极化子效应对ZnS/CdSe核壳量子点光吸收系数的影响（英文）

在有效质量近似下,利用量子力学密度矩阵理论,从理论上研究了考虑极化子效应后核壳量子点中线性、三阶非线性以及总的光吸收系数在不同条件下随入射光能量变化的关系。通过数值计算,分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe柱型核壳结构量子点光吸收系数的影响。结果表明,极化子效应对光吸收系数有很大影响,不同声子模式对光吸收系数影响大小不同。考虑电子-LO声子后,光吸收系数被大大提高。另外,入射光强和弛豫时间对系统的吸收系数也有很大影响。     

极化子效应对核壳量子点中光学克尔效应的影响

在有效质量近似下利用量子力学的密度矩阵理论,采用无限深势阱模型解三维薛定谔方程得到电子的本征能量和波函数.从理论上计算了考虑极化子效应后,在导带子带间跃迁时ZnS/CdSe柱型核壳结构量子点光学克尔效应的三阶极化率.通过数值计算,分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe柱型核壳结构量子点光学克尔效应的三阶极化率的影响.结果表明：极化子效应对光学克尔效应的三阶极化率 有很大影响,并且影响的大小与量子点的尺寸大小有关.       

极化子效应对核壳量子点中光学克尔效应的影响

在有效质量近似下利用量子力学的密度矩阵理论,采用无限深势阱模型解三维薛定谔方程得到电子的本征能量和波函数.从理论上计算了考虑极化子效应后,在导带子带间跃迁时ZnS/CdSe柱型核壳结构量子点光学克尔效应的三阶极化率.通过数值计算,分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe柱型核壳结构量子点光学克尔效应的三阶极化率的影响.结果表明:极化子效应对光学克尔效应的三阶极化率有很大影响,并且影响的大小与量子点的尺寸大小有关.     

极化子效应对ZnS/CdSe量子点三阶极化率的影响

在有效质量近似下,利用量子力学的密度矩阵理论,采用无限深势阱模型,从理论上计算了考虑极化子效应后在导带子带间跃迁时ZnS/CdSe柱型核壳结构量子点二次电光效应(QEOE)和电吸收过程(EA)的三阶极化率。通过数值计算,分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe柱型核壳结构量子点二次电光效应和电吸收过程的三阶极化率的影响。结果表明,极化子效应对二次电光效应的三阶极化率χ⁽³⁾_QEDE和电吸收过程的三阶极化率χ⁽³⁾_EA都有很大影响,并且影响的大小与量子点的尺寸大小有关。     

极化子效应对ZnS/CdSe柱型核壳量子点简并四波混频过程的影响

理论计算了带有极化子效应的ZnS/CdSe柱型核壳结构量子点简并四波混频的三阶极化率.在有效质量近似下,采用无限深势阱模型,导出了带有极化子效应的柱型量子点的三阶非线性光学极化率的解析表达式,解三维薛定谔方程得到电子的本征能量和波函数.分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe核壳结构量子点简并四波混频的三阶极化率的影响.结果表明,当量子点尺寸一定时,带有极化子效应的χ(3)DFWM比没有极化子时的三阶极化率提高了近3个数量级,并且电子-LO声子的影响比电子-IO声子的影响大得多;当固定核壳量子点的阱宽而内外半径发生变化时,χ(3)DFWM的峰值随之变化,而且极化子效应影响的大小也随之发生变化.     

极化子效应对量子盘中线性和非线性光吸收系数的影响

利用密度矩阵的方法,得出了考虑极化子效应的量子盘的线性和非线性光吸收系数的解析表达式,并以GaAs为例讨论了光吸收系数与不同的入射光子能量和量子盘的厚度之间的关系.结果表明,极化子效应对吸收系数有相当的影响 关键词： 量子盘 光学吸收系数 极化子效应     

电子-声子相互作用对正切平方量子阱中光吸收系数的影响

从理论上研究了电子-声子相互作用对正切平方量子阱中光吸收系数的影响,首先利用微扰论方法求出考虑极化子效应时正切平方量子阱的波函数和能级,然后利用密度矩阵算符理论和迭代法得到光吸收系数的解析表达式,最后以典型的GaAs/AlGaAs正切平方量子阱为例进行数值计算。结果表明,极化子效应对线性吸收系数、三阶非线性吸收系数和总吸收系数都有显著的影响,在相同光强的情况下极化子效应使光饱和吸收现象更加明显;考虑电声相互作用后,总吸收系数的改变量随着势阱宽度b的减小和势阱深度V0的增加而增大。     

