激光光刻中的超分辨现象研究

激光光刻是加工微光学及二元光学掩模的主要手段。光刻的最细线宽对所加工的二元微器件性能起决定作用。本文导出了会聚的高斯光束用于激光光刻时在光刻胶内的光场近似上此可判断出能光刻线条的分辨力。若入射高斯光束受到振中相位调制时,胶层内的光强分布将发生变化,从而影响曝光线条的线宽和质量。计算看出：当入射光中心环受到遮拦时,可以得到超光刻物镜极限分辨的线条宽度（０．６μｍ）,但此时对曝光能量控制要求很高。在激     

离焦激光直写的线宽稳定方法

为了提高激光直写加工衍射光学元件时的线条质量,提出一种离焦激光直写的线宽稳定方法.该方法通过同时调节激光功率和离焦量,使光刻胶的曝光阈值处于线宽对曝光量的变化率较小位置,从而可以弱化线宽对实际曝光量或光刻胶阈值等变化的敏感度,提高利用离焦方法进行衍射光学元件制作时的线宽稳定性.推导了稳定线宽后的光功率控制模型和线宽模型,模型中的变量仅为离焦量,降低了光功率控制的复杂性.利用632.8 nm的He-Ne激光和NA-0.1的物镜在CCD上对采用该方法后的离焦线宽模型进行验证,实验结果与理论模型吻合较好.该方法对于线宽稳定度较高的衍射光学元件制作具有重要价值.     

大面积金纳米线光栅的制备

利用激光干涉光刻和金纳米颗粒胶体溶液制备了宽度在100 nm以下且总面积达到平方厘米量级的金纳米线光栅结构.制备过程中,首先在表面镀有厚度约为200 nm的铟锡氧化物薄膜的面积为1 cm×1 cm的玻璃基片表面旋涂光刻胶,然后利用紫外激光干涉光刻制备光刻胶纳米光栅结构.有效控制干涉光刻过程中的曝光量、显影时间,获得小占...     

软X射线投影光刻技术

软 X射线投影光刻作为特征线宽小于 0 .1μm的集成电路制造技术 ,倍受日美两个集成电路制造设备生产大国重视。随着用于软 X射线投影光刻的无污染激光等离子体光源、高分辨率大视场投影光学系统、无应力光学装调工艺、深亚纳米级镜面加工和多层膜制备、低缺陷反射式掩模、表面成像光刻胶。     

数字灰度光刻成像物镜设计

为了研究数字灰度光刻成像系统中栅格效应对像质的影响.在成像系统优化参量已有的研究基础上,综合考虑工作效率、光刻准确度、加工制造成本等因素,设计了一种能够有效消除数字灰度光刻成像栅格效应的光刻物镜.此光刻物镜技术指标为,数值孔径NA＝0.3,工作波长λ＝442 nm,倍率10×,分辨率R≤1.2 μm,焦深4 μm,且镜片数量少,光学加工、光学校装公差要求低.结果表明,该镜头完全满足数字灰度光刻高质量成像的需要.     

用紫外准分子激光器进行接触式光刻的初步研究

本文叙述采用输出波长为308nm的XeCl准分子激光器进行微米级接触式光刻实验.获得1.5μm的分辨线条,而2.25μm线条已符合集成电路光刻要求.     

提高微细图形光刻分辨力的相移滤波技术研究

详细研究了提高投影成像光刻分辨力的相移滤波技术的基本理论,给出了理论模型,进行了模拟计算.对不同掩模图形设计制作的不同优化滤波器进行光刻对比实验并取得实验结果.研究表明,相移滤波能显著提高部分相干成像系统光刻分辨力和增大焦深,同时能提高光能利用率,有利于提高光刻生产率,是一种有效提高光刻分辨力和焦深的波前工程技术.     

