| Diode End-Pumped Passively Q-Switched Nd^3＋：GdVO4 Self-Raman Laser at 1176 nm |
| |
| 引用本文： | 王保山,彭继迎,苗杰光,李义民,郝二娟,张哲,高兰兰,檀慧明.Diode End-Pumped Passively Q-Switched Nd^3＋：GdVO4 Self-Raman Laser at 1176 nm[J].中国物理快报,2007,24(1):112-114. |
| |
| 作者姓名： | 王保山 彭继迎 苗杰光 李义民 郝二娟 张哲 高兰兰 檀慧明 |
| |
| 作者单位： | [1]Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 [2]Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
| |
| 摘 要： | A compact diode-end-pumped passively Q-switched Nd^3＋ ：GdVO4/C^r4＋ ：YAG self-Raman laser at 1176 nm is demonstrated. When the To = 80% Cr^4＋：YAG saturable absorber is inserted into the cavity, the maximum Rtaman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission （about 350- 400nm） can be observed in the Nd^3＋ ：GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd^3＋ ions.
|
| 关 键 词： | Q-交换 二极管 Nd^3+:GdVO4 物理学 |
| 修稿时间： | 2006-06-23 |
Diode End-Pumped Passively Q-Switched Nd3+:GdVO4 Self-Raman Laser at 1176nm |
| |
| WANG Bao-Shan,PENG Ji-Ying,MIAO Jie-Guang,LI Yi-Min,HAO Er-Juan,ZHNG Zhe,GAO Lan-Lan,TAN Hui-Ming.Diode End-Pumped Passively Q-Switched Nd3+:GdVO4 Self-Raman Laser at 1176nm[J].Chinese Physics Letters,2007,24(1):112-114. |
| |
| Authors: | WANG Bao-Shan PENG Ji-Ying MIAO Jie-Guang LI Yi-Min HAO Er-Juan ZHNG Zhe GAO Lan-Lan TAN Hui-Ming |
| |
| Institution: | Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
| |
| Abstract: | |
| |
| Keywords: | 42 55 Xi 42 60 Gd 42 55 Ye |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理快报》浏览原始摘要信息 |
| 点击此处可从《中国物理快报》下载免费的PDF全文 |
|
