Influence of Dopant Concentration on Electroluminescent Performance of Organic White-Light-Emitting Device with Double-Emissive-Layered Structure

A novel phosphorescent organic white-light-emitting device （WOLED） with contiguration of ITO/NPB/CBP： TBPe：rubrene/Zn（BTZ）2：Ir（piq）2（acac）/Zn（BTZ）2/Mg：Ag is fabricated successfully, where the phosphorescent dye bis （1-（phenyl）isoquinoline） iridium （Ⅲ） acetylanetonate （Ir（piq）2 （acac）） doped into bis-（2-（2-hydroxyphenyl） benzothiazole）zinc （Zn（BTZ）2） （greenish-blue emitting material with electron transport character） as the red emitting layer, and fluorescent dye 2,5,8,11-tetra-tertbutylperylene （TBPe） and 5,6,11,12-tetraphenyl-naphthacene （rubrene） together doped into 4,4＇-N,N＇-dicarbazole-biphenyl （CBP） （ambipolar conductivity material） as the blue-orange emitting layer, respectively. The two emitting layers are sandwiched between the hole-transport layer N ,N＇-biphenyl-N , N＇-bis （1-naph thyl）-（1,1＇-biphenyl）-4, 4 Cdiamine （NP B） and electron-transport layer （Zn（BTZ）2 ） The optimum device turns on at the driving voltage of 4.5 V. A maximum external quantum efficiency of 1.53%. and brightness 15000 cd/m^2 are presented. The best point of the Commission Internationale de 1＇Eclairage （CIE） coordinates locates at （0.335, 0.338） at about 13 V. Moreover, we also discuss how to achieve the bright pure white light through optimizing the doping concentration of each dye from the viewpoint of energy transfer process.     

High-contrast and high-efficiency top-emitting organic light-emitting devices

The reflection properties of top-emitting organic light-emitting devices with different electrodes and organic layers were calculated. The results guided the fabrication of a high-contrast device: Au/copper phthalocyanine (CuPc: 35 nm)/N,N’-bis-(1-naphthyl)-N,N’diphenyl-1,1’ biphenyl-4,4’diamine (NPB: 15 nm)/tris(8-hydroxyquinoline) aluminum (Alq₃: 50 nm)/Sm (35 nm)/Alq₃ (65 nm). The device has a contrast ratio of 8.3:1 at a luminance of 300 cd/m² under 1000 lx ambient light, and a maximum luminance and efficiency of 5000 cd/m² and 4.14 cd/A, respectively. The high contrast is attributed to the moderate reflection of Au at 380–550 nm, low reflection of Sm in the visible range, and high absorption of CuPc at 600–700 nm. PACS 85.60.Jb; 78.20.Ci; 78.40.-q     

新型苯乙烯衍生物掺杂的蓝色及白色有机电致发光器件

研究了新型高效蓝色掺杂剂EBDP的电致发光性能. 分别以EBDP为掺杂剂制备了结构为氧化铟 锡(ITO)/酞菁铜(CuPc)/N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺(NPB)/2- 叔丁基-9,10-二-(2-萘基)蒽(TBADN):EBDP/8-羟基喹啉铝(Alq₃)/LiF/Al 与ITO /CuPc/NPB/TBADN:EBDP: 4-二氰亚甲基-2-叔丁基-6-(1,1,7,7-四甲基久咯呢定基-9-烯基)- 4H-吡喃/Alq_{3 关键词： 有机电致发光 蓝色掺杂剂 蓝色电致发光器件 白色电致发光器件}     

Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.     

Photovoltaic and Electroluminescence Bifunctional Devices with Starburst Amine and Rare-Earth-Complexes

We fabricate the organic photovoltaic （PV） devices, in which 4,4＇,4＂-tris-（2-methylphenylphenylamino）triphenylamine （m-MTDATA） and rare earth （RE） （dibenzoylmethanato）a（bathohenanthroline） （RE（DBM）abath） （RE = Nd or Pr） are used as electron donor and acceptor, and investigate their PV properties. The PV diode fabricated in the optimum processing conditions shows the open-circuit voltage of 1.91 V, short-circuit current of 0.1 mA/cm^2, fill factor of 0.38, and the overall power conversion efficiency of 1.9% when it is irradiated under UV light （4 m W/cm^2）. The photocurrent density exhibits an increase of 20% at least when a very thin LiF layer is inserted between the RE-complexes and the A1 cathode. A strong electroluminescence from the interface is also observed and the maximum luminance of a yellow emission resulted from the exciplex is 580 cd/m^2 at 17 V bias.     