ZnS/CdSe量子点中线性和三阶非线性光吸收系数研究

在有效质量近似下,利用量子力学的密度矩阵理论,采用无限深势阱模型,从理论上研究了ZnS/CdSe柱型核壳结构量子点中线性和三阶非线性光吸收系数。导出了柱型量子点中线性和三阶非线性光学吸收系数的解析表达式,分析了该系统在不同条件下线性和三阶非线性光吸收系数与入射光频率之间的关系。改变系统的参数,该系统的光吸收系数呈规律性变化。计算结果表明:弛豫时间τ、入射光强I和壳半径R2对系统的吸收系数α有很大的影响,从而为实验上研究核壳结构量子点的非线性光学效应提供了必要的理论依据。     

极化子效应对非对称量子阱中光吸收系数的影响(英文)

从理论上研究子电子-声子相互作用对Morse量子阱中光吸收系数的影响,首先利用微扰论方法求出考虑极化子效应时的电子波函数和能级,然后利用密度矩阵和迭代法得到光吸收系数的解析表达式,最后以典型的GaAs/AlGaAs Morse量子阱为例进行数值计算。结果表明,极化子效应使光吸收系数比仅考虑电子的情况增大了,并且在相同光强的情况下吸收饱和现象更明显;极化子效应的影响随着阱的非对称性的增强而增大;电声相互作用对电子能级的修正导致光吸收系数峰值向高能方向偏移。     

球形壳核量子点中杂质能谱及其非线性光学吸收性质的研究

量子点是一种新型的低维半导体材料,其非线性光学效应是人们关注的重点。本文主要针对球形壳核量子点中的非线性光学吸收特性展开讨论,拟运用了有限差分方法求解球形壳核量子点中杂质态的能级与束缚能。进一步采用密度矩阵法和迭代法获得系统光吸收系数表达式,分析形壳核量子点中的非线性光吸收系数影响因素。研究结果表明:球形壳核量子点中电子的9个低能级都会随着量子点半径R的增大而降低。在考虑加入杂质时,能级会降落得更快,并且引起能级排序之间的变化,从而导致束缚能级排序的变化。对于固定的径向量子数而言,我们发现相邻能级之间的能级间隔会增加,这导致了吸收峰谱线发生蓝移。此外,总的光吸收系数的强度随入射光强度的变化明显发生改变。当入射光强度增大时,不管是否考虑杂质,总的吸收系数在急剧地减少。当入射光强度达到一定值时,吸收峰达到饱和。当入射光强度超过这个临界值,吸收谱线会被分裂成两个吸收峰。     

Calculation of linear and nonlinear optical absorption coefficients of a spherical quantum dot with parabolic potential

In the effective mass approximation, we calculated the binding energy and wave function for the 1s-, 1p-, 1d- and 1f-states of a spherical quantum dot (QD) with parabolic potential by using a combination of quantum genetic algorithm (QGA) and Hartree-Fock-Roothaan (HFR) method. In addition, we also investigated the linear and the third-order nonlinear optical absorption coefficients as a function of the incident photon energy for the 1s-1p, 1p-1d and 1d-1f transitions. Our results are shown that the existence of impurity has great influence on optical absorption coefficients. Moreover, the optical absorption coefficients are strongly affected by the incident optical intensity, relaxation time, parabolic potential and dot radius.     

Intersublevel transitions in self-assembled quantum dots

Intersublevel transitions in semiconductor quantum dots are transitions of a charge carrier between quantum dot confined states. In InAs/GaAs self-assembled quantum dots, optically active intersublevel transitions occur in the mid-infrared spectral range. These transitions can provide a new insight on the physics of semiconductor quantum dots and offer new opportunities to develop mid-infrared devices. A key feature characterizing intersublevel transitions is the coupling of the confined carriers to phonons. We show that the effect of the strong coupling regime for the electron–optical phonon interaction and the formation of mixed electron–phonon quasi-particles called polarons drastically affect and control the dynamical properties of quantum dots. The engineering of quantum dot relaxation rates through phonon coupling opens the route to the realization of new devices like mid-infrared polaron lasers. We finally show that the measurement of intersublevel absorption is not limited to quantum dot ensembles and that the intersublevel ultrasmall absorption of a single quantum dot can be measured with a nanometer scale resolution by using phonon emission as a signature of the absorption. To cite this article: P. Boucaud et al., C. R. Physique 9 (2008).     

