Luminescence Spectra of YGG：RE^3＋, Bi^3＋ （RE = Eu and Tb） and Energy Transfer from Bi^3＋ to RE^3＋

We investigate the luminescence properties of Bi^3＋ and RE^3＋ （RE = Tb or Eu） in a Y3Ga5O12 （YGG） host system. The additional doping of Bi^3＋ can enhance the luminescence of Th^3＋ or Eu^3＋ in this host. Energy transfer from Bi^3＋ to Tb^3＋ and Eu^3＋ is observed and the mechanism of energy transfer is investigated. Mechanism of energy transfer can be explained as electric multipole interaction since the Bi^3＋ emission band and Tb^3＋ or Eu^3＋ excitation band overlaps and the Bi^3＋ emission intensity decreases while the intensity of Tb^3＋ or Eu^3＋ increases with the increase of Tb^3＋ or Eu^3＋ concentration. Therefore, Bi^3＋ ion is a kind of efficient sensitizer to the Tb^3＋ and Eu^3＋ activators in the Y3Ga5O12 host.     

Abnormal Visible Luminescence Mechanism of Tb^3＋-Yb^3＋ Codoped SiOu-Al2O3-CaF2 Glass Studied by Time-Resolved Spectra

The upconversion energy transfer mechanism in Tb^3＋-Yb^3＋ co-doped SiO2-Al2O3-CaF2 glass is investigated by time-resolved spectra. The effect of donor ion Yb^3＋ is involved in the dynamic decay behavior of acceptor ion Tb^3＋, which provides direct proof for the energy transfer from Yb^3＋ to Tb^3＋. The pump power dependence curves show that the upconversion luminescence is a two-photon process. The measured decay curves of the 5D4 state （Tb^3＋） contain two parts： a slow decay process corresponding to its radiation, and a fast one with a decay parameter approximately twice the lifetime of the ^2F5/2 state （Yb^3＋ ）. The fast decay process is contradictory to the generally accepted cooperative sensitization upconversion rate equation model. Since the effect of the host environmental is excluded by comparative experiments, we believe that there should be another energy transfer mechanism in Tb^3＋-Yb^3＋ co-doped SiO2-Al2O3-CaF2 glass in addition to the cooperative sensitization process.     

Effects of charge compensation on red emission in CaYAl3OT7：Eu3＋ phosphor

Monovalent ions Li＋, Na＋, and K＋, as charge compensators, are introduced into CaYA1307： M （M = Eu3＋, Ce~＋） in this letter. Their crystal phases and photoluminescence properties of different alkali metal ions doped in CaYA1307 are investigated. In addition, the influence of charge compensation ion Li＋ which has a more obvious role in improving luminescence intensity on CaYA1307： Eu3＋ phosphor is intentionally discussed in detail and a possible mechanism of charge compensation is given. The enhancement of red emission centered at 618 nm belonging to Eu3＋ is achieved by adding alkali metal ion Li＋ under 393-nm excitation.     

Effect of Gd doping on the magnetism and work function of Fe1-xGdx/Fe（001）

The magnetism and work function Ф of Fe1-xGdx/Fe （001） films have been investigated using first-principles methods based on the density functional theory. The calculated results reveal that Gd doping on the Fe （001） surface would greatly affect the geometrical structure of the system. The restruction of the surface atoms leads to the transition of magnetic coupling between Gd and Fe atoms from ferromagnetic （FM） for 0.5 ≤x ≤ 0.75 to antiferromagnetic （AFM） for x = 1.0. For Fe1-xGdx/Fe （001） （x = 0.25, 0.5, 0.75, 1.0）, the charge transfer from Gd to Fe leads to a positive dipole formed on the surface, which is responsible for the decrease of the work function. Moreover, it is found that the magnetic moments of Fe and Gd on the surface layer can be strongly influenced by Gd doping. The changes of the work function and magnetism for Fe1-xGdx/Fe （001） can be explained by the electron transfer, the magnetic coupling interaction between Gd and Fe atoms, and the complex surface restruction. Our work strongly suggests that the doping of the metal with a low work function is a promising way for modulating the work function of the magnetic metal gate.     

