数的数据是按IRE标准进行测量的。采用了(zxl)45°切片的厚度切变振动模式和(xzt)45°棒的长度扩张模式来测定弹性系数s₆₆^D和s₁₃^D。对实验过程引起的测量误差进行了讨论。 关键词：     

Sr0.6Ba0.2Ca0.2Al2O4 ∶Eu,Dy的制备与长余辉发光性能研究

采用高温固相法制备了Ca,Ba共掺的Sr_0.6Ba_0.2Ca_0.2Al₂O₄ ∶Eu²⁺_0.01, Dy³⁺_0.02和单掺Ba的Sr_0.6Ba_0.4Al₂O₄ ∶Eu²⁺_0.01, 关键词： 长余辉 铝酸锶 稀土掺杂 陷阱能级     

铌酸锶钠锂单晶电光、热电、介电和压电性能

文本研究了用提拉法生长的铌酸锶钠锂(Sr₄NaLiNb₁₀O₃₀)晶体的电光、热电、介电和压电性能。其半波电压与温度的关系与晶体中锂含量密切相关。测得其室温下的热电系数与Ba～0.5的Sr_1-xBa_xNb₂O₆晶体相当,～7×10^-8C/cm²·K。已极化的晶体几乎检测不到退极化现象。将其作成热电器件,其探测度D^*不小于1.7×10⁷Hz^1/2·cm/W。文中还描述了其介电和某些压电性能。 关键词：     

热释电效应对光折变全息光栅读出的影响

先用两束０.２７ｍＷ的６３２.８ｎｍＨｅ-Ｎｅ激光在掺Ｍｎ的ＫＮＳＢＮ晶体中记录光折变全息光栅，再用波长为６２１.８ｎｍ的准连续染料激光读出，观察到衍射光信号有一个从初始最大值衰减到稳定最小值的暂态过程．初始值对稳定值的比可达７.５以上．这一现象可用热释电效应的影响进行解释 关键词：     

Electro-optic properties of epitaxial Sr<Subscript>0.6</Subscript>Ba<Subscript>0.4</Subscript>Nb<Subscript>2</Subscript>O<Subscript>6</Subscript> films grown on MgO substrates using Li<Subscript>x</Subscript>Ni<Subscript>2-x</Subscript>O buffer layer

Textured Li_xNi_2-xO (LNO) thin films have been fabricated on (001)MgO substrates by pulsed laser deposition technique. The as-deposited LNO films shows a conductivity of 2.5×10^-3 Ω m and possess a transmittance of about 35% in the visible region. Subsequent deposition of Sr_0.6Ba_0.4Nb₂O₆ (SBN60) thin film on these LNO-coated MgO substrates resulted in a textured SBN layer with a 〈001〉 orientation perpendicular to the substrate plane. Phi scans on the (221) plane of the SBN layer indicated that the films have two in-plane orientations with respect to the substrate. The SBN unit cells were rotated in the plane of the film by ± 8.2° as well as ± 45° with respect to the LNO/MgO substrate. Besides the highly (00l)-orientation, the SBN films also exhibited a dense microstructure as shown by scanning electron microscopy. The electro-optic coefficient (r₃₃) of the SBN film was measured to be 186 pm/V. On the basis of our results, we have demonstrated that the LNO film can be used as a buffer layer as well as a transparent bottom electrode for waveguide applications. The SBN/LNO heterostructure is also a suitable candidate for integrated electro-optics devices. PACS  42.79.Gn; 42.82.Et; 78.20.Ci     

Nb(Ba)加强Bi系中2223相生成作用研究

固相法合成系列名义组成为Bi_2-xNb_xSr₂Ca₂Cu₃O_y(x=0—1.0)的样品,电学和磁学测量表明,当掺入x=0.2—0.3的Nb有明显加强2223相生成的作用,配比为Bi_1.7Nb_0.3Sr₂Ca₂Cu₃O_y时最佳;当掺Ba以部分取代Sr后有明显协同Nb促进2223相生成的作用,比单掺Nb效果更为显著,其中以Bi_1.7Nb_0.3Sr_1.8Ba_0.2Ca₂Cu₃O_y为最优组成。热重分析(TGA)实验显示,掺Nb(Ba)后样品在～600°C出现吸氧增重;XPS中的O_1s峰显示掺Nb(Ba)后除～531eV的主峰外,在～529eV的肩峰更加明显;讨论了Nb(Ba)对晶体结构的可能影响。 关键词：     

SBN thin films growth by RF plasma beam assisted pulsed laser deposition

SBN thin films were grown on MgO and Silicon substrates by PLD and RF-PLD (radiofrequency assisted PLD) starting from single crystal Sr_0.6Ba_0.4Nb₂O₆ and ceramic Sr_0.5Ba_0.5Nb₂O₆ stoichiometric targets. Morphological and structural analyses were performed on the SBN layers by AFM and XRD and optical properties were measured by spectroellipsometry. The films composition was determined by Rutherford Backscattering Spectrometry. The best set of experimental conditions for obtaining crystalline, c-axis preferential texture and with dominant 31° in-plane orientation relative to the MgO (100) axis is identified.     

