极化子效应对核壳量子点中光学克尔效应的影响

在有效质量近似下利用量子力学的密度矩阵理论,采用无限深势阱模型解三维薛定谔方程得到电子的本征能量和波函数.从理论上计算了考虑极化子效应后,在导带子带间跃迁时ZnS/CdSe柱型核壳结构量子点光学克尔效应的三阶极化率.通过数值计算,分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe柱型核壳结构量子点光学克尔效应的三阶极化率的影响.结果表明:极化子效应对光学克尔效应的三阶极化率有很大影响,并且影响的大小与量子点的尺寸大小有关.     

极化子效应对核壳量子点中光学克尔效应的影响

在有效质量近似下利用量子力学的密度矩阵理论,采用无限深势阱模型解三维薛定谔方程得到电子的本征能量和波函数.从理论上计算了考虑极化子效应后,在导带子带间跃迁时ZnS/CdSe柱型核壳结构量子点光学克尔效应的三阶极化率.通过数值计算,分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe柱型核壳结构量子点光学克尔效应的三阶极化率的影响.结果表明：极化子效应对光学克尔效应的三阶极化率 有很大影响,并且影响的大小与量子点的尺寸大小有关.       

极化子效应对ZnS/CdSe柱型核壳量子点简并四波混频过程的影响

理论计算了带有极化子效应的ZnS/CdSe柱型核壳结构量子点简并四波混频的三阶极化率.在有效质量近似下,采用无限深势阱模型,导出了带有极化子效应的柱型量子点的三阶非线性光学极化率的解析表达式,解三维薛定谔方程得到电子的本征能量和波函数.分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe核壳结构量子点简并四波混频的三阶极化率的影响.结果表明,当量子点尺寸一定时,带有极化子效应的χ(3)DFWM比没有极化子时的三阶极化率提高了近3个数量级,并且电子-LO声子的影响比电子-IO声子的影响大得多;当固定核壳量子点的阱宽而内外半径发生变化时,χ(3)DFWM的峰值随之变化,而且极化子效应影响的大小也随之发生变化.     

极化子效应对ZnS/CdSe核壳量子点光吸收系数的影响

在有效质量近似下,利用量子力学密度矩阵理论,从理论上研究了考虑极化子效应后核壳量子点中线性、三阶非线性以及总的光吸收系数在不同条件下随入射光能量变化的关系。通过数值计算,分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe柱型核壳结构量子点光吸收系数的影响。结果表明,极化子效应对光吸收系数有很大影响,不同声子模式对光吸收系数影响大小不同。考虑电子-LO声子后,光吸收系数被大大提高。另外,入射光强和弛豫时间对系统的吸收系数也有很大影响。     

球形CdSe/ZnS核壳量子点的三阶极化率参量相关特征

在有效质量近似下,利用密度矩阵理论,采用无限深势阱模型,推导出了CdSe/ZnS核壳结构球形量子点的非线性光学中自聚焦效应的三阶极化率表达式。通过数值计算,分析了球形CdSe/ZnS核壳结构量子点的三阶极化率与量子点尺寸和入射光频率之间的关系。并对结果作出了必要的理论解释。     

极化子效应对ZnS/CdSe核壳量子点光吸收系数的影响（英文）

在有效质量近似下,利用量子力学密度矩阵理论,从理论上研究了考虑极化子效应后核壳量子点中线性、三阶非线性以及总的光吸收系数在不同条件下随入射光能量变化的关系。通过数值计算,分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe柱型核壳结构量子点光吸收系数的影响。结果表明,极化子效应对光吸收系数有很大影响,不同声子模式对光吸收系数影响大小不同。考虑电子-LO声子后,光吸收系数被大大提高。另外,入射光强和弛豫时间对系统的吸收系数也有很大影响。     

球形ZnS/CdSe/ZnS核壳壳量子点的三阶极化率参量相关特征

在有效质量近似下,利用量子力学的密度矩阵理论,采用无限深势阱模型导出了三层球型量子点的三阶非线性光学极化率(自聚焦)的解析表达式.通过数值计算,分析了ZnS/CdSe/ZnS球型核壳结构量子点的三阶极化率(自聚焦)与量子点尺寸和入射光频率之间的关系.结果显示,量子点尺寸增大时,自聚焦效应三阶极化率(自聚焦)的峰值高度增大,峰值位置红移.本文的讨论为实验研究和实际应用提供了理论依据,对于光电器件的研究和改进有参考价值.     