Improved performance of organic light-emitting diodes with dual electron transporting layers

In this study the performance of organic light-emitting diodes(OLEDs) are enhanced significantly,which is based on dual electron transporting layers(Bphen/CuPc).By adjusting the thicknesses of Bphen and CuPc,the maximal luminescence,the maximal current efficiency,and the maximal power efficiency of the device reach 17570 cd/m2 at 11 V,and 5.39 cd/A and 3.39 lm/W at 3.37 mA/cm2 respectively,which are enhanced approximately by 33.4%,39.3%,and 68.9%,respectively,compared with those of the device using Bphen only for an electron transporting layer.These results may provide some valuable references for improving the electron injection and the transportation of OLED.     

Efficient Top-Emitting Polymer Light-Emitting Diodes Using Chromium as Anode

We demonstrate a high eftlciency top-emitting polymer light-emitting diode （TPLED） with chromium （Cr） taking as the anode. The TPLED structure is Cr/poly-3, 4-ethylenedioxythiophene （PEDOT：PSS）/poly [2-（4-3＇,7＇- dimethyloctyloxy）-phenyl]-p-phenylenevinylene） （P-PP V） /Ba/Ag. The Cr （ 100 nm） anode is prepared by sputterdepositing in a vacuum chamber. It is found that the device emissive properties are affected dramatically by the thickness of both PEDOT：PSS and the Ag cathode. Optimized thicknesses of PEDOT：PSS and Ag layer are 60nm and 15nm, respectively. The diode exhibits excellent electroluminescence （EL） properties, such as a turn-on voltage of 3.32 V, luminous eftlciency of 4.41 cd/A and luminance of 6989cd/m^2 at driving voltage of about 9 V.     

具有新型双空穴注入层的有机发光二极管

采用新型双空穴注入层N, N, N', N'-tetrakis(4-Methoxy-phenyl)benzidine/Copper phthalocyanine(MeO-TPD/CuPc)及器件结构:ITO/MeO-TPD(15 nm)/CuPc(15 nm)/ N, N'-Bis(naphthalen-1-yl)-N, N'-bis(phenyl)benzidine (NPB, 15 nm)/8-hydroxyquinoline (Alq₃, 50 nm)/LiF(1 nm)/Al(120 nm), 研制出高效有机发光二极管(器件D), 与其他器件(器件A, 没有空穴注入层的器件; 器件B, MeO-TPD单空穴注入层; 器件C, CuPc单空穴注入层)相比, 其性能得到明显改善. 器件D的起亮电压降至3.2 V, 比器件A, B, C的起亮电压分别降低了2, 0.3, 0.1 V. 器件D在10 V时, 其最大亮度为23893 cd/m², 最大功率效率为1.91 lm/W, 与器件A, B, C的最大功率效率相比, 分别提高了43% (1.34 lm/W), 22% (1.57 lm/W), 7% (1.79 lm/W). 性能改善的主要原因是由于空穴注入和传输性能得到了改善, 通过单空穴型器件的J-V 曲线对这一现象进行了分析. 关键词： 有机发光二极管 空穴注入层 功率效率 势垒     

4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺掺杂MoOx作为空穴传输层对有机太阳电池性能的影响

通过采用4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺 (m-MTDATA)掺入MoO_x作为器件的空穴传输层来提高酞菁铜(CuPc)/C₆₀小分子 有机太阳电池的效率. 采用真空蒸镀的方法制备了一系列器件, 其中结构为铟锡氧化物 (ITO)/m-MTDATA:MoO_x(3:1)(30 nm)/CuPc(20 nm)/C₆₀(40 nm)/4,7-二苯 基-1,10-菲罗啉 (Bphen)(8 nm)/LiF(0.8 nm)/Al(100 nm)的器件, 在AM1.5 (100 mW/cm²)模拟太阳光的照射条件下, 开路电压V_oc=0.40 V, 短路电流J_sc=6.59 mA/cm², 填充因子为0.55, 光电转换效率达1.46%, 比没有空穴传输层的器件ITO/CuPc(20 nm)/C₆₀(40 nm)/Bphen(8 nm)/LiF(0.8 nm)/Al(100 nm) 光电转换效率提高了38%. 研究表明, 加入m-MTDATA:MoO_x(3:1)(30 nm)空穴传输层减小了有机层和ITO电极之间的接触电阻, 从而减小了整个器件的串联电阻, 提高了器件的光电转换效率.     

Efficient white organic light-emitting devices using 4,7-diphenyl-1,10-phenanthroline as block layer

A white light-emitting device has been fabricated with a structure of ITO/m-MTDATA (45 nm)/NPB (10 nm)/DPVBi (8 nm)/DPVBi:DCJTB 0.5% (15 nm)/BPhen (x nm)/Alq₃ [(55−x) nm]/LiF (1 nm)/Al, with x=0, 4, and 7. BPhen was used as the hole-blocking layer. This results in a mixture of lights from DPVBi molecules (blue-light) and DCJTB (yellow-light) molecules, producing white light emission. The chromaticity can be readily adjusted by only varying the thickness of the BPhen layer. The CIE coordinates of the device are largely insensitive to the driving voltages. When the thickness of BPhen is 7 nm, the device exhibits peak efficiency of 6.87 cd/A (3.59 lm/W) at the applied voltage of 6 V, the maximum external quantum efficiency η_ext=2.07% corresponding to 6.18 cd/A, and the maximum brightness is 18494 cd/m² at 15 V.     