大面积金纳米线光栅的制备

利用激光干涉光刻和金纳米颗粒胶体溶液制备了宽度在100 nm以下且总面积达到平方厘米量级的金纳米线光栅结构.制备过程中,首先在表面镀有厚度约为200 nm的铟锡氧化物薄膜的面积为1 cm×1 cm的玻璃基片表面旋涂光刻胶,然后利用紫外激光干涉光刻制备光刻胶纳米光栅结构.有效控制干涉光刻过程中的曝光量、显影时间,获得小占空比的光刻胶光栅.再以光刻胶纳米光栅作为模板,旋涂金纳米颗粒胶体溶液.充分利用金纳米颗粒胶体溶液在光刻胶表面浸润性差的特点,限制旋涂后留存在光刻胶光栅槽中金纳米颗粒的数量,从而达到限制金纳米线宽度的目的.最后在250℃将样品进行退火处理5 min.获得了周期为400 nm且占空比小于1:4的金纳米线光栅结构,其有效面积为1 cm².以波导共振模式与粒子等离子共振模式间耦合作用为特征的光谱学响应特性验证了波导耦合金属光子晶体的成功制备,为小传感体积新型生物传感器的开发提供了性能良好的金属光子晶体芯片.     

高数值孔径光学光刻成像中的体效应

为有效控制成像线宽,研究了高数值孔径光学光刻中的体效应并提出一种光刻胶膜层优化方法,利用成像中的摇摆效应平衡体效应对成像线宽的影响.首先根据系统数值孔径和照明相干因子确定成像光入射角分布,相对所有入射光求出光刻胶底面单位体积吸收的能量平均值.然后用最小二乘法拟合得到能量平均值随光刻胶厚度变化的解析式并求能量平均值的导数.最后通过优化光刻胶膜层,使能量平均值的导数绝对值最小.按优化结果设计光刻胶膜层,利用商业光刻软件Prolith9.0得到成像线宽随光刻胶厚度的变化.结果表明,该方法能在30～40nm的光刻胶厚度范围,有效地减小由体效应引起的成像线宽的变化.     

激光直写光刻中线条轮廓的分析

考虑了光刻胶对光吸收作用,在已有描述胶层内光场分布模型的基础上,较为准确地推导出光刻胶层内不同深度位置的光场分布.使用迭代方法计算得到了胶层内曝光量空间分布曲线,分析了不同曝光量下胶层内的线条轮廓,为直写光刻中曝光量的选择提供了依据.实验结果分析与理论分析的结果一致.     

双尺度织构的激光光刻工艺

搭建了双光束激光干涉光刻系统和激光快速扫描系统。利用干涉光刻系统,实现了不同周期、不同深度、大面积的表面规则光栅织构的构筑。利用激光快速扫描器的二维扫描功能,通过控制激光功率和扫描速度,对曝光量和填充线条间距进行了优化。提出了两种双尺度复合织构的制备方法:一种是在激光快速扫描系统中对抗蚀剂表面分别进行x, y方向的扫描光刻,然后在干涉光刻系统中进行双光束干涉光刻;另一种是在激光干涉光刻系统中进行两次曝光,每次曝光的入射角不同。实验结果表明:这两种方法在制备双尺度复合织构方面具有快速、廉价、操作简易等优点。     

Research on the optical field distribution and micro-fabrication model in convex-surface laser lithography

A system of convex-surface laser lithography with diode laser is established in this paper. Based on this system, a mathematical model of optical field distribution and lithography on the photoresist layer of convex-surface substrate with diode laser is presented. According to the lithography system and model, some numerical simulations are carried out. The simulation result shows that lithographic lines on convex-surface lithography are not symmetric about the optical axis of incident laser beam. Axis of lines at different vector radius on convex-surface substrate will offset from the wavefront normal of incident laser beam. The offset distance depends on the slopes of different equivalent slants. The simulative results of lithographic model agree well with the lithographic experimental data.     