球形ZnS/CdSe/ZnS核壳壳量子点的三阶极化率参量相关特征

在有效质量近似下,利用量子力学的密度矩阵理论,采用无限深势阱模型导出了三层球型量子点的三阶非线性光学极化率(自聚焦)的解析表达式.通过数值计算,分析了ZnS/CdSe/ZnS球型核壳结构量子点的三阶极化率(自聚焦)与量子点尺寸和入射光频率之间的关系.结果显示,量子点尺寸增大时,自聚焦效应三阶极化率(自聚焦)的峰值高度增大,峰值位置红移.本文的讨论为实验研究和实际应用提供了理论依据,对于光电器件的研究和改进有参考价值.     

CdSe量子点的线性和非线性光学特性

主要从实验和理论两个方面,探讨了强受限尺寸区域内不同尺寸对CdSe量子点线性和非线性光学性质的影响.用吸收光谱研究了量子点尺寸与吸收峰之间的关系,用皮秒Z扫描技术研究了共振和非共振情况下(激发光波长分别为532和1064nm),尺寸与三阶非线性极化率之间的关系.基于电子能量状态理论和局域场增强理论对量子点进行分析,得到了CdSe不同尺寸的三阶非线性效应,研究了尺寸对量子点非线性光学性质的影响.结果表明,由激发态粒子数布局改变和纳米颗粒增大引起的非线性共振增强效应相当,二者共同作用使得三阶极化率增强20倍左右,且用532nm的共振频率激发4.3nm CdSe量子点时,χ⁽³⁾具有最大值2.0×10^-11esu. 关键词： CdSe量子点 三阶非线性 Z扫描')" href="#">Z扫描 量子限域效应     

二维量子点中极化子的自旋弛豫

在考虑Rashba自旋-轨道耦合的条件下, 采用二次幺正变换和变分方法研究了二维抛物量子点中由于电子与体纵光学声子的耦合作用形成的极化子在基态Zeeman分裂能级上的自旋弛豫过程.这一过程主要是通过吸收或发射一个形变势或压电声学声子完成.具体分析了强、弱耦合两种极限下极化子自旋弛豫率与外磁场、量子点半径、Landau因子参数、Rashba自旋轨道耦合参数的变化关系. 关键词： 自旋弛豫 极化子 Rashba自旋轨道耦合 量子点     

纤锌矿型量子级联激光器的界面与受限声子比较(英文)

利用传输矩阵方法对纤锌矿型量子级联激光器有源区的界面与受限声子进行了研究.计算结果显示:在纵光学频域有一组界面声子与二组受限声子存在,而且最低频率的两个界面声子在一定条件下能转变为受限模式.通过比较界面声子与受限声子的色散及声子势发现两者有很大不同,且计算电声散射速率可以发现由这两种声子引起的散射率是可比拟的.     

Polarons in a cylindrical quantum well wire with finite confining potential

The polaron self-energy and the correction to the electron effective mass in a cylindrical quantum well wire (QWW) are studied by the perturbation approach. The interactions of electrons with different phonon modes in the QWW system, including the confined longitudinal optical phonon modes, in the wire (LO1), in the barrier materials (LO2) and in the interface optical (IO) phonon modes, are considered. The result shows that the LO1 phonon’s contribution to the polaron self-energy increases gradually as the radius of the wire increases, and finally reaches that of the three-dimensional limit, while the LO2 phonon contributes only when the radius of the wire is very small. Also, the contribution of the IO phonon modes first increases quickly as the wire radius increases and soon reaches a maximum, then reduces to zero monotonically.     

