Pressure effect on the electron mobility in AlAs/GaAs quantum wells |
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Authors: | Hao Guo-Dong Ban Shi-Liang and Jia Xiu-Min |
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Institution: | Department of Physics, College of Sciences and Technology, Inner Mongolia University, Hohhot 010021, China |
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Abstract: | By taking the influence of optical phonon modes into account, this paper
adopts the dielectric continuum phonon model and force balance equation
to investigate the electronic mobility parallel to the interfaces for
AlAs/GaAs semiconductor quantum wells (QWs) under hydrostatic
pressure.
The scattering
from confined phonon modes, interface phonon modes and half-space
phonon modes are analysed and the dominant scattering mechanisms in
wide and narrow QWs are presented. The temperature dependence of the
electronic mobility is also studied in the temperature range of
optical phonon scattering being available. It is shown that the
electronic mobility reduces obviously as pressure increases from 0 to
4GPa, the confined longitudinal optical (LO) phonon modes play an
important role in wide QWs, whereas the interface optical
phonon modes are dominant in
narrow QWs, the half-space LO phonon modes hardly influence the electronic
mobility expect for very narrow QWs. |
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Keywords: | electronic mobility pressure effect quantum well |
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