不同主体材料对红色磷光OLED器件性能的影响

制作了结构为ITO/2T-NATA (20 nm)/NPB(60 nm)/Zn(BTZ)₂ : Ir(DBQ)₂(acac) (80 nm)/Alq₃(70 nm)/LiF(1 nm)/Al(200 nm)的红光器件,其中2T-NATA是4,4',4″-tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine,NPB是N,N'-di(naphthalen-1-yl)-N,N'-diphenyl-benzidine, Zn(BTZ)₂是Bis-(2-(2-hydroxyphenyl) benzothiazole)zinc,Ir(DBQ)₂(acac)是iridium complex,Alq₃ 是tris(8-hydroxyquinolato)aluminum。基于Ir(DBQ)₂(acac) 掺杂的Zn(BTZ)₂体系的器件给出最高电致发光(EL)性能。结果显示:10％Ir(DBQ)₂-(acac) 掺杂Zn(BTZ)₂器件的亮度和效率分别为25 000 cd/m²和12 cd/A,其相应的EL峰位于620 nm,色坐标(x=0.63,y=0.37)。由于未使用激子阻挡层,所以,比通常磷光器件的制作工艺简单并且操作过程容易控制。     

High-contrast top-emitting organic light-emitting devices

In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni(30 nm)/MgF 2(62 nm)/ZnS(16 nm)/Ni(20 nm) and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A(at 62.3 mA/cm 2) together with a very stable chromaticity.The contrast ratio reaches 561:1 at an on-state brightness of 1000 cd/m 2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.     

基于铱配合物材料的高效高稳定性有机发光二极管

使用基于重金属Ir的新磷光材料(tpbi)₂Ir(acac)，制备了多层结构有机发光二极管器件: ITO/CuPc (40 nm)/α-NPD (45 nm)/CBP: (tpbi)₂Ir(acac) (3%, 30nm)/BCP(20 nm)/Alq₃ (20 nm)/LiF (1 nm)/Al (100 nm).测试了材料的寿命、光谱吸收性质和器件的I-V-L特性.器件在低电压下电流符合热发射注入模型，高电压下I-V呈线形关系.不同偏压下器件发光光谱稳定，多峰拟合结果表明器件光谱由α-NPD发光峰(450 nm)，(tpbi)₂Ir(acac)主发光峰(518 nm)和肩峰(543 nm)构成.驱动电压为6 V时，器件效率达到最大12.1 lm/W，此时亮度为136 cd/m²，器件亮度最大为13500 cd/m²，此时效率为0.584 lm/W. 关键词： 有机发光二极管 磷光 效率 I-V-L特性')" href="#">I-V-L特性 光谱     

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure

We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric mul- tilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous （ZrO2）0.5（SiO2）0.5 as the tunneling and blocking oxide layers, and ZrO2 nanocrystals as the trapping storage layer. Zr02 nanocrystals are precipitated from the phase separation of （ZrO2）0.5（SiO2）0.2 films annealed at 800℃, and isolated from each other within the amorphous （ZrO2）0.5（SiO2）0.5 matrix. Our charge trapping device shows a memory window of 2.6 V and a stored electron density of 1×10^13/cm2.     

Efficient Solution-Processed Blue Electrophosphorescent Devices Based on a Novel Small-Molecule Host

Efficient blue small molecular phosphorescent fight-emitting diodes with a blue phosphorescent dye bis（3,5- difluoro-2-（2-pyridyl）-phenyl-（2-carboxypride） iridium （Ⅲ） （Flrpic） doped into a novel small-molecule host 9,9- bis[4-（3,6-di-tert-butylcarbazol-9-yl）phenyl] fluorene （TBCPF） as the light-emitting layer have been fabricated by spin-coating. The host TBCPF can form homogeneous amorphous films by spin-coating and has triplet energy higher than that of the blue phosphorescent dye Flrpic. All the devices with different Flrpic concentration in the emitting layer give emission from Flrpic indicating complete energy transfer from TBCPF to Flrpic. The device shows the best performance with a peak brightness of 8050 cd/m^2 at 10.2 V and the maximum current efficiency up to 3.52 cd/A, when the Flrpic doped concentration is as high as 16%.     