The Field Effect in a Metal–Ferroelectric–Semiconductor System of Multilayer Ferroelectric Films with Various Structure Types

The ability to grow the interfacial defect-poor Sr_0.5Ba_0.5Nb₂O₆ + Ba_0.2Sr_0.8TiO₃ and Ba_0.8Sr_0.2TiO₃ + Ba_0.4Sr_0.6TiO₃ ferroelectric films onto the doped silicon substrates is discussed. A study of piezo-response via the quasi-static method (using the electrode area of 0.07 mm²) reveals that heterostructures possess an initial polarized ferroelectric state with a spontaneous polarization vector perpendicular to the substrate at any type of Si conductivity. The polarized state is established to refer to two-dimension stresses in the ferroelectric, which is tunable through a preprepared Ba_xSr_{1 – x}TiO₃ onto a sublayer substrate as well as to a thickness of this sublayer. Polarization switching in Sr_0.5Ba_0.5Nb₂O₆/Si and Ba_0.8Sr_0.2TiO₃/Si heterostructures under the external field arises at only using the barium–strontium titanate sublayer predeposited onto silicon. A 15% decrease in switching polarization in Ba_0.8Sr_0.2TiO₃/Ba_0.4Sr_0.6TiO₃/Si structures is observed after 500 h.     

Ferroelectric-relaxor behavior of (Na0.5K0.5)NbO3-based ceramics

We report that ferroelectric-relaxor behavior is induced by doping of SrO and TiO₂, or BaO and TiO₂ into classic ferroelectric (Na_0.5K_0.5)NbO₃. It is found that [(Na_0.5K_0.5)_0.9Sr_0.1](Nb_0.9Ti_0.1)O₃ ceramics exhibit a pronounced ferroelectric-relaxor behavior, comparable to that of [(Na_0.5K_0.5)_0.9Ba_0.1](Nb_0.9Ti_0.1)O₃ ceramics. Our results indicate that the relaxor behavior is closely related to the appearance of micropolar regions in these systems. The relaxor behavior should arise from the dynamic response of micropolar clusters. Raman spectra of [(Na_0.5K_0.5)_1−xSr_x](Nb_1−xTi_x)O₃ ceramics measured in the wavenumber range from 100 to 1200 cm⁻¹ confirm that the first order scattering is dominant in phonon bands should result from both short-range ordered region (micropolar regions) and disordered matrix. The frequency dependence of dielectric permittivity measurements show that the relaxor behavior of SrO and TiO₂, or BaO and TiO₂ doped (Na_0.5K_0.5)NbO₃ ceramics is not a Debye type in the radio frequency range.     

Crystal structure and photoluminescence of (Ba1−x−ySryEux)9Sc2Si6O24

Divalent europium-doped alkaline earth metal silicate phosphors, (Ba_1?x?ySr_yEu_x)₉Sc₂Si₆O₂₄ (x=0.005–0.1, y=0–0.95), have been successfully prepared by solid-state reaction at 1350 °C. The analysis of X-ray diffraction shows that the compounds are in a single phase at the proper concentration of Sr²⁺. At room temperature, the Eu²⁺-activated Ba₉Sc₂Si₆O₂₄ phosphor exhibits a single emission band peaking at about 506 nm. With the increasing content of Sr²⁺, the luminescent intensity of (Ba_1?x?ySr_yEu_x)₉Sc₂Si₆O₂₄ weakens, and the emission peak shifts towards red. Luminescence concentration quenching occurs when Eu²⁺ content x is more than 1 mol% in (Ba_1?x?ySr_yEu_x)₉Sc₂Si₆O₂₄ (y=0/0.2). At low temperatures (Ba_0.9?ySr_yEu_0.1)₉Sc₂Si₆O₂₄ (y=0/0.2) phosphors have two emission bands corresponding to different Eu²⁺ crystallographic sites. The high energy peak (P₁) is quenched at room temperature, while the low energy peak (P₂) weakens much more slowly owing to the energy transfer from P₁ to P₂.     

Light-induced charge transport processes in photorefractive crystals II: Materials

3 , LiTaO₃, BaTiO₃, Ba_1-xSr_xTiO₃ (, BST), Ba_1-xCa_xTiO₃ (, BCT), KNbO₃, KTa_1-xNb_xO₃ (, KTN), Sr_1-xBa_xNb₂O₆ (, SBN) and Bi₁₂(Si,Ti,Ge)O₂₀ (BSO, BTO, BGO) are discussed. Utilizing the knowledge on the charge transport processes, consequences for applications are deduced; improved techniques for nondestructive readout of holograms with light of the recording wavelength are described. Received: 14. October 1996