基于Vernier效应的法布里-珀罗传感器增敏方法

设计了一种分离型光纤传感增敏结构,并联连接两个腔长相近的法布里-珀罗(F-P)腔。理论分析了此结构的增敏原理并制备了两组增敏结构。实验结果表明,增敏结构的压强灵敏度值由单F-P结构的4.85 nm/MPa提高到43.95 nm/MPa,温度灵敏度由单F-P腔的0.0675 nm/℃提高至0.40364 nm/℃,在相同温度下采用双腔结构可消除温度交叉敏感对测量结果的影响。此结构克服了集成式增敏结构的缺陷,在不影响原传感器结构的情况下提高了灵敏度,且可通过更换辅助腔来调节灵敏度,具有移植性好和交叉敏感小等优势。     

Effects of charge compensation on red emission in CaYAl3OT7：Eu3＋ phosphor

Monovalent ions Li＋, Na＋, and K＋, as charge compensators, are introduced into CaYA1307： M （M = Eu3＋, Ce~＋） in this letter. Their crystal phases and photoluminescence properties of different alkali metal ions doped in CaYA1307 are investigated. In addition, the influence of charge compensation ion Li＋ which has a more obvious role in improving luminescence intensity on CaYA1307： Eu3＋ phosphor is intentionally discussed in detail and a possible mechanism of charge compensation is given. The enhancement of red emission centered at 618 nm belonging to Eu3＋ is achieved by adding alkali metal ion Li＋ under 393-nm excitation.     

Emission enhancement in Er^3＋/Pr^3＋-codoped germanate glasses and their use as a 2.7-μm laser material

Emission enhancement at 2.7 μm is observed in Er^3＋/Pr^3＋--codoped germanate glasses when pumped by a 980-nm laser diode. Significant reductions in 1.5-μm emission and upeonversion intensity indicate efficient energy transfer between Er^3＋ and Pr^3＋; the energy transfer efficiency is as high as 77.4%. The mechanisms of energy transfer are discussed in detail. The calculated emission cross-section of Er^3＋/Pr^3＋- codoped germanate glass is 8.44× 10 ^-21 cm^2, which suggests that Er^3＋/Pr^3＋-codoped germanate glass can be used to achieve efficient 2.7-μm emission.     

Energy transfer mechanism in Er3＋ doped fluoride glass sensitized by Tm3＋ or no3＋ for 2.7-μm emission

Enhanced 2.7 μm emission is obtained in Er3＋/Tma＋ and Era＋/Ho3＋ codoped ZBYA glasses. Absorp- tion and emission spectra are tested to characterize the 2.7 μm emission properties of Era＋/Tm3＋ and Era＋/Ho3＋ doped ZBYA glasses and a reasonable energy transfer mechanism of 2.7 μm emission between Er3＋ and Tm3＋Ho3＋） ion is proposed. Codoping of Tm3＋ or Ho3＋ significantly reduces the lifetime of the Era＋： 4I13/2 level due to the energy transfer of Er3＋：4I13/2 →Tm3＋：3F4 or Er3＋：4I13/2 →Ho3＋： 5I7. Thus, the 2.7μm emission is strengthened and the 1,5μm emission is decreased accordingly especially in the Era＋/Tma＋ sample. The upconversion effects between the Er3＋/Tm3＋ and Er3＋/Ho3＋ doped ZBYA glasses are different attribute to the different energy transfer efficiencies. Both of the two codoped samples possess nearly equal large emission cross section （16.6 × 10 -21 cm-2） around 2.7 μm. The results indicate that this Er3＋/Tm3＋ or Er3＋/Ho3＋ doped ZBYA glass has potential applications in 2.7 μm laser.     

Performance Improvement of Organic Thin Film Transistors Based on Gate Insulator Polymethyl-Methacrylate-co-Glyciclyl-Methacrylate

Organic thin transistors （OTFTs） on indium tin oxide glass substrates are prepared with polymethyl-methacrylate-co-glyciclyl-methacrylate （PMMA-GMA） as the gate insulator layer and copper phthalocyanine as the organic semiconductor layer. By controlling the thickness, the average roughness of surface is reduced and the OTFT performance is improved with leak current decreasing to 10^-11 A and on/off ratio of 10^4. Under the condition of drain-source voltage -20 V, a threshold voltage of -3.5 V is obtained. The experimental results show that PMMA-GMA is a promising insulator material with a dielectric constant in a range of 3.9-5.0.