利用C_(60)和CuPc形成的有机半导体异质结作为阳极修饰层实现高效的磷光有机发光二极管

利用C_(60)和Cu Pc形成有机半导体异质结作为阳极ITO修饰层,制备了高效绿色磷光有机发光二极管(OLEDs)。与常规MoO_3阳极修饰层相比,C_(60)(5 nm)/Cu Pc(25 nm)面异质结修饰器件的最大电流效率和外量子效率(EQE)提高了12%和11%,分别为60 cd/A和16.8%;而Cu Pc∶C_(60)(30 nm,50%)体异质结修饰器件则提高了26%和27%,分别为67 cd/A和19.3%。高的器件效率一方面归因于C_(60)与Cu Pc异质结界面处积累的电荷会在电压的作用下形成高效的电荷分离和空穴注入,另一方面归因于异质结具有吸收绿光光子形成光生载流子的光伏效应。利用Cu Pc∶C_(60)体异质结修饰阳极的器件由于具有更高效的电荷积累、更合适的空穴传输性、更平衡的载流子复合和更好的光伏特性,器件效率要比C_(60)/Cu Pc更优。研究表明,这种基于C_(60)与Cu Pc的有机半导体异质结可作为优越的ITO阳极修饰层。     

使用PTB7作为阳极修饰层提高有机发光二极管的性能

采用poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b’]dithiophene-2,6-diyl][3-?uoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]](PTB7)作为有机发光二极管器件的阳极修饰层,制备了结构为indium tin oxide(ITO)/PTB7(不同浓度)/N,N’-Bis(naphthalen-1-yl)-N,N’-bis(phenyl)benzidine(NPB,40 nm)/8-hydroxyquinoline(Alq3,60 nm)/LiF(1 nm)/Al的系列器件,同时研究了不同浓度的PTB7对器件性能的影响.PTB7的最佳浓度为0.25 mg/mL,器件性能得到明显的改善,起亮电压为4.3 V.当驱动电压为14.6 V时,最大亮度为45800 cd/m2,最大电流效率为9.1 cd/A.与没有PTB7修饰的器件相比,其起亮电压降低了1.9 V,最高亮度提升了78.5%.器件性能提高归因于PTB7的插入使得空穴注入和传输能力大大改善.     

Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

An a-SiNx/nanocrystalline silicon [（nc-Si）/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition （PECVD） system at low temperature （250℃）. The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2 ×10^11 cm^-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNs insulator layer are obtained. The density of interface state at the midgap is calculated to be 1 ×10^10 cm^-2eV^-1 from the quasistatic and high frequency C - V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage （C- V） measurement at room temperature. An ultra-large hysteresis is observed in the C - V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.     

高效率的有机电致发光器件

有机电致发光器件 (OL EDs)的发光机理包括电子和空穴从电极的注入、激子的形成及复合发光 ,其中 ,空穴和电子的注入平衡是非常重要的。为了平衡载流子的注入以得到高效率和稳定性好的器件 ,人们不仅使用了电子注入更为有效的 L i F/ Al[1] 和 Cs F/ Al[2 ] 等复合电极 ,同时也使用了空穴缓冲层 ,如 S.A.Van Slyke等 [3]在ITO和 NPB之间使用 Cu Pc,使得器件的稳定性得到了明显的提高 ;A.Gyoutoku等[4 ] 用碳膜使器件的半寿命超过 3 5 0 0小时 ;最近 ,Y.Kurosaka等 [5]和 Z.B.Deng[6 ]分别在 ITO和空穴传输层之间插入一薄层 Al…     

A comparative study of electrode effects on the electrical and luminescent characteristics of Alq3/TPD OLED: Improvements due to conductive polymer (PEDOT) anode

The performance of organic light emitting device (OLED) structures, based on identically fabricated Alq₃/TPD active regions, with various anode and cathode electrode structures are compared, and performance differences related to the different anode structure. The best performance was achieved with a conductive polymer, 3,4-polyethylenedioxythiopene-polystyrenesultonate (PEDOT), used as an anode layer, yielding a brightness of 1720 cd/m² at 25 V, a turn-on voltage of 3 V, and electroluminescence (EL) efficiency and external quantum efficiency of 8.2 cd/A and 2%, respectively, at a brightness of 100 cd/m² and 5 V. Compared to a baseline device (TPD/Alq₃/Al), PEDOT anodes substantially reduce the turn-on voltage and made current injection almost linear after turn-on, whiles devices incorporating a LiF and CuPc layers significantly improved device efficiency while slightly improving turn-on voltage and maintaining superlinear I-V injection. This is attributed to the reduced barrier at the organic-organic interface in PEDOT, the ‘ladder’ effect of stepping the band offset over several interfaces, and the favorable PEDOT film morphology. The benefit of the PEDOT anode is clearly seen in the improvement in device brightness and the high external quantum efficiency obtained.