Effects of Yb^3＋ in Er^3＋/Yb^3＋ Codoped Fluorophosphate Glasses

For the Er^3＋ /Yb^3＋ codoped fluorophosphate glasses, Judd-Ofelt theory is used to analyse the influence of YbF3 as not a sensitizer but an average component on the spectroscopic properties around 1530nm emission. The double roles of Yb^3＋, as a sensitizer and as an average component, are discussed. It is found that Yb^3＋ as an average component contributes to the increase of fluorescence lifetime, and Yb^3＋ as a sensitizer has the best sensitization when its concentration is 2.4 mol%.     

Luminescent Characteristics of LiSrBO3：Eu3＋ Phosphor for White Light Emitting Diode

LiSrBO3 ：Eu3＋ phosphor is synthesized by a high solid-state reaction method, and its luminescent characteristics are investigated. The emission and excitation spectra of LiSrBO3：Eu3＋ phosphors exhibit that the phosphors can be effectively excited by near ultraviolet （401 nm） and blue （471 nm） light, and emit 615nm red light. The effect of Eua＋ concentration on the emission spectrum of LiSrBO3：Eu3＋ phosphor is studied; the results show that the emission intensity increases with increasing Eu3＋ concentration, and then decreases because of concentration quenching. It reaches the maximum at 3mol%, and the concentration self-quenching mechanism is the dipoledipole interaction according to the Dexter theory. Under the conditions of charge compensation Li＋, Na＋ or K＋ incorporated in LiSrBO3, the luminescent intensities of LiSrBO3 ：Eua＋ phosphor are enhanced.     

Effects of Li＋ on photoluminescence of Sr3SiOs： Sm3＋ red phosphor

The structure and photoluminescence （PL） properties of Sr3 SiO5： Sm3＋ and Li＋-doped Sr3SiOs： Sm3＋ red-emitting phosphors were investigated. Samples were prepared by the high-temperature solid-state method. PL spectra show that the concentration quenching occurs when the Sm3＋ concentration is beyond 1.3 mol% in Sr3SiOs： Sm3＋ phosphor without doping Li＋ ions. The concentration-quenching mechanism can be explained by the electric dipole-dipole interaction of Sm3＋ ions. The incorporation of Li＋ ions into Sr3SiOs： Sm3＋ phosphors, as a charge compensator, improves the PL properties. The lithium ions also suppress the concentration quenching in Sm3＋ with concentration increased from 1.3 tool% to 1.7 tool%.     

Luminescence and Energy Transfer of Eu^2＋, Mn^2＋ in SrZnP2O7

The SrZnP2OT：Eu^2＋, Mn^2＋ phosphor is synthesized by high temperature solid state reaction. The luminescence properties and the energy transfer between Eu^2＋ and Mn^2＋ are investigated. The emission bands of this phosphor peaked at 42Ohm and 67Ohm are originated from the 5d → 4f transition of Eu^2＋ and from the 4T1 （4G） --〉 6A1 （6S） transit/on of Mn^2＋, respectively. With the increasing Mn^2＋ concentration, the intensity of fixed concentra- tion Eu^2＋ decreases and the intensity of Mn^2＋ also increases. It is suggested that there is an energy transfer from Eu^2＋ to Mn^2＋ in SrZnP2O7 host. According to Dexter＇s energy transfer formula of multipolar interaction, the energy transfer between Eu^2＋ and Mn^2＋ is due to the electric dipole-quadrupole interaction of the resonance transfer.     

Quantum State Transfer between Charge and Flux Qubits in Circuit-QED

We propose a scheme to implement quantum state transfer in a hybrid circuit quantum electrodynarnics （QED） system which consists of a superconducting charge qubit, a flux qubit, and a transmission line resonator （TLR）. It is shown that quantum state transfer between the charge qubit and the flux qubit can be realized by using the TLR as the data bus.     