Exciton-phonon interaction in cylindrical semiconductor quantum dots

The exciton-longitudinal optical phonon interaction is theoretically investigated for the case of polar semiconductor cylindrical quantum dots embedded in semiconductor matrix. The theory is developed within the dielectric continuum model considering the Fröhlich interaction between electrons and confined bulk longitudinal optical phonons for a configurational interaction model of quantum dot. Representative longitudinal optical phonon mode for the exciton-phonon interaction is predicted for cylindrical InAs/GaAs quantum dots.     

Intersubband relaxation of hot carriers in quantum well systems

We use an ensemble Monte Carlo simulation of coupled electrons, holes and nonequilibrium polar optical phonons in multiple quantum well systems to model the intersubband relaxation of hot carriers measured in ultra-fast optical experiments. We have investigated the effect of various models of confined photon modes on the energy relaxation and intersubband transition rate in single quantum well and coupled well systems. In particular, the symmetry of the atomic displacement with respect to the quantum well has a marked effect on the relative intersubband versus intrasubband scattering rates, depending on whether one considers electrostatic boundary conditions(slab modes) or mechanical boundary conditions(guided modes). In single quantum wells systems, the overall intersubband relaxation time is not found to be strongly dependent on the confined mode model used due to competing effects of hot phonons and the relative intrasubband scattering rates. For coupled well systems, the relaxation rate is much more dependent on the exact nature of the phonon amplitude. Large effects are found associated with localized AlAs interface modes which dominate the intersubband relaxation time.     

Optical properties of a hydrogenic impurity in a confined Zn1−xCdxSe/ZnSe spherical quantum dot

The effect of longitudinal optical phonon field on the ground state and low lying-excited state energies of a hydrogenic impurity in a Zn_1−xCd_xSe/ZnSe strained quantum dot is investigated for various Cd content using the Aldrich-Bajaj effective potential. We consider the strain effect considering the internal electric field induced by the spontaneous and piezoelectric polarizations. Calculations have been performed using Bessel function as an orthonormal basis for different confinement potentials of barrier height. Polaron induced photoionization cross section of the hydrogenic impurity in the quantum dot is investigated. We study the oscillator strengths, the linear and third-order nonlinear optical absorption coefficients as a function of incident photon energy for 1s-1p and 1p-1d transitions with and without the polaronic effect. It is observed that the potential taking into account the effects of phonon makes the binding energies more than the obtained results using a Coulomb potential screened by a static dielectric constant and the optical properties of hydrogenic impurity in a quantum dot are strongly affected by the confining potential and the radii. It is also observed that the magnitude of the absorption coefficients increases for the transitions between higher levels with the inclusion of phonon effect.     

Dipole-allowed optical absorption in a parabolic quantum dot with two electrons

Dipole-allowed optical absorption in a parabolic quantum dot with two electrons are studied by using the exact diagonalization techniques and the compact density-matrix approach. Numerical results are presented for typical GaAs parabolic quantum dots. The results show that the total optical absorption coefficient of two electrons in quantum dot is about five times smaller than that of one electron in quantum dot.     

Theoretical investigation of hot electron cooling process in GaAs/AlAs cylindrical quantum wire under the influence of an intense electromagnetic wave

Hot electrons cooling by phonons in GaAs/AlAs cylindrical quantum wire (CQW), under the influence of an intense electromagnetic wave (EMW), is studied theoretically. Analytic expression for the electron cooling power (CP) is derived from the quantum transport equation for phonons, using the Hamiltonian of interacting electron–optical phonon system. Both photon absorption and emission processes are considered. Numerical results show that the CP reaches maximum when the energy difference between electronic subbands equals the energy of an optical phonon plus the photon energy. Under the influence of the EMW, the negative CP is observed showing that electrons gain energy from phonon and photon instead of losing their energy. Also, the CP increases with increasing the EMW amplitude. Our results theoretically clarify the mechanism of the electron cooling process by phonons in the GaAs/AlAs CQW under the EMW, which is of significance for designing and fabricating high-speed nanoelectronic devices based on this material.