The three-dimensional photonic crystals coated by gold nanoparticles

We report on the fabrication of metallodielectric photonic crystals by means of interference lithography and subsequent coating by gold nanoparticles. The grating is realized in a SU-8 photoresist using a He-Cd laser of wavelength 442 nm. The use of the wavelength found within the photoresist low absorption band enables fabricating structures that are uniform in depth. Parameters of the photoresist exposure and development for obtaining a porous structure corresponding to an orthorhombic lattice are determined. Coating of photonic crystals by gold nanoparticles is realized by reduction of chloroauric acid by a number of reductants in a water solution. This research shows that the combination of interference lithography and chemical coating by metal is attractive for the fabrication of metallodielectric three-dimensionally periodic microstructures.     

T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation

Femtosecond laser as a maskless lithography technique is able to fabricate structures far smaller than the diffraction limit to a value within sub-micrometer resolution. We present the femtosecond laser lithography without ablation on the positive photoresist is applied in fabricating T-shaped gate AlGaN/GaN HEMT. The feature sizes of femtosecond laser lithography were determined by the incident laser power, the scan speed of the laser focus, the number of scan times, and the substrate materials. T-shaped gate with the smallest gate length 204?nm could be fabricated by dielectric-defined process using femtosecond laser lithography. The fabricated AlGaN/GaN HEMT with 380?nm T-gate exhibits a maximum drain current density of 500?mA/mm and a maximum peak extrinsic transconductance of 173?mS/mm.     

355nm激光曝光SU-8胶的XPS谱和FT-IR谱研究

SU-8光胶因具有良好的光刻性能,并可获得稳定的高深宽比而在微加工领域得到了广泛的应用。众多研究采用不同的光源对其进行了多种光刻研究,本文应用355nm激光对SU-8胶进行曝光,分别采用XPS谱和FT-IR谱分析了SU-8胶与激光相互作用过程中,355nm激光对SU-8胶的作用以及反应前后主要成分含量、分子结构的变化,初步探讨了SU-8胶中激光曝光能量与透入深度的关系。     

Carbon nanotube growth on a pointed bulk electrode using femtosecond laser nonlinear lithography

Carbon nanotube (CNT) bundles were synthesized on pointed bulk electrodes using femtosecond laser nonlinear lithography. A resist mask of 1.5 μm diameter was formed on a pointed bulk cathode by translating a laser focus three-dimensionally inside the spherical photoresist. Metal masks obtained by pattern transfers of the resists effectively suppressed CNT growth during plasma-enhanced chemical vapor deposition, resulting in synthesis of CNT bundles only at the electrode tip. Irradiation of field emission currents from the pointed cathode enables local melting and subsequent removal of anode materials. The damaged region size and the threshold voltage for this removal process were reduced by spatial limitations of emission sites using the metal mask.     

High-power laser interference lithography process on photoresist: Effect of laser fluence and polarisation

High throughput and low cost fabrication techniques in the sub-micrometer scale are attractive for the industry. Laser interference lithography (LIL) is a promising technique that can produce one, two and three-dimensional periodical patterns over large areas. In this work, two- and four-beam laser interference lithography systems are implemented to produce respectively one- and two-dimensional periodical patterns. A high-power single pulse of ∼8 ns is used as exposure process. The optimum exposure dose for a good feature patterning in a 600 nm layer of AZ-1505 photoresist deposited on silicon wafers is studied. The best aspect ratio is found for a laser fluence of 20 mJ/cm². A method to control the width of the sub-micrometer structures based on controlling the resist thickness and the laser fluence is proposed.     

Three-dimensional woodpile photonic crystal templates for the infrared spectral range

High-quality templates of three-dimensional woodpile photonic crystals are fabricated in photoresist SU-8 by use of femtosecond laser lithography. The samples have smooth surfaces, are mechanically stable, and are resistant to degradation under environmental and chemical influences. Fundamental and higher-order photonic stopgaps are identified in the wavelength range 2.0-8.0 microm. These templates can be used for subsequent infiltration by optically active or high-refractive-index materials.