Observation of Nano-Dots on HOPG Surface Induced by Highly Charged Arq+ Impact

Highly charged ions （HCIs） have huge potential energy due to their high charge state. When a HCI reaches a solid surface, its potential energy is released immediately on the surface to cause a nano-scale defect. Thus, HCIs are expected to be useful for solid-surface modifications on the nano-scale. We investigate the defects on a highly oriented pyrolytic graphite （HOPG） surface induced by slow highly charged Ar^q＋ ions with impact energy of 20-2000qeV with scanning probe microscopy （SPM）. In order to clarify the role of kinetic and potential energies in surface modification, the nano-defects are characterized in lateral size and height corresponding to the kinetic energy and charge state of the HCIs. Both the potential energy and kinetic energy of the ions may influence the size of nano-defect. Since potential energy increases dramatically with increasing charge state, the potential energy effect is expected to be much larger than the kinetic energy effect in the case of extremely high charge states. This implies that pure surface modification on the nano-scale could be carried out by slow highly charged ions. The mean size of nano-defect region could also be controlled by selecting the charge state and kinetic energy of HCI.     

Giant Magnetoresistance in La0.67Ca0.33MnO3/Alq3/Co Sandwiched-Structure Organic Spin Valves

La_0.67Ca_0.33MnO₃/Alq₃/Co sandwiched-structure organic spin valves are fabricated by vacuum thermal evaporation method. A giant magnetoresistance (GMR) of 14% is observed at low temperature 100K. At 30K, the magnetoresistance can increase to 50%. The large GMR of the device is attributed to the high spin polarization and low conductivity of the La_0.67Ca_0.33MnO₃ contact. The magnetoresistance ΔR/R and the coercive field of the Co electrode depend strongly on temperature. The large high-field magnetoresistance reported on La_0.67Sr_0.33MnO₃/Alq₃/Co organic spin valves [Nature 427 (2004) 821] is not observed in our La_0.67Ca_0.33MnO₃/Alq₂/Co organic spin valves.     

Fe3O4 Segregation and Transport Properties of La0.67Ca0.33MnO3

Effect of Fe3O4 segregation at grain boundaries on the electrical transport and magnetic properties of La0.67Ca0.33MnO3 is investigated. The experimental results show that the Fe3O4 segregation not only shifts the paramagnetic-ferromagnetic transition temperature of La0.6TCa0.33MnO3 to a lower temperature region but also induces a new transition in a lower temperature region. Meanwhile, the transition processes observed in both the resistivity and magnetization curves are obviously widened. Compared to pure La0.67Ca0.33MnO3, we assume that the Fe3O4 segregation level at the grain boundaries can modify the electrical transport and magnetic properties of La0.67Ca0.33MnO3.     

Structural and Optical Properties of Nanocrystal In2O3 Films by Thermal Oxidation of In2S3 Films

In₂S₃ nanocrystalline films are prepared on glass substrates by the spray pyrolysis technique using indium chloride and thiourea as precursors. The deposition is carried out at 350°C on glass substrates. The films are then annealed for two hour at 200, 400, 600, and 800°C in O₂ flow. This process allows the transformation of nanocrystal In₂O₃ films from In₂S₃ films and the reaction completes at 600°C. These results indicate that the In₂O₃ film prepared by this simple thermal oxidation method is a promising candidate for electro-optical and photovoltaic devices.     

Optical Waveguide Formed in RbTiOPO4 Crystal by 6.0 MeV O^3＋ Implantation

A planar optical waveguide was formed in RbTiOP04 crystal by 6.0-MeV oxygen ion implantation with the dose of 2 × 10^15 ions/cm2 at room temperature. Annealing at 200℃ for 30min in air is performed to improve the thermal stability of the waveguide. The dark modes of the waveguide are measured at wavelengths 633 and 1539 nm, respectively. The refractive index profiles in the guiding layer are reconstructed by using the reflectivity calculation method. TRIM＇98 code was carried out to simulate the damage profiles caused by the implantation process to obtain a better understanding of the waveguide formation.     