Intersubband relaxation of hot carriers in quantum well systems

We use an ensemble Monte Carlo simulation of coupled electrons, holes and nonequilibrium polar optical phonons in multiple quantum well systems to model the intersubband relaxation of hot carriers measured in ultra-fast optical experiments. We have investigated the effect of various models of confined photon modes on the energy relaxation and intersubband transition rate in single quantum well and coupled well systems. In particular, the symmetry of the atomic displacement with respect to the quantum well has a marked effect on the relative intersubband versus intrasubband scattering rates, depending on whether one considers electrostatic boundary conditions(slab modes) or mechanical boundary conditions(guided modes). In single quantum wells systems, the overall intersubband relaxation time is not found to be strongly dependent on the confined mode model used due to competing effects of hot phonons and the relative intrasubband scattering rates. For coupled well systems, the relaxation rate is much more dependent on the exact nature of the phonon amplitude. Large effects are found associated with localized AlAs interface modes which dominate the intersubband relaxation time.     

CdS0.1Se0.9纳米晶体共振电光效应

采用电吸收谱(EA)的方法研究了在电场作用下,CdS_0.1Se_0.9纳米晶体光学性质的变化.分析了电场效应的物理机制,电场效应是使纳米晶体的吸收谱展宽和移动.第一激发态对外加电场敏感,而其它激发态不敏感.从电吸收谱上得到电光响应信号幅度与外加电场场强的平方成正比,表明纳米晶体的电光效应是 Kerr效应,具有三阶非线性极化率 χ⁽³⁾.     

Polaron self-energy and effective mass in a freestanding cylindrical quantum wire

The polaron self-energy and correction to the electron effective mass in a freestanding quantum wire is investigated by the perturbation approach.The polaron effect of the electron-confined longitudinal optical (LO) phonon and surface optical (SO) phonon interactions are separately worked out. Numerical calculation on a GaAs quantum wire shows that the confined LO phonon contribution to the polaron self-energy is relatively small for a narrow wire and gradually approach that of the bulk material when the radius of the wire increases. While the contribution of the SO phonon modes is big for small wire radius and then decreases as the radius increases.     

Pressure effect on the electron mobility in AlAs/GaAs quantum wells

By taking the influence of optical phonon modes into account, this paper adopts the dielectric continuum phonon model and force balance equation to investigate the electronic mobility parallel to the interfaces for AlAs/GaAs semiconductor quantum wells (QWs) under hydrostatic pressure. The scattering from confined phonon modes, interface phonon modes and half-space phonon modes are analysed and the dominant scattering mechanisms in wide and narrow QWs are presented. The temperature dependence of the electronic mobility is also studied in the temperature range of optical phonon scattering being available. It is shown that the electronic mobility reduces obviously as pressure increases from 0 to 4GPa, the confined longitudinal optical (LO) phonon modes play an important role in wide QWs, whereas the interface optical phonon modes are dominant in narrow QWs, the half-space LO phonon modes hardly influence the electronic mobility expect for very narrow QWs.     

Effect of electron-optical phonon interaction on resonant tunneling in coupled quantum wells

The spatial distribution of the wave functions for electrons in a coupled-quantum-well system of GaAs/Al _x Ga_1?x As with triple barriers is discussed. Within the framework of the dielectric continuum model, the dispersion relations of interface optical phonon modes are given. Furthermore, the interaction between an electron and optical phonons and the ternary mixed crystal effect in these structures are investigated in detail. The optical phonon-assisted tunneling (PAT) is studied using the Fermi golden rule to obtain numerically the PAT currents. The results reveal that the interface optical phonons are more important than the confined longitudinal optical phonons. Only one PAT peak does appear when the middle barrier is wide enough or its Al component is high enough, and the peak moves to the higher applied voltage direction, whereas two PAT peaks do appear when the middle barrier is narrow enough or its Al component is low enough.     

量子点中磁激子的极化子效应

采用推广的LLP方法研究了自组织量子点中磁激子的极化子效应。考虑带电粒子和声子的相互作用,得到了激子能量随磁场的变化关系。结果表明,激子-声子的相互作用降低了激子的能量,但影响很小;极化子效应在没有外磁场时较明显,随着外磁场的增加,这种效应变得越来越弱。