Field-Induced Domain Reorientation and Polarization Rotation of <110> Oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals

Polarization hysteresis loops, x-ray diffraction and temperature dependent dielectric constant under different electric fields for <110> oriented 0.7PMN-0.3PT crystals are measured. The field-induced phase transition and the process of depolarization are discussed. The results show that with the electric field E increasing, the single-crystal form changes from the relaxor state of rhombohedral to normal rhombohedral, then to a monoclinic state via polar-axis reorientation and polarization rotation. Orthorhombic phase may present when E≥10kV, but it is an unstable form after E removal. The depolarization process is not just the reversal of the polarization process. It is noticed that only the temperature-dependent dielectric behaviour is not enough to judge the processes of the E-field induced phase transition.     

Superconducting Transition Temperature and Metal--Semiconductor Transition Temperature in YBa2Cu4O8/La0.67Ca0.33MnO3/YBa2Cu4O8 Trilayer Films

YBa₂Cu₄O₈/La_0.67Ca_0.33MnO₃/YBa₂Cu₄O₈(YBCO/LCMO/YBCO) trilayer films were prepared by magnetron facing-target sputtering. For the first time, the oscillatory behaviour of superconducting transition temperature T_c,ON with the thickness of LCMO (d_L) has been observed. The strongest nonmonotonic information in the T_c,ON--d_L curves appears clearly when d_L is larger than the critical thickness d_L^CR. The metal--semiconductor transition temperature can only be detected at d_L>d_L^CR. The dependence on the ferromagnetic spacer layer in YBCO/LCMO/YBCO systems suggests strongly the interplay of ferromagnetic and superconducting couplings.     

Relaxor Behaviour and Ferroelectric Properties of （Li0.12Na0.88） （Nb0.9-xWa0.10Sbx）O3 Lead-Free Ceramics

New lead-free ceramics （Lio.12Na0.88） （Nbo.9-x Ta0.10 Sbx） 03 （0.01 × 0.06） are synthesized by solid-state reaction method. The dielectric, piezoelectric and ferroelectric properties of the ceramics are studied. The dielectric constant dependence with temperature and frequency of the ceramic specimen with x = 0.04 shows typical characteristics of relaxor ferroelectrics, and the Vogel-Fulcher relationship is fulfilled. The dielectric behaviour and its relation to the phase transition phenomena are discussed. The polarization hysteresis loops at room temperature are also measured.     

Compact, Low Threshold Nd^3＋：YVO4 Self-Raman Laser at 1178 nm

A compact low-threshold Raman laser at 1178 nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd^3＋ ：YVO4 self-Raman laser. The threshold is 370mW at a pulse repetition frequency of S kHz. The maximum Raman laser output is 182 m W with the pulse duration smaller than 20 ns at a pulse repetition frequency of 30kHz with 1.8 W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficiency is 13.5%.     

Diode End-Pumped Passively Q-Switched Nd^3＋：GdVO4 Self-Raman Laser at 1176 nm

A compact diode-end-pumped passively Q-switched Nd^3＋ ：GdVO4/C^r4＋ ：YAG self-Raman laser at 1176 nm is demonstrated. When the To = 80% Cr^4＋：YAG saturable absorber is inserted into the cavity, the maximum Rtaman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission （about 350- 400nm） can be observed in the Nd^3＋ ：GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd^3＋ ions.     

Analysis of （1, 2） （1, 3） and （2, 3） Bands in the c^3Ⅱu- b^3Ⅱg System of P2

We investigate the high resolution absorption spectroscopy of P2 radical, generated in ac glow discharge of PC13 buffered with helium, using optical heterodyne magnetic rotation enhanced concentration modulation spectroscopy in the visible region. The （1, 2）, （1, 3） and （2, 3） bands of c^3Ⅱu- b^3Ⅱg in the range 16620-17860cm^-1 are observed and their 3II2 3II2 subbands are rotationally analysed. A set of effective molecular constants for the Ω= 2 component of the states involved are determined.